{"id":2077,"date":"2026-04-03T02:07:51","date_gmt":"2026-04-03T02:07:51","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2077"},"modified":"2026-04-03T02:09:04","modified_gmt":"2026-04-03T02:09:04","slug":"integrated-vertical-airflow-sic-epitaxy-equipment-for-6-8-epi-wafers","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/vi\/product\/integrated-vertical-airflow-sic-epitaxy-equipment-for-6-8-epi-wafers\/","title":{"rendered":"Integrated Vertical Airflow SiC Epitaxy Equipment for 6\u201d\/8\u201d Epi-Wafers"},"content":{"rendered":"<p data-start=\"187\" data-end=\"641\"><img fetchpriority=\"high\" decoding=\"async\" class=\"size-medium wp-image-2079 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>The Integrated Vertical Airflow Silicon Carbide (SiC) Epitaxy Equipment is an advanced epitaxial growth system engineered for high-efficiency production of 6-inch and 8-inch SiC epi-wafers. Designed to meet the growing demands of power semiconductor manufacturing, this system integrates precise thermal control, optimized gas flow dynamics, and intelligent automation to deliver exceptional performance in uniformity, throughput, and defect control.<\/p>\n<p data-start=\"643\" data-end=\"982\">At the core of the system is an innovative vertical airflow showerhead design, which enables uniform distribution of process gases across the wafer surface. Combined with multi-zone temperature field control, it ensures excellent thickness uniformity and stable doping concentration\u2014critical for high-performance SiC power devices.<\/p>\n<p data-start=\"984\" data-end=\"1310\">The system adopts a highly integrated structure with automated wafer handling via an EFEM system, along with a high-temperature wafer transfer mechanism. This enables seamless integration into modern semiconductor fabrication lines, reduces manual intervention, and improves process consistency and operational efficiency.<\/p>\n<p data-start=\"1312\" data-end=\"1615\">To support industrial-scale manufacturing, the equipment features a dual-chamber configuration capable of continuous multi-furnace operation. With a throughput of over 1100 wafers per month\u2014and up to 1200 wafers through process optimization\u2014it is well suited for high-volume production environments.<\/p>\n<p data-start=\"1617\" data-end=\"1971\">The equipment is compatible with both 6-inch and 8-inch SiC wafers, offering flexibility for manufacturers transitioning toward larger wafer sizes. It also demonstrates excellent capability in thick epitaxial layer growth and trench-filling epitaxy, making it particularly suitable for advanced high-voltage and high-power device fabrication.<\/p>\n<p data-start=\"1973\" data-end=\"2214\">In addition, the optimized reactor design ensures low defect density, improved yield, and reduced cost of ownership. Its robust construction and maintenance-friendly design further enhance long-term reliability and operational stability.<\/p>\n<h2 data-section-id=\"qpn8c9\" data-start=\"2221\" data-end=\"2252\"><span role=\"text\"><img decoding=\"async\" class=\"size-medium wp-image-2078 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow2-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow2-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow2-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow2-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow2-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow2-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow2-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Integrated-Silicon-Carbide-Epitaxy-Equipment-with-Vertical-Airflow2.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>\u01afu \u0111i\u1ec3m k\u1ef9 thu\u1eadt ch\u00ednh<\/span><\/h2>\n<ul data-start=\"2254\" data-end=\"2704\">\n<li data-section-id=\"1q2t12k\" data-start=\"2254\" data-end=\"2321\">Vertical airflow showerhead design for uniform gas distribution<\/li>\n<li data-section-id=\"1lzu0dd\" data-start=\"2322\" data-end=\"2387\">Multi-zone temperature control for precise thermal management<\/li>\n<li data-section-id=\"1emeqzr\" data-start=\"2388\" data-end=\"2449\">Dual-chamber configuration for high throughput production<\/li>\n<li data-section-id=\"rs6yfl\" data-start=\"2450\" data-end=\"2499\">Low defect density and high yield performance<\/li>\n<li data-section-id=\"h9m4ox\" data-start=\"2500\" data-end=\"2550\">Automated wafer handling with EFEM integration<\/li>\n<li data-section-id=\"bze71o\" data-start=\"2551\" data-end=\"2594\">Compatibility with 6\u201d and 8\u201d SiC wafers<\/li>\n<li data-section-id=\"xhhop\" data-start=\"2595\" data-end=\"2655\">Optimized for thick epitaxy and trench-filling processes<\/li>\n<li data-section-id=\"1a3549x\" data-start=\"2656\" data-end=\"2704\">High reliability with simplified maintenance<\/li>\n<\/ul>\n<h2 data-section-id=\"ca04ra\" data-start=\"2711\" data-end=\"2737\"><span role=\"text\">Process Performance<\/span><\/h2>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"2739\" data-end=\"3287\">\n<thead data-start=\"2739\" data-end=\"2768\">\n<tr data-start=\"2739\" data-end=\"2768\">\n<th class=\"\" data-start=\"2739\" data-end=\"2751\" data-col-size=\"sm\">Tham s\u1ed1<\/th>\n<th class=\"\" data-start=\"2751\" data-end=\"2768\" data-col-size=\"md\">Th\u00f4ng s\u1ed1 k\u1ef9 thu\u1eadt<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"2796\" data-end=\"3287\">\n<tr data-start=\"2796\" data-end=\"2884\">\n<td data-start=\"2796\" data-end=\"2809\" data-col-size=\"sm\">Throughput<\/td>\n<td data-start=\"2809\" data-end=\"2884\" data-col-size=\"md\">\u22651100 wafers\/month (dual chambers), up to 1200 wafers\/month (optimized)<\/td>\n<\/tr>\n<tr data-start=\"2885\" data-end=\"2938\">\n<td data-start=\"2885\" data-end=\"2912\" data-col-size=\"sm\">Wafer Size Compatibility<\/td>\n<td data-col-size=\"md\" data-start=\"2912\" data-end=\"2938\">6\u201d \/ 8\u201d SiC epi-wafers<\/td>\n<\/tr>\n<tr data-start=\"2939\" data-end=\"2975\">\n<td data-start=\"2939\" data-end=\"2961\" data-col-size=\"sm\">Ki\u1ec3m so\u00e1t nhi\u1ec7t \u0111\u1ed9<\/td>\n<td data-start=\"2961\" data-end=\"2975\" data-col-size=\"md\">Multi-zone<\/td>\n<\/tr>\n<tr data-start=\"2976\" data-end=\"3035\">\n<td data-start=\"2976\" data-end=\"2993\" data-col-size=\"sm\">Airflow System<\/td>\n<td data-start=\"2993\" data-end=\"3035\" data-col-size=\"md\">Vertical adjustable multi-zone airflow<\/td>\n<\/tr>\n<tr data-start=\"3036\" data-end=\"3067\">\n<td data-start=\"3036\" data-end=\"3053\" data-col-size=\"sm\">T\u1ed1c \u0111\u1ed9 quay<\/td>\n<td data-start=\"3053\" data-end=\"3067\" data-col-size=\"md\">0\u20131000 rpm<\/td>\n<\/tr>\n<tr data-start=\"3068\" data-end=\"3101\">\n<td data-start=\"3068\" data-end=\"3086\" data-col-size=\"sm\">Max Growth Rate<\/td>\n<td data-start=\"3086\" data-end=\"3101\" data-col-size=\"md\">\u226560 \u03bcm\/hour<\/td>\n<\/tr>\n<tr data-start=\"3102\" data-end=\"3163\">\n<td data-start=\"3102\" data-end=\"3125\" data-col-size=\"sm\">Thickness Uniformity<\/td>\n<td data-col-size=\"md\" data-start=\"3125\" data-end=\"3163\">\u22642% (optimized \u22641%, \u03c3\/avg, EE 5mm)<\/td>\n<\/tr>\n<tr data-start=\"3164\" data-end=\"3224\">\n<td data-start=\"3164\" data-end=\"3184\" data-col-size=\"sm\">Doping Uniformity<\/td>\n<td data-col-size=\"md\" data-start=\"3184\" data-end=\"3224\">\u22643% (optimized \u22641.5%, \u03c3\/avg, EE 5mm)<\/td>\n<\/tr>\n<tr data-start=\"3225\" data-end=\"3287\">\n<td data-start=\"3225\" data-end=\"3249\" data-col-size=\"sm\">Killer Defect Density<\/td>\n<td data-col-size=\"md\" data-start=\"3249\" data-end=\"3287\">\u22640.2 cm\u207b\u00b2 (optimized to 0.01 cm\u207b\u00b2)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<h2 data-section-id=\"1w46w82\" data-start=\"3294\" data-end=\"3322\"><span role=\"text\">Application Scenarios<\/span><\/h2>\n<p data-start=\"3324\" data-end=\"3514\">This equipment is widely used in the production of advanced SiC-based semiconductor devices, particularly in industries requiring high efficiency, high voltage, and high thermal performance:<\/p>\n<ul data-start=\"3516\" data-end=\"4364\">\n<li data-section-id=\"qrtaas\" data-start=\"3516\" data-end=\"3707\">Electric Vehicles (EVs)<br data-start=\"3545\" data-end=\"3548\" \/>Used in the production of SiC MOSFETs and power modules for inverters, onboard chargers, and DC-DC converters, improving energy efficiency and driving range.<\/li>\n<li data-section-id=\"1j97evh\" data-start=\"3709\" data-end=\"3867\">Renewable Energy Systems<br data-start=\"3739\" data-end=\"3742\" \/>Applied in photovoltaic inverters and energy storage systems, enabling higher conversion efficiency and system reliability.<\/li>\n<li data-section-id=\"8pfhmh\" data-start=\"3869\" data-end=\"4041\">Industrial Power Electronics<br data-start=\"3903\" data-end=\"3906\" \/>Suitable for high-power motor drives, industrial automation systems, and power supply units requiring stable and efficient operation.<\/li>\n<li data-section-id=\"frfj8s\" data-start=\"4043\" data-end=\"4206\">Rail Transit &amp; Power Grids<br data-start=\"4075\" data-end=\"4078\" \/>Supports high-voltage and high-frequency devices used in smart grids, traction systems, and power transmission infrastructure.<\/li>\n<li data-section-id=\"1k6eb43\" data-start=\"4208\" data-end=\"4364\">High-End Power Devices<br data-start=\"4236\" data-end=\"4239\" \/>Ideal for manufacturing advanced SiC devices such as Schottky diodes, MOSFETs, and next-generation high-voltage components.<\/li>\n<\/ul>\n<p><img decoding=\"async\" class=\"wp-image-2080 size-large aligncenter\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application-1024x578.png\" alt=\"\" width=\"1024\" height=\"578\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application-1024x578.png 1024w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application-300x169.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application-768x433.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application-18x10.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application-600x339.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application.png 1285w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/><\/p>\n<h2 data-section-id=\"elc90z\" data-start=\"4371\" data-end=\"4381\"><span role=\"text\">C\u00e2u h\u1ecfi th\u01b0\u1eddng g\u1eb7p<\/span><\/h2>\n<h3 data-section-id=\"1f731tm\" data-start=\"4383\" data-end=\"4453\"><span role=\"text\">1. What wafer sizes are supported by this epitaxy equipment?<\/span><\/h3>\n<p data-start=\"4454\" data-end=\"4606\">The system supports both 6-inch and 8-inch SiC wafers, allowing manufacturers to meet current production demands while preparing for future scaling.<\/p>\n<h3 data-section-id=\"8a4v60\" data-start=\"4613\" data-end=\"4683\"><span role=\"text\">2. What advantages does the vertical airflow design provide?<\/span><\/h3>\n<p data-start=\"4684\" data-end=\"4858\">The vertical airflow system ensures uniform gas distribution across the wafer, improving thickness consistency, reducing defects, and enhancing overall epitaxial quality.<\/p>\n<h3 data-section-id=\"1rbmoqb\" data-start=\"4865\" data-end=\"4935\"><span role=\"text\">3. Is this equipment suitable for high-volume manufacturing?<\/span><\/h3>\n<p data-start=\"4936\" data-end=\"5110\">Yes, the system features a dual-chamber configuration and continuous operation mode, with a monthly throughput exceeding 1100 wafers. It is well-suited for stable, large-scale industrial production, ensuring consistent output, high yield stability, and long-term operational efficiency.<\/p>","protected":false},"excerpt":{"rendered":"<p>The Integrated Vertical Airflow Silicon Carbide (SiC) Epitaxy Equipment is an advanced epitaxial growth system engineered for high-efficiency production of 6-inch and 8-inch SiC epi-wafers.<\/p>","protected":false},"featured_media":2078,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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