{"id":2167,"date":"2026-04-14T02:28:42","date_gmt":"2026-04-14T02:28:42","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2167"},"modified":"2026-04-14T02:28:45","modified_gmt":"2026-04-14T02:28:45","slug":"4-inch-4h-n-silicon-carbide-wafer","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/sv\/product\/4-inch-4h-n-silicon-carbide-wafer\/","title":{"rendered":"4 tum 100 mm 4H-N kiselkarbidskiva"},"content":{"rendered":"

\"WaferThe 4 inch 4H-N silicon carbide wafer is a conductive SiC substrate designed for advanced power semiconductor applications. It is based on the 4H crystal polytype, which is widely recognized in the industry for its superior electrical and thermal performance.<\/p>\n

Silicon carbide belongs to the third-generation semiconductor materials and offers significant advantages over traditional silicon. Its wide bandgap, high breakdown electric field, and excellent thermal conductivity make it highly suitable for devices operating under high voltage, high frequency, and high temperature conditions.<\/p>\n

This wafer is commonly used for manufacturing power devices such as MOSFETs, Schottky barrier diodes, JFETs, and IGBTs. These devices are critical components in modern energy systems, where efficiency, reliability, and compact design are essential. The 4 inch format provides a balance between cost efficiency and device yield, making it widely adopted in both research and industrial production environments.<\/p>\n

Specifikationer<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Parameter<\/th>\nV\u00e4rde<\/th>\n<\/tr>\n<\/thead>\n
Diameter<\/td>\n100 \u00b1 0,5 mm<\/td>\n<\/tr>\n
Tjocklek<\/td>\n350 \u00b1 25 \u03bcm<\/td>\n<\/tr>\n
Polytyp<\/td>\n4H<\/td>\n<\/tr>\n
Typ av konduktivitet<\/td>\nN-typ<\/td>\n<\/tr>\n
Ytj\u00e4mnhet<\/td>\nRa \u2264 0.2 nm<\/td>\n<\/tr>\n
TTV<\/td>\n\u2264 10 \u03bcm<\/td>\n<\/tr>\n
Varp<\/td>\n\u2264 30 \u03bcm<\/td>\n<\/tr>\n
Defekt densitet<\/td>\nMPD < 1 ea\/cm\u00b2<\/td>\n<\/tr>\n
Kant<\/td>\n45\u00b0 bevel, SEMI standard<\/td>\n<\/tr>\n
Betyg<\/td>\nProduktion \/ Forskning \/ Dummy<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

These parameters ensure high surface quality and dimensional stability, which are essential for epitaxial growth and device fabrication processes.<\/p>\n

Materialegenskaper<\/h2>\n

Silicon carbide demonstrates a wide bandgap of approximately 3.26 eV, which allows devices to operate at significantly higher voltages compared to silicon. This results in improved power handling capability and reduced conduction losses.\"\"<\/p>\n

Another important property is its high breakdown electric field, which can be nearly ten times greater than that of silicon. This enables thinner device structures and higher efficiency in power conversion systems.<\/p>\n

Thermal conductivity is also a key advantage. SiC conducts heat about three times more effectively than silicon, allowing devices to maintain stable performance under high load conditions. This reduces the need for complex cooling systems and improves overall system reliability.<\/p>\n

In addition, silicon carbide maintains stable electrical characteristics at temperatures exceeding 600\u00b0C. This makes it particularly suitable for applications in harsh environments such as automotive power systems, industrial drives, and aerospace electronics.<\/p>\n

The material also offers high electron mobility and low on-resistance, contributing to faster switching speeds and reduced energy loss in power devices.<\/p>\n

Available Wafer Sizes<\/h2>\n

Silicon carbide wafers are available in multiple diameters to meet different application needs:<\/p>\n

\n
\n\n\n\n\n\n\n\n\n\n
Size<\/th>\nDiameter<\/th>\nTjocklek Intervall<\/th>\n<\/tr>\n<\/thead>\n
2 inch<\/td>\n50.8 mm<\/td>\n330\u2013350 \u03bcm<\/td>\n<\/tr>\n
3 inch<\/td>\n76.2 mm<\/td>\n350\u2013500 \u03bcm<\/td>\n<\/tr>\n
4 tum<\/td>\n100 mm<\/td>\n350\u2013500 \u03bcm<\/td>\n<\/tr>\n
6 tum<\/td>\n150 mm<\/td>\n350\u2013500 \u03bcm<\/td>\n<\/tr>\n
8 tum<\/td>\n200 mm<\/td>\n350\u2013500 \u03bcm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Common types include conductive 4H-N, semi-insulating HPSI, and other specialized variants for RF and power applications.<\/p>\n

Till\u00e4mpningar<\/h2>\n

In electric vehicles, SiC wafers are used in traction inverters, onboard chargers, and DC-DC converters. They improve energy efficiency, reduce heat generation, and enable more compact system designs.\"\"<\/p>\n

In renewable energy systems, SiC devices are applied in solar inverters and wind power converters. Their high efficiency contributes to reduced energy loss and improved system performance.<\/p>\n

Industrial systems also benefit from SiC technology, especially in high-power motor drives and automation equipment where reliability and durability are critical.<\/p>\n

In power grid infrastructure, silicon carbide is used in smart grid systems and high-voltage transmission equipment to enhance energy conversion efficiency and reduce system losses.<\/p>\n

Aerospace and defense applications utilize SiC for high-reliability electronics that must operate under extreme temperature and environmental conditions.<\/p>\n

J\u00e4mf\u00f6relse mellan Si och SiC<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n
Fastighet<\/th>\nKisel<\/th>\nKiselkarbid<\/th>\n<\/tr>\n<\/thead>\n
Bandgap<\/td>\n1,12 eV<\/td>\n3.26 eV<\/td>\n<\/tr>\n
Breakdown Field<\/td>\nL\u00e5g<\/td>\nH\u00f6g<\/td>\n<\/tr>\n
Termisk konduktivitet<\/td>\nM\u00e5ttlig<\/td>\nH\u00f6g<\/td>\n<\/tr>\n
Max Temperature<\/td>\n~150\u00b0C<\/td>\n>600\u00b0C<\/td>\n<\/tr>\n
Effektivitet<\/td>\nStandard<\/td>\nH\u00f6g<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Silicon remains suitable for low-power and conventional electronics, while silicon carbide is increasingly preferred for high-power, high-efficiency systems.<\/p>\n

VANLIGA FR\u00c5GOR<\/h2>\n

Q: What is the difference between silicon and silicon carbide wafers?<\/strong>
Kiselskivor anv\u00e4nds ofta i integrerade kretsar och vanliga elektroniska apparater. Kiselkarbidskivor \u00e4r avsedda f\u00f6r kraftelektronik, d\u00e4r det kr\u00e4vs h\u00f6g sp\u00e4nning, h\u00f6g temperatur och h\u00f6g effektivitet.<\/p>\n

F: Hur \u00e4r SiC j\u00e4mf\u00f6rt med GaN?<\/strong>
SiC anv\u00e4nds vanligen i h\u00f6gsp\u00e4nnings- och h\u00f6geffektsapplikationer, t.ex. i elfordon och eln\u00e4t. GaN \u00e4r mer l\u00e4mpat f\u00f6r h\u00f6gfrekvens- och l\u00e5gsp\u00e4nningsapplikationer, t.ex. RF-system och snabbladdningsenheter.<\/p>\n

F: \u00c4r kiselkarbid en keramik eller en halvledare?<\/strong>
Kiselkarbid \u00e4r b\u00e5de en keram och en halvledare. Den kombinerar h\u00f6g mekanisk h\u00e5llfasthet med utm\u00e4rkta elektriska egenskaper, vilket g\u00f6r den l\u00e4mplig f\u00f6r kr\u00e4vande elektroniska applikationer.<\/p>\n

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The 4 inch 4H-N silicon carbide wafer is a key material for modern power electronics. Its combination of electrical efficiency, thermal performance, and reliability makes it an essential substrate for next-generation devices. As industries continue to demand higher energy efficiency and system performance, SiC wafers are becoming increasingly important in both commercial and industrial 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