![\"4H-N](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/6_inch_silicon_carbide_sic_wafer_for_ar_glasses_mos_sbd2-300x300.webp\")
<\/p>\n6 in\u00e7lik 4H-N Silisyum Karb\u00fcr gofret, yeni nesil g\u00fc\u00e7 elektroni\u011fi cihazlar\u0131 i\u00e7in tasarlanm\u0131\u015f geni\u015f bant aral\u0131kl\u0131 bir yar\u0131 iletken alt tabakad\u0131r. Geleneksel silikon malzemelerle kar\u015f\u0131la\u015ft\u0131r\u0131ld\u0131\u011f\u0131nda SiC, \u00f6nemli \u00f6l\u00e7\u00fcde daha y\u00fcksek ar\u0131za elektrik alan\u0131 g\u00fcc\u00fc, \u00fcst\u00fcn termal iletkenlik ve y\u00fcksek s\u0131cakl\u0131k ve y\u00fcksek voltaj ko\u015fullar\u0131 alt\u0131nda istikrarl\u0131 performans sunar.<\/p>\n
Yakla\u015f\u0131k 3,26 eV'lik geni\u015f bant aral\u0131\u011f\u0131, SiC tabanl\u0131 cihazlar\u0131n daha d\u00fc\u015f\u00fck enerji kay\u0131plar\u0131n\u0131 korurken daha y\u00fcksek voltajlarda ve anahtarlama frekanslar\u0131nda \u00e7al\u0131\u015fmas\u0131n\u0131 sa\u011flar. Sonu\u00e7 olarak SiC, elektrikli ara\u00e7lar, yenilenebilir enerji sistemleri ve end\u00fcstriyel g\u00fc\u00e7 kaynaklar\u0131 dahil olmak \u00fczere y\u00fcksek verimli g\u00fc\u00e7 d\u00f6n\u00fc\u015ft\u00fcrme sistemleri i\u00e7in \u00f6nemli bir malzeme haline gelmi\u015ftir.<\/p>\n
6 in\u00e7lik (150 mm s\u0131n\u0131f\u0131) wafer format\u0131 \u015fu anda SiC cihaz \u00fcretimi i\u00e7in ana ak\u0131m end\u00fcstriyel standartt\u0131r. \u00dcretim verimi, s\u00fcre\u00e7 olgunlu\u011fu ve maliyet verimlili\u011fi aras\u0131nda optimum bir denge sa\u011flayarak hem seri \u00fcretim hem de ileri ara\u015ft\u0131rma uygulamalar\u0131 i\u00e7in uygun hale getirir.<\/p>\n
4H-SiC, uygun kristal simetrisi ve elektrik performans\u0131 nedeniyle g\u00fc\u00e7 elektroni\u011finde en yayg\u0131n kullan\u0131lan poli tiptir.<\/p>\n
Temel i\u00e7sel \u00f6zellikler \u015funlard\u0131r:<\/p>\n
Bu \u00f6zellikler SiC'yi y\u00fcksek g\u00fc\u00e7l\u00fc, y\u00fcksek verimli yar\u0131 iletken cihazlar i\u00e7in kritik bir malzeme haline getirmektedir.<\/p>\n
![\"6-\u0130n\u00e7](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/6_inch_silicon_carbide_sic_wafer_for_ar_glasses_mos_sbd4-300x300.webp\")
Kristal B\u00fcy\u00fctme ve \u00dcretim S\u00fcreci<\/h2>\nSiC gofretler tipik olarak, y\u0131\u011f\u0131n SiC kristal b\u00fcy\u00fcmesi i\u00e7in olgun bir end\u00fcstriyel s\u00fcre\u00e7 olan Fiziksel Buhar Ta\u015f\u0131ma (PVT) y\u00f6ntemi kullan\u0131larak \u00fcretilir.<\/p>\n
Bu i\u015flemde, y\u00fcksek safl\u0131ktaki SiC tozu 2000\u00b0C'nin \u00fczerindeki s\u0131cakl\u0131klarda s\u00fcblimle\u015ftirilir. Buhar faz\u0131 t\u00fcrleri dikkatle kontrol edilen termal gradyanlar alt\u0131nda ta\u015f\u0131n\u0131r ve bir tohum kristali \u00fczerinde yeniden kristalle\u015ftirilerek tek kristalli bir bukle olu\u015fturur.<\/p>\n
Kristal b\u00fcy\u00fcmesinden sonra malzeme de\u011fi\u015fime u\u011frar:<\/p>\n
Cihaz \u00fcretimi i\u00e7in, kontroll\u00fc doping konsantrasyonu ve kal\u0131nl\u0131\u011f\u0131 ile y\u00fcksek kaliteli epitaksiyel katmanlar olu\u015fturmak i\u00e7in ek bir Kimyasal Buhar Biriktirme (CVD) epitaksiyel i\u015flemi uygulanabilir.<\/p>\n
| M\u00fclkiyet<\/th>\n | Z S\u0131n\u0131f\u0131 (\u00dcretim S\u0131n\u0131f\u0131)<\/th>\n | D S\u0131n\u0131f\u0131 (M\u00fchendislik S\u0131n\u0131f\u0131)<\/th>\n<\/tr>\n<\/thead>\n |
|---|---|---|
| \u00c7ap<\/td>\n | 149,5 - 150,0 mm<\/td>\n | 149,5 - 150,0 mm<\/td>\n<\/tr>\n |
| \u00c7oklu Tip<\/td>\n | 4H-SiC<\/td>\n | 4H-SiC<\/td>\n<\/tr>\n |
| Kal\u0131nl\u0131k<\/td>\n | 350 \u00b1 15 \u00b5m<\/td>\n | 350 \u00b1 25 \u00b5m<\/td>\n<\/tr>\n |
| \u0130letkenlik Tipi<\/td>\n | N-tipi<\/td>\n | N-tipi<\/td>\n<\/tr>\n |
| Eksen D\u0131\u015f\u0131 A\u00e7\u0131<\/td>\n | 4,0\u00b0 y\u00f6n\u00fcnde \u00b1 0,5\u00b0<\/td>\n | 4,0\u00b0 y\u00f6n\u00fcnde \u00b1 0,5\u00b0<\/td>\n<\/tr>\n |
| Diren\u00e7lilik<\/td>\n | 0,015 - 0,024 \u03a9-cm<\/td>\n | 0,015 - 0,028 \u03a9-cm<\/td>\n<\/tr>\n |
| Mikro Boru Yo\u011funlu\u011fu<\/td>\n | \u2264 0,2 cm-\u00b2<\/td>\n | \u2264 15 cm-\u00b2<\/td>\n<\/tr>\n |
| Y\u00fczey P\u00fcr\u00fczl\u00fcl\u00fc\u011f\u00fc (Ra)<\/td>\n | \u2264 1 nm<\/td>\n | \u2264 1 nm<\/td>\n<\/tr>\n |
| CMP P\u00fcr\u00fczl\u00fcl\u00fc\u011f\u00fc<\/td>\n | \u2264 0,2 nm<\/td>\n | \u2264 0,5 nm<\/td>\n<\/tr>\n |
| LTV<\/td>\n | \u2264 2,5 \u00b5m<\/td>\n | \u2264 5 \u00b5m<\/td>\n<\/tr>\n |
| TTV<\/td>\n | \u2264 6 \u00b5m<\/td>\n | \u2264 15 \u00b5m<\/td>\n<\/tr>\n |
| Yay<\/td>\n | \u2264 25 \u00b5m<\/td>\n | \u2264 40 \u00b5m<\/td>\n<\/tr>\n |
| \u00c7\u00f6zg\u00fc<\/td>\n | \u2264 35 \u00b5m<\/td>\n | \u2264 60 \u00b5m<\/td>\n<\/tr>\n |
| Kenar D\u0131\u015flama<\/td>\n | 3 mm<\/td>\n | 3 mm<\/td>\n<\/tr>\n |
| Paketleme<\/td>\n | Kaset \/ Tekli gofret<\/td>\n | Kaset \/ Tekli gofret<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
|
![\"6-\u0130n\u00e7](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/6_inch_silicon_carbide_sic_wafer_for_ar_glasses_mos_sbd1-300x300.webp\")
Kalite Kontrol ve Denetim<\/h2>\n