{"id":1930,"date":"2026-03-20T05:44:51","date_gmt":"2026-03-20T05:44:51","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?p=1930"},"modified":"2026-03-20T05:44:59","modified_gmt":"2026-03-20T05:44:59","slug":"next-generation-semiconductor-processing-equipment-trends-in-sic-gan-and-composite-materials","status":"publish","type":"post","link":"https:\/\/www.zmsh-semitech.com\/vi\/next-generation-semiconductor-processing-equipment-trends-in-sic-gan-and-composite-materials\/","title":{"rendered":"Thi\u1ebft b\u1ecb ch\u1ebf t\u1ea1o b\u00e1n d\u1eabn th\u1ebf h\u1ec7 m\u1edbi: Xu h\u01b0\u1edbng trong l\u0129nh v\u1ef1c SiC, GaN v\u00e0 v\u1eadt li\u1ec7u composite"},"content":{"rendered":"

1. Gi\u1edbi thi\u1ec7u<\/h3>\n\n\n\n

V\u1edbi s\u1ef1 ph\u00e1t tri\u1ec3n nhanh ch\u00f3ng c\u1ee7a xe \u0111i\u1ec7n, n\u0103ng l\u01b0\u1ee3ng t\u00e1i t\u1ea1o, truy\u1ec1n th\u00f4ng 5G v\u00e0 \u0111i\u1ec7n to\u00e1n hi\u1ec7u su\u1ea5t cao, c\u00e1c ch\u1ea5t b\u00e1n d\u1eabn truy\u1ec1n th\u1ed1ng d\u1ef1a tr\u00ean silicon ng\u00e0y c\u00e0ng b\u1ed9c l\u1ed9 nh\u1eefng h\u1ea1n ch\u1ebf trong c\u00e1c m\u00f4i tr\u01b0\u1eddng c\u00f4ng su\u1ea5t cao, t\u1ea7n s\u1ed1 cao v\u00e0 nhi\u1ec7t \u0111\u1ed9 cao. Cacbua silic (SiC) v\u00e0 nitrua gali (GaN), l\u00e0 c\u00e1c v\u1eadt li\u1ec7u b\u00e1n d\u1eabn c\u00f3 kho\u1ea3ng c\u00e1ch d\u1ea3i n\u0103ng l\u01b0\u1ee3ng r\u1ed9ng, cung c\u1ea5p \u0111i\u1ec7n \u00e1p \u0111\u1ee9t cao, \u0111\u1ed9 d\u1eabn nhi\u1ec7t tuy\u1ec7t v\u1eddi v\u00e0 hi\u1ec7u su\u1ea5t t\u1ea7n s\u1ed1 cao v\u01b0\u1ee3t tr\u1ed9i, khi\u1ebfn ch\u00fang tr\u1edf th\u00e0nh v\u1eadt li\u1ec7u c\u1ed1t l\u00f5i cho c\u00e1c thi\u1ebft b\u1ecb b\u00e1n d\u1eabn th\u1ebf h\u1ec7 ti\u1ebfp theo.<\/p>\n\n\n\n

C\u00f9ng v\u1edbi nh\u1eefng ti\u1ebfn b\u1ed9 v\u1ec1 v\u1eadt li\u1ec7u, thi\u1ebft b\u1ecb ch\u1ebf t\u1ea1o b\u00e1n d\u1eabn c\u0169ng \u0111ang kh\u00f4ng ng\u1eebng ph\u00e1t tri\u1ec3n \u0111\u1ec3 \u0111\u00e1p \u1ee9ng nh\u1eefng th\u00e1ch th\u1ee9c t\u1eeb c\u00e1c lo\u1ea1i v\u1eadt li\u1ec7u m\u1edbi n\u00e0y. B\u00e0i vi\u1ebft n\u00e0y cung c\u1ea5p c\u00e1i nh\u00ecn t\u1ed5ng quan v\u1ec1 m\u1eb7t khoa h\u1ecdc v\u1ec1 c\u00e1c xu h\u01b0\u1edbng, \u0111\u1eb7c \u0111i\u1ec3m ch\u00ednh v\u00e0 \u0111\u1ecbnh h\u01b0\u1edbng t\u01b0\u01a1ng lai c\u1ee7a thi\u1ebft b\u1ecb ch\u1ebf t\u1ea1o b\u00e1n d\u1eabn th\u1ebf h\u1ec7 m\u1edbi.<\/p>\n\n\n\n

\"\"<\/figure>\n\n\n\n

2. Thi\u1ebft b\u1ecb gia c\u00f4ng t\u1ea5m wafer SiC<\/h3>\n\n\n\n

T\u1ea5m wafer SiC c\u00f3 \u0111\u1ed9 c\u1ee9ng c\u1ef1c cao, d\u1eabn nhi\u1ec7t t\u1ed1t v\u00e0 d\u1ec5 v\u1ee1, do \u0111\u00f3 \u0111\u1eb7t ra nh\u1eefng y\u00eau c\u1ea7u kh\u1eaft khe \u0111\u1ed1i v\u1edbi thi\u1ebft b\u1ecb gia c\u00f4ng. C\u00e1c thi\u1ebft b\u1ecb \u0111i\u1ec3n h\u00ecnh d\u00f9ng trong s\u1ea3n xu\u1ea5t t\u1ea5m wafer SiC bao g\u1ed3m:<\/p>\n\n\n\n

    \n
  1. L\u00f2 nung nhi\u1ec7t \u0111\u1ed9 cao \u00e1p su\u1ea5t cao (PVT)<\/strong> \u2013 \u0111\u1ec3 s\u1ea3n xu\u1ea5t c\u00e1c th\u1ecfi SiC \u0111\u01a1n tinh th\u1ec3 ch\u1ea5t l\u01b0\u1ee3ng cao.<\/li>\n\n\n\n
  2. M\u00e1y c\u01b0a d\u00e2y ch\u00ednh x\u00e1c<\/mark><\/a><\/strong> \u2013 s\u1eed d\u1ee5ng d\u00e2y kim c\u01b0\u01a1ng ho\u1eb7c c\u1eaft laser \u0111\u1ec3 \u0111\u1ea3m b\u1ea3o \u0111\u1ed9 d\u00e0y v\u00e0 \u0111\u1ed9 ch\u00ednh x\u00e1c v\u1ec1 k\u00edch th\u01b0\u1edbc c\u1ee7a t\u1ea5m wafer.<\/li>\n\n\n\n
  3. Thi\u1ebft b\u1ecb \u0111\u00e1nh b\u00f3ng h\u00f3a h\u1ecdc c\u01a1 h\u1ecdc (CMP)<\/strong> \u2013 \u0111\u1ec3 l\u00e0m ph\u1eb3ng b\u1ec1 m\u1eb7t t\u1ea5m wafer, gi\u1ea3m thi\u1ec3u khuy\u1ebft t\u1eadt v\u00e0 \u0111\u1ed9 nh\u00e1m b\u1ec1 m\u1eb7t.<\/li>\n\n\n\n
  4. H\u1ec7 th\u1ed1ng kh\u1eafc v\u00e0 \u0111\u00e1nh d\u1ea5u b\u1eb1ng laser<\/strong> \u2013 d\u00f9ng trong ch\u1ebf t\u1ea1o vi m\u1ea1ch cho c\u00e1c thi\u1ebft b\u1ecb \u0111i\u1ec7n v\u00e0 \u1ee9ng d\u1ee5ng quang \u0111i\u1ec7n t\u1eed.<\/li>\n<\/ol>\n\n\n\n

    Khi c\u00e1c thi\u1ebft b\u1ecb SiC ng\u00e0y c\u00e0ng chuy\u1ec3n sang s\u1eed d\u1ee5ng c\u00e1c t\u1ea5m wafer c\u00f3 \u0111\u01b0\u1eddng k\u00ednh l\u1edbn h\u01a1n (v\u00ed d\u1ee5: 200mm v\u00e0 300mm), c\u00e1c h\u1ec7 th\u1ed1ng c\u1eaft, m\u00e0i v\u00e0 x\u1eed l\u00fd t\u1ea5m wafer t\u1ef1 \u0111\u1ed9ng v\u1edbi \u0111\u1ed9 ch\u00ednh x\u00e1c cao \u0111ang tr\u1edf th\u00e0nh \u01b0u ti\u00ean h\u00e0ng \u0111\u1ea7u c\u1ee7a ng\u00e0nh.<\/p>\n\n\n\n

    3. Thi\u1ebft b\u1ecb ch\u1ebf t\u1ea1o ch\u1ea5t b\u00e1n d\u1eabn GaN<\/h3>\n\n\n\n

    Nitrua gali (GaN) ch\u1ee7 y\u1ebfu \u0111\u01b0\u1ee3c s\u1eed d\u1ee5ng trong c\u00e1c thi\u1ebft b\u1ecb t\u1ea7n s\u1ed1 v\u00f4 tuy\u1ebfn (RF) t\u1ea7n s\u1ed1 cao v\u00e0 \u0111i\u1ec7n t\u1eed c\u00f4ng su\u1ea5t. C\u00e1c t\u1ea5m wafer GaN th\u01b0\u1eddng \u0111\u01b0\u1ee3c nu\u00f4i c\u1ea5y tr\u00ean n\u1ec1n silicon ho\u1eb7c sapphire, do \u0111\u00f3 thi\u1ebft b\u1ecb gia c\u00f4ng ph\u1ea3i t\u01b0\u01a1ng th\u00edch v\u1edbi c\u00e1c n\u1ec1n v\u1eadt li\u1ec7u kh\u00e1c nhau:<\/p>\n\n\n\n

      \n
    • H\u1ec7 th\u1ed1ng MOCVD (Ph\u01b0\u01a1ng ph\u00e1p l\u1eafng \u0111\u1ecdng h\u00f3a h\u1ecdc t\u1eeb pha h\u01a1i kim lo\u1ea1i-h\u1eefu c\u01a1)<\/strong> \u2013 thi\u1ebft b\u1ecb ch\u1ee7 ch\u1ed1t \u0111\u1ec3 ph\u00e1t tri\u1ec3n m\u00e0ng m\u1ecfng GaN, gi\u00fap ki\u1ec3m so\u00e1t \u0111\u1ed9 d\u00e0y v\u00e0 \u0111\u1ed9 ch\u00ednh x\u00e1c c\u1ee7a qu\u00e1 tr\u00ecnh pha t\u1ea1p.<\/li>\n\n\n\n
    • M\u00e1y kh\u1eafc kh\u00f4 ICP<\/strong> \u2013 \u0111\u1ec3 t\u1ea1o h\u00ecnh c\u1ea5u tr\u00fac vi m\u00f4 v\u1edbi t\u1ef7 l\u1ec7 chi\u1ec1u cao tr\u00ean chi\u1ec1u r\u1ed9ng cao v\u00e0 c\u00e1c m\u1eb7t b\u00ean nh\u1eb5n m\u1ecbn.<\/li>\n\n\n\n
    • H\u1ec7 th\u1ed1ng x\u1eed l\u00fd t\u1ea5m wafer t\u1ef1 \u0111\u1ed9ng<\/strong> \u2013 gi\u1ea3m t\u1ef7 l\u1ec7 v\u1ee1 v\u00e0 n\u00e2ng cao hi\u1ec7u su\u1ea5t cho c\u00e1c t\u1ea5m wafer GaN d\u1ec5 v\u1ee1.<\/li>\n<\/ul>\n\n\n\n

      Xu h\u01b0\u1edbng trong l\u0129nh v\u1ef1c thi\u1ebft b\u1ecb GaN t\u1eadp trung v\u00e0o s\u1ea3n xu\u1ea5t theo l\u00f4 nh\u1ecf v\u1edbi \u0111\u1ed9 ch\u00ednh x\u00e1c cao, t\u1ef7 l\u1ec7 l\u1ed7i th\u1ea5p v\u00e0 kh\u1ea3 n\u0103ng t\u01b0\u01a1ng th\u00edch v\u1edbi nhi\u1ec1u lo\u1ea1i ch\u1ea5t n\u1ec1n, nh\u1eb1m \u0111\u00e1p \u1ee9ng nhu c\u1ea7u c\u1ee7a c\u00e1c tr\u1ea1m ph\u00e1t s\u00f3ng 5G v\u00e0 c\u00e1c \u1ee9ng d\u1ee5ng s\u1ea1c nhanh cho xe \u0111i\u1ec7n.<\/p>\n\n\n\n

      4. V\u1eadt li\u1ec7u composite v\u00e0 thi\u1ebft b\u1ecb th\u1ebf h\u1ec7 m\u1edbi<\/h3>\n\n\n\n

      Ngo\u00e0i SiC v\u00e0 GaN, v\u1eadt li\u1ec7u b\u00e1n d\u1eabn t\u1ed5ng h\u1ee3p<\/strong> (v\u00ed d\u1ee5: c\u00e1c thi\u1ebft b\u1ecb lai SiC\/GaN, c\u1ea5u tr\u00fac d\u1ecb ch\u1ea5t nhi\u1ec1u l\u1edbp) \u0111ang d\u1ea7n xu\u1ea5t hi\u1ec7n. C\u00e1c v\u1eadt li\u1ec7u composite \u0111\u1eb7t ra nh\u1eefng th\u00e1ch th\u1ee9c m\u1edbi \u0111\u1ed1i v\u1edbi thi\u1ebft b\u1ecb:<\/p>\n\n\n\n

        \n
      1. Kh\u1ea3 n\u0103ng t\u01b0\u01a1ng th\u00edch v\u1edbi nhi\u1ec1u lo\u1ea1i v\u1eadt li\u1ec7u<\/strong> \u2013 Thi\u1ebft b\u1ecb ph\u1ea3i c\u00f3 kh\u1ea3 n\u0103ng x\u1eed l\u00fd c\u00e1c v\u1eadt li\u1ec7u c\u00f3 \u0111\u1ed9 c\u1ee9ng v\u00e0 h\u1ec7 s\u1ed1 gi\u00e3n n\u1edf nhi\u1ec7t kh\u00e1c nhau trong c\u00f9ng m\u1ed9t quy tr\u00ecnh l\u00e0m vi\u1ec7c.<\/li>\n\n\n\n
      2. C\u0103n ch\u1ec9nh v\u00e0 \u0111\u00f3ng g\u00f3i v\u1edbi \u0111\u1ed9 ch\u00ednh x\u00e1c cao<\/strong> \u2013 S\u1ef1 s\u1eafp x\u1ebfp \u1edf c\u1ea5p \u0111\u1ed9 nano l\u00e0 y\u1ebfu t\u1ed1 then ch\u1ed1t \u0111\u1ed1i v\u1edbi vi\u1ec7c t\u00edch h\u1ee3p d\u1ecb ch\u1ea5t.<\/li>\n\n\n\n
      3. Gi\u00e1m s\u00e1t v\u00e0 \u0111i\u1ec1u khi\u1ec3n n\u00e2ng cao<\/strong> \u2013 Ki\u1ec3m tra tr\u1ef1c tuy\u1ebfn, nh\u1eadn di\u1ec7n h\u00ecnh \u1ea3nh b\u1eb1ng tr\u00ed tu\u1ec7 nh\u00e2n t\u1ea1o (AI) v\u00e0 ki\u1ec3m so\u00e1t nhi\u1ec7t \u0111\u1ed9 \u0111\u1ea3m b\u1ea3o s\u1ef1 \u1ed5n \u0111\u1ecbnh c\u1ee7a quy tr\u00ecnh.<\/li>\n<\/ol>\n\n\n\n

        Nh\u1eefng y\u00eau c\u1ea7u n\u00e0y \u0111ang th\u00fac \u0111\u1ea9y s\u1ef1 ph\u00e1t tri\u1ec3n thi\u1ebft b\u1ecb theo h\u01b0\u1edbng c\u00e1c thi\u1ebft k\u1ebf m\u00f4-\u0111un, th\u00f4ng minh v\u00e0 t\u01b0\u01a1ng th\u00edch v\u1edbi v\u1eadt li\u1ec7u composite.<\/p>\n\n\n\n

        5. T\u1ef1 \u0111\u1ed9ng h\u00f3a v\u00e0 thi\u1ebft b\u1ecb th\u00f4ng minh<\/h3>\n\n\n\n

        S\u1ef1 ph\u00e1t tri\u1ec3n c\u1ee7a thi\u1ebft b\u1ecb b\u00e1n d\u1eabn trong t\u01b0\u01a1ng lai t\u1eadp trung v\u00e0o t\u1ef1 \u0111\u1ed9ng h\u00f3a v\u00e0 tr\u00ed tu\u1ec7 nh\u00e2n t\u1ea1o:<\/p>\n\n\n\n

          \n
        • T\u00edch h\u1ee3p C\u00f4ng nghi\u1ec7p 4.0<\/strong> \u2013 Vi\u1ec7c gi\u00e1m s\u00e1t theo th\u1eddi gian th\u1ef1c c\u00e1c t\u1ea5m wafer v\u00e0 c\u00e1c th\u00f4ng s\u1ed1 x\u1eed l\u00fd gi\u00fap t\u1ed1i \u01b0u h\u00f3a d\u1ef1a tr\u00ean d\u1eef li\u1ec7u.<\/li>\n\n\n\n
        • \u0110i\u1ec1u khi\u1ec3n c\u00f3 s\u1ef1 h\u1ed7 tr\u1ee3 c\u1ee7a tr\u00ed tu\u1ec7 nh\u00e2n t\u1ea1o<\/strong> \u2013 H\u1ecdc m\u00e1y t\u1ed1i \u01b0u h\u00f3a \u0111\u01b0\u1eddng c\u1eaft, \u00e1p l\u1ef1c \u0111\u00e1nh b\u00f3ng v\u00e0 c\u00e1c th\u00f4ng s\u1ed1 l\u1eafng \u0111\u1ecdng, t\u1eeb \u0111\u00f3 n\u00e2ng cao hi\u1ec7u su\u1ea5t s\u1ea3n xu\u1ea5t.<\/li>\n\n\n\n
        • H\u1ec7 th\u1ed1ng x\u1eed l\u00fd b\u1eb1ng robot<\/strong> \u2013 gi\u1ea3m thi\u1ec3u s\u1ef1 can thi\u1ec7p th\u1ee7 c\u00f4ng, n\u00e2ng cao \u0111\u1ed9 an to\u00e0n v\u00e0 \u0111\u1ea3m b\u1ea3o t\u00ednh l\u1eb7p l\u1ea1i, \u0111\u1eb7c bi\u1ec7t \u0111\u1ed1i v\u1edbi c\u00e1c t\u1ea5m wafer SiC v\u00e0 GaN d\u1ec5 v\u1ee1.<\/li>\n<\/ul>\n\n\n\n

          Thi\u1ebft b\u1ecb th\u00f4ng minh s\u1ebd tr\u1edf th\u00e0nh ti\u00eau chu\u1ea9n trong l\u0129nh v\u1ef1c s\u1ea3n xu\u1ea5t ch\u1ea5t b\u00e1n d\u1eabn cao c\u1ea5p, gi\u00fap c\u00e2n b\u1eb1ng gi\u1eefa n\u0103ng su\u1ea5t, \u0111\u1ed9 ch\u00ednh x\u00e1c v\u00e0 chi ph\u00ed.<\/p>\n\n\n\n

          6. Tri\u1ec3n v\u1ecdng \u1ee9ng d\u1ee5ng<\/h3>\n\n\n\n
            \n
          • Xe \u0111i\u1ec7n v\u00e0 n\u0103ng l\u01b0\u1ee3ng t\u00e1i t\u1ea1o<\/strong> \u2013 C\u00e1c thi\u1ebft b\u1ecb \u0111i\u1ec7n SiC gi\u00fap gi\u1ea3m \u0111\u00e1ng k\u1ec3 t\u1ed5n th\u1ea5t n\u0103ng l\u01b0\u1ee3ng v\u00e0 n\u00e2ng cao hi\u1ec7u su\u1ea5t c\u1ee7a b\u1ed9 bi\u1ebfn t\u1ea7n.<\/li>\n\n\n\n
          • 5G v\u00e0 Truy\u1ec1n th\u00f4ng t\u1ea7n s\u1ed1 v\u00f4 tuy\u1ebfn<\/strong> \u2013 C\u00e1c thi\u1ebft b\u1ecb GaN th\u1ec3 hi\u1ec7n hi\u1ec7u su\u1ea5t v\u01b0\u1ee3t tr\u1ed9i trong c\u00e1c \u1ee9ng d\u1ee5ng t\u1ea7n s\u1ed1 cao, c\u00f4ng su\u1ea5t l\u1edbn.<\/li>\n\n\n\n
          • T\u00ednh to\u00e1n hi\u1ec7u su\u1ea5t cao v\u00e0 Quang \u0111i\u1ec7n t\u1eed<\/strong> \u2013 V\u1eadt li\u1ec7u composite gi\u00fap thu nh\u1ecf k\u00edch th\u01b0\u1edbc v\u00e0 t\u0103ng c\u01b0\u1eddng m\u1ee9c \u0111\u1ed9 t\u00edch h\u1ee3p c\u1ee7a chip.<\/li>\n<\/ul>\n\n\n\n

            Khi nhu c\u1ea7u ng\u00e0y c\u00e0ng t\u0103ng, thi\u1ebft b\u1ecb ch\u1ebf bi\u1ebfn s\u1ebd ti\u1ebfp t\u1ee5c \u0111\u01b0\u1ee3c c\u1ea3i ti\u1ebfn, mang \u0111\u1ebfn c\u00e1c gi\u1ea3i ph\u00e1p t\u00f9y ch\u1ec9nh th\u00f4ng minh, c\u00f3 \u0111\u1ed9 ch\u00ednh x\u00e1c cao v\u00e0 t\u1ef7 l\u1ec7 l\u1ed7i th\u1ea5p.<\/p>\n\n\n\n

            7. K\u1ebft lu\u1eadn<\/h3>\n\n\n\n

            Thi\u1ebft b\u1ecb ch\u1ebf t\u1ea1o b\u00e1n d\u1eabn th\u1ebf h\u1ec7 m\u1edbi \u0111ang ph\u00e1t tri\u1ec3n xoay quanh c\u00e1c v\u1eadt li\u1ec7u SiC, GaN v\u00e0 v\u1eadt li\u1ec7u composite. C\u00e1c xu h\u01b0\u1edbng ph\u00e1t tri\u1ec3n ch\u00ednh bao g\u1ed3m:<\/p>\n\n\n\n

              \n
            • C\u1eaft v\u00e0 \u0111\u00e1nh b\u00f3ng v\u1edbi \u0111\u1ed9 ch\u00ednh x\u00e1c cao<\/li>\n\n\n\n
            • Kh\u1ea3 n\u0103ng t\u01b0\u01a1ng th\u00edch v\u1edbi c\u00e1c v\u1eadt li\u1ec7u kh\u00f4ng \u0111\u1ed3ng nh\u1ea5t v\u00e0 v\u1eadt li\u1ec7u composite<\/li>\n\n\n\n
            • T\u1ef1 \u0111\u1ed9ng h\u00f3a th\u00f4ng minh v\u00e0 \u0111i\u1ec1u khi\u1ec3n h\u1ed7 tr\u1ee3 b\u1edfi tr\u00ed tu\u1ec7 nh\u00e2n t\u1ea1o<\/li>\n<\/ul>\n\n\n\n

              Vi\u1ec7c \u0111\u1ea7u t\u01b0 v\u00e0o thi\u1ebft b\u1ecb ch\u1ebf bi\u1ebfn ti\u00ean ti\u1ebfn gi\u00fap c\u00e1c nh\u00e0 s\u1ea3n xu\u1ea5t ch\u1ea5t b\u00e1n d\u1eabn ph\u00e1t huy t\u1ed1i \u0111a nh\u1eefng \u01b0u \u0111i\u1ec3m v\u1ec1 hi\u1ec7u su\u1ea5t c\u1ee7a c\u00e1c v\u1eadt li\u1ec7u m\u1edbi, t\u1eeb \u0111\u00f3 h\u1ed7 tr\u1ee3 vi\u1ec7c ph\u00e1t tri\u1ec3n c\u00e1c thi\u1ebft b\u1ecb c\u00f3 c\u00f4ng su\u1ea5t cao h\u01a1n, t\u1ea7n s\u1ed1 cao h\u01a1n v\u00e0 \u0111\u1ed9 tin c\u1eady cao h\u01a1n. B\u1eb1ng c\u00e1ch b\u1eaft k\u1ecbp nh\u1eefng xu h\u01b0\u1edbng c\u00f4ng ngh\u1ec7 n\u00e0y, ng\u00e0nh c\u00f4ng nghi\u1ec7p c\u00f3 th\u1ec3 th\u00fac \u0111\u1ea9y qu\u00e1 tr\u00ecnh \u0111\u1ed5i m\u1edbi trong l\u0129nh v\u1ef1c xe \u0111i\u1ec7n, truy\u1ec1n th\u00f4ng 5G, t\u00ednh to\u00e1n hi\u1ec7u su\u1ea5t cao v\u00e0 c\u00e1c \u1ee9ng d\u1ee5ng m\u1edbi n\u1ed5i kh\u00e1c. C\u00e1c c\u00f4ng ty nh\u01b0 ZMSH cung c\u1ea5p c\u00e1c gi\u1ea3i ph\u00e1p ch\u1ebf bi\u1ebfn t\u00f9y ch\u1ec9nh \u0111\u1ec3 gi\u00fap c\u00e1c nh\u00e0 s\u1ea3n xu\u1ea5t t\u1ed1i \u01b0u h\u00f3a hi\u1ec7u qu\u1ea3 qu\u00e1 tr\u00ecnh s\u1ea3n xu\u1ea5t t\u1ea5m wafer SiC v\u00e0 GaN.<\/p>","protected":false},"excerpt":{"rendered":"

              1. Introduction With the rapid development of electric vehicles, renewable energy, 5G communication, and high-performance computing, traditional silicon-based semiconductors are increasingly limited in high-power, high-frequency, and high-temperature environments. Silicon carbide (SiC) and gallium nitride (GaN), as wide-bandgap semiconductor materials, offer high breakdown voltage, excellent thermal conductivity, and superior high-frequency performance, making them core materials for […]<\/p>\n","protected":false},"author":1,"featured_media":1931,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"footnotes":""},"categories":[24],"tags":[405,410,404,334,409,407,412,182,325,403,411,408,414,166,184,72,413,406],"class_list":["post-1930","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-industry-news","tag-5g-rf-devices","tag-ai-assisted-control","tag-chemical-mechanical-polishing-2","tag-cmp","tag-composite-semiconductor-materials","tag-electric-vehicle-power-devices","tag-gallium-nitride","tag-gan","tag-heterogeneous-integration","tag-high-precision-cutting","tag-icp-etching","tag-mocvd","tag-next-generation-semiconductor-equipment","tag-semiconductor-processing","tag-sic","tag-silicon-carbide","tag-smart-automation","tag-wafer-processing"],"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/posts\/1930","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/comments?post=1930"}],"version-history":[{"count":1,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/posts\/1930\/revisions"}],"predecessor-version":[{"id":1932,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/posts\/1930\/revisions\/1932"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/media\/1931"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/media?parent=1930"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/categories?post=1930"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/vi\/wp-json\/wp\/v2\/tags?post=1930"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}