{"id":2196,"date":"2026-04-14T06:34:45","date_gmt":"2026-04-14T06:34:45","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2196"},"modified":"2026-04-14T06:34:48","modified_gmt":"2026-04-14T06:34:48","slug":"2-inch-6h-n-silicon-carbide-wafer","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/tr\/product\/2-inch-6h-n-silicon-carbide-wafer\/","title":{"rendered":"2 \u0130n\u00e7 6H-N Silisyum Karb\u00fcr Wafer"},"content":{"rendered":"

\"22 in\u00e7 6H-N Silisyum Karb\u00fcr gofret, hem ara\u015ft\u0131rma hem de cihaz d\u00fczeyinde uygulamalar i\u00e7in tasarlanm\u0131\u015f tek kristalli bir alt tabakad\u0131r. 6H poli tipi, zorlu ko\u015fullar alt\u0131nda istikrarl\u0131 elektrik iletkenli\u011fi ve iyi termal performans sa\u011flayan alt\u0131gen bir kristal yap\u0131ya sahiptir.<\/p>\n

Yakla\u015f\u0131k 3,02 eV bant aral\u0131\u011f\u0131 ile 6H-SiC, \u00f6zellikle y\u00fcksek voltaj, y\u00fcksek s\u0131cakl\u0131k ve y\u00fcksek frekans ko\u015fullar\u0131nda geleneksel silikon malzemelerin ba\u015far\u0131s\u0131z oldu\u011fu ortamlarda \u00e7al\u0131\u015fmay\u0131 sa\u011flar. Bu da onu erken a\u015fama cihaz prototipleme, malzeme testi ve \u00f6zel elektronik bile\u015fen \u00fcretimi i\u00e7in uygun hale getirir.<\/p>\n

ZMSH SiC gofretleri, tutarl\u0131 diren\u00e7, d\u00fc\u015f\u00fck kusur yo\u011funlu\u011fu ve y\u00fcksek y\u00fczey kalitesi sa\u011flamak i\u00e7in kontroll\u00fc kristal b\u00fcy\u00fctme teknikleri kullan\u0131larak \u00fcretilmektedir. Bu parametreler, tekrarlanabilir deneysel sonu\u00e7lar ve istikrarl\u0131 cihaz performans\u0131 sa\u011flamak i\u00e7in kritik \u00f6neme sahiptir.<\/p>\n

Temel \u00d6zellikler<\/h2>\n

N-Tipi \u0130letken Yap\u0131<\/h3>\n

Gofret, yar\u0131 iletken cihaz \u00fcretimi ve elektriksel karakterizasyon deneyleri i\u00e7in uygun kararl\u0131 elektron iletim yollar\u0131 sa\u011flayan N-tipi olarak katk\u0131lanm\u0131\u015ft\u0131r.<\/p>\n

Geni\u015f Bant Aral\u0131kl\u0131 Yar\u0131 \u0130letken Malzeme<\/h3>\n

3,02 eV bant aral\u0131\u011f\u0131 ile SiC, silikona k\u0131yasla \u00f6nemli \u00f6l\u00e7\u00fcde daha y\u00fcksek elektrik alan g\u00fcc\u00fcn\u00fc destekleyerek y\u00fcksek voltajl\u0131 \u00e7al\u0131\u015fma ve geli\u015fmi\u015f cihaz verimlili\u011fi sa\u011flar.<\/p>\n

Y\u00fcksek Termal \u0130letkenlik<\/h3>\n

SiC m\u00fckemmel termal iletkenlik sergileyerek aktif cihaz b\u00f6lgelerinden verimli \u0131s\u0131 da\u011f\u0131l\u0131m\u0131na olanak tan\u0131r. Bu, cihaz g\u00fcvenilirli\u011fini art\u0131r\u0131r ve y\u00fcksek g\u00fc\u00e7l\u00fc uygulamalarda \u00e7al\u0131\u015fma \u00f6mr\u00fcn\u00fc uzat\u0131r.<\/p>\n

Y\u00fcksek Mekanik Dayan\u0131m<\/h3>\n

Mohs sertli\u011fi yakla\u015f\u0131k 9,2 olan SiC gofretler, \u00fcretim s\u0131ras\u0131nda mekanik hasara, y\u00fczey a\u015f\u0131nmas\u0131na ve i\u015fleme stresine kar\u015f\u0131 g\u00fc\u00e7l\u00fc bir diren\u00e7 sunar.<\/p>\n

Y\u00fcksek Ar\u0131za Elektrik Alan\u0131<\/h3>\n

Y\u00fcksek k\u0131r\u0131lma alan\u0131 g\u00fcc\u00fc, y\u00fcksek voltaj tolerans\u0131n\u0131 korurken kompakt cihaz yap\u0131lar\u0131 sa\u011flar ve SiC'yi geli\u015fmi\u015f g\u00fc\u00e7 elektroni\u011fi i\u00e7in ideal hale getirir.<\/p>\n

Teknik \u00d6zellikler<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Parametre<\/th>\n\u015eartname<\/th>\n<\/tr>\n<\/thead>\n
Malzeme<\/td>\nTek Kristal Silisyum Karb\u00fcr<\/td>\n<\/tr>\n
Marka<\/td>\nZMSH<\/td>\n<\/tr>\n
\u00c7oklu Tip<\/td>\n6H-N<\/td>\n<\/tr>\n
\u00c7ap<\/td>\n2 in\u00e7 (50,8 mm)<\/td>\n<\/tr>\n
Kal\u0131nl\u0131k<\/td>\n350 \u03bcm \/ 650 \u03bcm<\/td>\n<\/tr>\n
\u0130letkenlik Tipi<\/td>\nN-tipi<\/td>\n<\/tr>\n
Y\u00fczey \u0130\u015flemi<\/td>\nCMP Cilal\u0131 Si-y\u00fcz<\/td>\n<\/tr>\n
C-y\u00fcz Tedavisi<\/td>\nMekanik Cilal\u0131<\/td>\n<\/tr>\n
Y\u00fczey P\u00fcr\u00fczl\u00fcl\u00fc\u011f\u00fc<\/td>\nRa < 0,2 nm (Si-y\u00fcz)<\/td>\n<\/tr>\n
Diren\u00e7lilik<\/td>\n0,015 - 0,028 \u03a9-cm<\/td>\n<\/tr>\n
Renk<\/td>\n\u015eeffaf \/ A\u00e7\u0131k Ye\u015fil<\/td>\n<\/tr>\n
Paketleme<\/td>\nTekli Gofret Konteyneri<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

6H-SiC'in Malzeme \u00d6zellikleri<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
M\u00fclkiyet<\/th>\nDe\u011fer<\/th>\n<\/tr>\n<\/thead>\n
Kafes Parametreleri<\/td>\na = 3.073 \u00c5, c = 15.117 \u00c5<\/td>\n<\/tr>\n
Mohs Sertli\u011fi<\/td>\n\u2248 9.2<\/td>\n<\/tr>\n
Yo\u011funluk<\/td>\n3,21 g\/cm\u00b3<\/td>\n<\/tr>\n
Termal Genle\u015fme Katsay\u0131s\u0131<\/td>\n4-5 \u00d710-\u2076 \/K<\/td>\n<\/tr>\n
K\u0131r\u0131lma \u0130ndisi (750 nm)<\/td>\nn\u2080 = 2,60, n\u2091 = 2,65<\/td>\n<\/tr>\n
Dielektrik Sabiti<\/td>\n\u2248 9.66<\/td>\n<\/tr>\n
Termal \u0130letkenlik<\/td>\n~3,7-3,9 W\/cm-K<\/td>\n<\/tr>\n
Bant aral\u0131\u011f\u0131<\/td>\n3,02 eV<\/td>\n<\/tr>\n
Ar\u0131za Elektrik Alan\u0131<\/td>\n3-5 \u00d710\u2076 V\/cm<\/td>\n<\/tr>\n
Doygunluk S\u00fcr\u00fcklenme H\u0131z\u0131<\/td>\n2.0 \u00d710\u2075 m\/s<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Bu kendine \u00f6zg\u00fc fiziksel \u00f6zellikler, 6H-SiC'yi a\u015f\u0131r\u0131 elektrik ve termal ko\u015fullarda istikrarl\u0131 performans gerektiren uygulamalar i\u00e7in uygun hale getirir.<\/p>\n

\"2\u00dcretim S\u00fcreci<\/h2>\n

SiC tek kristal gofretler tipik olarak a\u015fa\u011f\u0131daki y\u00f6ntemler kullan\u0131larak \u00fcretilir Fiziksel Buhar Ta\u015f\u0131n\u0131m\u0131 (PVT) y\u00f6ntemi<\/strong>, geni\u015f bant aral\u0131kl\u0131 yar\u0131 iletken kristal b\u00fcy\u00fctme i\u00e7in olgun bir end\u00fcstriyel s\u00fcre\u00e7tir.<\/p>\n

Bu i\u015flemde, y\u00fcksek safl\u0131ktaki SiC kaynak malzemesi 2000\u00b0C'nin \u00fczerindeki s\u0131cakl\u0131klarda s\u00fcblimle\u015ftirilir. Buhar t\u00fcrleri dikkatle kontrol edilen bir termal gradyan \u00fczerinden ta\u015f\u0131n\u0131r ve bir tohum kristali \u00fczerinde yeniden kristalle\u015ftirilerek tek kristalli bir k\u00fcl\u00e7e (boule) olu\u015fturulur. B\u00fcy\u00fctme i\u015fleminden sonra boule dilimleme, al\u0131\u015ft\u0131rma, parlatma ve temizleme ad\u0131mlar\u0131yla gofret haline getirilir.<\/p>\n

Cihaz uygulamalar\u0131 i\u00e7in, gofretler ek i\u015flemlere tabi tutulabilir Kimyasal Buhar Biriktirme (CVD) epitaksiyel b\u00fcy\u00fcme<\/strong>, Bu da doping konsantrasyonunun ve katman kal\u0131nl\u0131\u011f\u0131n\u0131n hassas bir \u015fekilde kontrol edilmesini sa\u011flar. Bu ad\u0131m MOSFET ve diyot \u00fcretimi i\u00e7in gereklidir.<\/p>\n

Uygulamalar<\/h2>\n

G\u00fc\u00e7 Elektroni\u011fi<\/h3>\n

2 in\u00e7 6H-N SiC wafer'lar diyotlar, MOSFET yap\u0131lar\u0131 ve g\u00fc\u00e7 mod\u00fclleri dahil olmak \u00fczere g\u00fc\u00e7 yar\u0131 iletken cihazlar\u0131n\u0131n geli\u015ftirilmesi ve prototiplenmesinde kullan\u0131l\u0131r. Bu cihazlar enerji d\u00f6n\u00fc\u015f\u00fcm sistemleri ve g\u00fc\u00e7 y\u00f6netim devreleri i\u00e7in gereklidir.<\/p>\n

Y\u00fcksek S\u0131cakl\u0131k Elektroni\u011fi<\/h3>\n

SiC malzemeler y\u00fcksek s\u0131cakl\u0131klarda istikrarl\u0131 elektrik performans\u0131n\u0131 koruyarak havac\u0131l\u0131k elektroni\u011fi, end\u00fcstriyel izleme sistemleri ve enerji altyap\u0131s\u0131 uygulamalar\u0131 i\u00e7in uygun hale gelir.<\/p>\n

Yar\u0131 \u0130letken Ara\u015ft\u0131rma ve Geli\u015ftirme<\/h3>\n

Kullan\u0131labilirlikleri ve uygun maliyetleri nedeniyle 2 in\u00e7lik yonga plakalar\u0131, malzeme \u00e7al\u0131\u015fmalar\u0131 ve cihaz deneyleri i\u00e7in \u00fcniversite laboratuvarlar\u0131nda, ara\u015ft\u0131rma enstit\u00fclerinde ve pilot \u00fcretim ortamlar\u0131nda yayg\u0131n olarak kullan\u0131lmaktad\u0131r.<\/p>\n

Optoelektronik ve \u00d6zel Uygulamalar<\/h3>\n

SiC ayr\u0131ca belirli dalga boyu aral\u0131klar\u0131nda optik \u015feffafl\u0131k sergileyerek \u00f6zel fotonik ve optoelektronik ara\u015ft\u0131rma uygulamalar\u0131nda kullan\u0131lmas\u0131na olanak tan\u0131r.<\/p>\n

Avantajlar\"2<\/h2>\n

2 in\u00e7lik SiC wafer platformu, ara\u015ft\u0131rma ve geli\u015ftirme i\u00e7in \u00e7e\u015fitli avantajlar sa\u011flar:<\/p>\n

    \n
  • Daha b\u00fcy\u00fck wafer boyutlar\u0131na k\u0131yasla daha d\u00fc\u015f\u00fck maliyet<\/li>\n
  • Laboratuvar \u00f6l\u00e7ekli deneyler i\u00e7in daha kolay kullan\u0131m<\/li>\n
  • H\u0131zl\u0131 prototipleme ve s\u00fcre\u00e7 testi i\u00e7in uygundur<\/li>\n
  • Tekrarlanabilir sonu\u00e7lar i\u00e7in kararl\u0131 kristal kalitesi<\/li>\n
  • Ara\u015ft\u0131rma ihtiya\u00e7lar\u0131 i\u00e7in esnek \u00f6zelle\u015ftirme se\u00e7enekleri<\/li>\n<\/ul>\n

    SSS<\/h2>\n

    S1: 6H-SiC ve 4H-SiC aras\u0131ndaki fark nedir?<\/h3>\n

    6H-SiC ve 4H-SiC farkl\u0131 kristal poli tipleridir. 4H-SiC genellikle daha y\u00fcksek elektron hareketlili\u011fi sunar ve ticari g\u00fc\u00e7 cihazlar\u0131nda yayg\u0131n olarak kullan\u0131l\u0131rken, 6H-SiC kararl\u0131 elektriksel davran\u0131\u015f sa\u011flar ve genellikle ara\u015ft\u0131rma ve \u00f6zel elektronik uygulamalarda kullan\u0131l\u0131r.<\/p>\n

    S2: Gofrete hangi y\u00fczey i\u015flemi uygulan\u0131yor?<\/h3>\n

    Si-y\u00fcz, ultra p\u00fcr\u00fczs\u00fcz y\u00fczey kalitesi (Ra < 0,2 nm) elde etmek i\u00e7in kimyasal mekanik parlatma (CMP) kullan\u0131larak parlat\u0131l\u0131r. C y\u00fcz\u00fc, farkl\u0131 i\u015fleme gereksinimlerini desteklemek i\u00e7in mekanik olarak parlat\u0131l\u0131r.<\/p>\n

    S3: Gofret \u00f6zellikleri \u00f6zelle\u015ftirilebilir mi?<\/h3>\n

    Evet. ZMSH, m\u00fc\u015fteri gereksinimlerine g\u00f6re kal\u0131nl\u0131k, doping konsantrasyonu, diren\u00e7 aral\u0131\u011f\u0131 ve y\u00fczey haz\u0131rl\u0131\u011f\u0131 dahil olmak \u00fczere \u00f6zelle\u015ftirme se\u00e7enekleri sunar.<\/p>","protected":false},"excerpt":{"rendered":"

    ZMSH, yar\u0131 iletken ara\u015ft\u0131rmalar\u0131, g\u00fc\u00e7 elektroni\u011fi geli\u015ftirme ve y\u00fcksek performansl\u0131 elektronik cihaz \u00fcretimi i\u00e7in tasarlanm\u0131\u015f y\u00fcksek kaliteli 2 in\u00e7 6H-N silisyum karb\u00fcr (SiC) gofretler sa\u011flar. Silisyum karb\u00fcr, geleneksel silikon (Si) alt tabakalara k\u0131yasla \u00fcst\u00fcn elektriksel, termal ve mekanik \u00f6zellikler sunan geni\u015f bant aral\u0131kl\u0131 bir yar\u0131 iletken malzemedir.<\/p>","protected":false},"featured_media":2197,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}}},"product_brand":[],"product_cat":[729],"product_tag":[966,970,971,967,969,931,972,968,951,950,927,692,973],"class_list":{"0":"post-2196","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-wafer","7":"product_tag-2-inch-sic-wafer","8":"product_tag-350m-sic-wafer","9":"product_tag-650m-sic-wafer","10":"product_tag-6h-n-sic-substrate","11":"product_tag-cmp-polished-sic-wafer","12":"product_tag-n-type-sic-wafer","13":"product_tag-power-electronics-substrate","14":"product_tag-sic-single-crystal-wafer","15":"product_tag-sic-wafer-manufacturer","16":"product_tag-sic-wafer-supplier","17":"product_tag-silicon-carbide-wafer","18":"product_tag-wide-bandgap-semiconductor","19":"product_tag-zmsh-sic-wafer","20":"desktop-align-left","21":"tablet-align-left","22":"mobile-align-left","23":"ast-product-gallery-layout-horizontal-slider","24":"ast-product-tabs-layout-horizontal","26":"first","27":"instock","28":"shipping-taxable","29":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/tr\/wp-json\/wp\/v2\/product\/2196","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/tr\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/tr\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/tr\/wp-json\/wp\/v2\/comments?post=2196"}],"version-history":[{"count":2,"href":"https:\/\/www.zmsh-semitech.com\/tr\/wp-json\/wp\/v2\/product\/2196\/revisions"}],"predecessor-version":[{"id":2202,"href":"https:\/\/www.zmsh-semitech.com\/tr\/wp-json\/wp\/v2\/product\/2196\/revisions\/2202"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/tr\/wp-json\/wp\/v2\/media\/2197"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/tr\/wp-json\/wp\/v2\/media?parent=2196"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/tr\/wp-json\/wp\/v2\/product_brand?post=2196"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/tr\/wp-json\/wp\/v2\/product_cat?post=2196"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/tr\/wp-json\/wp\/v2\/product_tag?post=2196"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}