SiC Precision Bonding Machine for Bubble-Free Wafer and SiC Seed Assembly

The SiC Bonding Machine is a high-precision, vacuum-assisted system designed to bond wafers, SiC seeds, graphite paper, and graphite plates with exceptional accuracy and stability.

제품 개요

The SiC Bonding Machine is a high-precision, vacuum-assisted system designed to bond wafers, SiC seeds, graphite paper, and graphite plates with exceptional accuracy and stability.

It ensures:

  • Precise center alignment for wafers and substrates

  • Uniform compression for stable, bubble-free bonding

  • Reproducible results suitable for both R&D and small-to-medium scale production

Ideal for semiconductors, SiC seed bonding, high-temperature ceramics, and advanced materials research, this machine provides a reliable, efficient, and high-quality bonding solution.

Key Features & Advantages

  • Precision Alignment – Mechanically ensures exact center positioning for perfect bonding.

  • Vacuum-Assisted Bubble Removal – Eliminates air pockets for defect-free adhesive interfaces.

  • Adjustable Pressure – Provides uniform compression for consistent bonding across substrates.

  • Material Flexibility – Compatible with wafers, SiC seeds, graphite paper, and graphite plates.

  • High Repeatability – Delivers consistent results for pilot-scale production or R&D projects.

  • User-Friendly Interface – Simple controls for process monitoring and semi-automated operation.

System Features

  • Vacuum-Assisted Bonding – Ensures bubble-free and uniform adhesion

  • Precision Pressure Control – Adjustable for various substrate types and adhesive requirements

  • Center Alignment Mechanism – Guarantees accurate positioning of wafers and SiC seeds

  • Programmable Process Settings – Customizable temperature, pressure, and dwell time for precise control

  • Compact, Modular Design – Easy integration and maintenance

  • Data Logging & Monitoring – Records process parameters for quality assurance

기술 사양

매개변수 사양 Notes
Maximum Substrate Size ≤12 inches Supports small to medium wafers and substrates
진공 레벨 ≤10⁻² Pa Ensures bubble-free bonding
압력 범위 0–5 MPa Adjustable for uniform compression
온도 범위 Ambient – 300 °C Optional heated bonding for special adhesives
Cycle Time 5–60 min Adjustable depending on substrate and process
전원 공급 장치 220V / 380V Single or three-phase depending on installation
Motion Control Manual or semi-automated For precise alignment and bonding

애플리케이션

  • SiC Seed Bonding – High-precision bonding for SiC seeds and wafers

  • Semiconductor Wafer Bonding – Single or multi-layer wafer adhesion

  • Graphite Substrate Bonding – High-temperature and high-strength bonding of graphite paper or plates

  • Pilot and R&D Production – Small-batch, research, or pilot-scale production

  • Advanced Materials – Bonding ceramics and composite substrates

FAQ – Frequently Asked Questions

Q1: What types of substrates can the machine handle?
A1: Wafers, SiC seeds, graphite paper, and graphite plates, including rigid and flexible materials.

Q2: How is bubble-free bonding achieved?
A2: Vacuum-assisted bonding removes trapped air, ensuring defect-free adhesive layers.

Q3: Can pressure and temperature be adjusted?
A3: Yes, pressure is adjustable from 0–5 MPa, and temperature can reach up to 300 °C for specialized adhesives.

Q4: Is this machine suitable for pilot-scale production?
A4: Yes, it is ideal for R&D, pilot-scale, and small-batch production.

Q5: How user-friendly is the operation?
A5: The interface is intuitive, with semi-automated alignment and easy process monitoring.

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