{"id":2360,"date":"2026-04-22T07:08:49","date_gmt":"2026-04-22T07:08:49","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2360"},"modified":"2026-04-22T07:13:29","modified_gmt":"2026-04-22T07:13:29","slug":"ai350ht-medium-beam-high-temperature-ion-implantation-system-for-6-8-inch-sic-and-silicon-wafer-processing","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/tr\/product\/ai350ht-medium-beam-high-temperature-ion-implantation-system-for-6-8-inch-sic-and-silicon-wafer-processing\/","title":{"rendered":"6\/8 \u0130n\u00e7 SiC ve Silikon Gofret \u0130\u015fleme i\u00e7in Ai350HT Orta I\u015f\u0131nl\u0131 Y\u00fcksek S\u0131cakl\u0131k \u0130yon \u0130mplantasyon Sistemi"},"content":{"rendered":"

\"6\/8Ai350HT (Medium Beam) y\u00fcksek s\u0131cakl\u0131k iyon implantasyon sistemi, 6 in\u00e7 ve 8 in\u00e7 silikon gofret yar\u0131 iletken \u00fcretim hatlar\u0131n\u0131n yan\u0131 s\u0131ra SiC proses uygulamalar\u0131 i\u00e7in tasarlanm\u0131\u015ft\u0131r. Geli\u015fmi\u015f yar\u0131 iletken \u00fcretiminde y\u00fcksek enerjili ve y\u00fcksek s\u0131cakl\u0131kl\u0131 doping i\u015flemleri i\u00e7in geli\u015ftirilmi\u015f bir orta ak\u0131m iyon implanteridir.<\/p>\n

Sistem 5 keV ile 350 keV aras\u0131nda bir enerji aral\u0131\u011f\u0131n\u0131 destekleyerek hem s\u0131\u011f hem de derin implantasyon i\u015flemlerini m\u00fcmk\u00fcn k\u0131lar. \u0130mplantasyon s\u0131ras\u0131nda daha iyi dopant aktivasyonu ve daha az kafes hasar\u0131 sa\u011flayan 500\u00b0C'ye kadar \u00e7al\u0131\u015fabilen y\u00fcksek s\u0131cakl\u0131kl\u0131 elektrostatik ayna ile donat\u0131lm\u0131\u015ft\u0131r. Kararl\u0131 \u0131\u015f\u0131n performans\u0131 ve y\u00fcksek hassasiyetli kontrol ile birlikte sistem, hem silikon bazl\u0131 hem de geni\u015f bant aral\u0131kl\u0131 yar\u0131 iletken \u00fcretimi i\u00e7in uygundur.<\/p>\n

\n

\u00d6zellikler<\/h2>\n

Y\u00fcksek S\u0131cakl\u0131kta \u0130mplantasyon Yetene\u011fi<\/h3>\n

500\u00b0C'ye kadar destekleyen y\u00fcksek s\u0131cakl\u0131kl\u0131 elektrostatik ayna ile donat\u0131lm\u0131\u015f olup, geli\u015fmi\u015f prosesler i\u00e7in daha iyi implantasyon verimlili\u011fi ve dopant aktivasyonu sa\u011flar.<\/p>\n

Geni\u015f Enerji Aral\u0131\u011f\u0131<\/h3>\n

5-350 keV enerji aral\u0131\u011f\u0131, s\u0131\u011f ba\u011flant\u0131 olu\u015fumundan derin implantasyon i\u015flemlerine kadar esnek implantasyon gereksinimlerini destekler.<\/p>\n

Y\u00fcksek Hassasiyetli I\u015f\u0131n Kontrol\u00fc<\/h3>\n

A\u00e7\u0131 do\u011frulu\u011fu \u2264 0,2\u00b0, \u0131\u015f\u0131n paralelli\u011fi \u2264 0,2\u00b0, homojenlik \u2264 0,5% ve tekrarlanabilirlik \u2264 0,5% ile do\u011fru implantasyon performans\u0131 sa\u011flar.<\/p>\n

Kararl\u0131 I\u015f\u0131n Performans\u0131<\/h3>\n

I\u015f\u0131n stabilitesi saatte 10% i\u00e7inde kontrol edilir ve uzun \u00fcretim d\u00f6ng\u00fcleri s\u0131ras\u0131nda tutarl\u0131 proses kalitesi sa\u011flar.<\/p>\n

Uzun \u00d6m\u00fcrl\u00fc \u0130yon Kayna\u011f\u0131<\/h3>\n

Bak\u0131m s\u0131kl\u0131\u011f\u0131n\u0131 azaltan ve \u00e7al\u0131\u015fma s\u00fcresini art\u0131ran, \u2265150 saat hizmet \u00f6mr\u00fcne sahip bir metal Al iyon kayna\u011f\u0131 ile donat\u0131lm\u0131\u015ft\u0131r.<\/p>\n

Y\u00fcksek Verim Kapasitesi<\/h3>\n

Yar\u0131 iletken \u00fcretim ortamlar\u0131 i\u00e7in uygun olan saatte \u2265 200 gofret \u00fcretimini destekler.<\/p>\n

Geli\u015fmi\u015f S\u00fcre\u00e7 Uyumlulu\u011fu<\/h3>\n

SiC prosesleri ve geleneksel silikon bazl\u0131 yar\u0131 iletken \u00fcretimi ile uyumludur.<\/p>\n

\"\"\"\"<\/p>\n

\n

Temel \u00d6zellikler<\/h2>\n

S\u00fcre\u00e7 Parametreleri<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
\u00d6\u011fe<\/th>\n\u015eartname<\/th>\n<\/tr>\n<\/thead>\n
Gofret Boyutu<\/td>\n6-8 in\u00e7<\/td>\n<\/tr>\n
Enerji Aral\u0131\u011f\u0131<\/td>\n5-350 keV<\/td>\n<\/tr>\n
\u0130mplante Edilmi\u015f Elemanlar<\/td>\nC, Al, B, P, N, He, Ar<\/td>\n<\/tr>\n
Doz Aral\u0131\u011f\u0131<\/td>\n1E11-1E17 iyon\/cm\u00b2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

I\u015f\u0131n Performans\u0131<\/h3>\n
\n
\n\n\n\n\n\n\n
\u00d6\u011fe<\/th>\n\u015eartname<\/th>\n<\/tr>\n<\/thead>\n
Kiri\u015f Stabilitesi<\/td>\n\u2264 10% \/ saat (\u22641 \u0131\u015f\u0131n kesintisi veya saatte ark)<\/td>\n<\/tr>\n
Kiri\u015f Paralelli\u011fi<\/td>\n\u2264 0.2\u00b0<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

\u0130mplantasyon Do\u011frulu\u011fu<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
\u00d6\u011fe<\/th>\n\u015eartname<\/th>\n<\/tr>\n<\/thead>\n
\u0130mplant A\u00e7\u0131 Aral\u0131\u011f\u0131<\/td>\n0\u00b0-45\u00b0<\/td>\n<\/tr>\n
A\u00e7\u0131 Do\u011frulu\u011fu<\/td>\n\u2264 0.2\u00b0<\/td>\n<\/tr>\n
Tekd\u00fczelik (1\u03c3)<\/td>\n\u2264 0,5% (P+, 1E14, 100 keV)<\/td>\n<\/tr>\n
Tekrarlanabilirlik (1\u03c3)<\/td>\n\u2264 0,5%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Sistem Performans\u0131<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n\n\n
\u00d6\u011fe<\/th>\n\u015eartname<\/th>\n<\/tr>\n<\/thead>\n
Verim<\/td>\nSaatte \u2265 200 gofret<\/td>\n<\/tr>\n
Maksimum Chuck S\u0131cakl\u0131\u011f\u0131<\/td>\n500\u00b0C<\/td>\n<\/tr>\n
Ekipman Boyutu<\/td>\n6270 \u00d7 3500 \u00d7 3000 mm<\/td>\n<\/tr>\n
Vakum Seviyesi<\/td>\n5E-7 Torr<\/td>\n<\/tr>\n
X-ray S\u0131z\u0131nt\u0131s\u0131<\/td>\n\u2264 0,3 \u03bcSv\/h<\/td>\n<\/tr>\n
Tarama Modu<\/td>\nYatay elektrostatik tarama + dikey mekanik tarama<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\n

Uygulama Alanlar\u0131<\/h2>\n

SiC Yar\u0131 \u0130letken \u00dcretimi<\/h3>\n

Y\u00fcksek s\u0131cakl\u0131kta iyon implantasyon i\u015flemleri gerektiren silisyum karb\u00fcr cihaz imalat\u0131nda kullan\u0131l\u0131r.<\/p>\n

Silikon Tabanl\u0131 Yar\u0131 \u0130letken \u0130\u015fleme<\/h3>\n

CMOS ve 6 in\u00e7 ve 8 in\u00e7 gofretlerde entegre devre \u00fcretimi i\u00e7in ge\u00e7erlidir.<\/p>\n

Y\u00fcksek S\u0131cakl\u0131k \u0130mplantasyon Prosesleri<\/h3>\n

Kristal hasar\u0131n\u0131 azaltmak ve dopant aktivasyonunu iyile\u015ftirmek i\u00e7in y\u00fcksek s\u0131cakl\u0131k gerektiren prosesler i\u00e7in uygundur.<\/p>\n

G\u00fc\u00e7 Cihaz\u0131 \u00dcretimi<\/h3>\n

Derin implantasyon ve y\u00fcksek enerji prosesleri gerektiren g\u00fc\u00e7 yar\u0131 iletken cihazlar\u0131nda kullan\u0131l\u0131r.<\/p>\n

\u0130leri Malzeme M\u00fchendisli\u011fi<\/h3>\n

Geli\u015fmi\u015f yar\u0131 iletken malzemeler ve s\u00fcre\u00e7 geli\u015ftirme ortamlar\u0131nda iyon implantasyonunu destekler.<\/p>\n

\n

S\u0131k\u00e7a Sorulan Sorular<\/h2>\n

1. Ai350HT hangi yonga plakas\u0131 boyutlar\u0131n\u0131 destekler?<\/h3>\n

Sistem 6 in\u00e7 ve 8 in\u00e7 wafer'lar\u0131 destekler ve hem silikon bazl\u0131 hem de SiC yar\u0131 iletken \u00fcretim hatlar\u0131 i\u00e7in uygundur.<\/p>\n

2. \u0130mplantasyon s\u0131ras\u0131nda desteklenen maksimum s\u0131cakl\u0131k nedir?<\/h3>\n

Sistem, mekanik s\u0131k\u0131\u015ft\u0131rmal\u0131 \u0131s\u0131tmal\u0131 bir elektrostatik ayna kullanarak 500\u00b0C'ye kadar y\u00fcksek s\u0131cakl\u0131k implantasyonunu destekler.<\/p>\n

3. Bu sistemin SiC prosesleri i\u00e7in temel avantajlar\u0131 nelerdir?<\/h3>\n

Sistem, y\u00fcksek s\u0131cakl\u0131k kapasitesi, istikrarl\u0131 \u0131\u015f\u0131n performans\u0131 ve SiC s\u00fcre\u00e7leriyle uyumlulu\u011fu bir araya getirerek geni\u015f bant aral\u0131kl\u0131 yar\u0131 iletken uygulamalar\u0131 i\u00e7in uygun hale getiriyor.<\/p>","protected":false},"excerpt":{"rendered":"

Ai350HT (Medium Beam) y\u00fcksek s\u0131cakl\u0131k iyon implantasyon sistemi, 6 in\u00e7 ve 8 in\u00e7 silikon gofret yar\u0131 iletken \u00fcretim hatlar\u0131n\u0131n yan\u0131 s\u0131ra SiC proses uygulamalar\u0131 i\u00e7in tasarlanm\u0131\u015ft\u0131r. Geli\u015fmi\u015f yar\u0131 iletken \u00fcretiminde y\u00fcksek enerjili ve y\u00fcksek s\u0131cakl\u0131kl\u0131 doping i\u015flemleri i\u00e7in geli\u015ftirilmi\u015f bir orta ak\u0131m iyon implanteridir.<\/p>","protected":false},"featured_media":2361,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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