![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/01\/pl204262693-sic_single_crystal_resistance_heating_crystal_growth_furnace_for_6inch_8inch_12inch_sic_wafers_manufacture-300x199.webp\")
<\/p>\n<\/p>\n
ZMSH SiC Tek Kristal Diren\u00e7li Is\u0131tma B\u00fcy\u00fctme F\u0131r\u0131n\u0131, 6 in\u00e7, 8 in\u00e7 ve 12 in\u00e7 SiC gofret \u00fcretimini destekleyen, b\u00fcy\u00fck \u00e7apl\u0131 silisyum karb\u00fcr tek kristal \u00fcretimi i\u00e7in \u00f6zel olarak tasarlanm\u0131\u015f y\u00fcksek s\u0131cakl\u0131kl\u0131 bir kristal b\u00fcy\u00fctme sistemidir.<\/p>\n
<\/p>\n
tur.<\/p>\n
F\u0131r\u0131n, hassas diren\u00e7li \u0131s\u0131tma kontrol\u00fc, kararl\u0131 termal alan da\u011f\u0131l\u0131m\u0131, y\u00fcksek vakumlu ortam y\u00f6netimi ve do\u011fru bas\u0131n\u00e7 d\u00fczenlemesini entegre eden Fiziksel Buhar Ta\u015f\u0131n\u0131m\u0131 (PVT) kristal b\u00fcy\u00fctme prensibine g\u00f6re tasarlanm\u0131\u015ft\u0131r.
Bu yap\u0131land\u0131rma, geli\u015fmi\u015f g\u00fc\u00e7 yar\u0131 iletken ve elektronik cihaz uygulamalar\u0131 i\u00e7in uygun y\u00fcksek safl\u0131kta, d\u00fc\u015f\u00fck kusur yo\u011funluklu SiC tek kristallerinin b\u00fcy\u00fct\u00fclmesini sa\u011flar.<\/p>\n
Sistem, b\u00fcy\u00fck \u00f6l\u00e7ekli SiC kristal b\u00fcy\u00fctme ortamlar\u0131nda proses kararl\u0131l\u0131\u011f\u0131, tekrarlanabilirlik ve uzun vadeli operasyonel g\u00fcvenilirlik sa\u011flayarak end\u00fcstriyel \u00fcretim gereksinimlerini kar\u015f\u0131lamak \u00fczere geli\u015ftirilmi\u015ftir.<\/p>\n
\n
<\/p>\n
F\u0131r\u0131n, e\u015fit eksenel ve radyal s\u0131cakl\u0131k da\u011f\u0131l\u0131m\u0131 elde etmek i\u00e7in \u00e7ok b\u00f6lgeli bir diren\u00e7li \u0131s\u0131tma yap\u0131s\u0131na sahiptir. Bu, termal gradyanlar\u0131 en aza indirir, i\u00e7 gerilimi azalt\u0131r ve b\u00fcy\u00fcme i\u015flemi s\u0131ras\u0131nda kristal yap\u0131sal b\u00fct\u00fcnl\u00fc\u011f\u00fcn\u00fc geli\u015ftirir.<\/p>\n
2500\u00b0C'ye kadar maksimum \u00e7al\u0131\u015fma s\u0131cakl\u0131\u011f\u0131<\/p>\n<\/li>\n
S\u0131cakl\u0131k kontrol hassasiyeti: \u00b11\u00b0C<\/p>\n<\/li>\n
Geni\u015f bas\u0131n\u00e7 d\u00fczenleme aral\u0131\u011f\u0131: 1-700 mbar<\/p>\n<\/li>\n<\/ul>\n
Bu parametreler, SiC b\u00fcy\u00fcmesinde kontroll\u00fc s\u00fcblimasyon, buhar ta\u015f\u0131n\u0131m\u0131 ve kristal yeniden kristalle\u015fmesi i\u00e7in gerekli olan kararl\u0131 bir termodinamik ortam sa\u011flar.<\/p>\n
900 mm pota \u00e7ap\u0131na sahip olan sistem, yeni nesil 8 in\u00e7 ve 12 in\u00e7 SiC k\u00fcl\u00e7elerinin b\u00fcy\u00fcmesini destekleyerek \u00fcreticilerin \u00fcretimi \u00f6l\u00e7eklendirmesini sa\u011flarken verimi ve yonga plakas\u0131 tutarl\u0131l\u0131\u011f\u0131n\u0131 da art\u0131r\u0131yor.<\/p>\n
F\u0131r\u0131n, d\u00fc\u015f\u00fck s\u0131z\u0131nt\u0131l\u0131, y\u00fcksek vakumlu bir b\u00fcy\u00fcme odas\u0131 sa\u011flayarak kontaminasyon riskini azalt\u0131r, kristal safl\u0131\u011f\u0131n\u0131 art\u0131r\u0131r ve uzun s\u00fcreli istikrarl\u0131 \u00e7al\u0131\u015fma sa\u011flar.<\/p>\n
![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/01\/pl204262670-sic_single_crystal_resistance_heating_crystal_growth_furnace_for_6inch_8inch_12inch_sic_wafers_manufacture-300x300.webp\")
<\/h2>\n<\/p>\n
G\u00fc\u00e7 yar\u0131 iletken alt tabakalar\u0131<\/p>\n<\/li>\n
Elektrikli ara\u00e7 g\u00fc\u00e7 mod\u00fclleri<\/p>\n<\/li>\n
Y\u00fcksek voltajl\u0131 MOSFET ve diyot cihazlar\u0131<\/p>\n<\/li>\n
Yenilenebilir enerji g\u00fc\u00e7 d\u00f6n\u00fc\u015f\u00fcm sistemleri<\/p>\n<\/li>\n
Y\u00fcksek frekansl\u0131 ve RF elektronik bile\u015fenler<\/p>\n<\/li>\n
End\u00fcstriyel g\u00fc\u00e7 elektroni\u011fi<\/p>\n<\/li>\n<\/ul>\n
<\/p>\n
<\/p>\n
| Hay\u0131r.<\/th>\n | \u015eartname<\/th>\n | Detaylar<\/th>\n<\/tr>\n<\/thead>\n |
|---|---|---|
| 1<\/td>\n | Model<\/td>\n | PVT-RS-40<\/td>\n<\/tr>\n |
| 2<\/td>\n | F\u0131r\u0131n Boyutlar\u0131 (U \u00d7 G \u00d7 Y)<\/td>\n | 2500 \u00d7 2400 \u00d7 3456 mm<\/td>\n<\/tr>\n |
| 3<\/td>\n | Pota \u00c7ap\u0131<\/td>\n | 900 mm<\/td>\n<\/tr>\n |
| 4<\/td>\n | Nihai Vakum Bas\u0131nc\u0131<\/td>\n | 6 \u00d7 10-\u2074 Pa (1,5 saat vakumdan sonra)<\/td>\n<\/tr>\n |
| 5<\/td>\n | Ka\u00e7ak Oran\u0131<\/td>\n | \u22645 Pa \/ 12 saat (f\u0131r\u0131nlama)<\/td>\n<\/tr>\n |
| 6<\/td>\n | Rotasyon Mili \u00c7ap\u0131<\/td>\n | 50 mm<\/td>\n<\/tr>\n |
| 7<\/td>\n | D\u00f6n\u00fc\u015f H\u0131z\u0131<\/td>\n | 0,5-5 rpm<\/td>\n<\/tr>\n |
| 8<\/td>\n | Is\u0131tma Y\u00f6ntemi<\/td>\n | Elektrikli rezistansl\u0131 \u0131s\u0131tma<\/td>\n<\/tr>\n |
| 9<\/td>\n | Maksimum F\u0131r\u0131n S\u0131cakl\u0131\u011f\u0131<\/td>\n | 2500\u00b0C<\/td>\n<\/tr>\n |
| 10<\/td>\n | Is\u0131tma G\u00fcc\u00fc<\/td>\n | 40 kW \u00d7 2 + 20 kW<\/td>\n<\/tr>\n |
| 11<\/td>\n | S\u0131cakl\u0131k \u00d6l\u00e7\u00fcm\u00fc<\/td>\n | \u00c7ift renkli k\u0131z\u0131l\u00f6tesi pirometre<\/td>\n<\/tr>\n |
| 12<\/td>\n | S\u0131cakl\u0131k Aral\u0131\u011f\u0131<\/td>\n | 900-3000\u00b0C<\/td>\n<\/tr>\n |
| 13<\/td>\n | S\u0131cakl\u0131k Do\u011frulu\u011fu<\/td>\n | \u00b11\u00b0C<\/td>\n<\/tr>\n |
| 14<\/td>\n | Bas\u0131n\u00e7 Aral\u0131\u011f\u0131<\/td>\n | 1-700 mbar<\/td>\n<\/tr>\n |
| 15<\/td>\n | Bas\u0131n\u00e7 Kontrol Do\u011frulu\u011fu<\/td>\n | \u00b10,5% tam \u00f6l\u00e7ek<\/td>\n<\/tr>\n |
| 16<\/td>\n | Operasyon T\u00fcr\u00fc<\/td>\n | Alttan y\u00fckleme, manuel veya otomatik g\u00fcvenlik modlar\u0131<\/td>\n<\/tr>\n |
| 17<\/td>\n | Opsiyonel Konfig\u00fcrasyonlar<\/td>\n | \u00c7ok b\u00f6lgeli \u0131s\u0131tma, \u00e7ift s\u0131cakl\u0131k izleme<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<\/h2>\n |