The Integrated Vertical Airflow Silicon Carbide (SiC) Epitaxy Equipment is an advanced epitaxial growth system engineered for high-efficiency production of 6-inch and 8-inch SiC epi-wafers. Designed to meet the growing demands of power semiconductor manufacturing, this system integrates precise thermal control, optimized gas flow dynamics, and intelligent automation to deliver exceptional performance in uniformity, throughput, and defect control.
At the core of the system is an innovative vertical airflow showerhead design, which enables uniform distribution of process gases across the wafer surface. Combined with multi-zone temperature field control, it ensures excellent thickness uniformity and stable doping concentration—critical for high-performance SiC power devices.
The system adopts a highly integrated structure with automated wafer handling via an EFEM system, along with a high-temperature wafer transfer mechanism. This enables seamless integration into modern semiconductor fabrication lines, reduces manual intervention, and improves process consistency and operational efficiency.
To support industrial-scale manufacturing, the equipment features a dual-chamber configuration capable of continuous multi-furnace operation. With a throughput of over 1100 wafers per month—and up to 1200 wafers through process optimization—it is well suited for high-volume production environments.
The equipment is compatible with both 6-inch and 8-inch SiC wafers, offering flexibility for manufacturers transitioning toward larger wafer sizes. It also demonstrates excellent capability in thick epitaxial layer growth and trench-filling epitaxy, making it particularly suitable for advanced high-voltage and high-power device fabrication.
In addition, the optimized reactor design ensures low defect density, improved yield, and reduced cost of ownership. Its robust construction and maintenance-friendly design further enhance long-term reliability and operational stability.
Principales ventajas técnicas
- Vertical airflow showerhead design for uniform gas distribution
- Multi-zone temperature control for precise thermal management
- Dual-chamber configuration for high throughput production
- Low defect density and high yield performance
- Automated wafer handling with EFEM integration
- Compatibility with 6” and 8” SiC wafers
- Optimized for thick epitaxy and trench-filling processes
- High reliability with simplified maintenance
Process Performance
| Parámetro | Especificación |
|---|---|
| Throughput | ≥1100 wafers/month (dual chambers), up to 1200 wafers/month (optimized) |
| Wafer Size Compatibility | 6” / 8” SiC epi-wafers |
| Control de la temperatura | Multi-zone |
| Airflow System | Vertical adjustable multi-zone airflow |
| Velocidad de rotación | 0–1000 rpm |
| Max Growth Rate | ≥60 μm/hour |
| Thickness Uniformity | ≤2% (optimized ≤1%, σ/avg, EE 5mm) |
| Doping Uniformity | ≤3% (optimized ≤1.5%, σ/avg, EE 5mm) |
| Killer Defect Density | ≤0.2 cm⁻² (optimized to 0.01 cm⁻²) |
Application Scenarios
This equipment is widely used in the production of advanced SiC-based semiconductor devices, particularly in industries requiring high efficiency, high voltage, and high thermal performance:
- Electric Vehicles (EVs)
Used in the production of SiC MOSFETs and power modules for inverters, onboard chargers, and DC-DC converters, improving energy efficiency and driving range. - Renewable Energy Systems
Applied in photovoltaic inverters and energy storage systems, enabling higher conversion efficiency and system reliability. - Industrial Power Electronics
Suitable for high-power motor drives, industrial automation systems, and power supply units requiring stable and efficient operation. - Rail Transit & Power Grids
Supports high-voltage and high-frequency devices used in smart grids, traction systems, and power transmission infrastructure. - High-End Power Devices
Ideal for manufacturing advanced SiC devices such as Schottky diodes, MOSFETs, and next-generation high-voltage components.
PREGUNTAS FRECUENTES
1. What wafer sizes are supported by this epitaxy equipment?
The system supports both 6-inch and 8-inch SiC wafers, allowing manufacturers to meet current production demands while preparing for future scaling.
2. What advantages does the vertical airflow design provide?
The vertical airflow system ensures uniform gas distribution across the wafer, improving thickness consistency, reducing defects, and enhancing overall epitaxial quality.
3. Is this equipment suitable for high-volume manufacturing?
Yes, the system features a dual-chamber configuration and continuous operation mode, with a monthly throughput exceeding 1100 wafers. It is well-suited for stable, large-scale industrial production, ensuring consistent output, high yield stability, and long-term operational efficiency.
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