Semi Automatic Room Temperature Wafer Bonding Machine for 2 to 12 Inch Wafer Processing

The Semi Automatic Room Temperature Wafer Bonding Machine is a high-precision system for wafer-level and chip-level bonding. By combining mechanical pressure with in situ surface activation technology, it enables permanent bonding at room temperature (20–30°C) without adhesives or high temperature processing.

The Semi Automatic Room Temperature Wafer Bonding Machine is a high-precision system for wafer-level and chip-level bonding. By combining mechanical pressure with in situ surface activation technology, it enables permanent bonding at room temperature (20–30°C) without adhesives or high temperature processing. This minimizes thermal stress and material deformation, making it ideal for heat-sensitive and heterogeneous materials. The machine supports wafer sizes from 2 inch to 12 inch and is suitable for research, pilot production, and small to medium scale manufacturing.

Key Features

  1. Room Temperature Bonding – Operates at 25 ± 5°C to prevent thermal mismatch and wafer warpage.
  2. Surface Activation – Plasma or chemical activation improves bonding strength; optional sputtering enhances interface quality.
  3. High Precision Alignment – Visual alignment system and precision motion platform with ±0.5 μm accuracy.
  4. Wide Material Compatibility – Supports Si, SiC, GaAs, GaN, InP, sapphire, glass, LiNbO₃, LiTaO₃, diamond, and selected polymers.
  5. Semi-Automatic Operation – Manual wafer loading with automated bonding process; programmable recipes for repeatable results.
  6. Clean and Stable Environment – Built-in Class 100 clean system ensures low contamination and interface void rate <0.1%.

Technical Specifications

Parameter Specification
Wafer Size 2″ – 12″, compatible with irregular samples
Bonding Temperature 20–30°C
Maximum Pressure 80 kN
Pressure Control 0–5000 N adjustable, ±1 N resolution
Alignment Accuracy ±0.5 μm
Bond Strength ≥2.0 J/m²
Surface Treatment In situ activation + sputtering deposition
Feeding Mode Manual
Cleanliness Level Class 100

Core Technology

  1. Room Temperature Direct Bonding – Activated surfaces contact under controlled pressure forming stable bonds without thermal annealing.
  2. Surface Activation – Increases surface energy, removes contaminants, and improves bonding uniformity across materials.

Applications

  1. Advanced Semiconductor Packaging – 3D IC stacking, TSV bonding, heterogeneous integration of logic and memory chips.
  2. MEMS Manufacturing – Wafer-level vacuum packaging for sensors such as accelerometers and gyroscopes.
  3. Optoelectronics and Displays – LED bonding, sapphire and glass substrate bonding, AR/VR optical module assembly.
  4. Microfluidics and Biochips – PDMS and glass bonding while preserving biological activity.
  5. Research and Emerging Devices – Flexible electronics, quantum devices, and heterogeneous material integration.

Service and Support

  1. Process Development – Bonding parameter optimization and surface activation solutions for different materials.
  2. Equipment Customization – High-precision alignment modules, vacuum or controlled atmosphere chambers.
  3. Technical Training – On-site operation guidance and process debugging.
  4. After-Sales Support – 12-month warranty, quick replacement of key components, remote diagnostics, and software updates.

FAQ

Q: What is the main advantage of room temperature bonding?
A: It eliminates thermal stress and enables reliable bonding of heat-sensitive and heterogeneous materials.

Q: What materials can be bonded?
A: Silicon, silicon carbide, gallium nitride, gallium arsenide, indium phosphide, sapphire, glass, lithium niobate, diamond, and selected polymers.

Reviews

There are no reviews yet.

Be the first to review “Semi Automatic Room Temperature Wafer Bonding Machine for 2 to 12 Inch Wafer Processing”

Your email address will not be published. Required fields are marked *