Thin-Film Lithium Niobate on Insulator (LNOI) wafers are advanced photonic substrates used for integrated optical, microwave photonic, and quantum systems.
The structure consists of a single-crystal lithium niobate thin film bonded onto a SiO₂ insulating layer and supported by a silicon substrate.
This configuration provides strong optical confinement, ultra-low propagation loss, and high electro-optic efficiency, making it a key platform for integrated photonics.
What is Thin-Film Lithium Niobate (TFLN)
Thin-Film Lithium Niobate (TFLN) refers to a sub-micron crystalline LiNbO₃ layer engineered for optical waveguide and electro-optic applications.
Compared with bulk lithium niobate, TFLN enables tighter optical confinement, smaller device footprint, and higher integration density.
TFLN is typically implemented on LNOI wafers to form a complete integrated photonic platform.
Các tính năng chính
- Ultra-low optical loss < 0.05 dB/cm @ 1550 nm
- High electro-optic coefficient (r₃₃ up to 90 pm/V)
- Sub-micron waveguide compatibility (<1 μm)
- CMOS-compatible integration with Si / SiN platforms
- High thermal stability (~1140°C Curie temperature)
- Multiple crystal cuts: X-cut / Y-cut / Z-cut
- Wafer sizes: 3 inch / 4 inch / 6 inch / 8 inch
Wafer Structure
| Layer | Chất liệu | Function |
|---|---|---|
| Top Layer | LiNbO₃ Thin Film (TFLN) | Electro-optic & nonlinear optical functionality |
| Middle Layer | SiO₂ (Buried Oxide) | Optical isolation & confinement |
| Bottom Layer | Si / Quartz / Sapphire | Mechanical support & CMOS compatibility |
Thông số kỹ thuật
Wafer Specifications
| Tham số | Giá trị |
|---|---|
| Wafer Diameter | 3″, 4″, 6″, 8″ |
| Total Thickness | 525 ± 25 μm |
| Cung | ±50 μm |
| Warp | <50 μm |
| Tỷ lệ cho vay trên giá trị tài sản (LTV) | <1.5 μm (5×5 mm², 95%) |
Thin-Film Lithium Niobate Layer
| Tham số | Giá trị |
|---|---|
| Chất liệu | Single-crystal LiNbO₃ |
| Độ dày | 300 nm – 1000 nm |
| Orientation Accuracy | ±0.5° |
| Độ nhám bề mặt | Ra < 1 nm |
| Bonding Defects | No defects >1 mm |
Buried Oxide Layer (SiO₂)
| Tham số | Giá trị |
|---|---|
| Chất liệu | SiO₂ |
| Độ dày | 100 nm – 2 μm (customizable) |
| Tính đồng nhất | ±5% |
Fabrication Process
LNOI wafers are manufactured using semiconductor-grade processes:
- Ion implantation for controlled layer separation
- Wafer bonding onto insulating substrates
- High-temperature annealing for crystal stabilization
- Chemical Mechanical Polishing (CMP) for surface planarization
- Final optical and structural quality inspection
Key Applications
- High-speed optical communication (100G–800G modulators)
- Quantum photonics (entangled photon generation, QKD systems)
- Microwave photonics (RF signal processing, mmWave systems)
- Nonlinear optics (frequency conversion, optical combs)
- Integrated sensing systems (biochemical and optical resonators)
Performance Advantage vs Bulk LiNbO₃
| Bất động sản | Bulk LiNbO₃ | LNOI Thin Film |
|---|---|---|
| Optical Loss | Higher | <0.05 dB/cm |
| Integration | Thấp | High-density photonics |
| Device Size | Large | Sub-micron scale |
| CMOS Compatibility | No | Yes |
| Modulation Efficiency | Trung bình | High (Vπ ~1V achievable) |
Các tùy chọn tùy chỉnh
| Option | Mô tả |
|---|---|
| Crystal Cut | X-cut / Y-cut / Z-cut |
| Độ dày màng | 300 nm – 1000 nm |
| Substrate | Si / Quartz / Sapphire |
| Oxide Layer | 100 nm – 2 μm (custom) |
| Doping | MgO-doped LiNbO₃ available |
Kiểm soát chất lượng
| Test Item | Phương pháp |
|---|---|
| Optical Loss | Waveguide propagation test |
| Độ nhám bề mặt | AFM measurement |
| Độ đồng đều về độ dày | Mapping system |
| Bonding Quality | IR inspection |
| Độ phẳng | Wafer metrology |
Engineering Capability
ZMSH provides full-process support for LNOI wafer development:
- Thin-film design optimization
- Wafer bonding process engineering
- Photonic device fabrication support
- Nanofabrication (EBL / IBE)
- Optical performance testing and validation
Supports both R&D prototyping and scalable small-batch production up to 8-inch wafers.
Câu hỏi thường gặp
What is LNOI used for
LNOI wafers are widely used in optical communication, quantum photonics, nonlinear optics, and integrated photonic circuits.
What is the typical thin-film thickness
Typical lithium niobate thin-film thickness ranges from 300 nm to 1000 nm.
Why use LNOI instead of bulk lithium niobate
LNOI offers lower optical loss, higher integration density, and CMOS-compatible photonic integration.
Can LNOI integrate with silicon photonics
Yes, LNOI is fully compatible with silicon and silicon nitride photonic platforms.
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