Product Overview
The ZMSH SiC Single Crystal Resistance Heating Growth Furnace is a high-temperature crystal growth system specifically engineered for large-diameter silicon carbide single crystal production, supporting 6-inch, 8-inch, and 12-inch SiC wafer manufact
uring.
The furnace is designed based on the Physical Vapor Transport (PVT) crystal growth principle, integrating precise resistance heating control, stable thermal field distribution, high-vacuum environment management, and accurate pressure regulation.
This configuration enables the growth of high-purity, low-defect-density SiC single crystals suitable for advanced power semiconductor and electronic device applications.
The system is developed to meet industrial production requirements, ensuring process stability, repeatability, and long-term operational reliability in large-scale SiC crystal growth environments.
Core Technical Capabilities
High-Stability Resistance Heating System
The furnace adopts a multi-zone resistance heating structure to achieve uniform axial and radial temperature distribution. This minimizes thermal gradients, reduces internal stress, and improves crystal structural integrity during the growth process.
Precision Thermal and Pressure Control
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Maximum operating temperature up to 2500°C
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Temperature control accuracy: ±1°C
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Wide pressure regulation range: 1–700 mbar
These parameters provide a stable thermodynamic environment essential for controlled sublimation, vapor transport, and crystal recrystallization in SiC growth.
Large-Diameter Crystal Growth Capacity
With a 900 mm crucible diameter, the system supports the growth of next-generation 8-inch and 12-inch SiC ingots, enabling manufacturers to scale production while improving yield and wafer consistency.
High-Vacuum Growth Environment
The furnace maintains a low-leakage, high-vacuum growth chamber, ensuring reduced contamination risk, improved crystal purity, and stable long-duration operation.
Industrial Applications
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Power semiconductor substrates
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Electric vehicle power modules
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High-voltage MOSFET and diode devices
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Renewable energy power conversion systems
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High-frequency and RF electronic components
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Industrial power electronics
Technical Specifications
| No. | Specification | Details |
|---|---|---|
| 1 | Model | PVT-RS-40 |
| 2 | Furnace Dimensions (L × W × H) | 2500 × 2400 × 3456 mm |
| 3 | Crucible Diameter | 900 mm |
| 4 | Ultimate Vacuum Pressure | 6 × 10⁻⁴ Pa (after 1.5 h vacuum) |
| 5 | Leakage Rate | ≤5 Pa / 12 h (bake-out) |
| 6 | Rotation Shaft Diameter | 50 mm |
| 7 | Rotation Speed | 0.5–5 rpm |
| 8 | Heating Method | Electric resistance heating |
| 9 | Maximum Furnace Temperature | 2500°C |
| 10 | Heating Power | 40 kW × 2 + 20 kW |
| 11 | Temperature Measurement | Dual-color infrared pyrometer |
| 12 | Temperature Range | 900–3000°C |
| 13 | Temperature Accuracy | ±1°C |
| 14 | Pressure Range | 1–700 mbar |
| 15 | Pressure Control Accuracy | ±0.5% full scale |
| 16 | Operation Type | Bottom loading, manual or automatic safety modes |
| 17 | Optional Configurations | Multi-zone heating, dual temperature monitoring |
Crystal Growth Performance
The system enables the production of high-quality SiC single crystals with:
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Low dislocation density
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High structural uniformity
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Stable electrical properties
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Excellent thermal and mechanical performance
These characteristics are critical for semiconductor-grade wafers used in high-power, high-voltage, and high-frequency device manufacturing.
ZMSH Engineering Services
Custom System Configuration
Furnace structure, heating zones, control systems, and chamber dimensions can be customized according to production scale and wafer size requirements.
Installation and Commissioning
On-site system installation, calibration, and operational verification are provided by professional engineering teams.
Technical Training
Operator training programs include equipment operation, process control, maintenance, and fault diagnosis.
Long-Term Support
Lifecycle technical support, maintenance services, and spare parts supply ensure stable long-term operation.
FAQ
Q1: What crystal growth method does this furnace use?
A: The furnace operates based on the Physical Vapor Transport (PVT) method, which enables controlled sublimation and recrystallization of silicon carbide at high temperatures, making it suitable for high-quality single crystal growth.
Q2: What wafer sizes can the furnace support?
A: The system is designed for 6-inch, 8-inch, and 12-inch silicon carbide single crystal growth, supporting current and next-generation wafer manufacturing requirements.
Q3: Is the furnace suitable for industrial-scale production?
A: Yes. The system is engineered for continuous industrial operation, offering high thermal stability, process repeatability, and long-term reliability for large-scale SiC crystal production lines.
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