{"id":2433,"date":"2026-04-28T05:47:10","date_gmt":"2026-04-28T05:47:10","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2433"},"modified":"2026-04-28T05:47:12","modified_gmt":"2026-04-28T05:47:12","slug":"sic-dummy-wafer-for-equipment-qualification-process-debugging-wafer-warm-up-and-production-wafer-protection","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/vi\/product\/sic-dummy-wafer-for-equipment-qualification-process-debugging-wafer-warm-up-and-production-wafer-protection\/","title":{"rendered":"T\u1ea5m wafer gi\u1ea3 SiC d\u00f9ng cho vi\u1ec7c \u0111\u00e1nh gi\u00e1 thi\u1ebft b\u1ecb, kh\u1eafc ph\u1ee5c s\u1ef1 c\u1ed1 quy tr\u00ecnh, l\u00e0m n\u00f3ng t\u1ea5m wafer v\u00e0 b\u1ea3o v\u1ec7 t\u1ea5m wafer trong s\u1ea3n xu\u1ea5t"},"content":{"rendered":"<section class=\"text-token-text-primary w-full focus:outline-none [--shadow-height:45px] has-data-writing-block:pointer-events-none has-data-writing-block:-mt-(--shadow-height) has-data-writing-block:pt-(--shadow-height) [&amp;:has([data-writing-block])&gt;*]:pointer-events-auto [content-visibility:auto] supports-[content-visibility:auto]:[contain-intrinsic-size:auto_100lvh] R6Vx5W_threadScrollVars scroll-mb-[calc(var(--scroll-root-safe-area-inset-bottom,0px)+var(--thread-response-height))] scroll-mt-[calc(var(--header-height)+min(200px,max(70px,20svh)))]\" dir=\"auto\" data-turn-id=\"request-WEB:5111ad06-90c4-44cb-afe1-7e1645b0d654-2\" data-testid=\"conversation-turn-6\" data-scroll-anchor=\"false\" data-turn=\"assistant\">\n<div class=\"text-base my-auto mx-auto pb-10 [--thread-content-margin:var(--thread-content-margin-xs,calc(var(--spacing)*4))] @w-sm\/main:[--thread-content-margin:var(--thread-content-margin-sm,calc(var(--spacing)*6))] @w-lg\/main:[--thread-content-margin:var(--thread-content-margin-lg,calc(var(--spacing)*16))] px-(--thread-content-margin)\">\n<div class=\"[--thread-content-max-width:40rem] @w-lg\/main:[--thread-content-max-width:48rem] mx-auto max-w-(--thread-content-max-width) flex-1 group\/turn-messages focus-visible:outline-hidden relative flex w-full min-w-0 flex-col agent-turn\">\n<div class=\"flex max-w-full flex-col gap-4 grow\">\n<div class=\"min-h-8 text-message relative flex w-full flex-col items-end gap-2 text-start break-words whitespace-normal outline-none keyboard-focused:focus-ring [.text-message+&amp;]:mt-1\" dir=\"auto\" tabindex=\"0\" data-message-author-role=\"assistant\" data-message-id=\"a77dc148-bea9-43ff-b657-43ce910419ae\" data-message-model-slug=\"gpt-5-3-mini\" data-turn-start-message=\"true\">\n<div class=\"flex w-full flex-col gap-1 empty:hidden\">\n<div class=\"markdown prose dark:prose-invert w-full wrap-break-word light markdown-new-styling\">\n<p data-start=\"211\" data-end=\"676\"><img fetchpriority=\"high\" decoding=\"async\" class=\"alignright wp-image-2436 size-medium\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-1-300x300.png\" alt=\"SiC Dummy Wafer for Equipment Qualification, Process Debugging, Wafer Warm-Up, and Production Wafer Protection\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-1-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-1-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-1-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-1-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-1-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-1-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-1.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>The SiC Dummy Wafer (Silicon Carbide Test Wafer \/ Carrier Wafer) is a high-performance process wafer designed for semiconductor manufacturing equipment qualification, process development, chamber conditioning (warm-up), and production wafer protection. It does not serve as a device wafer but plays a critical role in stabilizing process environments, maintaining chamber loading conditions, and ensuring process repeatability in advanced semiconductor fabrication.<\/p>\n<p data-start=\"678\" data-end=\"1138\">In modern semiconductor fabs, SiC dummy wafers are widely used during equipment start-up, recipe tuning, and maintenance cycles. They help stabilize chamber temperature, pressure, and gas flow distribution before actual production wafers are processed. In addition, they are used to fill wafer slots in batch systems to ensure uniform thermal and plasma conditions, effectively protecting high-value production wafers from contamination or process instability.<\/p>\n<p data-start=\"1140\" data-end=\"1396\">Compared with conventional silicon (Si) wafers, silicon carbide (SiC) dummy wafers offer significantly superior material properties, making them ideal for harsh processing environments involving high temperature, corrosive chemicals, and mechanical stress.<\/p>\n<hr data-start=\"1398\" data-end=\"1401\" \/>\n<h2 data-section-id=\"1jmolfp\" data-start=\"1403\" data-end=\"1435\"><img decoding=\"async\" class=\"alignright wp-image-2434 size-medium\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-2-300x300.png\" alt=\"SiC Dummy Wafer for Equipment Qualification, Process Debugging, Wafer Warm-Up, and Production Wafer Protection\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-2-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-2-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-2-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-2-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-2-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-2-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection-2.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Key Advantages of SiC vs Si<\/h2>\n<p data-start=\"1437\" data-end=\"1727\"><strong data-start=\"1437\" data-end=\"1473\">1. Excellent Chemical Resistance<\/strong><br data-start=\"1473\" data-end=\"1476\" \/>SiC exhibits outstanding resistance to strong acids and alkalis. In most wet chemical environments, only specific wet etching processes can remove deposited films. This enables repeated reuse, significantly improving cost efficiency in fab operations.<\/p>\n<p data-start=\"1729\" data-end=\"2029\"><strong data-start=\"1729\" data-end=\"1771\">2. Superior High-Temperature Stability<\/strong><br data-start=\"1771\" data-end=\"1774\" \/>During high-temperature processing, SiC wafers maintain extremely low thermal deformation. This ensures excellent dimensional stability and reduces wafer warpage, making them highly suitable for thermal annealing and high-temperature deposition processes.<\/p>\n<p data-start=\"2031\" data-end=\"2317\"><strong data-start=\"2031\" data-end=\"2084\">3. High Thermal Conductivity (Critical Advantage)<\/strong><br data-start=\"2084\" data-end=\"2087\" \/>The thermal conductivity of SiC is more than three times higher than that of Si. This allows faster and more uniform heat distribution, effectively reducing thermal stress and improving process uniformity across the wafer surface.<\/p>\n<hr data-start=\"2319\" data-end=\"2322\" \/>\n<h2 data-section-id=\"ncdigx\" data-start=\"2324\" data-end=\"2363\">Key Material Properties Comparison<\/h2>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"2365\" data-end=\"2707\">\n<thead data-start=\"2365\" data-end=\"2395\">\n<tr data-start=\"2365\" data-end=\"2395\">\n<th class=\"\" data-start=\"2365\" data-end=\"2376\" data-col-size=\"sm\">Property<\/th>\n<th class=\"\" data-start=\"2376\" data-end=\"2383\" data-col-size=\"sm\">Unit<\/th>\n<th class=\"\" data-start=\"2383\" data-end=\"2389\" data-col-size=\"sm\">SiC<\/th>\n<th class=\"\" data-start=\"2389\" data-end=\"2395\" data-col-size=\"sm\">Si<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"2427\" data-end=\"2707\">\n<tr data-start=\"2427\" data-end=\"2460\">\n<td data-start=\"2427\" data-end=\"2437\" data-col-size=\"sm\">Density<\/td>\n<td data-start=\"2437\" data-end=\"2445\" data-col-size=\"sm\">g\/cm\u00b3<\/td>\n<td data-start=\"2445\" data-end=\"2452\" data-col-size=\"sm\">3.21<\/td>\n<td data-start=\"2452\" data-end=\"2460\" data-col-size=\"sm\">2.33<\/td>\n<\/tr>\n<tr data-start=\"2461\" data-end=\"2492\">\n<td data-start=\"2461\" data-end=\"2472\" data-col-size=\"sm\">Band Gap<\/td>\n<td data-start=\"2472\" data-end=\"2477\" data-col-size=\"sm\">eV<\/td>\n<td data-start=\"2477\" data-end=\"2484\" data-col-size=\"sm\">3.26<\/td>\n<td data-start=\"2484\" data-end=\"2492\" data-col-size=\"sm\">1.12<\/td>\n<\/tr>\n<tr data-start=\"2493\" data-end=\"2538\">\n<td data-start=\"2493\" data-end=\"2516\" data-col-size=\"sm\">Thermal Conductivity<\/td>\n<td data-col-size=\"sm\" data-start=\"2516\" data-end=\"2525\">W\/cm\u00b7K<\/td>\n<td data-col-size=\"sm\" data-start=\"2525\" data-end=\"2531\">2.9<\/td>\n<td data-col-size=\"sm\" data-start=\"2531\" data-end=\"2538\">1.5<\/td>\n<\/tr>\n<tr data-start=\"2539\" data-end=\"2591\">\n<td data-start=\"2539\" data-end=\"2560\" data-col-size=\"sm\">CTE (RT to 1000\u00b0C)<\/td>\n<td data-col-size=\"sm\" data-start=\"2560\" data-end=\"2570\">\u00d710\u207b\u2076\/K<\/td>\n<td data-col-size=\"sm\" data-start=\"2570\" data-end=\"2580\">4.1\u20135.0<\/td>\n<td data-col-size=\"sm\" data-start=\"2580\" data-end=\"2591\">2.6\u20135.5<\/td>\n<\/tr>\n<tr data-start=\"2592\" data-end=\"2625\">\n<td data-start=\"2592\" data-end=\"2608\" data-col-size=\"sm\">Mohs Hardness<\/td>\n<td data-start=\"2608\" data-end=\"2612\" data-col-size=\"sm\">\u2014<\/td>\n<td data-start=\"2612\" data-end=\"2618\" data-col-size=\"sm\">9.2<\/td>\n<td data-col-size=\"sm\" data-start=\"2618\" data-end=\"2625\">7.0<\/td>\n<\/tr>\n<tr data-start=\"2626\" data-end=\"2669\">\n<td data-start=\"2626\" data-end=\"2646\" data-col-size=\"sm\">Flexural Strength<\/td>\n<td data-start=\"2646\" data-end=\"2652\" data-col-size=\"sm\">MPa<\/td>\n<td data-start=\"2652\" data-end=\"2658\" data-col-size=\"sm\">590<\/td>\n<td data-col-size=\"sm\" data-start=\"2658\" data-end=\"2669\">150\u2013200<\/td>\n<\/tr>\n<tr data-start=\"2670\" data-end=\"2707\">\n<td data-start=\"2670\" data-end=\"2688\" data-col-size=\"sm\">Young\u2019s Modulus<\/td>\n<td data-col-size=\"sm\" data-start=\"2688\" data-end=\"2694\">GPa<\/td>\n<td data-col-size=\"sm\" data-start=\"2694\" data-end=\"2700\">450<\/td>\n<td data-col-size=\"sm\" data-start=\"2700\" data-end=\"2707\">200<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<p data-start=\"2709\" data-end=\"2729\"><strong data-start=\"2709\" data-end=\"2727\">Summary Notes:<\/strong><\/p>\n<ul data-start=\"2730\" data-end=\"3102\">\n<li data-section-id=\"1fmjqrg\" data-start=\"2730\" data-end=\"2808\">SiC performs significantly better in high-temperature environments than Si<\/li>\n<li data-section-id=\"7aeend\" data-start=\"2809\" data-end=\"2889\">Thermal conductivity is over 3\u00d7 higher than silicon, reducing thermal stress<\/li>\n<li data-section-id=\"nz8yso\" data-start=\"2890\" data-end=\"2957\">SiC offers superior wear resistance for repeated process cycles<\/li>\n<li data-section-id=\"l6xjvb\" data-start=\"2958\" data-end=\"3014\">Si is more prone to elastic deformation under stress<\/li>\n<li data-section-id=\"106lvzq\" data-start=\"3015\" data-end=\"3102\">SiC is more suitable for high-power, high-temperature, and high-stress applications<\/li>\n<\/ul>\n<hr data-start=\"3104\" data-end=\"3107\" \/>\n<h2 data-section-id=\"1mak661\" data-start=\"3109\" data-end=\"3158\">Thermal Conductivity Comparison: SiC vs SiO\u2082<\/h2>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"3160\" data-end=\"3550\">\n<thead data-start=\"3160\" data-end=\"3211\">\n<tr data-start=\"3160\" data-end=\"3211\">\n<th class=\"\" data-start=\"3160\" data-end=\"3171\" data-col-size=\"sm\">Material<\/th>\n<th class=\"\" data-start=\"3171\" data-end=\"3202\" data-col-size=\"sm\">Thermal Conductivity W\/(m\u00b7K)<\/th>\n<th class=\"\" data-start=\"3202\" data-end=\"3211\" data-col-size=\"md\">Notes<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"3263\" data-end=\"3550\">\n<tr data-start=\"3263\" data-end=\"3347\">\n<td data-start=\"3263\" data-end=\"3288\" data-col-size=\"sm\">Amorphous SiO\u2082 (Glass)<\/td>\n<td data-start=\"3288\" data-end=\"3298\" data-col-size=\"sm\">1.0\u20131.5<\/td>\n<td data-start=\"3298\" data-end=\"3347\" data-col-size=\"md\">Low thermal conductivity, insulating behavior<\/td>\n<\/tr>\n<tr data-start=\"3348\" data-end=\"3413\">\n<td data-start=\"3348\" data-end=\"3372\" data-col-size=\"sm\">Single-Crystal Quartz<\/td>\n<td data-start=\"3372\" data-end=\"3379\" data-col-size=\"sm\">6\u201314<\/td>\n<td data-start=\"3379\" data-end=\"3413\" data-col-size=\"md\">Anisotropic thermal conduction<\/td>\n<\/tr>\n<tr data-start=\"3414\" data-end=\"3486\">\n<td data-start=\"3414\" data-end=\"3446\" data-col-size=\"sm\">High-Temperature Quartz Phase<\/td>\n<td data-start=\"3446\" data-end=\"3452\" data-col-size=\"sm\">2\u20133<\/td>\n<td data-start=\"3452\" data-end=\"3486\" data-col-size=\"md\">Slightly improved conductivity<\/td>\n<\/tr>\n<tr data-start=\"3487\" data-end=\"3550\">\n<td data-start=\"3487\" data-end=\"3493\" data-col-size=\"sm\">SiC<\/td>\n<td data-start=\"3493\" data-end=\"3512\" data-col-size=\"sm\">Tens to hundreds<\/td>\n<td data-col-size=\"md\" data-start=\"3512\" data-end=\"3550\">High thermal conductivity material<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<p data-start=\"3552\" data-end=\"3783\"><strong data-start=\"3552\" data-end=\"3567\">Conclusion:<\/strong><br data-start=\"3567\" data-end=\"3570\" \/>SiC is a high thermal conductivity material designed for efficient heat dissipation and high-temperature stability, while SiO\u2082 materials are primarily used for insulation and low thermal conductivity applications.<\/p>\n<hr data-start=\"3785\" data-end=\"3788\" \/>\n<h2 data-section-id=\"ce0tqk\" data-start=\"3790\" data-end=\"3807\"><img decoding=\"async\" class=\"alignright wp-image-2437 size-medium\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection4-300x300.png\" alt=\"SiC Dummy Wafer for Equipment Qualification, Process Debugging, Wafer Warm-Up, and Production Wafer Protection\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection4-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection4-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection4-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection4-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection4-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection4-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/SiC-Dummy-Wafer-for-Equipment-Qualification-Process-Debugging-Wafer-Warm-Up-and-Production-Wafer-Protection4.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Applications<\/h2>\n<ul data-start=\"3808\" data-end=\"4107\">\n<li data-section-id=\"5k1oft\" data-start=\"3808\" data-end=\"3865\">Semiconductor equipment qualification and calibration<\/li>\n<li data-section-id=\"szjrhu\" data-start=\"3866\" data-end=\"3913\">Process development and recipe optimization<\/li>\n<li data-section-id=\"zquu2f\" data-start=\"3914\" data-end=\"3959\">Chamber warm-up (pre-conditioning wafers)<\/li>\n<li data-section-id=\"1cg0ecx\" data-start=\"3960\" data-end=\"4004\">Wafer slot filling for process stability<\/li>\n<li data-section-id=\"1ueuex0\" data-start=\"4005\" data-end=\"4063\">Plasma etching, CVD, PVD, and ion implantation systems<\/li>\n<li data-section-id=\"1wwa1yx\" data-start=\"4064\" data-end=\"4107\">Thermal and gas flow uniformity testing<\/li>\n<\/ul>\n<hr data-start=\"4109\" data-end=\"4112\" \/>\n<h2 data-section-id=\"x9bttf\" data-start=\"4114\" data-end=\"4122\">FAQ<\/h2>\n<p data-start=\"4124\" data-end=\"4329\"><strong data-start=\"4124\" data-end=\"4163\">Q1: Can SiC dummy wafers be reused?<\/strong><br data-start=\"4163\" data-end=\"4166\" \/>A1: Yes. Due to their strong chemical resistance, SiC wafers can be reused multiple times after proper cleaning, making them cost-effective for semiconductor fabs.<\/p>\n<p data-start=\"4331\" data-end=\"4521\"><strong data-start=\"4331\" data-end=\"4389\">Q2: What equipment is SiC dummy wafer compatible with?<\/strong><br data-start=\"4389\" data-end=\"4392\" \/>A2: They are widely used in etching systems, CVD\/PVD tools, annealing furnaces, ion implantation systems, and cleaning equipment.<\/p>\n<p data-start=\"4523\" data-end=\"4771\" data-is-last-node=\"\" data-is-only-node=\"\"><strong data-start=\"4523\" data-end=\"4588\">Q3: Why is SiC better than Si for high-temperature processes?<\/strong><br data-start=\"4588\" data-end=\"4591\" \/>A3: SiC has higher thermal conductivity, superior mechanical strength, and lower thermal deformation, allowing stable performance under high-temperature and high-stress conditions.<\/p>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<div class=\"z-0 flex min-h-[46px] justify-start\"><\/div>\n<div class=\"mt-3 w-full empty:hidden\">\n<div class=\"text-center\"><\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/section>\n<div class=\"pointer-events-none -mt-px h-px translate-y-[calc(var(--scroll-root-safe-area-inset-bottom)-14*var(--spacing))]\" aria-hidden=\"true\"><\/div>\n","protected":false},"excerpt":{"rendered":"<p>T\u1ea5m wafer gi\u1ea3 SiC (T\u1ea5m wafer th\u1eed nghi\u1ec7m cacbua silic \/ T\u1ea5m wafer mang) l\u00e0 m\u1ed9t lo\u1ea1i t\u1ea5m wafer quy tr\u00ecnh hi\u1ec7u su\u1ea5t cao, \u0111\u01b0\u1ee3c thi\u1ebft k\u1ebf \u0111\u1ec3 ki\u1ec3m \u0111\u1ecbnh thi\u1ebft b\u1ecb s\u1ea3n xu\u1ea5t b\u00e1n d\u1eabn, ph\u00e1t tri\u1ec3n quy tr\u00ecnh, \u0111i\u1ec1u h\u00f2a bu\u1ed3ng (l\u00e0m n\u00f3ng) v\u00e0 b\u1ea3o v\u1ec7 t\u1ea5m wafer s\u1ea3n xu\u1ea5t. S\u1ea3n ph\u1ea9m n\u00e0y kh\u00f4ng \u0111\u01b0\u1ee3c s\u1eed d\u1ee5ng nh\u01b0 m\u1ed9t t\u1ea5m wafer thi\u1ebft b\u1ecb, nh\u01b0ng \u0111\u00f3ng vai tr\u00f2 quan tr\u1ecdng trong vi\u1ec7c \u1ed5n \u0111\u1ecbnh m\u00f4i tr\u01b0\u1eddng quy tr\u00ecnh, duy tr\u00ec \u0111i\u1ec1u ki\u1ec7n n\u1ea1p bu\u1ed3ng v\u00e0 \u0111\u1ea3m b\u1ea3o t\u00ednh l\u1eb7p l\u1ea1i c\u1ee7a quy tr\u00ecnh trong s\u1ea3n xu\u1ea5t b\u00e1n d\u1eabn ti\u00ean ti\u1ebfn.<\/p>","protected":false},"featured_media":2435,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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