Ti/Cu Metal-Coated Silicon Wafer Titanium Copper Sputtered Wafer for MEMS Microelectronics Conductive Substrate

The Ti/Cu Metal-Coated Silicon Wafer is a high-quality functional wafer prepared by depositing a titanium adhesion layer and a copper conductive layer onto a silicon substrate using magnetron sputtering technology. The titanium layer improves film adhesion and stability, while the copper layer provides excellent electrical conductivity. This product is widely used in microelectronics, MEMS fabrication, laboratory research, and thin-film process development.

Ti/Cu Metal-Coated Silicon Wafer is designed as a standard conductive and process-compatible substrate for advanced research and industrial applications. By combining silicon wafer technology with metal thin-film coating, it provides a stable platform for electrical, chemical, and microfabrication processes.

The structure of the Ti/Cu coating system ensures both mechanical reliability and functional conductivity. It is especially suitable for applications requiring reliable metal interfaces, uniform surface conductivity, and compatibility with standard semiconductor processing techniques.

The product supports customization in wafer size, substrate type, and film thickness, making it suitable for both small-scale research experiments and pilot production environments.


Wesentliche Merkmale

  • Strong adhesion performance
    Titanium adhesion layer significantly improves bonding between copper film and silicon substrate, reducing peeling and delamination risks.
  • High electrical conductivity
    Copper surface layer provides low-resistance and stable electrical performance for device testing and conductive applications.
  • Excellent film uniformity
    Magnetron sputtering ensures uniform coating thickness and smooth surface morphology across the entire wafer.
  • Good process compatibility
    Compatible with lithography, etching, electroplating, deposition, and standard semiconductor fabrication processes.
  • Flexible customization
    Available in multiple wafer sizes, substrate types, and metal layer thickness combinations.

Typical Structure

Substrate + Titanium Adhesion Layer + Copper Conductive Layer

  • Substrate: Silicon / Quartz / Glass (optional)
  • Adhesion Layer: Titanium (Ti)
  • Conductive Layer: Copper (Cu)
  • Deposition Method: Magnetron sputtering

The Ti layer acts as an interface bonding layer between the substrate and copper film, ensuring structural stability. The Cu layer provides the functional conductive surface for electrical and process applications.


Spezifikationen

Artikel Beschreibung
Wafer Größe 2″, 4″, 6″, 8″, custom sizes
Substrate Material Silicon, Quartz, BF33 glass (optional)
Crystal Orientation <100>, <111>, etc.
Widerstandsfähigkeit Low / Medium / High (customizable)
Ti Thickness 10–50 nm (typical range)
Cu Thickness 50 nm – 1 µm (sputtered), thicker via electroplating
Coating Method Magnetron sputtering
Coating Side Single-side or double-side

Herstellungsprozess

The Ti/Cu metal-coated wafer is produced using vacuum magnetron sputtering technology. First, a titanium layer is deposited on the cleaned silicon surface to improve adhesion. Then a copper layer is deposited on top of the titanium film to form a uniform conductive surface.

For applications requiring thicker copper films, the sputtered copper layer can be used as a seed layer for electroplating, allowing further metal growth to achieve micron-level thickness while maintaining strong adhesion.

This combination process ensures both high film quality and flexible functional expansion.


Anwendungen

  • Semiconductor device research and prototyping
  • Ohmic contact and electrode fabrication
  • MEMS microstructure seed layer development
  • Electroplating base for RDL and thick copper structures
  • Thin film and nanomaterial growth research
  • Surface conductivity testing and material analysis
  • SEM, AFM, and surface metrology sample preparation
  • Bio-electrochemical sensors and microarray platforms

Advantages Compared to Single Metal Coating

Compared with direct copper coating on silicon, the Ti/Cu structure provides:

  • Better adhesion stability under thermal and chemical stress
  • Reduced risk of copper peeling or cracking
  • Improved process yield in microfabrication steps
  • More stable electrical performance over time
  • Better compatibility with multi-step semiconductor processes

This makes it a more reliable solution for both research laboratories and industrial R&D environments.


FAQ

Q1: Why is titanium used under copper coating?
Titanium acts as an adhesion layer that improves bonding between copper and silicon substrates, preventing delamination during processing and use.

Q2: Can copper thickness be increased?
Yes. Sputtered copper can be used as a seed layer for electroplating to achieve thicker metal layers depending on application requirements.

Q3: Can both sides of the wafer be coated?
Yes. Single-side or double-side coating options are available upon request.

Q4: What substrate options are available?
Standard silicon is most common, but quartz and glass substrates are also available for special optical or chemical applications.

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