Thin-Film Lithium Niobate on Insulator (LNOI) wafers are advanced photonic substrates used for integrated optical, microwave photonic, and quantum systems.
The structure consists of a single-crystal lithium niobate thin film bonded onto a SiO₂ insulating layer and supported by a silicon substrate.
This configuration provides strong optical confinement, ultra-low propagation loss, and high electro-optic efficiency, making it a key platform for integrated photonics.
What is Thin-Film Lithium Niobate (TFLN)
Thin-Film Lithium Niobate (TFLN) refers to a sub-micron crystalline LiNbO₃ layer engineered for optical waveguide and electro-optic applications.
Compared with bulk lithium niobate, TFLN enables tighter optical confinement, smaller device footprint, and higher integration density.
TFLN is typically implemented on LNOI wafers to form a complete integrated photonic platform.
주요 기능
- Ultra-low optical loss < 0.05 dB/cm @ 1550 nm
- High electro-optic coefficient (r₃₃ up to 90 pm/V)
- Sub-micron waveguide compatibility (<1 μm)
- CMOS-compatible integration with Si / SiN platforms
- High thermal stability (~1140°C Curie temperature)
- Multiple crystal cuts: X-cut / Y-cut / Z-cut
- Wafer sizes: 3 inch / 4 inch / 6 inch / 8 inch
Wafer Structure
| Layer | 재료 | Function |
|---|---|---|
| Top Layer | LiNbO₃ Thin Film (TFLN) | Electro-optic & nonlinear optical functionality |
| Middle Layer | SiO₂ (Buried Oxide) | Optical isolation & confinement |
| Bottom Layer | Si / Quartz / Sapphire | Mechanical support & CMOS compatibility |
기술 사양
Wafer Specifications
| 매개변수 | 가치 |
|---|---|
| Wafer Diameter | 3″, 4″, 6″, 8″ |
| Total Thickness | 525 ± 25 μm |
| 활 | ±50 μm |
| 워프 | <50 μm |
| LTV | <1.5 μm (5×5 mm², 95%) |
Thin-Film Lithium Niobate Layer
| 매개변수 | 가치 |
|---|---|
| 재료 | Single-crystal LiNbO₃ |
| 두께 | 300 nm – 1000 nm |
| Orientation Accuracy | ±0.5° |
| 표면 거칠기 | Ra < 1 nm |
| Bonding Defects | No defects >1 mm |
Buried Oxide Layer (SiO₂)
| 매개변수 | 가치 |
|---|---|
| 재료 | SiO₂ |
| 두께 | 100 nm – 2 μm (customizable) |
| 균일성 | ±5% |
Fabrication Process
LNOI wafers are manufactured using semiconductor-grade processes:
- Ion implantation for controlled layer separation
- Wafer bonding onto insulating substrates
- High-temperature annealing for crystal stabilization
- Chemical Mechanical Polishing (CMP) for surface planarization
- Final optical and structural quality inspection
Key Applications
- High-speed optical communication (100G–800G modulators)
- Quantum photonics (entangled photon generation, QKD systems)
- Microwave photonics (RF signal processing, mmWave systems)
- Nonlinear optics (frequency conversion, optical combs)
- Integrated sensing systems (biochemical and optical resonators)
Performance Advantage vs Bulk LiNbO₃
| 속성 | Bulk LiNbO₃ | LNOI Thin Film |
|---|---|---|
| Optical Loss | Higher | <0.05 dB/cm |
| Integration | 낮음 | High-density photonics |
| Device Size | Large | Sub-micron scale |
| CMOS Compatibility | No | Yes |
| Modulation Efficiency | 보통 | High (Vπ ~1V achievable) |
사용자 지정 옵션
| Option | 설명 |
|---|---|
| Crystal Cut | X-cut / Y-cut / Z-cut |
| 필름 두께 | 300 nm – 1000 nm |
| Substrate | Si / Quartz / Sapphire |
| Oxide Layer | 100 nm – 2 μm (custom) |
| Doping | MgO-doped LiNbO₃ available |
품질 관리
| Test Item | 방법 |
|---|---|
| Optical Loss | Waveguide propagation test |
| 표면 거칠기 | AFM measurement |
| 두께 균일성 | Mapping system |
| Bonding Quality | IR inspection |
| 평탄도 | Wafer metrology |
Engineering Capability
ZMSH provides full-process support for LNOI wafer development:
- Thin-film design optimization
- Wafer bonding process engineering
- Photonic device fabrication support
- Nanofabrication (EBL / IBE)
- Optical performance testing and validation
Supports both R&D prototyping and scalable small-batch production up to 8-inch wafers.
자주 묻는 질문
What is LNOI used for
LNOI wafers are widely used in optical communication, quantum photonics, nonlinear optics, and integrated photonic circuits.
What is the typical thin-film thickness
Typical lithium niobate thin-film thickness ranges from 300 nm to 1000 nm.
Why use LNOI instead of bulk lithium niobate
LNOI offers lower optical loss, higher integration density, and CMOS-compatible photonic integration.
Can LNOI integrate with silicon photonics
Yes, LNOI is fully compatible with silicon and silicon nitride photonic platforms.
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