The Split-Type Vertical Airflow Silicon Carbide (SiC) Epitaxy Equipment is an advanced epitaxial growth system designed for high-efficiency production of 6-inch and 8-inch SiC epi-wafers. Featuring a modular split-type architecture, the power supply, exhaust modules, and EFEM/PM/TM modules can be independently installed in gray zones or mezzanine areas. This flexibility allows seamless integration into modern fab environments while maintaining full automation capability through SMIF module and overhead crane linkage.
The equipment incorporates an innovative vertical airflow design combined with multi-zone temperature field control, ensuring uniform thickness and stable doping concentration—critical for high-performance SiC power devices. Full automation, including EFEM wafer handling and high-temperature wafer transfer, reduces manual intervention, enhances process consistency, and improves operational efficiency.
The system supports dual-chamber continuous multi-furnace operation, achieving over 1100 wafers per month and up to 1200 wafers per month through process optimization. Its design is fully compatible with both 6-inch and 8-inch wafers, offering flexibility for manufacturers transitioning to larger wafer sizes. Additionally, the equipment is capable of high-pressure thick-film growth and trench-filling epitaxy, making it suitable for advanced high-voltage and high-power SiC devices.
The robust split-type construction ensures low defect density, high yield, simplified maintenance, and long-term reliability, minimizing the total cost of ownership for semiconductor manufacturers.
Vantaggi tecnici chiave
- Split-type modular design for independent installation of power, exhaust, and EFEM modules
- Vertical airflow showerhead for uniform gas distribution across the wafer
- Multi-zone temperature control for precise thermal management
- Dual-chamber configuration for high-throughput production
- Low defect density and high yield performance
- Fully automated wafer handling with EFEM and overhead crane integration
- Compatible with 6” and 8” SiC wafers
- Optimized for thick-film and trench-filling epitaxy
- High reliability and simplified maintenance
Process Performance
| Parametro | Specifiche |
|---|---|
| Throughput | ≥1100 wafers/month (dual chambers), up to 1200 wafers/month (optimized) |
| Wafer Size Compatibility | 6” / 8” SiC epi-wafers |
| Controllo della temperatura | Multi-zone |
| Airflow System | Vertical adjustable multi-zone airflow |
| Velocità di rotazione | 0–1000 rpm |
| Max Growth Rate | ≥60 μm/hour |
| Thickness Uniformity | ≤2% (optimized ≤1%, σ/avg, EE 5mm) |
| Doping Uniformity | ≤3% (optimized ≤1.5%, σ/avg, EE 5mm) |
| Killer Defect Density | ≤0.2 cm⁻² (optimized to 0.01 cm⁻²) |
Application Scenarios
The split-type vertical airflow SiC epitaxy equipment is widely used in high-performance SiC semiconductor manufacturing, particularly in industries requiring high efficiency, high voltage, and high thermal performance:
Electric Vehicles (EVs)
Used in the production of SiC MOSFETs and power modules for inverters, onboard chargers, and DC-DC converters, improving energy efficiency and driving range.
Renewable Energy Systems
Applied in photovoltaic inverters and energy storage systems, enabling higher conversion efficiency and reliability.
Industrial Power Electronics
Suitable for high-power motor drives, industrial automation systems, and power supply units requiring stable and efficient operation.
Rail Transit & Power Grids
Supports high-voltage and high-frequency devices used in smart grids, traction systems, and power transmission infrastructure.
High-End Power Devices
Ideal for manufacturing advanced SiC devices such as Schottky diodes, MOSFETs, and next-generation high-voltage components.
FAQ
1. What wafer sizes are supported by this split-type epitaxy equipment?
The system supports both 6-inch and 8-inch SiC wafers, allowing manufacturers to meet current production demands while preparing for future scaling.
2. What are the advantages of the split-type design?
The modular split design allows independent installation of power, exhaust, and EFEM modules, improving flexibility for fab layout and enhancing maintenance convenience.
3. How does the vertical airflow design improve epitaxy quality?
Vertical airflow ensures uniform gas distribution across the wafer, leading to consistent thickness, stable doping, and reduced defect density.
4. Is this equipment suitable for high-volume manufacturing?
Yes, the dual-chamber configuration supports continuous multi-furnace operation, with throughput exceeding 1100 wafers per month, making it ideal for large-scale production and ensuring consistent high-quality wafers with reduced operational downtime.
Recensioni
Ancora non ci sono recensioni.