{"id":2094,"date":"2026-04-03T02:54:14","date_gmt":"2026-04-03T02:54:14","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2094"},"modified":"2026-04-03T02:54:15","modified_gmt":"2026-04-03T02:54:15","slug":"high-performance-gan-epitaxy-equipment-for-6-8-wafers","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/sv\/product\/high-performance-gan-epitaxy-equipment-for-6-8-wafers\/","title":{"rendered":"H\u00f6gpresterande GaN-epitaxiutrustning f\u00f6r 6\u201d\/8\u201d-wafers"},"content":{"rendered":"<p data-start=\"201\" data-end=\"669\"><img fetchpriority=\"high\" decoding=\"async\" class=\"size-medium wp-image-2095 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/High-Performance-GaN-Epitaxy-Equipment-for-6_8-Wafers-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/High-Performance-GaN-Epitaxy-Equipment-for-6_8-Wafers-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/High-Performance-GaN-Epitaxy-Equipment-for-6_8-Wafers-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/High-Performance-GaN-Epitaxy-Equipment-for-6_8-Wafers-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/High-Performance-GaN-Epitaxy-Equipment-for-6_8-Wafers-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/High-Performance-GaN-Epitaxy-Equipment-for-6_8-Wafers-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/High-Performance-GaN-Epitaxy-Equipment-for-6_8-Wafers-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/High-Performance-GaN-Epitaxy-Equipment-for-6_8-Wafers.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>High-Performance Gallium Nitride (GaN) Epitaxy Equipment \u00e4r ett avancerat epitaxialtillv\u00e4xtsystem som \u00e4r konstruerat f\u00f6r h\u00f6geffektiv produktion av 6-tums och 8-tums GaN-wafers. Systemet \u00e4r utvecklat f\u00f6r att m\u00f6ta de \u00f6kande kraven fr\u00e5n n\u00e4sta generations kraftelektronik, RF-enheter och h\u00f6gfrekvensapplikationer och erbjuder en helt\u00e4ckande l\u00f6sning som balanserar genomstr\u00f6mning, epitaxiell enhetlighet, defektkontroll och driftkostnadseffektivitet.<\/p>\n<p data-start=\"671\" data-end=\"1225\">Med den egenutvecklade ChipCore-tekniken ger utrustningen enast\u00e5ende j\u00e4mnhet i skikten, l\u00e5g defektdensitet och l\u00e5ngsiktig driftstabilitet. Den robusta modul\u00e4ra arkitekturen m\u00f6jligg\u00f6r oberoende installation av str\u00f6mf\u00f6rs\u00f6rjning, avgasmoduler och EFEM\/PM\/TM-moduler, vilket m\u00f6jligg\u00f6r flexibel integration i fabriksmilj\u00f6er med varierande golvlayouter, inklusive mezzanin och gr\u00e5zoner. Denna modularitet f\u00f6renklar inte bara underh\u00e5llet utan minskar ocks\u00e5 produktionsavbrotten, vilket g\u00f6r den mycket l\u00e4mplig f\u00f6r kontinuerlig tillverkning i industriell skala.<\/p>\n<p data-start=\"1227\" data-end=\"1595\">Systemet har exakt temperaturkontroll i flera zoner och optimerad gasfl\u00f6desdynamik f\u00f6r att s\u00e4kerst\u00e4lla j\u00e4mn deponering \u00f6ver alla waferytor. I kombination med helautomatisk waferhantering, mekanismer f\u00f6r wafer\u00f6verf\u00f6ring vid h\u00f6g temperatur och kontinuerlig process\u00f6vervakning s\u00e4kerst\u00e4lls en konsekvent epitaxial tillv\u00e4xt av h\u00f6g kvalitet f\u00f6r ett brett utbud av GaN-baserade komponenter.<\/p>\n<p data-start=\"1597\" data-end=\"1943\">Utrustningen \u00e4r avsedd f\u00f6r h\u00f6gvolymproduktion och st\u00f6der oavbruten drift, vilket ger maximal genomstr\u00f6mning utan att processtabiliteten \u00e4ventyras. Kompatibiliteten med flera olika substrattyper g\u00f6r det m\u00f6jligt f\u00f6r tillverkare att ut\u00f6ka produktionskapaciteten med olika GaN-wafers samtidigt som l\u00e5ga driftskostnader och h\u00f6g tillf\u00f6rlitlighet bibeh\u00e5lls.<\/p>\n<h3 data-section-id=\"xj0uai\" data-start=\"1950\" data-end=\"1980\">Viktiga tekniska f\u00f6rdelar<\/h3>\n<ul data-start=\"1982\" data-end=\"3360\">\n<li data-section-id=\"zml9wo\" data-start=\"1982\" data-end=\"2148\"><strong data-start=\"1984\" data-end=\"2010\">\u00c4gander\u00e4ttsligt skyddad teknik<\/strong>: Utvecklad helt av ChipCore med fullst\u00e4ndiga immateriella r\u00e4ttigheter, vilket garanterar differentierad prestanda och konkurrenskraft p\u00e5 marknaden.<\/li>\n<li data-section-id=\"1o0ja2a\" data-start=\"2149\" data-end=\"2321\"><strong data-start=\"2151\" data-end=\"2193\">Exceptionell enhetlighet och f\u00e5 defekter<\/strong>: Avancerad temperatur- och gasfl\u00f6deskontroll m\u00f6jligg\u00f6r mycket j\u00e4mn skikttjocklek och sammans\u00e4ttning med minimal defektdensitet.<\/li>\n<li data-section-id=\"129t8yb\" data-start=\"2322\" data-end=\"2467\"><strong data-start=\"2324\" data-end=\"2343\">H\u00f6g genomstr\u00f6mning<\/strong>: Optimerad f\u00f6r kontinuerlig, storskalig produktion med st\u00f6d f\u00f6r b\u00e5de 6\u201d- och 8\u201d-wafers f\u00f6r maximal tillverkningseffektivitet.<\/li>\n<li data-section-id=\"1y8ea7h\" data-start=\"2468\" data-end=\"2612\"><strong data-start=\"2470\" data-end=\"2493\">L\u00e5ga driftskostnader<\/strong>: Effektiv termisk hantering och gasutnyttjande minskar produktionskostnaden per wafer samtidigt som resurssl\u00f6seriet minimeras.<\/li>\n<li data-section-id=\"u0zpdv\" data-start=\"2613\" data-end=\"2774\"><strong data-start=\"2615\" data-end=\"2649\">F\u00f6rl\u00e4ngda underh\u00e5llsintervaller<\/strong>: Utformad f\u00f6r l\u00e5nga driftcykler utan driftstopp, vilket minskar underh\u00e5llsfrekvensen och f\u00f6rb\u00e4ttrar den totala produktiviteten.<\/li>\n<li data-section-id=\"6nklq1\" data-start=\"2775\" data-end=\"2942\"><strong data-start=\"2777\" data-end=\"2796\">H\u00f6g automatisering<\/strong>: Fullst\u00e4ndig EFEM-integration och tillvalskoppling till traverskran m\u00f6jligg\u00f6r automatiserad waferhantering, vilket minskar manuella ingrepp och driftsfel.<\/li>\n<li data-section-id=\"1l3fg4b\" data-start=\"2943\" data-end=\"3093\"><strong data-start=\"2945\" data-end=\"2978\">Kompatibilitet med flera substrat<\/strong>: St\u00f6der en m\u00e4ngd olika substratmaterial, vilket m\u00f6jligg\u00f6r flexibel tillverkning f\u00f6r olika GaN-enhetstill\u00e4mpningar.<\/li>\n<li data-section-id=\"nv1m3a\" data-start=\"3094\" data-end=\"3223\"><strong data-start=\"3096\" data-end=\"3119\">Skalbar produktion<\/strong>: Modul\u00e4r arkitektur av split-typ m\u00f6jligg\u00f6r framtida expansion eller anpassning till nya produktionslayouter.<\/li>\n<li data-section-id=\"dyhu20\" data-start=\"3224\" data-end=\"3360\"><strong data-start=\"3226\" data-end=\"3247\">Processtabilitet<\/strong>: Kontinuerlig \u00f6vervakning och \u00e5terkoppling s\u00e4kerst\u00e4ller reproducerbarhet och tillf\u00f6rlitlighet \u00f6ver flera wafers och batcher.<\/li>\n<\/ul>\n<h3 data-section-id=\"4v9b11\" data-start=\"3367\" data-end=\"3392\">Process Prestanda<\/h3>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"3394\" data-end=\"4196\">\n<thead data-start=\"3394\" data-end=\"3423\">\n<tr data-start=\"3394\" data-end=\"3423\">\n<th class=\"\" data-start=\"3394\" data-end=\"3406\" data-col-size=\"sm\">Parameter<\/th>\n<th class=\"\" data-start=\"3406\" data-end=\"3423\" data-col-size=\"md\">Specifikation<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"3454\" data-end=\"4196\">\n<tr data-start=\"3454\" data-end=\"3549\">\n<td data-start=\"3454\" data-end=\"3467\" data-col-size=\"sm\">Genomstr\u00f6mning<\/td>\n<td data-col-size=\"md\" data-start=\"3467\" data-end=\"3549\">H\u00f6gkapacitetsdesign f\u00f6r industriell produktion med kontinuerlig drift<\/td>\n<\/tr>\n<tr data-start=\"3550\" data-end=\"3599\">\n<td data-start=\"3550\" data-end=\"3577\" data-col-size=\"sm\">Kompatibilitet med waferstorlek<\/td>\n<td data-col-size=\"md\" data-start=\"3577\" data-end=\"3599\">6\u201d \/ 8\u201d GaN-wafers<\/td>\n<\/tr>\n<tr data-start=\"3600\" data-end=\"3704\">\n<td data-start=\"3600\" data-end=\"3624\" data-col-size=\"sm\">Operativ stabilitet<\/td>\n<td data-col-size=\"md\" data-start=\"3624\" data-end=\"3704\">L\u00e5ng, oavbruten, felfri drift f\u00f6r tillverkning i industriell skala<\/td>\n<\/tr>\n<tr data-start=\"3705\" data-end=\"3795\">\n<td data-start=\"3705\" data-end=\"3728\" data-col-size=\"sm\">Epitaxiell likformighet<\/td>\n<td data-start=\"3728\" data-end=\"3795\" data-col-size=\"md\">Utm\u00e4rkt j\u00e4mnhet i tjocklek och sammans\u00e4ttning \u00f6ver hela wafern<\/td>\n<\/tr>\n<tr data-start=\"3796\" data-end=\"3886\">\n<td data-start=\"3796\" data-end=\"3813\" data-col-size=\"sm\">Defekt densitet<\/td>\n<td data-col-size=\"md\" data-start=\"3813\" data-end=\"3886\">L\u00e5g defektfrekvens s\u00e4kerst\u00e4ller h\u00f6g avkastning och konsekvent enhetsprestanda<\/td>\n<\/tr>\n<tr data-start=\"3887\" data-end=\"3953\">\n<td data-start=\"3887\" data-end=\"3905\" data-col-size=\"sm\">Produktionskostnad<\/td>\n<td data-col-size=\"md\" data-start=\"3905\" data-end=\"3953\">Optimerad f\u00f6r l\u00e5g driftskostnad per wafer<\/td>\n<\/tr>\n<tr data-start=\"3954\" data-end=\"4040\">\n<td data-start=\"3954\" data-end=\"3973\" data-col-size=\"sm\">Automatiseringsniv\u00e5<\/td>\n<td data-col-size=\"md\" data-start=\"3973\" data-end=\"4040\">H\u00f6g, med full EFEM och kranassisterad waferhantering som tillval<\/td>\n<\/tr>\n<tr data-start=\"4041\" data-end=\"4096\">\n<td data-start=\"4041\" data-end=\"4059\" data-col-size=\"sm\">Produktionsl\u00e4ge<\/td>\n<td data-start=\"4059\" data-end=\"4096\" data-col-size=\"md\">Kontinuerlig tillverkning under hela dagen<\/td>\n<\/tr>\n<tr data-start=\"4097\" data-end=\"4196\">\n<td data-start=\"4097\" data-end=\"4123\" data-col-size=\"sm\">Kompatibilitet med substrat<\/td>\n<td data-start=\"4123\" data-end=\"4196\" data-col-size=\"md\">St\u00f6djer flera substrattyper f\u00f6r olika GaN-applikationer<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<h3 data-section-id=\"mn7c2p\" data-start=\"4203\" data-end=\"4230\">Till\u00e4mpningsscenarier<\/h3>\n<p data-start=\"4232\" data-end=\"4422\">Denna GaN-epitaxiutrustning anv\u00e4nds ofta vid avancerad halvledartillverkning, s\u00e4rskilt f\u00f6r applikationer som kr\u00e4ver h\u00f6g effektivitet, h\u00f6g sp\u00e4nning och h\u00f6gfrekventa prestanda:<\/p>\n<p data-start=\"4424\" data-end=\"4601\"><strong data-start=\"4424\" data-end=\"4445\">Kraftelektronik<\/strong><br data-start=\"4445\" data-end=\"4448\" \/>Anv\u00e4nds f\u00f6r tillverkning av GaN MOSFETs, HEMTs och kraftmoduler f\u00f6r industriella omriktare, vilket ger energieffektiva l\u00f6sningar f\u00f6r h\u00f6gsp\u00e4nningsapplikationer.<\/p>\n<p data-start=\"4603\" data-end=\"4822\"><strong data-start=\"4603\" data-end=\"4633\">RF- och kommunikationsenheter<\/strong><br data-start=\"4633\" data-end=\"4636\" \/>Idealisk f\u00f6r h\u00f6gfrekventa GaN-enheter som anv\u00e4nds inom tr\u00e5dl\u00f6s kommunikation, 5G-infrastruktur, radarsystem och satellitkommunikation, vilket garanterar h\u00f6g signalintegritet och tillf\u00f6rlitlighet.<\/p>\n<p data-start=\"4824\" data-end=\"5023\"><strong data-start=\"4824\" data-end=\"4851\">Elektriska fordon (EV)<\/strong><br data-start=\"4851\" data-end=\"4854\" \/>St\u00f6djer produktion av ombordladdare, DC-DC-omvandlare och inverterarmoduler, vilket f\u00f6rb\u00e4ttrar fordonens energieffektivitet, minskar energif\u00f6rlusterna och f\u00f6rl\u00e4nger batteriets livsl\u00e4ngd.<\/p>\n<p data-start=\"5025\" data-end=\"5218\"><strong data-start=\"5025\" data-end=\"5053\">System f\u00f6r f\u00f6rnybar energi<\/strong><br data-start=\"5053\" data-end=\"5056\" \/>Anv\u00e4nds i solcellsv\u00e4xelriktare och energilagringsenheter, vilket ger h\u00f6gre omvandlingseffektivitet, f\u00f6rb\u00e4ttrad systemtillf\u00f6rlitlighet och f\u00f6rl\u00e4ngd livsl\u00e4ngd.<\/p>\n<p data-start=\"5220\" data-end=\"5416\"><strong data-start=\"5220\" data-end=\"5265\">Industriell automation och h\u00f6geffektsdrivsystem<\/strong><br data-start=\"5265\" data-end=\"5268\" \/>Anv\u00e4nds i h\u00f6geffektsmotordrifter, industriella automationssystem och str\u00f6mf\u00f6rs\u00f6rjningsenheter som kr\u00e4ver stabil, effektiv och l\u00e5ngvarig drift.<\/p>\n<p data-start=\"5418\" data-end=\"5631\"><strong data-start=\"5418\" data-end=\"5442\">GaN-enheter av h\u00f6g kvalitet<\/strong><br data-start=\"5442\" data-end=\"5445\" \/>L\u00e4mplig f\u00f6r tillverkning av avancerade komponenter som HEMTs, Schottky-dioder och n\u00e4sta generations h\u00f6gsp\u00e4nnings GaN-komponenter, som uppfyller str\u00e4nga specifikationer f\u00f6r industri- och konsumentbruk.<\/p>\n<p data-start=\"5633\" data-end=\"5874\">Utrustningens kombination av h\u00f6g automation, flexibelt substratst\u00f6d och optimerad epitaxial tillv\u00e4xt g\u00f6r den till en m\u00e5ngsidig l\u00f6sning f\u00f6r tillverkare som efterstr\u00e4var b\u00e5de h\u00f6gt utbyte och h\u00f6g prestanda p\u00e5 en konkurrensutsatt halvledarmarknad.<\/p>\n<p data-start=\"5633\" data-end=\"5874\"><img decoding=\"async\" class=\"wp-image-2080 size-large aligncenter\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application-1024x578.png\" alt=\"\" width=\"1024\" height=\"578\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application-1024x578.png 1024w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application-300x169.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application-768x433.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application-18x10.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application-600x339.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application.png 1285w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/><\/p>\n<h3 data-section-id=\"6toqgg\" data-start=\"5881\" data-end=\"5890\">VANLIGA FR\u00c5GOR<\/h3>\n<p data-start=\"5892\" data-end=\"6130\"><strong data-start=\"5892\" data-end=\"5960\">1. Vilka skivstorlekar st\u00f6ds av denna GaN-epitaxiutrustning?<\/strong><br data-start=\"5960\" data-end=\"5963\" \/>Systemet st\u00f6der b\u00e5de 6-tums och 8-tums wafers, vilket ger flexibilitet f\u00f6r nuvarande produktionsbehov och m\u00f6jligg\u00f6r framtida skalbarhet i takt med att produktionsbehoven \u00f6kar.<\/p>\n<p data-start=\"6132\" data-end=\"6422\"><strong data-start=\"6132\" data-end=\"6210\">2. Hur s\u00e4kerst\u00e4ller systemet epitaxiell likformighet och l\u00e5g defektt\u00e4thet?<\/strong><br data-start=\"6210\" data-end=\"6213\" \/>Temperaturkontroll i flera zoner, optimerad gasfl\u00f6desdynamik och vertikalt luftfl\u00f6de s\u00e4kerst\u00e4ller j\u00e4mn deponering \u00f6ver wafern, vilket resulterar i j\u00e4mn skikttjocklek, sammans\u00e4ttning och minimala defekter.<\/p>\n<p data-start=\"6424\" data-end=\"6692\"><strong data-start=\"6424\" data-end=\"6508\">3. \u00c4r utrustningen l\u00e4mplig f\u00f6r kontinuerlig industriell produktion av stora volymer?<\/strong><br data-start=\"6508\" data-end=\"6511\" \/>Ja, den \u00e4r konstruerad f\u00f6r oavbruten drift hela dagen med l\u00e5ng felfri drifttid, h\u00f6g genomstr\u00f6mning och reproducerbarhet i processen, vilket g\u00f6r den idealisk f\u00f6r storskalig tillverkning.<\/p>\n<p data-start=\"6694\" data-end=\"6933\"><strong data-start=\"6694\" data-end=\"6746\">4. Kan den hantera olika typer av substrat?<\/strong><br data-start=\"6746\" data-end=\"6749\" \/>Ja, utrustningen \u00e4r kompatibel med flera olika substratmaterial, inklusive standard- och specialwafers f\u00f6r GaN, vilket m\u00f6jligg\u00f6r m\u00e5ngsidig produktion f\u00f6r olika halvledarapplikationer.<\/p>","protected":false},"excerpt":{"rendered":"<p>High-Performance Gallium Nitride (GaN) Epitaxy Equipment \u00e4r ett avancerat epitaxialtillv\u00e4xtsystem som \u00e4r konstruerat f\u00f6r h\u00f6geffektiv produktion av 6-tums och 8-tums GaN-wafers.<\/p>","protected":false},"featured_media":2095,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}}},"product_brand":[],"product_cat":[730],"product_tag":[615,616,485,771,752,767,761,762,749,770,760,769,764,763,753,495,768,766,765,754],"class_list":{"0":"post-2094","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-epitaxy-equipment","7":"product_tag-6-inch-wafer","8":"product_tag-8-inch-wafer","9":"product_tag-automated-wafer-handling","10":"product_tag-continuous-production","11":"product_tag-efem-integration","12":"product_tag-electric-vehicles","13":"product_tag-gallium-nitride-epitaxy","14":"product_tag-gan-epi-wafers","15":"product_tag-high-throughput","16":"product_tag-high-end-gan-devices","17":"product_tag-high-performance-gan-epitaxy-equipment","18":"product_tag-industrial-automation","19":"product_tag-low-defect-density","20":"product_tag-multi-substrate-compatibility","21":"product_tag-multi-zone-temperature-control","22":"product_tag-power-electronics","23":"product_tag-renewable-energy-systems","24":"product_tag-rf-devices","25":"product_tag-split-type-design","26":"product_tag-thick-film-epitaxy","27":"desktop-align-left","28":"tablet-align-left","29":"mobile-align-left","30":"ast-product-gallery-layout-horizontal-slider","31":"ast-product-gallery-with-no-image","32":"ast-product-tabs-layout-horizontal","34":"first","35":"instock","36":"shipping-taxable","37":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product\/2094","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/comments?post=2094"}],"version-history":[{"count":2,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product\/2094\/revisions"}],"predecessor-version":[{"id":2097,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product\/2094\/revisions\/2097"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/media\/2095"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/media?parent=2094"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product_brand?post=2094"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product_cat?post=2094"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product_tag?post=2094"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}