{"id":2342,"date":"2026-04-22T05:35:46","date_gmt":"2026-04-22T05:35:46","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2342"},"modified":"2026-04-22T07:27:32","modified_gmt":"2026-04-22T07:27:32","slug":"high-efficiency-ai80hchigh-beam-ion-implantation-equipment-for-advanced-silicon-wafer-doping","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/th\/product\/high-efficiency-ai80hchigh-beam-ion-implantation-equipment-for-advanced-silicon-wafer-doping\/","title":{"rendered":"High Efficiency Ai80HC(High Beam) Ion Implantation Equipment for Advanced Silicon Wafer Doping"},"content":{"rendered":"<p data-start=\"153\" data-end=\"528\"><img fetchpriority=\"high\" decoding=\"async\" class=\"alignright wp-image-2343 size-medium\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-300x300.png\" alt=\"High Efficiency Ai80HC(High Beam) Ion Implantation Equipment for Advanced Silicon Wafer Doping\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>The Ai80HC (High Beam) Ion Implantation Equipment\u00a0is a high-current ion implanter specifically designed for 12-inch silicon wafer semiconductor production lines. It is engineered for advanced precision doping processes in modern integrated circuit manufacturing, delivering stable beam performance, high process repeatability, and excellent dose control accuracy.<\/p>\n<p data-start=\"530\" data-end=\"891\">The system operates within a wide energy range of 0.5 keV to 80 keV, enabling flexible implantation conditions for both shallow and medium-depth junction engineering. It supports multiple implantation species including \u00b9\u00b9B\u207a, \u2074\u2079BF\u2082\u207a, \u00b3\u00b9P\u207a, \u2077\u2075As\u207a, \u00b9\u2074N\u207a, and \u00b9H\u207a, making it suitable for a wide range of CMOS and advanced logic device fabrication processes.<\/p>\n<p data-start=\"893\" data-end=\"1243\">With an implantation angle range of 0\u00b0 to 45\u00b0 and a high angle accuracy of \u2264 0.1\u00b0, the system ensures precise control of dopant distribution and junction profile engineering. Combined with beam parallelism of \u2264 0.3\u00b0 and uniformity of \u2264 1% (1\u03c3), Ai80HC (High Beam) delivers consistent wafer-to-wafer and within-wafer process stability.<\/p>\n<p data-start=\"1245\" data-end=\"1496\">Designed for high-efficiency production environments, the system achieves a throughput of \u2265 200 wafers per hour (WPH) while maintaining strict process stability, making it suitable for LSI-compatible advanced semiconductor manufacturing lines.<\/p>\n<h2 data-section-id=\"12rj9ab\" data-start=\"1101\" data-end=\"1126\">System Architecture<\/h2>\n<p data-start=\"1128\" data-end=\"1199\">The Ai80HC adopts a mature and reliable beamline design, consisting of:<\/p>\n<ul data-start=\"1201\" data-end=\"1436\">\n<li data-section-id=\"1kfcth9\" data-start=\"1201\" data-end=\"1215\">Ion Source<\/li>\n<li data-section-id=\"1r1hm7c\" data-start=\"1216\" data-end=\"1237\">Extraction System<\/li>\n<li data-section-id=\"1twz66q\" data-start=\"1238\" data-end=\"1255\">Mass Analyzer<\/li>\n<li data-section-id=\"ywuuxz\" data-start=\"1256\" data-end=\"1280\">Magnetic Lens System<\/li>\n<li data-section-id=\"1s57tik\" data-start=\"1281\" data-end=\"1302\">Acceleration Tube<\/li>\n<li data-section-id=\"pg1cgy\" data-start=\"1303\" data-end=\"1336\">Electrostatic Scanning System<\/li>\n<li data-section-id=\"1iwk7km\" data-start=\"1337\" data-end=\"1367\">Parallel Beam Shaping Lens<\/li>\n<li data-section-id=\"1cur4hx\" data-start=\"1368\" data-end=\"1401\">Process Chamber (End Station)<\/li>\n<li data-section-id=\"qtlnqu\" data-start=\"1402\" data-end=\"1436\">Wafer Cassette \/ Loader System<\/li>\n<\/ul>\n<p data-start=\"1438\" data-end=\"1458\">It is equipped with:<\/p>\n<ul data-start=\"1459\" data-end=\"1572\">\n<li data-section-id=\"1jzaueb\" data-start=\"1459\" data-end=\"1494\">Electrostatic wafer chuck stage<\/li>\n<li data-section-id=\"1s8wavu\" data-start=\"1495\" data-end=\"1530\">Long-life ion source technology<\/li>\n<li data-section-id=\"6mih95\" data-start=\"1531\" data-end=\"1572\">Fully automated wafer handling system<\/li>\n<\/ul>\n<p data-start=\"1574\" data-end=\"1686\">This architecture ensures high beam stability, reduced maintenance downtime, and improved process repeatability.<\/p>\n<p data-start=\"1574\" data-end=\"1686\"><img decoding=\"async\" class=\"aligncenter wp-image-2371 size-large\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-1024x388.png\" alt=\"\" width=\"1024\" height=\"388\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-1024x388.png 1024w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-300x114.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-768x291.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-18x7.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-600x227.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs.png 1216w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/><\/p>\n<h2 data-section-id=\"106914\" data-start=\"1693\" data-end=\"1727\">Key Technical Specifications<\/h2>\n<table>\n<thead>\n<tr>\n<th>\u0e23\u0e32\u0e22\u0e01\u0e32\u0e23<\/th>\n<th>\u0e02\u0e49\u0e2d\u0e01\u0e33\u0e2b\u0e19\u0e14<\/th>\n<\/tr>\n<\/thead>\n<tbody>\n<tr>\n<td>\u0e02\u0e19\u0e32\u0e14\u0e40\u0e27\u0e40\u0e1f\u0e2d\u0e23\u0e4c<\/td>\n<td>12 inch<\/td>\n<\/tr>\n<tr>\n<td>Energy Range<\/td>\n<td>0.5 \u2013 80 keV<\/td>\n<\/tr>\n<tr>\n<td>Implanted Elements<\/td>\n<td>\u00b9\u00b9B\u207a, \u2074\u2079BF\u2082\u207a, \u00b3\u00b9P\u207a, \u2077\u2075As\u207a, \u00b9\u2074N\u207a, \u00b9H\u207a<\/td>\n<\/tr>\n<tr>\n<td>Implant Angle<\/td>\n<td>0\u00b0 \u2013 45\u00b0<\/td>\n<\/tr>\n<tr>\n<td>Angle Accuracy<\/td>\n<td>\u2264 0.1\u00b0<\/td>\n<\/tr>\n<tr>\n<td>Dose Range<\/td>\n<td>5E11 \u2013 1E17 ions\/cm\u00b2<\/td>\n<\/tr>\n<tr>\n<td>Beam Stability<\/td>\n<td>\u2264 10% \/ hour (within 60 minutes; beam interruption and arcing \u2264 1 time)<\/td>\n<\/tr>\n<tr>\n<td>Beam Parallelism<\/td>\n<td>\u2264 0.3\u00b0<\/td>\n<\/tr>\n<tr>\n<td>Throughput (WPH)<\/td>\n<td>\u2265 200 wafers\/hour<\/td>\n<\/tr>\n<tr>\n<td>Uniformity (1\u03c3)<\/td>\n<td>\u2264 1%<\/td>\n<\/tr>\n<tr>\n<td>Repeatability (1\u03c3)<\/td>\n<td>\u2264 1%<\/td>\n<\/tr>\n<tr>\n<td>Process Compatibility<\/td>\n<td>Compatible with LSI process<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<h2 data-section-id=\"yb78ly\" data-start=\"2475\" data-end=\"2506\">\u0e04\u0e38\u0e13\u0e2a\u0e21\u0e1a\u0e31\u0e15\u0e34\u0e40\u0e14\u0e48\u0e19\u0e41\u0e25\u0e30\u0e02\u0e49\u0e2d\u0e44\u0e14\u0e49\u0e40\u0e1b\u0e23\u0e35\u0e22\u0e1a<\/h2>\n<h3 data-section-id=\"13hha2k\" data-start=\"2508\" data-end=\"2541\">1. Intelligent Control System<\/h3>\n<p data-start=\"2542\" data-end=\"2706\">Equipped with a visualized and intelligent software platform, enabling simplified operation, rapid fault diagnosis, and high system stability during production.<\/p>\n<h3 data-section-id=\"1cy4f9q\" data-start=\"2713\" data-end=\"2740\">2. Long-Life Ion Source<\/h3>\n<p data-start=\"2741\" data-end=\"2863\">Adopts advanced ion source design with a lifespan of \u2265500 hours, significantly reducing downtime and maintenance cost.<\/p>\n<h3 data-section-id=\"4euk5j\" data-start=\"2870\" data-end=\"2903\">3. Beam Diagnostic Capability<\/h3>\n<p data-start=\"2904\" data-end=\"2988\">Integrated 2D beam profile measurement system, capable of accurately monitoring:<\/p>\n<ul data-start=\"2989\" data-end=\"3019\">\n<li data-section-id=\"1ct5xfp\" data-start=\"2989\" data-end=\"3003\">Beam width<\/li>\n<li data-section-id=\"1vm2uvw\" data-start=\"3004\" data-end=\"3019\">Beam height<\/li>\n<\/ul>\n<p data-start=\"3021\" data-end=\"3092\">This improves implantation accuracy and enhances process repeatability.<\/p>\n<h3 data-section-id=\"qq9ajq\" data-start=\"3099\" data-end=\"3132\">4. High Production Efficiency<\/h3>\n<p data-start=\"3133\" data-end=\"3310\">The Ai80HC delivers a throughput performance of more than 1.5\u00d7 higher than conventional systems, making it suitable for high-volume semiconductor manufacturing environments.<\/p>\n<h3 data-section-id=\"1h2ge5m\" data-start=\"3317\" data-end=\"3357\">5. Advanced Pattern Implant Function<\/h3>\n<p data-start=\"3358\" data-end=\"3429\">Supports patterned ion implantation, enabling dose distribution in:<\/p>\n<ul data-start=\"3430\" data-end=\"3488\">\n<li data-section-id=\"fqh2r6\" data-start=\"3430\" data-end=\"3450\">Circular regions<\/li>\n<li data-section-id=\"1aoby05\" data-start=\"3451\" data-end=\"3488\">Quadrant-based wafer segmentation<\/li>\n<\/ul>\n<p data-start=\"3490\" data-end=\"3502\">This allows:<\/p>\n<ul data-start=\"3503\" data-end=\"3617\">\n<li data-section-id=\"chxy3y\" data-start=\"3503\" data-end=\"3552\">Multiple process conditions on a single wafer<\/li>\n<li data-section-id=\"z1xkzj\" data-start=\"3553\" data-end=\"3589\">Reduced process development cost<\/li>\n<li data-section-id=\"15uh0gh\" data-start=\"3590\" data-end=\"3617\">Improved R&amp;D efficiency<\/li>\n<\/ul>\n<p data-start=\"3619\" data-end=\"3780\">Example: A single wafer can simultaneously receive four different implantation conditions across four quadrants, significantly accelerating process optimization.<\/p>\n<h2 data-section-id=\"18zz1hm\" data-start=\"3787\" data-end=\"3810\">\u0e01\u0e32\u0e23\u0e2a\u0e21\u0e31\u0e04\u0e23<\/h2>\n<ul data-start=\"3812\" data-end=\"4005\">\n<li data-section-id=\"16inq9u\" data-start=\"3812\" data-end=\"3839\">CMOS device fabrication<\/li>\n<li data-section-id=\"xjegvm\" data-start=\"3840\" data-end=\"3875\">Advanced logic IC manufacturing<\/li>\n<li data-section-id=\"1xlm3tz\" data-start=\"3876\" data-end=\"3906\">Power semiconductor doping<\/li>\n<li data-section-id=\"1ursyu4\" data-start=\"3907\" data-end=\"3959\">Research &amp; development semiconductor pilot lines<\/li>\n<li data-section-id=\"1k6v1m6\" data-start=\"3960\" data-end=\"4005\">Silicon-based integrated circuit production<\/li>\n<\/ul>\n<h2 data-section-id=\"1idaiwr\" data-start=\"58\" data-end=\"95\">\u0e04\u0e33\u0e16\u0e32\u0e21\u0e17\u0e35\u0e48\u0e1e\u0e1a\u0e1a\u0e48\u0e2d\u0e22 (FAQ)<\/h2>\n<h3 data-section-id=\"squ7m7\" data-start=\"97\" data-end=\"166\">1. What wafer size is the Ai80HC (High Beam) system designed for?<\/h3>\n<p data-start=\"167\" data-end=\"381\">The Ai80HC (High Beam) ion implantation system is designed for 12-inch silicon wafer production lines, making it suitable for advanced semiconductor manufacturing and high-volume integrated circuit fabrication.<\/p>\n<h3 data-section-id=\"foelcb\" data-start=\"388\" data-end=\"458\">2. What is the energy range and process capability of this system?<\/h3>\n<p data-start=\"459\" data-end=\"716\">The system operates in an energy range of 0.5 keV to 80 keV, supporting both shallow and medium-depth implantation. It is compatible with LSI processes, including shallow junction formation and source\/drain engineering in advanced device structures.<\/p>\n<h3 data-section-id=\"jluc3f\" data-start=\"723\" data-end=\"792\">3. What level of precision and stability does the system provide?<\/h3>\n<p data-start=\"793\" data-end=\"850\">Ai80HC (High Beam) ensures high process consistency with:<\/p>\n<ul data-start=\"851\" data-end=\"965\">\n<li data-section-id=\"8ldlzj\" data-start=\"851\" data-end=\"878\">Angle accuracy \u2264 0.1\u00b0<\/li>\n<li data-section-id=\"nyztaj\" data-start=\"879\" data-end=\"905\">Uniformity (1\u03c3) \u2264 1%<\/li>\n<li data-section-id=\"ai4v3y\" data-start=\"906\" data-end=\"935\">Repeatability (1\u03c3) \u2264 1%<\/li>\n<li data-section-id=\"1hjdqzq\" data-start=\"936\" data-end=\"965\">Beam parallelism \u2264 0.3\u00b0<\/li>\n<\/ul>\n<p data-start=\"967\" data-end=\"1069\">These specifications ensure stable wafer-to-wafer performance and high-yield semiconductor production.<\/p>","protected":false},"excerpt":{"rendered":"<p>The Ai80HC (High Beam) series ion implantation system is a high-current ion implanter specifically designed for 12-inch silicon wafer semiconductor production lines. It is engineered for advanced precision doping processes in modern integrated circuit manufacturing, delivering stable beam performance, high process repeatability, and excellent dose control accuracy.<\/p>","protected":false},"featured_media":2343,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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