The HP-802 Automatic Wafer Dicing Machine is a high-precision dual-axis CNC system designed for advanced semiconductor processing and precision material cutting. Engineered for stability, flexibility, and efficiency, this machine is capable of handling multi-wafer batch processing with consistent cutting quality, making it an ideal solution for both R&D environments and mass production lines.
With a maximum workpiece size of 300 mm × 300 mm, the HP-802 supports cutting of 8-inch wafers and below, including materials such as silicon, silicon carbide (SiC), sapphire, glass, and other brittle substrates. The system adopts a gantry-type structure, ensuring high rigidity and reduced vibration during operation, which is essential for achieving clean cuts and minimizing edge chipping.
Core Features and Benefits
Multi-Wafer Processing Efficiency
The HP-802 is specifically optimized for multi-piece processing, allowing users to load and process multiple wafers simultaneously. Through its intelligent control interface, operators can define flexible cutting sequences, significantly improving throughput and reducing cycle time.
High Power Spindle Options
The machine offers multiple spindle configurations to meet different material requirements:
- 1.8 kW / 2.2 kW high-speed spindle for general applications
- Optional 2.8 kW spindle for hard and thick materials such as SiC
With a speed range of up to 60,000 rpm, the spindle ensures precise and smooth cutting performance across various substrates.
High Precision Motion Control
Equipped with advanced motion control systems, the HP-802 delivers:
- X-axis resolution: 0.001 mm
- Y-axis resolution: 0.0001 mm
- Positioning accuracy: ±0.002 mm
These parameters ensure high repeatability and accuracy, meeting the stringent requirements of semiconductor manufacturing.
Gantry Structure for Stability
The robust gantry frame design enhances mechanical rigidity and reduces vibration, which is critical for maintaining cutting accuracy and prolonging tool life.
Optional Sub-CT Dressing Function
The optional Sub-CT blade dressing system continuously maintains blade sharpness during operation. This feature significantly improves cutting consistency and reduces downtime associated with manual blade maintenance.
Technical Specifications
| Item | Specification |
|---|---|
| Spindle Power | 1.8 kW / 2.2 kW / 2.8 kW (Optional) |
| Spindle Speed | 3000 – 60000 rpm |
| Workpiece Size | Round: Ø300 mm / Square: 300 × 300 mm |
| X-Axis Stroke | 300 mm |
| X-Axis Speed | 0.1 – 600 mm/s |
| X-Axis Resolution | 0.001 mm |
| Y-Axis Resolution | 0.0001 mm |
| Positioning Accuracy | ±0.002 mm |
| Z-Axis Repeatability | 0.001 mm |
| Max Blade Diameter | 58 mm / 120 mm |
| θ-Axis Rotation | 380° ±5° |
| Optical System | 1.5× / 0.8× (Optional) |
| Machine Size | 1085 × 1040 × 1805 mm |
| Weight | 1200 kg |
Working Principle
The HP-802 operates using a high-speed rotating diamond blade, combined with precision-controlled linear axes. During operation, the wafer is securely mounted on the worktable, and the blade performs programmed cutting paths with controlled depth and speed.
The integration of optical alignment systems ensures accurate positioning before cutting begins, while the motion control system maintains stable feed rates and cutting forces. This results in minimal chipping, smooth edges, and high yield rates, even for fragile and hard materials.
Applications
The HP-802 Automatic Wafer Dicing Machine is widely used in:
- Semiconductor wafer dicing (≤ 8 inch)
- SiC wafer processing
- Sapphire substrate cutting
- Glass and ceramic precision cutting
- MEMS and sensor device manufacturing
Its versatility makes it suitable for industries requiring high precision and repeatability, especially in advanced electronics and optical manufacturing.
Key Advantages
- High Efficiency
Multi-wafer processing capability significantly increases productivity - High Precision
Micron-level positioning ensures consistent cutting accuracy - High Stability
Gantry structure reduces vibration and improves reliability - Flexible Configuration
Multiple spindle and blade options for different materials - Reduced Operating Cost
Optional Sub-CT system extends blade life and reduces maintenance
FAQ
Q1: What is the maximum wafer size supported by the HP-802?
A: The machine supports wafers up to 300 mm (8-inch and below), including both round and square workpieces.
Q2: Can this machine cut hard materials like SiC or sapphire?
A: Yes. With the optional 2.8 kW high-power spindle, the HP-802 is capable of efficiently cutting hard and brittle materials such as SiC and sapphire.
Q3: Does the machine support automated batch processing?
A: Yes. The HP-802 is designed for multi-wafer batch processing, allowing flexible programming and significantly improving production efficiency.
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