{"id":1968,"date":"2026-03-23T06:01:20","date_gmt":"2026-03-23T06:01:20","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=1968"},"modified":"2026-03-23T06:03:52","modified_gmt":"2026-03-23T06:03:52","slug":"lpcvd-oxidation-furnace","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/tr\/product\/lpcvd-oxidation-furnace\/","title":{"rendered":"6\/8\/12-\u0130n\u00e7 LPCVD Oksidasyon F\u0131r\u0131n\u0131 Geli\u015fmi\u015f Yar\u0131 \u0130letken \u00dcretimi i\u00e7in Y\u00fcksek D\u00fczg\u00fcnl\u00fckl\u00fc \u0130nce Film Biriktirme"},"content":{"rendered":"

6\/8\/12-\u0130n\u00e7 LPCVD Oksidasyon F\u0131r\u0131n\u0131, hassas ve homojen ince film biriktirme i\u00e7in tasarlanm\u0131\u015f son teknoloji \u00fcr\u00fcn\u00fc bir yar\u0131 iletken \u00fcretim arac\u0131d\u0131r. G\u00fc\u00e7 yar\u0131 iletkenleri, geli\u015fmi\u015f substratlar ve di\u011fer y\u00fcksek hassasiyetli uygulamalar i\u00e7in tutarl\u0131 performans sa\u011flayarak, gofretler \u00fczerinde y\u00fcksek kaliteli polisilikon, silikon nitr\u00fcr ve silikon oksit katmanlar\u0131n\u0131n b\u00fcy\u00fct\u00fclmesinde yayg\u0131n olarak uygulan\u0131r.<\/p>\n

Bu ekipman, ola\u011fan\u00fcst\u00fc ince film homojenli\u011fi ve y\u00fcksek verim elde etmek i\u00e7in geli\u015fmi\u015f d\u00fc\u015f\u00fck bas\u0131n\u00e7l\u0131 biriktirme teknolojisi, ak\u0131ll\u0131 s\u0131cakl\u0131k kontrol\u00fc ve ultra temiz proses tasar\u0131m\u0131n\u0131 bir araya getirir. Dikey reakt\u00f6r konfig\u00fcrasyonu verimli toplu i\u015flemeye olanak sa\u011flarken, termal biriktirme i\u015flemi plazma kaynakl\u0131 hasar\u0131 \u00f6nler, bu da onu kap\u0131 dielektrik olu\u015fumu, gerilim tamponlama katmanlar\u0131 ve koruyucu oksitler gibi kritik i\u015flemler i\u00e7in ideal hale getirir.<\/p>\n

\"\"<\/p>\n

\n

Temel Avantajlar<\/strong><\/span><\/h2>\n
    \n
  • Y\u00fcksek D\u00fczg\u00fcnl\u00fckte \u0130nce Film Biriktirme:<\/strong> D\u00fc\u015f\u00fck bas\u0131n\u00e7l\u0131 ortam (0,1-10 Torr), y\u00fcksek performansl\u0131 cihaz \u00fcretimi i\u00e7in kritik olan \u00b11,5%'lik gofretten gofrete ve gofret i\u00e7i homojenli\u011fi sa\u011flar.<\/li>\n
  • Dikey Reakt\u00f6r Tasar\u0131m\u0131:<\/strong> Parti ba\u015f\u0131na 150-200 gofret i\u015fleyerek end\u00fcstriyel \u00f6l\u00e7ekte yar\u0131 iletken \u00fcretimi i\u00e7in verimi ve \u00fcretim verimlili\u011fini art\u0131r\u0131r.<\/li>\n
  • Termal Biriktirme S\u00fcreci (500-900\u00b0C):<\/strong> Hassas alt tabakalar\u0131 korumak ve y\u00fcksek film kalitesini s\u00fcrd\u00fcrmek i\u00e7in nazik, plazmas\u0131z biriktirme sa\u011flar.<\/li>\n
  • Ak\u0131ll\u0131 S\u0131cakl\u0131k Kontrol\u00fc:<\/strong> Kararl\u0131, tekrarlanabilir sonu\u00e7lar i\u00e7in \u00b11\u00b0C hassasiyetle ger\u00e7ek zamanl\u0131 izleme ve ayarlama.<\/li>\n
  • Ultra Temiz Proses Odas\u0131:<\/strong> SiC ve di\u011fer geli\u015fmi\u015f yonga plakas\u0131 malzemelerini destekleyerek partik\u00fcl kontaminasyonunu en aza indirir.<\/li>\n
  • \u00d6zelle\u015ftirilebilir Yap\u0131land\u0131rma:<\/strong> Esnek tasar\u0131m, kuru veya \u0131slak oksidasyon ve farkl\u0131 gofret boyutlar\u0131 dahil olmak \u00fczere \u00e7e\u015fitli proses gereksinimlerini kar\u015f\u0131lar.<\/li>\n<\/ul>\n

    Teknik \u00d6zellikler<\/strong><\/span><\/h2>\n
    \n
    \n\n\n\n\n\n\n\n\n\n\n\n\n\n
    \u00d6zellik<\/th>\n\u015eartname<\/th>\n<\/tr>\n<\/thead>\n
    Gofret Boyutu<\/td>\n6\/8\/12 \u0130n\u00e7<\/td>\n<\/tr>\n
    Uyumlu Malzemeler<\/td>\nPolisilikon, Silisyum Nitr\u00fcr, Silisyum Oksit<\/td>\n<\/tr>\n
    Oksidasyon Tipi<\/td>\nKuru Oksijen \/ Islak Oksijen (DCE, HCL)<\/td>\n<\/tr>\n
    Proses S\u0131cakl\u0131k Aral\u0131\u011f\u0131<\/td>\n500\u00b0C-900\u00b0C<\/td>\n<\/tr>\n
    Sabit S\u0131cakl\u0131k B\u00f6lgesi<\/td>\n\u2265800 mm<\/td>\n<\/tr>\n
    S\u0131cakl\u0131k Kontrol Do\u011frulu\u011fu<\/td>\n\u00b11\u00b0C<\/td>\n<\/tr>\n
    Par\u00e7ac\u0131k Kontrol\u00fc<\/td>\n0,32\u03bcm), 0,32\u03bcm), 0,226\u03bcm)<\/td>\n<\/tr>\n
    Film Kal\u0131nl\u0131\u011f\u0131<\/td>\nNIT1500 \u00b150 \u00c5<\/td>\n<\/tr>\n
    Tekd\u00fczelik<\/td>\nWafer i\u00e7inde <2,5%, wafer'dan wafer'a <2,5%, partiden partiye <2%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

    \u00dcr\u00fcn \u00d6zellikleri<\/strong><\/span><\/h2>\n
      \n
    • Otomatik gofret i\u015fleme, y\u00fcksek g\u00fcvenlik ve operasyonel verimlilik sa\u011flar.<\/li>\n
    • Ultra temiz proses haznesi kontaminasyon riskini azalt\u0131r ve tutarl\u0131 film kalitesini korur.<\/li>\n
    • \u00dcst\u00fcn film kal\u0131nl\u0131\u011f\u0131 homojenli\u011fi, geli\u015fmi\u015f d\u00fc\u011f\u00fcm \u00fcretimini destekler.<\/li>\n
    • Ger\u00e7ek zamanl\u0131 ak\u0131ll\u0131 s\u0131cakl\u0131k ve bas\u0131n\u00e7 kontrol\u00fc, hassas proses ayarlamalar\u0131na olanak tan\u0131r.<\/li>\n
    • SiC wafer deste\u011fi s\u00fcrt\u00fcnmeyi ve partik\u00fcl olu\u015fumunu azaltarak wafer \u00f6mr\u00fcn\u00fc uzat\u0131r.<\/li>\n
    • Mod\u00fcler tasar\u0131m, farkl\u0131 uygulamalar ve proses ihtiya\u00e7lar\u0131 i\u00e7in \u00f6zelle\u015ftirme sa\u011flar.<\/li>\n<\/ul>\n

      Biriktirme S\u00fcreci Prensibi\"\"<\/strong><\/span><\/h2>\n
        \n
      1. Gaz Tan\u0131t\u0131m\u0131:<\/strong> Reaktif gazlar d\u00fc\u015f\u00fck bas\u0131n\u00e7 ko\u015fullar\u0131 alt\u0131nda (0,25-1 Torr) t\u00fcpe verilir.<\/li>\n
      2. Y\u00fczey Dif\u00fczyonu:<\/strong> Molek\u00fcller yonga plakas\u0131 y\u00fczeyi boyunca serbest\u00e7e da\u011f\u0131larak homojen bir kaplama sa\u011flar.<\/li>\n
      3. Adsorpsiyon:<\/strong> Reaktifler kimyasal reaksiyondan \u00f6nce gofret y\u00fczeyine yap\u0131\u015f\u0131r.<\/li>\n
      4. Kimyasal Reaksiyon:<\/strong> Termal ayr\u0131\u015ft\u0131rma, istenen ince filmi do\u011frudan alt tabaka \u00fczerinde olu\u015fturur.<\/li>\n
      5. Yan \u00dcr\u00fcn Giderimi:<\/strong> Reaktif olmayan gazlar, safl\u0131\u011f\u0131 korumak ve paraziti \u00f6nlemek i\u00e7in tahliye edilir.<\/li>\n
      6. Film Olu\u015fumu:<\/strong> Reaksiyon \u00fcr\u00fcnleri kademeli olarak birikerek d\u00fczg\u00fcn, kararl\u0131 bir ince film tabakas\u0131 olu\u015fturur.<\/li>\n<\/ol>\n

        Uygulamalar<\/strong><\/span><\/h2>\n
          \n
        • Koruyucu Oksit Katman\u0131:<\/strong> Silikon gofretleri kirlenmeye kar\u015f\u0131 korur ve doping i\u015flemleri s\u0131ras\u0131nda iyon kanalizasyonunu azalt\u0131r.<\/li>\n<\/ul>\n

          \"\"<\/p>\n

            \n
          • Ped Oksit Katman\u0131:<\/strong> Silikon ve silikon nitr\u00fcr katmanlar\u0131 aras\u0131nda bir gerilim tamponu g\u00f6revi g\u00f6rerek gofret \u00e7atlamas\u0131n\u0131 \u00f6nler ve verimi art\u0131r\u0131r.<\/li>\n<\/ul>\n

            \"\"<\/p>\n

              \n
            • Kap\u0131 Oksit Katman\u0131:<\/strong> MOS yap\u0131lar\u0131nda dielektrik katman sa\u011flayarak hassas ak\u0131m iletimi ve alan etkisi kontrol\u00fc sa\u011flar.<\/li>\n<\/ul>\n

              \"\"<\/p>\n

              Sistem Konfig\u00fcrasyonlar\u0131<\/strong><\/span><\/h2>\n
                \n
              • Dikey LPCVD:<\/strong> Proses gazlar\u0131 yukar\u0131dan a\u015fa\u011f\u0131ya do\u011fru akarak bir partideki t\u00fcm gofretler \u00fczerinde e\u015fit birikim sa\u011flar.<\/li>\n<\/ul>\n

                \"\"<\/p>\n

                  \n
                • Yatay LPCVD:<\/strong> Gazlar alt tabakalar\u0131n uzunlu\u011fu boyunca akar, s\u00fcrekli, y\u00fcksek hacimli \u00fcretim i\u00e7in uygundur, ancak biriktirme kal\u0131nl\u0131\u011f\u0131 giri\u015f taraf\u0131n\u0131n yak\u0131n\u0131nda biraz de\u011fi\u015febilir.<\/li>\n<\/ul>\n

                  \"\"<\/p>\n

                  S\u0131k\u00e7a Sorulan Sorular<\/strong><\/span><\/h2>\n

                  S1: LPCVD \u00f6ncelikli olarak ne i\u00e7in kullan\u0131l\u0131r?<\/strong>
                  C: LPCVD, yar\u0131 iletken \u00fcretiminde polisilikon, silikon nitr\u00fcr ve silikon oksit biriktirme i\u00e7in yayg\u0131n olarak kullan\u0131lan, geli\u015fmi\u015f cihaz \u00fcretimi i\u00e7in tek tip ve y\u00fcksek kaliteli filmler sa\u011flayan d\u00fc\u015f\u00fck bas\u0131n\u00e7l\u0131 bir ince film biriktirme i\u015flemidir.<\/p>\n

                  S2: LPCVD'nin PECVD'den fark\u0131 nedir?<\/strong>
                  C: LPCVD, y\u00fcksek safl\u0131kta filmler \u00fcretmek i\u00e7in d\u00fc\u015f\u00fck bas\u0131n\u00e7 alt\u0131nda termal aktivasyona dayan\u0131rken, PECVD, genellikle biraz daha d\u00fc\u015f\u00fck film kalitesiyle daha h\u0131zl\u0131 biriktirme i\u00e7in daha d\u00fc\u015f\u00fck s\u0131cakl\u0131klarda plazma kullan\u0131r.<\/p>\n

                  S3: Hangi wafer boyutlar\u0131 ve malzemeleri bu LPCVD Oksidasyon F\u0131r\u0131n\u0131 ile uyumludur?<\/strong>
                  C: Bu f\u0131r\u0131n 6 in\u00e7, 8 in\u00e7 ve 12 in\u00e7 gofretleri destekler ve polisilikon, silikon nitr\u00fcr, silikon oksit ve SiC gofretlerle uyumludur ve \u00e7e\u015fitli yar\u0131 iletken uygulamalar\u0131 i\u00e7in esneklik sa\u011flar.<\/p>\n

                  S4: LPCVD Oksidasyon F\u0131r\u0131n\u0131 belirli prosesler i\u00e7in \u00f6zelle\u015ftirilebilir mi?<\/strong>
                  C: Evet, sistem ayarlanabilir s\u0131cakl\u0131k b\u00f6lgeleri, gaz ak\u0131\u015f kontrol\u00fc ve oksidasyon modlar\u0131 (kuru veya \u0131slak) dahil olmak \u00fczere mod\u00fcler konfig\u00fcrasyonlar sunarak hem ara\u015ft\u0131rma hem de end\u00fcstriyel \u00f6l\u00e7ekte \u00fcretim i\u00e7in \u00e7e\u015fitli proses gereksinimlerini kar\u015f\u0131lamas\u0131na olanak tan\u0131r.<\/p>","protected":false},"excerpt":{"rendered":"

                  6\/8\/12-\u0130n\u00e7 LPCVD (D\u00fc\u015f\u00fck Bas\u0131n\u00e7l\u0131 Kimyasal Buhar Biriktirme) Oksidasyon F\u0131r\u0131n\u0131, hassas ve homojen ince film biriktirme i\u00e7in tasarlanm\u0131\u015f son teknoloji \u00fcr\u00fcn\u00fc bir yar\u0131 iletken \u00fcretim arac\u0131d\u0131r. G\u00fc\u00e7 yar\u0131 iletkenleri, geli\u015fmi\u015f alt tabakalar ve di\u011fer y\u00fcksek hassasiyetli uygulamalar i\u00e7in tutarl\u0131 performans sa\u011flayarak, gofretler \u00fczerinde y\u00fcksek kaliteli polisilikon, silikon nitr\u00fcr ve silikon oksit katmanlar\u0131n\u0131n b\u00fcy\u00fct\u00fclmesinde yayg\u0131n olarak uygulan\u0131r.<\/p>","protected":false},"featured_media":1969,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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