{"id":2354,"date":"2026-04-22T06:34:59","date_gmt":"2026-04-22T06:34:59","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2354"},"modified":"2026-04-22T07:16:34","modified_gmt":"2026-04-22T07:16:34","slug":"ai300-medium-beam-high-temperature-ion-implantation-system-for-12-inch-wafer-processing","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/tr\/product\/ai300-medium-beam-high-temperature-ion-implantation-system-for-12-inch-wafer-processing\/","title":{"rendered":"Ai300 (Orta I\u015f\u0131n) 12 \u0130n\u00e7 Gofret \u0130\u015fleme i\u00e7in Y\u00fcksek S\u0131cakl\u0131k \u0130yon \u0130mplantasyon Sistemi"},"content":{"rendered":"

\"Ai300Ai300 (Orta I\u015f\u0131n) y\u00fcksek s\u0131cakl\u0131k iyon implantasyon sistemi, 12 in\u00e7 silikon gofret yar\u0131 iletken \u00fcretim hatlar\u0131 i\u00e7in tasarlanm\u0131\u015ft\u0131r. SiC proses hatlar\u0131 da dahil olmak \u00fczere hem silikon bazl\u0131 hem de geni\u015f bant aral\u0131kl\u0131 yar\u0131 iletken uygulamalar\u0131nda geli\u015fmi\u015f doping i\u015flemleri i\u00e7in geli\u015ftirilmi\u015f bir orta ak\u0131m iyon implanteridir.<\/p>\n

Sistem, 5 keV ila 300 keV aras\u0131nda bir enerji aral\u0131\u011f\u0131n\u0131 destekleyerek s\u0131\u011f ba\u011flant\u0131 olu\u015fumundan derin doping uygulamalar\u0131na kadar esnek implantasyon sa\u011flar. Maksimum 400\u00b0C'ye kadar s\u0131cakl\u0131\u011fa sahip y\u00fcksek s\u0131cakl\u0131kta \u0131s\u0131t\u0131lm\u0131\u015f bir yonga plakas\u0131 a\u015famas\u0131 ile donat\u0131lm\u0131\u015ft\u0131r, bu da implantasyon s\u0131ras\u0131nda daha iyi dopant aktivasyonu ve daha az kafes hasar\u0131 sa\u011flar.<\/p>\n

\u0130stikrarl\u0131 \u0131\u015f\u0131n performans\u0131, y\u00fcksek hassasiyetli kontrol ve b\u00fcy\u00fck \u00f6l\u00e7ekli entegre devre s\u00fcre\u00e7leriyle uyumlulu\u011fuyla Ai300 sistemi, geli\u015fmi\u015f yar\u0131 iletken \u00fcretim ortamlar\u0131 i\u00e7in uygundur.<\/p>\n

\n

\u00d6zellikler<\/h2>\n

Y\u00fcksek S\u0131cakl\u0131k \u0130mplant \u00d6zelli\u011fi<\/h3>\n

400\u00b0C'ye kadar s\u0131cakl\u0131klar\u0131 destekleyen, implantasyon kalitesini ve dopant aktivasyon verimlili\u011fini art\u0131ran \u0131s\u0131tmal\u0131 bir wafer a\u015famas\u0131 ile donat\u0131lm\u0131\u015ft\u0131r.<\/p>\n

Geni\u015f Enerji Aral\u0131\u011f\u0131<\/h3>\n

5-300 keV enerji aral\u0131\u011f\u0131, geli\u015fmi\u015f cihaz yap\u0131lar\u0131 i\u00e7in hem s\u0131\u011f hem de derin implantasyon s\u00fcre\u00e7lerini destekler.<\/p>\n

Y\u00fcksek Hassasiyetli I\u015f\u0131n Kontrol\u00fc<\/h3>\n

A\u00e7\u0131 do\u011frulu\u011fu \u2264 0,1\u00b0, \u0131\u015f\u0131n paralelli\u011fi \u2264 0,1\u00b0, homojenlik \u2264 0,5% ve tekrarlanabilirlik \u2264 0,5% ile y\u00fcksek do\u011frulukta implantasyon sa\u011flar.<\/p>\n

Y\u00fcksek Verim Performans\u0131<\/h3>\n

Y\u00fcksek hacimli yar\u0131 iletken \u00fcretimi i\u00e7in uygun olan saatte \u2265 500 wafer'a kadar i\u015f hacmini destekler.<\/p>\n

Geli\u015fmi\u015f \u0130yon Kayna\u011f\u0131 Yetene\u011fi<\/h3>\n

C, B, P, N, He ve Ar dahil olmak \u00fczere birden fazla implante edilmi\u015f elementi destekleyerek \u00e7e\u015fitli yar\u0131 iletken proses gereksinimlerini kar\u015f\u0131lar.<\/p>\n

LSI S\u00fcre\u00e7 Uyumlulu\u011fu<\/h3>\n

B\u00fcy\u00fck \u00f6l\u00e7ekli entegre devre \u00fcretim s\u00fcre\u00e7leri ve geli\u015fmi\u015f cihaz \u00fcretimi ile tamamen uyumludur.<\/p>\n

\"\" \"\"<\/p>\n

\n

Temel \u00d6zellikler<\/h2>\n

S\u00fcre\u00e7 Parametreleri<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
\u00d6\u011fe<\/th>\n\u015eartname<\/th>\n<\/tr>\n<\/thead>\n
Gofret Boyutu<\/td>\n12 in\u00e7<\/td>\n<\/tr>\n
Enerji Aral\u0131\u011f\u0131<\/td>\n5-300 keV<\/td>\n<\/tr>\n
\u0130mplante Edilmi\u015f Elemanlar<\/td>\nC, B, P, N, He, Ar<\/td>\n<\/tr>\n
Doz Aral\u0131\u011f\u0131<\/td>\n1E11-1E16 iyon\/cm\u00b2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

I\u015f\u0131n Performans\u0131<\/h3>\n
\n
\n\n\n\n\n\n\n
\u00d6\u011fe<\/th>\n\u015eartname<\/th>\n<\/tr>\n<\/thead>\n
Kiri\u015f Stabilitesi<\/td>\n\u2264 10% \/ saat (\u22641 \u0131\u015f\u0131n kesintisi veya saatte ark)<\/td>\n<\/tr>\n
Kiri\u015f Paralelli\u011fi<\/td>\n\u2264 0.1\u00b0<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

\u0130mplantasyon Do\u011frulu\u011fu<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
\u00d6\u011fe<\/th>\n\u015eartname<\/th>\n<\/tr>\n<\/thead>\n
\u0130mplant A\u00e7\u0131 Aral\u0131\u011f\u0131<\/td>\n0\u00b0-45\u00b0<\/td>\n<\/tr>\n
A\u00e7\u0131 Do\u011frulu\u011fu<\/td>\n\u2264 0.1\u00b0<\/td>\n<\/tr>\n
Tekd\u00fczelik (1\u03c3)<\/td>\n\u2264 0,5% (P+, 1E14, 100 keV)<\/td>\n<\/tr>\n
Tekrarlanabilirlik (1\u03c3)<\/td>\n\u2264 0,5%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Sistem Performans\u0131<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n\n\n
\u00d6\u011fe<\/th>\n\u015eartname<\/th>\n<\/tr>\n<\/thead>\n
Verim<\/td>\nSaatte \u2265 500 gofret<\/td>\n<\/tr>\n
Maksimum \u0130mplant S\u0131cakl\u0131\u011f\u0131<\/td>\n400\u00b0C<\/td>\n<\/tr>\n
Ekipman Boyutu<\/td>\n6400 \u00d7 3640 \u00d7 3100 mm<\/td>\n<\/tr>\n
Vakum Seviyesi<\/td>\n5E-7 Torr<\/td>\n<\/tr>\n
X-ray S\u0131z\u0131nt\u0131s\u0131<\/td>\n\u2264 0,3 \u03bcSv\/h<\/td>\n<\/tr>\n
Tarama Modu<\/td>\nYatay elektrostatik tarama + dikey mekanik tarama<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\n

Uygulama Alanlar\u0131<\/h2>\n

SiC Yar\u0131 \u0130letken \u0130\u015fleme<\/h3>\n

Silisyum karb\u00fcr cihaz \u00fcretiminde kullan\u0131l\u0131r ve geni\u015f bant aral\u0131kl\u0131 malzemeler i\u00e7in gerekli olan y\u00fcksek s\u0131cakl\u0131k implantasyon i\u015flemlerini destekler.<\/p>\n

Silikon Tabanl\u0131 Yar\u0131 \u0130letken \u00dcretimi<\/h3>\n

CMOS ve geli\u015fmi\u015f entegre devre \u00fcretimi i\u00e7in 12 in\u00e7 silikon gofret \u00fcretim hatlar\u0131na uygulanabilir.<\/p>\n

Y\u00fcksek S\u0131cakl\u0131k \u0130mplantasyon Prosesleri<\/h3>\n

Kusurlar\u0131 azaltmak ve dopant aktivasyonunu iyile\u015ftirmek i\u00e7in y\u00fcksek wafer s\u0131cakl\u0131\u011f\u0131 gerektiren implantasyon i\u015flemlerini destekler.<\/p>\n

G\u00fc\u00e7 Cihaz\u0131 \u00dcretimi<\/h3>\n

Hassas katk\u0131lama ve y\u00fcksek enerji implantasyonunun gerekli oldu\u011fu g\u00fc\u00e7 yar\u0131 iletken cihazlar\u0131 i\u00e7in uygundur.<\/p>\n

\u0130leri Entegre Devre \u00dcretimi<\/h3>\n

Y\u00fcksek hassasiyet ve y\u00fcksek verim gereksinimleri ile LSI proses entegrasyonunu destekler.<\/p>\n

\n

S\u0131k\u00e7a Sorulan Sorular<\/h2>\n

1. Ai300 sistemi hangi wafer boyutunu destekliyor?<\/h3>\n

Sistem 12 in\u00e7lik silikon gofretler i\u00e7in tasarlanm\u0131\u015ft\u0131r ve geli\u015fmi\u015f yar\u0131 iletken \u00fcretim hatlar\u0131 i\u00e7in uygundur.<\/p>\n

2. Y\u00fcksek s\u0131cakl\u0131k implantasyon kabiliyetinin temel avantaj\u0131 nedir?<\/h3>\n

Sistem, kafes hasar\u0131n\u0131 azaltmaya, dopant aktivasyonunu iyile\u015ftirmeye ve genel cihaz performans\u0131n\u0131 art\u0131rmaya yard\u0131mc\u0131 olan 400 \u00b0 C'ye kadar implantasyonu destekler.<\/p>\n

3. Sistem hangi d\u00fczeyde hassasiyet ve \u00fcretim verimlili\u011fi sa\u011fl\u0131yor?<\/h3>\n

Sistem 0,1 derecelik a\u00e7\u0131 hassasiyeti, 0,1 derecelik \u0131\u015f\u0131n paralelli\u011fi ve y\u00fczde 0,5'lik tekd\u00fczelik ve tekrarlanabilirlik sa\u011flar ve saatte 500 gofrete kadar verim sa\u011flar.<\/p>","protected":false},"excerpt":{"rendered":"

Ai300 (Orta I\u015f\u0131n) y\u00fcksek s\u0131cakl\u0131k iyon implantasyon sistemi, 12 in\u00e7 silikon gofret yar\u0131 iletken \u00fcretim hatlar\u0131 i\u00e7in tasarlanm\u0131\u015ft\u0131r. SiC proses hatlar\u0131 da dahil olmak \u00fczere hem silikon bazl\u0131 hem de geni\u015f bant aral\u0131kl\u0131 yar\u0131 iletken uygulamalar\u0131nda geli\u015fmi\u015f doping i\u015flemleri i\u00e7in geli\u015ftirilmi\u015f bir orta ak\u0131m iyon implanteridir.<\/p>","protected":false},"featured_media":2357,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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