Productoverzicht
The SiC Bonding Machine is a high-precision, vacuum-assisted system designed to bond wafers, SiC seeds, graphite paper, and graphite plates with exceptional accuracy and stability.
It ensures:
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Precise center alignment for wafers and substrates
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Uniform compression for stable, bubble-free bonding
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Reproducible results suitable for both R&D and small-to-medium scale production
Ideal for semiconductors, SiC seed bonding, high-temperature ceramics, and advanced materials research, this machine provides a reliable, efficient, and high-quality bonding solution.

Key Features & Advantages
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Precision Alignment – Mechanically ensures exact center positioning for perfect bonding.
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Vacuum-Assisted Bubble Removal – Eliminates air pockets for defect-free adhesive interfaces.
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Adjustable Pressure – Provides uniform compression for consistent bonding across substrates.
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Material Flexibility – Compatible with wafers, SiC seeds, graphite paper, and graphite plates.
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High Repeatability – Delivers consistent results for pilot-scale production or R&D projects.
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User-Friendly Interface – Simple controls for process monitoring and semi-automated operation.
System Features
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Vacuum-Assisted Bonding – Ensures bubble-free and uniform adhesion
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Precision Pressure Control – Adjustable for various substrate types and adhesive requirements
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Center Alignment Mechanism – Guarantees accurate positioning of wafers and SiC seeds
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Programmable Process Settings – Customizable temperature, pressure, and dwell time for precise control
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Compact, Modular Design – Easy integration and maintenance
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Data Logging & Monitoring – Records process parameters for quality assurance

Technische specificaties
| Parameter | Specificatie | Notes |
|---|---|---|
| Maximum Substrate Size | ≤12 inches | Supports small to medium wafers and substrates |
| Vacuümniveau | ≤10⁻² Pa | Ensures bubble-free bonding |
| Drukbereik | 0–5 MPa | Adjustable for uniform compression |
| Temperatuurbereik | Ambient – 300 °C | Optional heated bonding for special adhesives |
| Cycle Time | 5–60 min | Adjustable depending on substrate and process |
| Voeding | 220V / 380V | Single or three-phase depending on installation |
| Motion Control | Manual or semi-automated | For precise alignment and bonding |
Toepassingen
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SiC Seed Bonding – High-precision bonding for SiC seeds and wafers
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Semiconductor Wafer Bonding – Single or multi-layer wafer adhesion
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Graphite Substrate Bonding – High-temperature and high-strength bonding of graphite paper or plates
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Pilot and R&D Production – Small-batch, research, or pilot-scale production
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Advanced Materials – Bonding ceramics and composite substrates

FAQ – Frequently Asked Questions
Q1: What types of substrates can the machine handle?
A1: Wafers, SiC seeds, graphite paper, and graphite plates, including rigid and flexible materials.
Q2: How is bubble-free bonding achieved?
A2: Vacuum-assisted bonding removes trapped air, ensuring defect-free adhesive layers.
Q3: Can pressure and temperature be adjusted?
A3: Yes, pressure is adjustable from 0–5 MPa, and temperature can reach up to 300 °C for specialized adhesives.
Q4: Is this machine suitable for pilot-scale production?
A4: Yes, it is ideal for R&D, pilot-scale, and small-batch production.
Q5: How user-friendly is the operation?
A5: The interface is intuitive, with semi-automated alignment and easy process monitoring.




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