PVT、LelyおよびTSSG法による6インチおよび8インチ結晶用SiC単結晶成長炉

製品概要

The ZMSH SiC Single Crystal Growth Furnace is a high-temperature crystal growth system engineered for 6-inch and 8-inch silicon carbide single crystal production.
The furnace supports multiple mature growth technologies, including Physical Vapor Transport (PVT), Lely, and Temperature Gradient (TSSG) methods, enabling flexible process selection according to crystal size, polytype, and production targets.

The system adopts graphite resistance heating and operates under a controlled vacuum and inert gas atmosphere. By precisely regulating temperature gradients, chamber pressure, and gas flow, the furnace provides a stable environment for consistent SiC sublimation, transport, and recrystallization, ensuring reliable ingot quality for semiconductor-grade applications.

Designed for industrial-scale operation, the furnace emphasizes process stability, repeatability, and long-term reliability in SiC crystal manufacturing.

結晶成長能力

The furnace is capable of growing multiple SiC crystal polytypes, including:

• Conductive 4H-SiC

• Semi-insulating 4H-SiC

• Other polytypes such as 6H, 2H, and 3C

Among these, 4H-SiC, which is widely used in power semiconductor devices, has been repeatedly and successfully grown using ZMSH furnaces in customer production environments.
Independent control of axial and radial temperature gradients helps reduce thermal stress, suppress defect formation, and improve effective crystal thickness.

主な技術的利点

Optimized Thermal Field Control

The furnace features a well-balanced thermal field design with precise control of axial and radial temperature gradients. This enables a smooth temperature profile and a stable crystal growth interface, improving crystal uniformity and material utilization efficiency.

High Precision Process Control

Advanced control systems ensure stable operation throughout the growth cycle, providing accurate regulation of heating power, temperature, gas flow, and chamber pressure. These capabilities are essential for producing high-purity SiC crystals with low defect density.

Automated and Intelligent Operation

The system integrates automated monitoring, real-time data recording, safety alarms, and remote access functions. Automation reduces operator dependence, improves process consistency, and supports long-term continuous production.

代表的なアプリケーション

• SiC substrates for power semiconductor devices

• High-voltage MOSFETs and diodes

• Electric vehicle power electronics

• 再生可能エネルギー電力変換システム

• Industrial power modules

技術仕様

一般的な炉のパラメーター

6-Inch SiC Crystal Growth Capability

8-Inch SiC Crystal Growth Capability

産業の信頼性

The furnace is designed for continuous industrial operation, offering stable thermal performance, repeatable growth conditions, and consistent crystal quality across multiple growth cycles.
Its structure and control architecture support long-term use in SiC substrate manufacturing lines where yield stability and process control are critical.

ZMSHエンジニアリングサービス

ZMSH provides complete technical support throughout the equipment lifecycle, including customized system configuration, on-site installation and commissioning, operator training, and responsive after-sales service.
Our engineering team works closely with customers to optimize crystal growth processes and ensure stable production performance.

よくあるご質問

Q1: Which SiC crystal growth methods can be implemented with this furnace?
A: The furnace supports Physical Vapor Transport (PVT), Lely, and Temperature Gradient (TSSG) crystal growth methods. Process selection can be adjusted according to crystal size, polytype, and production objectives.

Q2: What SiC polytypes are suitable for growth using this system?
A: The system supports conductive and semi-insulating 4H-SiC, as well as other polytypes such as 6H, 2H, and 3C. Among these, 4H-SiC is the primary polytype used for power semiconductor applications.

Q3: Is this furnace suitable for industrial-scale SiC crystal production?
A: Yes. The furnace is designed for industrial use, offering stable temperature control, automated operation, and high repeatability, making it suitable for continuous and scalable SiC crystal manufacturing.