製品概要
The SiC Bonding Machine is a high-precision, vacuum-assisted system designed to bond wafers, SiC seeds, graphite paper, and graphite plates with exceptional accuracy and stability.
It ensures:
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Precise center alignment for wafers and substrates
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Uniform compression for stable, bubble-free bonding
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Reproducible results suitable for both R&D and small-to-medium scale production
Ideal for semiconductors, SiC seed bonding, high-temperature ceramics, and advanced materials research, this machine provides a reliable, efficient, and high-quality bonding solution.
主な特徴と利点
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Precision Alignment – Mechanically ensures exact center positioning for perfect bonding.
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Vacuum-Assisted Bubble Removal – Eliminates air pockets for defect-free adhesive interfaces.
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Adjustable Pressure – Provides uniform compression for consistent bonding across substrates.
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Material Flexibility – Compatible with wafers, SiC seeds, graphite paper, and graphite plates.
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High Repeatability – Delivers consistent results for pilot-scale production or R&D projects.
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User-Friendly Interface – Simple controls for process monitoring and semi-automated operation.
System Features
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Vacuum-Assisted Bonding – Ensures bubble-free and uniform adhesion
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Precision Pressure Control – Adjustable for various substrate types and adhesive requirements
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Center Alignment Mechanism – Guarantees accurate positioning of wafers and SiC seeds
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Programmable Process Settings – Customizable temperature, pressure, and dwell time for precise control
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Compact, Modular Design – Easy integration and maintenance
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Data Logging & Monitoring – Records process parameters for quality assurance
技術仕様
| パラメータ | 仕様 | 備考 |
|---|---|---|
| Maximum Substrate Size | ≤12 inches | Supports small to medium wafers and substrates |
| 真空レベル | ≤10⁻² Pa | Ensures bubble-free bonding |
| 圧力範囲 | 0–5 MPa | Adjustable for uniform compression |
| 温度範囲 | Ambient – 300 °C | Optional heated bonding for special adhesives |
| サイクルタイム | 5–60 min | Adjustable depending on substrate and process |
| 電源 | 220V / 380V | Single or three-phase depending on installation |
| モーション・コントロール | Manual or semi-automated | For precise alignment and bonding |
アプリケーション
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SiC Seed Bonding – High-precision bonding for SiC seeds and wafers
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Semiconductor Wafer Bonding – Single or multi-layer wafer adhesion
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Graphite Substrate Bonding – High-temperature and high-strength bonding of graphite paper or plates
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Pilot and R&D Production – Small-batch, research, or pilot-scale production
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Advanced Materials – Bonding ceramics and composite substrates
FAQ - よくある質問
Q1: What types of substrates can the machine handle?
A1: Wafers, SiC seeds, graphite paper, and graphite plates, including rigid and flexible materials.
Q2: How is bubble-free bonding achieved?
A2: Vacuum-assisted bonding removes trapped air, ensuring defect-free adhesive layers.
Q3: Can pressure and temperature be adjusted?
A3: Yes, pressure is adjustable from 0–5 MPa, and temperature can reach up to 300 °C for specialized adhesives.
Q4: Is this machine suitable for pilot-scale production?
A4: Yes, it is ideal for R&D, pilot-scale, and small-batch production.
Q5: How user-friendly is the operation?
A5: The interface is intuitive, with semi-automated alignment and easy process monitoring.
Request a Quote for SiC Precision Bonding Machine for Bubble-Free Wafer and SiC Seed Assembly
Tell us your required specifications, dimensions, quantity, application and technical requirements. You can also provide drawings or additional project information. Our technical team will review your requirements and reply as soon as possible.
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