{"id":2354,"date":"2026-04-22T06:34:59","date_gmt":"2026-04-22T06:34:59","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2354"},"modified":"2026-04-22T07:16:34","modified_gmt":"2026-04-22T07:16:34","slug":"ai300-medium-beam-high-temperature-ion-implantation-system-for-12-inch-wafer-processing","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/sv\/product\/ai300-medium-beam-high-temperature-ion-implantation-system-for-12-inch-wafer-processing\/","title":{"rendered":"Ai300 (Medium Beam) jonimplantationssystem f\u00f6r h\u00f6g temperatur f\u00f6r bearbetning av 12-tumswafrar"},"content":{"rendered":"<p data-start=\"228\" data-end=\"538\"><img fetchpriority=\"high\" decoding=\"async\" class=\"alignright wp-image-2357 size-medium\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI300-300x300.png\" alt=\"Ai300 (Medium Beam) jonimplantationssystem f\u00f6r h\u00f6g temperatur f\u00f6r bearbetning av 12-tumswafrar\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI300-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI300-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI300-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI300-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI300-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI300-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI300.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Ai300 (Medium Beam) \u00e4r ett jonimplantationssystem f\u00f6r h\u00f6g temperatur som \u00e4r avsett f\u00f6r tillverkningslinjer f\u00f6r 12-tums kiselskivor i halvledare. Det \u00e4r en jonimplanterare med medelh\u00f6g str\u00f6mstyrka som utvecklats f\u00f6r avancerade dopningsprocesser i b\u00e5de kiselbaserade halvledarapplikationer och halvledarapplikationer med brett bandgap, inklusive SiC-processlinjer.<\/p>\n<p data-start=\"540\" data-end=\"872\">Systemet st\u00f6der ett energiomr\u00e5de fr\u00e5n 5 keV till 300 keV, vilket m\u00f6jligg\u00f6r flexibel implantation fr\u00e5n ytlig jonbildning till djupa dopningstill\u00e4mpningar. Det \u00e4r utrustat med ett h\u00f6gtemperaturuppv\u00e4rmt waferbord med en maxtemperatur p\u00e5 upp till 400\u00b0C, vilket ger f\u00f6rb\u00e4ttrad dopingaktivering och minskade gitterskador under implantationen.<\/p>\n<p data-start=\"874\" data-end=\"1076\">Med stabil str\u00e5lprestanda, h\u00f6g precisionskontroll och kompatibilitet med storskaliga processer f\u00f6r integrerade kretsar \u00e4r Ai300-systemet l\u00e4mpligt f\u00f6r avancerade milj\u00f6er f\u00f6r tillverkning av halvledare.<\/p>\n<hr data-start=\"1078\" data-end=\"1081\" \/>\n<h2 data-section-id=\"1d7mrtu\" data-start=\"1083\" data-end=\"1094\">Funktioner<\/h2>\n<h3 data-section-id=\"1oge1av\" data-start=\"1096\" data-end=\"1135\">Implantat f\u00f6r h\u00f6ga temperaturer<\/h3>\n<p data-start=\"1136\" data-end=\"1272\">Utrustad med ett uppv\u00e4rmt waferbord som klarar temperaturer upp till 400\u00b0C, vilket f\u00f6rb\u00e4ttrar implantatkvaliteten och effektiviteten vid dopingaktivering.<\/p>\n<h3 data-section-id=\"ox5pwk\" data-start=\"1274\" data-end=\"1295\">Brett energiomr\u00e5de<\/h3>\n<p data-start=\"1296\" data-end=\"1407\">Energiomr\u00e5det 5-300 keV st\u00f6der b\u00e5de ytliga och djupa implantationsprocesser f\u00f6r avancerade komponentstrukturer.<\/p>\n<h3 data-section-id=\"1czdwpe\" data-start=\"1409\" data-end=\"1440\">Str\u00e5lstyrning med h\u00f6g precision<\/h3>\n<p data-start=\"1441\" data-end=\"1574\">Ger implantation med h\u00f6g noggrannhet med vinkelnoggrannhet \u2264 0,1\u00b0, str\u00e5lparallellism \u2264 0,1\u00b0, enhetlighet \u2264 0,5% och repeterbarhet \u2264 0,5%.<\/p>\n<h3 data-section-id=\"1q1uyu2\" data-start=\"1576\" data-end=\"1607\">Prestanda med h\u00f6g genomstr\u00f6mning<\/h3>\n<p data-start=\"1608\" data-end=\"1710\">St\u00f6der genomstr\u00f6mning upp till \u2265 500 wafers per timme, vilket \u00e4r l\u00e4mpligt f\u00f6r h\u00f6gvolymtillverkning av halvledare.<\/p>\n<h3 data-section-id=\"1h8myql\" data-start=\"1712\" data-end=\"1746\">Kapacitet f\u00f6r avancerad jonk\u00e4lla<\/h3>\n<p data-start=\"1747\" data-end=\"1869\">St\u00f6der flera implanterade element inklusive C, B, P, N, He och Ar, vilket uppfyller olika krav p\u00e5 halvledarprocesser.<\/p>\n<h3 data-section-id=\"1bq068l\" data-start=\"1871\" data-end=\"1900\">Kompatibilitet med LSI-processer<\/h3>\n<p data-start=\"1901\" data-end=\"2010\">Fullt kompatibel med storskaliga tillverkningsprocesser f\u00f6r integrerade kretsar och avancerad komponenttillverkning.<\/p>\n<p data-start=\"1901\" data-end=\"2010\"><img decoding=\"async\" class=\"alignnone size-medium wp-image-2368\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Annular-Implantation-1-267x300.webp\" alt=\"\" width=\"267\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Annular-Implantation-1-267x300.webp 267w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Annular-Implantation-1-11x12.webp 11w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Annular-Implantation-1.webp 462w\" sizes=\"(max-width: 267px) 100vw, 267px\" \/> <img decoding=\"async\" class=\"alignnone size-medium wp-image-2369\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Quadrant-Implantation-1-291x300.webp\" alt=\"\" width=\"291\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Quadrant-Implantation-1-291x300.webp 291w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Quadrant-Implantation-1-12x12.webp 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Quadrant-Implantation-1.webp 499w\" sizes=\"(max-width: 291px) 100vw, 291px\" \/><\/p>\n<hr data-start=\"2012\" data-end=\"2015\" \/>\n<h2 data-section-id=\"rkota4\" data-start=\"2017\" data-end=\"2038\">Viktiga specifikationer<\/h2>\n<h3 data-section-id=\"rc5knr\" data-start=\"2040\" data-end=\"2062\">Processparametrar<\/h3>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"2064\" data-end=\"2246\">\n<thead data-start=\"2064\" data-end=\"2088\">\n<tr data-start=\"2064\" data-end=\"2088\">\n<th class=\"\" data-start=\"2064\" data-end=\"2071\" data-col-size=\"sm\">F\u00f6rem\u00e5l<\/th>\n<th class=\"\" data-start=\"2071\" data-end=\"2088\" data-col-size=\"sm\">Specifikation<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"2113\" data-end=\"2246\">\n<tr data-start=\"2113\" data-end=\"2137\">\n<td data-start=\"2113\" data-end=\"2126\" data-col-size=\"sm\">Wafer-storlek<\/td>\n<td data-col-size=\"sm\" data-start=\"2126\" data-end=\"2137\">12 tum<\/td>\n<\/tr>\n<tr data-start=\"2138\" data-end=\"2166\">\n<td data-start=\"2138\" data-end=\"2153\" data-col-size=\"sm\">Energiomr\u00e5de<\/td>\n<td data-col-size=\"sm\" data-start=\"2153\" data-end=\"2166\">5-300 keV<\/td>\n<\/tr>\n<tr data-start=\"2167\" data-end=\"2210\">\n<td data-start=\"2167\" data-end=\"2188\" data-col-size=\"sm\">Implanterade element<\/td>\n<td data-col-size=\"sm\" data-start=\"2188\" data-end=\"2210\">C, B, P, N, He, Ar<\/td>\n<\/tr>\n<tr data-start=\"2211\" data-end=\"2246\">\n<td data-start=\"2211\" data-end=\"2224\" data-col-size=\"sm\">Dosintervall<\/td>\n<td data-col-size=\"sm\" data-start=\"2224\" data-end=\"2246\">1E11-1E16 joner\/cm\u00b2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<h3 data-section-id=\"h0mtjp\" data-start=\"2253\" data-end=\"2273\">Str\u00e5lens prestanda<\/h3>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"2275\" data-end=\"2429\">\n<thead data-start=\"2275\" data-end=\"2299\">\n<tr data-start=\"2275\" data-end=\"2299\">\n<th class=\"\" data-start=\"2275\" data-end=\"2282\" data-col-size=\"sm\">F\u00f6rem\u00e5l<\/th>\n<th class=\"\" data-start=\"2282\" data-end=\"2299\" data-col-size=\"md\">Specifikation<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"2324\" data-end=\"2429\">\n<tr data-start=\"2324\" data-end=\"2399\">\n<td data-start=\"2324\" data-end=\"2341\" data-col-size=\"sm\">Balkens stabilitet<\/td>\n<td data-col-size=\"md\" data-start=\"2341\" data-end=\"2399\">\u2264 10% \/ timme (\u22641 str\u00e5lavbrott eller b\u00e5gbildning per timme)<\/td>\n<\/tr>\n<tr data-start=\"2400\" data-end=\"2429\">\n<td data-start=\"2400\" data-end=\"2419\" data-col-size=\"sm\">Balkens parallellitet<\/td>\n<td data-col-size=\"md\" data-start=\"2419\" data-end=\"2429\">\u2264 0.1\u00b0<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<h3 data-section-id=\"ieoahx\" data-start=\"2436\" data-end=\"2461\">Implantationsnoggrannhet<\/h3>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"2463\" data-end=\"2653\">\n<thead data-start=\"2463\" data-end=\"2487\">\n<tr data-start=\"2463\" data-end=\"2487\">\n<th class=\"\" data-start=\"2463\" data-end=\"2470\" data-col-size=\"sm\">F\u00f6rem\u00e5l<\/th>\n<th class=\"\" data-start=\"2470\" data-end=\"2487\" data-col-size=\"sm\">Specifikation<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"2512\" data-end=\"2653\">\n<tr data-start=\"2512\" data-end=\"2544\">\n<td data-start=\"2512\" data-end=\"2534\" data-col-size=\"sm\">Implantatets vinkelintervall<\/td>\n<td data-col-size=\"sm\" data-start=\"2534\" data-end=\"2544\">0\u00b0-45\u00b0<\/td>\n<\/tr>\n<tr data-start=\"2545\" data-end=\"2572\">\n<td data-start=\"2545\" data-end=\"2562\" data-col-size=\"sm\">Vinkelnoggrannhet<\/td>\n<td data-col-size=\"sm\" data-start=\"2562\" data-end=\"2572\">\u2264 0.1\u00b0<\/td>\n<\/tr>\n<tr data-start=\"2573\" data-end=\"2621\">\n<td data-start=\"2573\" data-end=\"2591\" data-col-size=\"sm\">Enhetlighet (1\u03c3)<\/td>\n<td data-col-size=\"sm\" data-start=\"2591\" data-end=\"2621\">\u2264 0,5% (P+, 1E14, 100 keV)<\/td>\n<\/tr>\n<tr data-start=\"2622\" data-end=\"2653\">\n<td data-start=\"2622\" data-end=\"2643\" data-col-size=\"sm\">Repeterbarhet (1\u03c3)<\/td>\n<td data-col-size=\"sm\" data-start=\"2643\" data-end=\"2653\">\u2264 0,5%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<h3 data-section-id=\"1i84h7f\" data-start=\"2660\" data-end=\"2682\">Systemets prestanda<\/h3>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"2684\" data-end=\"3000\">\n<thead data-start=\"2684\" data-end=\"2708\">\n<tr data-start=\"2684\" data-end=\"2708\">\n<th class=\"\" data-start=\"2684\" data-end=\"2691\" data-col-size=\"sm\">F\u00f6rem\u00e5l<\/th>\n<th class=\"\" data-start=\"2691\" data-end=\"2708\" data-col-size=\"md\">Specifikation<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"2733\" data-end=\"3000\">\n<tr data-start=\"2733\" data-end=\"2771\">\n<td data-start=\"2733\" data-end=\"2746\" data-col-size=\"sm\">Genomstr\u00f6mning<\/td>\n<td data-col-size=\"md\" data-start=\"2746\" data-end=\"2771\">\u2265 500 wafers per timme<\/td>\n<\/tr>\n<tr data-start=\"2772\" data-end=\"2811\">\n<td data-start=\"2772\" data-end=\"2802\" data-col-size=\"sm\">Maximal implantattemperatur<\/td>\n<td data-col-size=\"md\" data-start=\"2802\" data-end=\"2811\">400\u00b0C<\/td>\n<\/tr>\n<tr data-start=\"2812\" data-end=\"2854\">\n<td data-start=\"2812\" data-end=\"2829\" data-col-size=\"sm\">Storlek p\u00e5 utrustning<\/td>\n<td data-col-size=\"md\" data-start=\"2829\" data-end=\"2854\">6400 \u00d7 3640 \u00d7 3100 mm<\/td>\n<\/tr>\n<tr data-start=\"2855\" data-end=\"2883\">\n<td data-start=\"2855\" data-end=\"2870\" data-col-size=\"sm\">Vakuumniv\u00e5<\/td>\n<td data-col-size=\"md\" data-start=\"2870\" data-end=\"2883\">5E-7 Torr<\/td>\n<\/tr>\n<tr data-start=\"2884\" data-end=\"2915\">\n<td data-start=\"2884\" data-end=\"2900\" data-col-size=\"sm\">L\u00e4ckage av r\u00f6ntgenstr\u00e5lning<\/td>\n<td data-col-size=\"md\" data-start=\"2900\" data-end=\"2915\">\u2264 0,3 \u03bcSv\/h<\/td>\n<\/tr>\n<tr data-start=\"2916\" data-end=\"3000\">\n<td data-start=\"2916\" data-end=\"2932\" data-col-size=\"sm\">Skanningsl\u00e4ge<\/td>\n<td data-col-size=\"md\" data-start=\"2932\" data-end=\"3000\">Horisontell elektrostatisk skanning + vertikal mekanisk skanning<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<hr data-start=\"3002\" data-end=\"3005\" \/>\n<h2 data-section-id=\"1nd7jny\" data-start=\"3007\" data-end=\"3028\">Till\u00e4mpningsomr\u00e5den<\/h2>\n<h3 data-section-id=\"1xxdh4v\" data-start=\"3030\" data-end=\"3062\">Bearbetning av SiC-halvledare<\/h3>\n<p data-start=\"3063\" data-end=\"3194\">Anv\u00e4nds vid tillverkning av kiselkarbidkomponenter och st\u00f6der implantationsprocesser vid h\u00f6ga temperaturer som kr\u00e4vs f\u00f6r material med brett bandgap.<\/p>\n<h3 data-section-id=\"kkfbvw\" data-start=\"3196\" data-end=\"3241\">Kiselbaserad halvledartillverkning<\/h3>\n<p data-start=\"3242\" data-end=\"3348\">Till\u00e4mplig p\u00e5 produktionslinjer f\u00f6r 12-tums kiselskivor f\u00f6r tillverkning av CMOS och avancerade integrerade kretsar.<\/p>\n<h3 data-section-id=\"c3blgn\" data-start=\"3350\" data-end=\"3393\">Implantationsprocesser vid h\u00f6ga temperaturer<\/h3>\n<p data-start=\"3394\" data-end=\"3511\">St\u00f6der implantationsprocesser som kr\u00e4ver f\u00f6rh\u00f6jd wafertemperatur f\u00f6r att minska defekter och f\u00f6rb\u00e4ttra dopantaktiveringen.<\/p>\n<h3 data-section-id=\"2m28ht\" data-start=\"3513\" data-end=\"3541\">Tillverkning av str\u00f6mf\u00f6rs\u00f6rjningsenheter<\/h3>\n<p data-start=\"3542\" data-end=\"3646\">L\u00e4mplig f\u00f6r krafthalvledarkomponenter d\u00e4r exakt dopning och implantation med h\u00f6g energi kr\u00e4vs.<\/p>\n<h3 data-section-id=\"10yv1en\" data-start=\"3648\" data-end=\"3690\">Avancerad produktion av integrerade kretsar<\/h3>\n<p data-start=\"3691\" data-end=\"3777\">St\u00f6der LSI-processintegration med krav p\u00e5 h\u00f6g precision och h\u00f6g genomstr\u00f6mning.<\/p>\n<hr data-start=\"3779\" data-end=\"3782\" \/>\n<h2 data-section-id=\"1r8frcv\" data-start=\"3784\" data-end=\"3813\">Vanliga fr\u00e5gor och svar<\/h2>\n<h3 data-section-id=\"hl3b9g\" data-start=\"3815\" data-end=\"3867\">1. Vilken waferstorlek st\u00f6der Ai300-systemet<\/h3>\n<p data-start=\"3868\" data-end=\"3981\">Systemet \u00e4r konstruerat f\u00f6r 12-tums kiselskivor och \u00e4r l\u00e4mpligt f\u00f6r avancerade tillverkningslinjer f\u00f6r halvledare.<\/p>\n<h3 data-section-id=\"gygi37\" data-start=\"3983\" data-end=\"4063\">2. Vad \u00e4r den viktigaste f\u00f6rdelen med implantationsf\u00f6rm\u00e5gan vid h\u00f6g temperatur<\/h3>\n<p data-start=\"4064\" data-end=\"4211\">Systemet st\u00f6der implantation upp till 400\u00b0C, vilket bidrar till att minska gitterskador, f\u00f6rb\u00e4ttra dopingaktiveringen och f\u00f6rb\u00e4ttra enhetens prestanda.<\/p>\n<h3 data-section-id=\"13ypcut\" data-start=\"4213\" data-end=\"4293\">3. Vilken niv\u00e5 av precision och produktionseffektivitet ger systemet?<\/h3>\n<p data-start=\"4294\" data-end=\"4481\">Systemet ger en vinkelnoggrannhet inom 0,1 grader, str\u00e5lparallellitet inom 0,1 grader samt j\u00e4mnhet och repeterbarhet inom 0,5%, med en kapacitet p\u00e5 upp till 500 wafers per timme.<\/p>","protected":false},"excerpt":{"rendered":"<p>Ai300 (Medium Beam) \u00e4r ett jonimplantationssystem f\u00f6r h\u00f6g temperatur som \u00e4r avsett f\u00f6r tillverkningslinjer f\u00f6r 12-tums kiselskivor i halvledare. Det \u00e4r en jonimplanterare med medelh\u00f6g str\u00f6mstyrka som utvecklats f\u00f6r avancerade dopningsprocesser i b\u00e5de kiselbaserade halvledarapplikationer och halvledarapplikationer med brett bandgap, inklusive SiC-processlinjer.<\/p>","protected":false},"featured_media":2357,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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