Ti/Cu Metal-Coated Silicon Wafer is designed as a standard conductive and process-compatible substrate for advanced research and industrial applications. By combining silicon wafer technology with metal thin-film coating, it provides a stable platform for electrical, chemical, and microfabrication processes.
The structure of the Ti/Cu coating system ensures both mechanical reliability and functional conductivity. It is especially suitable for applications requiring reliable metal interfaces, uniform surface conductivity, and compatibility with standard semiconductor processing techniques.
The product supports customization in wafer size, substrate type, and film thickness, making it suitable for both small-scale research experiments and pilot production environments.
Fő jellemzők
- Strong adhesion performance
Titanium adhesion layer significantly improves bonding between copper film and silicon substrate, reducing peeling and delamination risks. - High electrical conductivity
Copper surface layer provides low-resistance and stable electrical performance for device testing and conductive applications. - Excellent film uniformity
Magnetron sputtering ensures uniform coating thickness and smooth surface morphology across the entire wafer. - Good process compatibility
Compatible with lithography, etching, electroplating, deposition, and standard semiconductor fabrication processes. - Flexible customization
Available in multiple wafer sizes, substrate types, and metal layer thickness combinations.
Typical Structure
Substrate + Titanium Adhesion Layer + Copper Conductive Layer
- Substrate: Silicon / Quartz / Glass (optional)
- Adhesion Layer: Titanium (Ti)
- Conductive Layer: Copper (Cu)
- Deposition Method: Magnetron sputtering
The Ti layer acts as an interface bonding layer between the substrate and copper film, ensuring structural stability. The Cu layer provides the functional conductive surface for electrical and process applications.
Műszaki adatok
| Tétel | Leírás |
|---|---|
| Wafer méret | 2″, 4″, 6″, 8″, custom sizes |
| Substrate Material | Silicon, Quartz, BF33 glass (optional) |
| Crystal Orientation | <100>, <111>, etc. |
| Ellenállás | Low / Medium / High (customizable) |
| Ti Thickness | 10–50 nm (typical range) |
| Cu Thickness | 50 nm – 1 µm (sputtered), thicker via electroplating |
| Coating Method | Magnetron sputtering |
| Coating Side | Single-side or double-side |
Gyártási folyamat
The Ti/Cu metal-coated wafer is produced using vacuum magnetron sputtering technology. First, a titanium layer is deposited on the cleaned silicon surface to improve adhesion. Then a copper layer is deposited on top of the titanium film to form a uniform conductive surface.
For applications requiring thicker copper films, the sputtered copper layer can be used as a seed layer for electroplating, allowing further metal growth to achieve micron-level thickness while maintaining strong adhesion.
This combination process ensures both high film quality and flexible functional expansion.
Alkalmazások
- Semiconductor device research and prototyping
- Ohmic contact and electrode fabrication
- MEMS microstructure seed layer development
- Electroplating base for RDL and thick copper structures
- Thin film and nanomaterial growth research
- Surface conductivity testing and material analysis
- SEM, AFM, and surface metrology sample preparation
- Bio-electrochemical sensors and microarray platforms
Advantages Compared to Single Metal Coating
Compared with direct copper coating on silicon, the Ti/Cu structure provides:
- Better adhesion stability under thermal and chemical stress
- Reduced risk of copper peeling or cracking
- Improved process yield in microfabrication steps
- More stable electrical performance over time
- Better compatibility with multi-step semiconductor processes
This makes it a more reliable solution for both research laboratories and industrial R&D environments.
GYIK
Q1: Why is titanium used under copper coating?
Titanium acts as an adhesion layer that improves bonding between copper and silicon substrates, preventing delamination during processing and use.
Q2: Can copper thickness be increased?
Yes. Sputtered copper can be used as a seed layer for electroplating to achieve thicker metal layers depending on application requirements.
Q3: Can both sides of the wafer be coated?
Yes. Single-side or double-side coating options are available upon request.
Q4: What substrate options are available?
Standard silicon is most common, but quartz and glass substrates are also available for special optical or chemical applications.



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