The 6 Inch N-Type 6H SiC Epitaxy Wafer is a high-performance semiconductor substrate designed for advanced applications including MEMS devices, ultraviolet (UV) sensors, and epitaxial graphene growth. Manufactured from high-quality silicon carbide (SiC) monocrystals, this wafer combines excellent electrical, thermal, and mechanical properties, making it an ideal choice for demanding environments where conventional silicon materials cannot perform reliably.
With a standard diameter of 150 mm (6 inch) and a precisely controlled thickness of 350 µm, this wafer offers superior mechanical stability and process compatibility with modern semiconductor fabrication equipment. The 6H polytype features a wide bandgap of approximately 2.96 eV, enabling efficient operation in high-temperature, high-radiation, and chemically aggressive conditions.
Each wafer is processed to an epi-ready surface using advanced Chemical Mechanical Polishing (CMP) technology. This ensures ultra-low surface roughness, minimal subsurface damage, and optimal conditions for epitaxial layer growth processes such as Chemical Vapor Deposition (CVD). The result is improved device performance, higher yield, and enhanced reliability for critical applications.
الميزات الرئيسية
Epitaxy-Ready Surface for High-Quality Growth
The wafer is delivered with a mirror-like CMP-polished surface, achieving sub-nanometer roughness. This ensures excellent compatibility with epitaxial growth processes, particularly for graphene formation and UV-sensitive device fabrication.
Optimized for MEMS and Harsh Environments
The 6 Inch N-Type 6H SiC Epitaxy Wafer demonstrates exceptional thermal stability, maintaining performance at temperatures exceeding 500°C. Its high mechanical strength and chemical inertness make it suitable for MEMS devices operating in extreme environments such as aerospace, energy, and industrial monitoring systems.
Wide Bandgap for UV Sensor Applications
With a bandgap of approximately 2.96 eV, this wafer is naturally sensitive to ultraviolet light while remaining insensitive to visible wavelengths. This makes it ideal for solar-blind UV sensors used in flame detection, environmental monitoring, and defense systems.
Stable Electrical Performance
Nitrogen doping ensures reliable N-type conductivity, enabling consistent electrical characteristics and stable ohmic contact formation. This is essential for precision sensing devices and optoelectronic applications.
Controlled Crystal Orientation
The wafer features a 4° off-axis orientation toward <11-20> (±0.5°), which promotes step-flow epitaxial growth and reduces surface defects. This enhances uniformity and repeatability during device fabrication.
التطبيقات
MEMS Devices in Extreme Conditions
The 6 Inch N-Type 6H SiC Epitaxy Wafer is widely used in MEMS sensors such as pressure sensors and accelerometers designed for high-temperature and high-stress environments. These devices are critical in oil and gas exploration, automotive systems, and aerospace turbine monitoring.
Solar-Blind UV Sensors
Thanks to its wide bandgap, this wafer is ideal for manufacturing UV photodetectors that can accurately detect ultraviolet radiation without interference from visible light. This capability is essential for flame detection systems and advanced optical sensing technologies.
Graphene Growth Substrate
The wafer serves as a high-quality substrate for epitaxial graphene growth. Under high-temperature vacuum conditions, silicon atoms sublimate from the SiC surface, leaving behind well-ordered graphene layers. This process is widely used in advanced electronics, high-speed devices, and quantum research.
Advanced Optoelectronic Systems
The optical transparency and material stability of 6H-SiC make it suitable for specialized optoelectronic devices, including UV photodiodes and high-frequency components.
المواصفات الفنية
| الممتلكات | المواصفات |
|---|---|
| المواد | SiC Monocrystal |
| القطر | 150 mm (6 Inch) |
| السُمك | 350 µm |
| متعدد الأنواع | 6H |
| نوع الموصلية | N-Type (Nitrogen Doped) |
| التوجيه | 4° toward <11-20> ±0.5° |
| تشطيب السطح | SSP / DSP / CMP / MP |
| جودة السطح | Epitaxy-Ready (CMP Polished) |
| فجوة النطاق | ~2.96 eV |
| تركيز التطبيق | MEMS / UV Sensors / Graphene Growth |
| التعبئة والتغليف | Cassette or Single Wafer Container |
خيارات التخصيص
We provide flexible customization services to meet specific process and application requirements. Available options include:
- Custom wafer thickness
- Different off-cut angles (on-axis or tailored orientation)
- Doping concentration and resistivity control
- Surface finish and polishing grade
This ensures compatibility with various epitaxial processes and device structures, whether for research, prototyping, or pilot-scale production.
FAQs
Q1: What does “epi-ready” mean for this wafer?
A: It means the wafer surface has been precisely polished using CMP technology to achieve ultra-low roughness, making it immediately suitable for epitaxial growth without additional processing.
Q2: Why use 6H-SiC instead of other polytypes?
A: 6H-SiC offers advantages in UV detection, graphene growth, and optical applications due to its bandgap and crystal structure.
Q3: Is this wafer suitable for industrial production?
A: Yes, 6-inch wafers are widely used for pilot production and advanced R&D, depending on quality grade and application requirements.
Q4: Can I request customized specifications?
A: Yes, we support full customization including thickness, orientation, doping, and surface finishing.
Why Choose This 6 Inch N-Type 6H SiC Epitaxy Wafer
This wafer is engineered to deliver consistent performance, high material quality, and excellent compatibility with advanced semiconductor processes. It is an ideal solution for engineers and researchers seeking reliable substrates for MEMS, UV sensing, and graphene-based technologies.
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