{"id":2167,"date":"2026-04-14T02:28:42","date_gmt":"2026-04-14T02:28:42","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2167"},"modified":"2026-04-14T02:28:45","modified_gmt":"2026-04-14T02:28:45","slug":"4-inch-4h-n-silicon-carbide-wafer","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/vi\/product\/4-inch-4h-n-silicon-carbide-wafer\/","title":{"rendered":"T\u1ea5m wafer cacbua silic 4 inch (100 mm) lo\u1ea1i 4H-N"},"content":{"rendered":"

\"T\u1ea5mThe 4 inch 4H-N silicon carbide wafer is a conductive SiC substrate designed for advanced power semiconductor applications. It is based on the 4H crystal polytype, which is widely recognized in the industry for its superior electrical and thermal performance.<\/p>\n

Silicon carbide belongs to the third-generation semiconductor materials and offers significant advantages over traditional silicon. Its wide bandgap, high breakdown electric field, and excellent thermal conductivity make it highly suitable for devices operating under high voltage, high frequency, and high temperature conditions.<\/p>\n

This wafer is commonly used for manufacturing power devices such as MOSFETs, Schottky barrier diodes, JFETs, and IGBTs. These devices are critical components in modern energy systems, where efficiency, reliability, and compact design are essential. The 4 inch format provides a balance between cost efficiency and device yield, making it widely adopted in both research and industrial production environments.<\/p>\n

Th\u00f4ng s\u1ed1 k\u1ef9 thu\u1eadt<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Tham s\u1ed1<\/th>\nGi\u00e1 tr\u1ecb<\/th>\n<\/tr>\n<\/thead>\n
\u0110\u01b0\u1eddng k\u00ednh<\/td>\n100 \u00b1 0,5 mm<\/td>\n<\/tr>\n
\u0110\u1ed9 d\u00e0y<\/td>\n350 \u00b1 25 \u03bcm<\/td>\n<\/tr>\n
Lo\u1ea1i h\u00ecnh<\/td>\n4H<\/td>\n<\/tr>\n
Lo\u1ea1i \u0111\u1ed9 d\u1eabn \u0111i\u1ec7n<\/td>\nLo\u1ea1i N<\/td>\n<\/tr>\n
\u0110\u1ed9 nh\u00e1m b\u1ec1 m\u1eb7t<\/td>\nRa \u2264 0.2 nm<\/td>\n<\/tr>\n
TTV<\/td>\n\u2264 10 \u03bcm<\/td>\n<\/tr>\n
Warp<\/td>\n\u2264 30 \u03bcm<\/td>\n<\/tr>\n
M\u1eadt \u0111\u1ed9 khuy\u1ebft t\u1eadt<\/td>\nMPD < 1 ea\/cm\u00b2<\/td>\n<\/tr>\n
Edge<\/td>\n45\u00b0 bevel, SEMI standard<\/td>\n<\/tr>\n
L\u1edbp<\/td>\nS\u1ea3n xu\u1ea5t \/ Nghi\u00ean c\u1ee9u \/ M\u00f4 h\u00ecnh<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

These parameters ensure high surface quality and dimensional stability, which are essential for epitaxial growth and device fabrication processes.<\/p>\n

\u0110\u1eb7c t\u00ednh v\u1eadt li\u1ec7u<\/h2>\n

Silicon carbide demonstrates a wide bandgap of approximately 3.26 eV, which allows devices to operate at significantly higher voltages compared to silicon. This results in improved power handling capability and reduced conduction losses.\"\"<\/p>\n

Another important property is its high breakdown electric field, which can be nearly ten times greater than that of silicon. This enables thinner device structures and higher efficiency in power conversion systems.<\/p>\n

Thermal conductivity is also a key advantage. SiC conducts heat about three times more effectively than silicon, allowing devices to maintain stable performance under high load conditions. This reduces the need for complex cooling systems and improves overall system reliability.<\/p>\n

In addition, silicon carbide maintains stable electrical characteristics at temperatures exceeding 600\u00b0C. This makes it particularly suitable for applications in harsh environments such as automotive power systems, industrial drives, and aerospace electronics.<\/p>\n

The material also offers high electron mobility and low on-resistance, contributing to faster switching speeds and reduced energy loss in power devices.<\/p>\n

Available Wafer Sizes<\/h2>\n

Silicon carbide wafers are available in multiple diameters to meet different application needs:<\/p>\n

\n
\n\n\n\n\n\n\n\n\n\n
Size<\/th>\n\u0110\u01b0\u1eddng k\u00ednh<\/th>\nPh\u1ea1m vi \u0111\u1ed9 d\u00e0y<\/th>\n<\/tr>\n<\/thead>\n
2 inch<\/td>\n50.8 mm<\/td>\n330\u2013350 \u03bcm<\/td>\n<\/tr>\n
3 inch<\/td>\n76.2 mm<\/td>\n350\u2013500 \u03bcm<\/td>\n<\/tr>\n
4 inch<\/td>\n100 mm<\/td>\n350\u2013500 \u03bcm<\/td>\n<\/tr>\n
6 inch<\/td>\n150 mm<\/td>\n350\u2013500 \u03bcm<\/td>\n<\/tr>\n
8 inch<\/td>\n200 mm<\/td>\n350\u2013500 \u03bcm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Common types include conductive 4H-N, semi-insulating HPSI, and other specialized variants for RF and power applications.<\/p>\n

\u1ee8ng d\u1ee5ng<\/h2>\n

In electric vehicles, SiC wafers are used in traction inverters, onboard chargers, and DC-DC converters. They improve energy efficiency, reduce heat generation, and enable more compact system designs.\"\"<\/p>\n

In renewable energy systems, SiC devices are applied in solar inverters and wind power converters. Their high efficiency contributes to reduced energy loss and improved system performance.<\/p>\n

Industrial systems also benefit from SiC technology, especially in high-power motor drives and automation equipment where reliability and durability are critical.<\/p>\n

In power grid infrastructure, silicon carbide is used in smart grid systems and high-voltage transmission equipment to enhance energy conversion efficiency and reduce system losses.<\/p>\n

Aerospace and defense applications utilize SiC for high-reliability electronics that must operate under extreme temperature and environmental conditions.<\/p>\n

So s\u00e1nh gi\u1eefa Si v\u00e0 SiC<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n
B\u1ea5t \u0111\u1ed9ng s\u1ea3n<\/th>\nSilic<\/th>\nCacbua silic<\/th>\n<\/tr>\n<\/thead>\n
Kho\u1ea3ng c\u00e1ch n\u0103ng l\u01b0\u1ee3ng<\/td>\n1,12 eV<\/td>\n3.26 eV<\/td>\n<\/tr>\n
Breakdown Field<\/td>\nTh\u1ea5p<\/td>\nCao<\/td>\n<\/tr>\n
\u0110\u1ed9 d\u1eabn nhi\u1ec7t<\/td>\nTrung b\u00ecnh<\/td>\nCao<\/td>\n<\/tr>\n
Max Temperature<\/td>\n~150\u00b0C<\/td>\n>600\u00b0C<\/td>\n<\/tr>\n
Hi\u1ec7u qu\u1ea3<\/td>\nStandard<\/td>\nCao<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Silicon remains suitable for low-power and conventional electronics, while silicon carbide is increasingly preferred for high-power, high-efficiency systems.<\/p>\n

C\u00e2u h\u1ecfi th\u01b0\u1eddng g\u1eb7p<\/h2>\n

Q: What is the difference between silicon and silicon carbide wafers?<\/strong>
T\u1ea5m silicon \u0111\u01b0\u1ee3c s\u1eed d\u1ee5ng r\u1ed9ng r\u00e3i trong c\u00e1c m\u1ea1ch t\u00edch h\u1ee3p v\u00e0 c\u00e1c thi\u1ebft b\u1ecb \u0111i\u1ec7n t\u1eed ti\u00eau chu\u1ea9n. T\u1ea5m cacbua silic \u0111\u01b0\u1ee3c thi\u1ebft k\u1ebf d\u00e0nh cho l\u0129nh v\u1ef1c \u0111i\u1ec7n t\u1eed c\u00f4ng su\u1ea5t, n\u01a1i \u0111\u00f2i h\u1ecfi \u0111i\u1ec7n \u00e1p cao, nhi\u1ec7t \u0111\u1ed9 cao v\u00e0 hi\u1ec7u su\u1ea5t cao.<\/p>\n

C\u00e2u h\u1ecfi: SiC c\u00f3 nh\u1eefng \u0111i\u1ec3m kh\u00e1c bi\u1ec7t g\u00ec so v\u1edbi GaN?<\/strong>
SiC th\u01b0\u1eddng \u0111\u01b0\u1ee3c s\u1eed d\u1ee5ng trong c\u00e1c \u1ee9ng d\u1ee5ng \u0111i\u1ec7n \u00e1p cao v\u00e0 c\u00f4ng su\u1ea5t l\u1edbn nh\u01b0 xe \u0111i\u1ec7n v\u00e0 l\u01b0\u1edbi \u0111i\u1ec7n. GaN ph\u00f9 h\u1ee3p h\u01a1n cho c\u00e1c \u1ee9ng d\u1ee5ng t\u1ea7n s\u1ed1 cao v\u00e0 \u0111i\u1ec7n \u00e1p th\u1ea5p, bao g\u1ed3m c\u00e1c h\u1ec7 th\u1ed1ng t\u1ea7n s\u1ed1 v\u00f4 tuy\u1ebfn (RF) v\u00e0 thi\u1ebft b\u1ecb s\u1ea1c nhanh.<\/p>\n

H\u1ecfi: Cacbua silic l\u00e0 g\u1ed1m hay ch\u1ea5t b\u00e1n d\u1eabn?<\/strong>
Cacbua silic v\u1eeba l\u00e0 v\u1eadt li\u1ec7u g\u1ed1m v\u1eeba l\u00e0 ch\u1ea5t b\u00e1n d\u1eabn. V\u1eadt li\u1ec7u n\u00e0y k\u1ebft h\u1ee3p \u0111\u1ed9 b\u1ec1n c\u01a1 h\u1ecdc cao v\u1edbi c\u00e1c t\u00ednh ch\u1ea5t \u0111i\u1ec7n tuy\u1ec7t v\u1eddi, khi\u1ebfn n\u00f3 tr\u1edf n\u00ean ph\u00f9 h\u1ee3p cho c\u00e1c \u1ee9ng d\u1ee5ng \u0111i\u1ec7n t\u1eed \u0111\u00f2i h\u1ecfi kh\u1eaft khe.<\/p>\n

","protected":false},"excerpt":{"rendered":"

The 4 inch 4H-N silicon carbide wafer is a key material for modern power electronics. Its combination of electrical efficiency, thermal performance, and reliability makes it an essential substrate for next-generation devices. As industries continue to demand higher energy efficiency and system performance, SiC wafers are becoming increasingly important in both commercial and industrial applications.<\/p>","protected":false},"featured_media":2168,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}}},"product_brand":[],"product_cat":[729],"product_tag":[930,929,935,931,932,934,933,928,927,692],"class_list":{"0":"post-2167","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-wafer","7":"product_tag-4-inch-sic-wafer","8":"product_tag-4h-n-sic","9":"product_tag-ev-power-electronics-material","10":"product_tag-n-type-sic-wafer","11":"product_tag-power-semiconductor-material","12":"product_tag-schottky-diode-substrate","13":"product_tag-sic-mosfet-wafer","14":"product_tag-sic-substrate","15":"product_tag-silicon-carbide-wafer","16":"product_tag-wide-bandgap-semiconductor","17":"desktop-align-left","18":"tablet-align-left","19":"mobile-align-left","20":"ast-product-gallery-layout-horizontal-slider","21":"ast-product-tabs-layout-horizontal","23":"first","24":"instock","25":"shipping-taxable","26":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/product\/2167","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/comments?post=2167"}],"version-history":[{"count":1,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/product\/2167\/revisions"}],"predecessor-version":[{"id":2172,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/product\/2167\/revisions\/2172"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/media\/2168"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/media?parent=2167"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/product_brand?post=2167"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/product_cat?post=2167"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/product_tag?post=2167"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}