The Ai350HT (Medium Beam) high temperature ion implantation system is designed for 6-inch and 8-inch silicon wafer semiconductor manufacturing lines, as well as SiC process applications. It is a medium current ion implanter developed for high-energy and high-temperature doping processes in advanced semiconductor fabrication.
The system supports an energy range from 5 keV to 350 keV, enabling both shallow and deep implantation processes. It is equipped with a high temperature electrostatic chuck capable of operating up to 500°C, allowing improved dopant activation and reduced lattice damage during implantation. Combined with stable beam performance and high precision control, the system is suitable for both silicon-based and wide bandgap semiconductor manufacturing.
Features
High Temperature Implantation Capability
Equipped with a high temperature electrostatic chuck supporting up to 500°C, enabling improved implantation efficiency and dopant activation for advanced processes.
Wide Energy Range
Energy range of 5–350 keV supports flexible implantation requirements from shallow junction formation to deep implantation processes.
High Precision Beam Control
Provides accurate implantation performance with angle accuracy ≤ 0.2°, beam parallelism ≤ 0.2°, uniformity ≤ 0.5%, and repeatability ≤ 0.5%.
Stable Beam Performance
Beam stability is controlled within 10% per hour, ensuring consistent process quality during long production cycles.
Long-Life Ion Source
Equipped with a metal Al ion source with a service life of ≥150 hours, reducing maintenance frequency and improving uptime.
High Throughput Capability
Supports throughput of ≥ 200 wafers per hour, suitable for semiconductor production environments.
Advanced Process Compatibility
Compatible with SiC processes and conventional silicon-based semiconductor manufacturing.
主な仕様
Process Parameters
| 項目 | 仕様 |
|---|---|
| ウエハーサイズ | 6–8 inch |
| Energy Range | 5–350 keV |
| Implanted Elements | C, Al, B, P, N, He, Ar |
| Dose Range | 1E11–1E17 ions/cm² |
Beam Performance
| 項目 | 仕様 |
|---|---|
| Beam Stability | ≤ 10% / hour (≤1 beam interruption or arcing per hour) |
| Beam Parallelism | ≤ 0.2° |
Implantation Accuracy
| 項目 | 仕様 |
|---|---|
| Implant Angle Range | 0°–45° |
| Angle Accuracy | ≤ 0.2° |
| Uniformity (1σ) | ≤ 0.5% (P+, 1E14, 100 keV) |
| Repeatability (1σ) | ≤ 0.5% |
System Performance
| 項目 | 仕様 |
|---|---|
| スループット | ≥ 200 wafers per hour |
| Maximum Chuck Temperature | 500°C |
| Equipment Size | 6270 × 3500 × 3000 mm |
| 真空レベル | 5E-7 Torr |
| X-ray Leakage | ≤ 0.3 μSv/h |
| Scanning Mode | Horizontal electrostatic scanning + vertical mechanical scanning |
Application Fields
SiC Semiconductor Manufacturing
Used in silicon carbide device fabrication requiring high temperature ion implantation processes.
Silicon-Based Semiconductor Processing
Applicable to CMOS and integrated circuit manufacturing on 6-inch and 8-inch wafers.
High Temperature Implantation Processes
Suitable for processes requiring elevated temperature to reduce crystal damage and improve dopant activation.
Power Device Fabrication
Used in power semiconductor devices requiring deep implantation and high energy processes.
Advanced Material Engineering
Supports ion implantation in advanced semiconductor materials and process development environments.
よくある質問
1. What wafer sizes does the Ai350HT support
The system supports 6-inch and 8-inch wafers and is suitable for both silicon-based and SiC semiconductor manufacturing lines.
2. What is the maximum temperature supported during implantation
The system supports high temperature implantation up to 500°C using a heated electrostatic chuck with mechanical clamping.
3. What are the main advantages of this system for SiC processes
The system combines high temperature capability, stable beam performance, and compatibility with SiC processes, making it suitable for wide bandgap semiconductor applications.
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