{"id":2346,"date":"2026-04-22T05:56:29","date_gmt":"2026-04-22T05:56:29","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2346"},"modified":"2026-04-22T07:25:08","modified_gmt":"2026-04-22T07:25:08","slug":"ai250-medium-beam-room-temperature-ion-implantation-system-for-6-8-inch-silicon-wafer-processing","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/sv\/product\/ai250-medium-beam-room-temperature-ion-implantation-system-for-6-8-inch-silicon-wafer-processing\/","title":{"rendered":"Ai250 (Medium Beam) rumstempererat jonimplantationssystem f\u00f6r bearbetning av 6-8 tums kiselskivor"},"content":{"rendered":"

\"\"Ai250 (Medium Beam) jonimplantationssystem \u00e4r utformat f\u00f6r 6-tums och 8-tums tillverkningslinjer f\u00f6r halvledare med kiselskivor. Det \u00e4r en jonimplanterare med medelh\u00f6g str\u00f6mstyrka som anv\u00e4nds i avancerade tillverkningsprocesser f\u00f6r integrerade kretsar och ger stabil str\u00e5lprestanda, h\u00f6g implantationsnoggrannhet och tillf\u00f6rlitlig doskontroll.<\/p>\n

Systemet st\u00f6der ett energiomr\u00e5de fr\u00e5n 5 keV till 250 keV, vilket m\u00f6jligg\u00f6r b\u00e5de ytliga och djupa jonimplantationsapplikationer. Det \u00e4r l\u00e4mpligt f\u00f6r ett brett spektrum av dopningsprocesser f\u00f6r halvledare och \u00e4r helt kompatibelt med kraven f\u00f6r LSI-tillverkning.<\/p>\n

\n

Funktioner<\/h2>\n

Stabil prestanda f\u00f6r medelh\u00f6g str\u00e5lning<\/h3>\n

S\u00e4kerst\u00e4ller stabil jonstr\u00e5leproduktion under l\u00e5nga produktionscykler, vilket f\u00f6rb\u00e4ttrar processkonsistensen och minskar variabiliteten.<\/p>\n

Kapacitet f\u00f6r brett energiomr\u00e5de<\/h3>\n

Energiomr\u00e5det 5-250 keV st\u00f6der flexibla implantatkrav f\u00f6r olika komponentstrukturer och processnoder.<\/p>\n

Processtyrning med h\u00f6g precision<\/h3>\n

Ger implantationsprestanda med h\u00f6g noggrannhet med vinkelnoggrannhet \u2264 0,2\u00b0, str\u00e5lparallellitet \u2264 0,2\u00b0, enhetlighet \u2264 0,5% och repeterbarhet \u2264 0,5%.<\/p>\n

H\u00f6g genomstr\u00f6mningskapacitet<\/h3>\n

St\u00f6djer \u2265 200 wafers per timme, l\u00e4mpligt f\u00f6r halvledarproduktion i medelstora till stora volymer.<\/p>\n

M\u00f6nster Implantatfunktion<\/h3>\n

St\u00f6djer implantation i flera zoner och kvadranter p\u00e5 en enda wafer, vilket f\u00f6rb\u00e4ttrar processflexibiliteten och minskar utvecklingskostnaderna.<\/p>\n

Kompatibilitet med LSI-processer<\/h3>\n

Fullt kompatibel med LSI:s tillverkningsprocesser f\u00f6r halvledare.<\/p>\n

\"\"<\/p>\n

\n

Viktiga specifikationer<\/h2>\n

Processparametrar<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
F\u00f6rem\u00e5l<\/th>\nSpecifikation<\/th>\n<\/tr>\n<\/thead>\n
Wafer-storlek<\/td>\n6-8 tums kiselskivor<\/td>\n<\/tr>\n
Energiomr\u00e5de<\/td>\n5-250 keV<\/td>\n<\/tr>\n
Implanterade element<\/td>\nB+, P+, As+, Ar+, N+, H+<\/td>\n<\/tr>\n
Dosintervall<\/td>\n5E11-1E16 joner\/cm\u00b2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Str\u00e5lens prestanda<\/h3>\n
\n
\n\n\n\n\n\n\n\n
F\u00f6rem\u00e5l<\/th>\nSpecifikation<\/th>\n<\/tr>\n<\/thead>\n
Maximal str\u00e5lstr\u00f6m<\/td>\nAr+ \u2265 1300 \u03bcA @ \u2265220 keV
\nB+ \u2265 1000 \u03bcA @ \u2265220 keV
\nP+ \u2265 1300 \u03bcA @ \u2265220 keV
\nN+ \u2265 1000 \u03bcA @ \u2265220 keV<\/td>\n<\/tr>\n
Balkens stabilitet<\/td>\n\u2264 15% \/ timme (str\u00e5lavbrott och b\u00e5gbildning \u2264 1 g\u00e5ng per timme)<\/td>\n<\/tr>\n
Balkens parallellitet<\/td>\n\u2264 0.2\u00b0<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Implantationsnoggrannhet<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
F\u00f6rem\u00e5l<\/th>\nSpecifikation<\/th>\n<\/tr>\n<\/thead>\n
Implantatets vinkelintervall<\/td>\n0\u00b0-45\u00b0<\/td>\n<\/tr>\n
Vinkelnoggrannhet<\/td>\n\u2264 0.2\u00b0<\/td>\n<\/tr>\n
Enhetlighet (1\u03c3)<\/td>\n\u2264 0,5% (B+, 2E14, 150 keV)<\/td>\n<\/tr>\n
Repeterbarhet (1\u03c3)<\/td>\n\u2264 0,5%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Systemets prestanda<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n\n
F\u00f6rem\u00e5l<\/th>\nSpecifikation<\/th>\n<\/tr>\n<\/thead>\n
Genomstr\u00f6mning<\/td>\n\u2265 200 wafers per timme<\/td>\n<\/tr>\n
Vakuumniv\u00e5<\/td>\n< 5E-7 Torr<\/td>\n<\/tr>\n
L\u00e4ckage av r\u00f6ntgenstr\u00e5lning<\/td>\n\u2264 0,6 \u03bcSv\/h<\/td>\n<\/tr>\n
Skanningsl\u00e4ge<\/td>\nHorisontell elektrostatisk skanning + vertikal mekanisk skanning<\/td>\n<\/tr>\n
Storlek p\u00e5 utrustning<\/td>\n5600 \u00d7 3300 \u00d7 2600 mm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\n

Till\u00e4mpningsomr\u00e5den<\/h2>\n

Tillverkning av halvledarkomponenter<\/h3>\n

Anv\u00e4nds vid tillverkning av logiska CMOS-enheter och ger exakt dopingimplantation f\u00f6r transistorbildning.<\/p>\n

Tillverkning av integrerade kretsar<\/h3>\n

Anv\u00e4nds i tillverkningsprocesser f\u00f6r LSI och avancerade IC som kr\u00e4ver dopningskontroll med h\u00f6g precision.<\/p>\n

Grunda och djupa korsningsformationer<\/h3>\n

St\u00f6der implantationsprocesser f\u00f6r source\/drain-teknik och kontroll av f\u00f6rbindelsedjup.<\/p>\n

Dopantteknik<\/h3>\n

Anv\u00e4nds f\u00f6r att kontrollera kiselskivors elektriska egenskaper genom noggrann jonimplantation.<\/p>\n

Processutveckling och FoU<\/h3>\n

L\u00e4mplig f\u00f6r utveckling av halvledarprocesser, pilotproduktion och tillverkning av experimentella enheter.<\/p>\n

\n

Vanliga fr\u00e5gor och svar<\/h2>\n

1. Vilka waferstorlekar st\u00f6der Ai250<\/h3>\n

Systemet st\u00f6der 6-tums och 8-tums kiselskivor och \u00e4r l\u00e4mpligt f\u00f6r vanliga tillverkningslinjer f\u00f6r halvledare.<\/p>\n

2. Vilket \u00e4r systemets energiomr\u00e5de?<\/h3>\n

Energiomr\u00e5det \u00e4r 5 keV till 250 keV, vilket st\u00f6der b\u00e5de ytliga och djupa implantationsprocesser f\u00f6r tillverkning av halvledarkomponenter.<\/p>\n

3. Vilken niv\u00e5 av processnoggrannhet ger systemet?<\/h3>\n

Systemet ger vinkelnoggrannhet inom 0,2\u00b0, balkparallellitet inom 0,2\u00b0 samt enhetlighet och repeterbarhet inom 0,5%, vilket s\u00e4kerst\u00e4ller stabila och h\u00f6gavkastande produktionsprestanda.<\/p>","protected":false},"excerpt":{"rendered":"

Ai250 (Medium Beam) jonimplantationssystem \u00e4r utformat f\u00f6r 6-tums och 8-tums tillverkningslinjer f\u00f6r halvledare med kiselskivor. Det \u00e4r en jonimplanterare med medelh\u00f6g str\u00f6mstyrka som anv\u00e4nds i avancerade tillverkningsprocesser f\u00f6r integrerade kretsar och ger stabil str\u00e5lprestanda, h\u00f6g implantationsnoggrannhet och tillf\u00f6rlitlig doskontroll.<\/p>","protected":false},"featured_media":2347,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}}},"product_brand":[],"product_cat":[1177],"product_tag":[1189,1190,1191,1193,1178,1192,1186,1185,1188,1187],"class_list":{"0":"post-2346","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-ion-implantation-equipment","7":"product_tag-6-inch-wafer-equipment","8":"product_tag-8-inch-wafer-processing","9":"product_tag-cmos-manufacturing-equipment","10":"product_tag-high-current-ion-implantation","11":"product_tag-ion-implantation-system","12":"product_tag-lsi-process-equipment","13":"product_tag-medium-beam-ion-implanter","14":"product_tag-semiconductor-fabrication-equipment","15":"product_tag-semiconductor-implantation-machine","16":"product_tag-silicon-wafer-doping-equipment","17":"desktop-align-left","18":"tablet-align-left","19":"mobile-align-left","20":"ast-product-gallery-layout-horizontal-slider","21":"ast-product-gallery-with-no-image","22":"ast-product-tabs-layout-horizontal","24":"first","25":"instock","26":"shipping-taxable","27":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product\/2346","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/comments?post=2346"}],"version-history":[{"count":2,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product\/2346\/revisions"}],"predecessor-version":[{"id":2374,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product\/2346\/revisions\/2374"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/media\/2347"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/media?parent=2346"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product_brand?post=2346"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product_cat?post=2346"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product_tag?post=2346"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}