{"id":1981,"date":"2026-03-23T06:13:43","date_gmt":"2026-03-23T06:13:43","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=1981"},"modified":"2026-03-23T06:18:04","modified_gmt":"2026-03-23T06:18:04","slug":"sic-raw-material-synthesis-furnace","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/sv\/product\/sic-raw-material-synthesis-furnace\/","title":{"rendered":"50 kg SiC r\u00e5materialsyntesugn H\u00f6g renhet kiselkarbidkristallberedning"},"content":{"rendered":"

\"\"50 kg SiC Raw Material Synthesis Furnace \u00e4r en specialiserad h\u00f6gtemperaturugn utformad f\u00f6r att producera kiselkarbid (SiC) r\u00e5material med h\u00f6g renhet. Som ett kritiskt halvledar- och keramiskt material anv\u00e4nds SiC i stor utstr\u00e4ckning in kraftelektronik, h\u00f6gtemperaturutrustning, slitstarka material och optiska komponenter.<\/span><\/p>\n

Denna ugn omvandlar r\u00e5material av kisel (Si) och kol (C) till SiC genom en kontrollerad kemisk reaktion vid h\u00f6g temperatur, vilket g\u00f6r den till en viktig del av utrustningen i produktionskedjan f\u00f6r kiselkarbid. Dess design s\u00e4kerst\u00e4ller h\u00f6g renhet, stabil drift och konsekvent prestanda, vilket g\u00f6r det m\u00f6jligt f\u00f6r tillverkare att uppfylla de str\u00e4nga kraven f\u00f6r avancerade halvledare och h\u00f6gpresterande keramiska applikationer.<\/p>\n

Viktiga f\u00f6rdelar<\/strong><\/span><\/h2>\n
    \n
  • Kapacitet f\u00f6r h\u00f6ga temperaturer:<\/strong> Ger ugnstemperaturer p\u00e5 upp till 2400\u00b0C, vilket \u00e4r l\u00e4mpligt f\u00f6r effektiv SiC-syntes.<\/li>\n
  • H\u00f6g renhet Utg\u00e5ng:<\/strong> Utnyttjar r\u00e5material med h\u00f6g renhet och kontroll av inert atmosf\u00e4r f\u00f6r att producera ultrarent SiC.<\/li>\n
  • Stabila prestanda:<\/strong> Den robusta konstruktionen ger tillf\u00f6rlitlig drift f\u00f6r l\u00e5ngvarig, kontinuerlig produktion.<\/li>\n
  • L\u00e5g kontaminering:<\/strong> Inert atmosf\u00e4r och rena material minimerar inkorporering av f\u00f6roreningar.<\/li>\n
  • Stor lastkapacitet:<\/strong> St\u00f6der upp till 50 kg r\u00e5material, vilket f\u00f6rb\u00e4ttrar produktiviteten och kompatibiliteten med flera kristallugnar.<\/li>\n
  • Precisionskontroll:<\/strong> Avancerad temperatur- och tryckreglering, med valfri dubbel temperaturm\u00e4tning och infrar\u00f6d \u00f6vervakning f\u00f6r processoptimering.<\/li>\n
  • Flexibel konfiguration:<\/strong> Modul\u00e4r design m\u00f6jligg\u00f6r installation sida vid sida f\u00f6r att spara utrymme och optimera anl\u00e4ggningsutnyttjandet.<\/li>\n<\/ul>\n

    Tekniska specifikationer<\/strong><\/span><\/h2>\n
    \n
    \n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
    Funktion<\/th>\nSpecifikation<\/th>\n<\/tr>\n<\/thead>\n
    M\u00e5tt (L\u00d7B\u00d7H)<\/td>\n4000\u00d73400\u00d74300 mm (anpassningsbar)<\/td>\n<\/tr>\n
    Diameter p\u00e5 ugnskammare<\/td>\n1100 mm<\/td>\n<\/tr>\n
    Lastkapacitet<\/td>\n50 kg<\/td>\n<\/tr>\n
    Ultimat vakuum<\/td>\n10-\u00b2 Pa (2 timmar efter start av molekyl\u00e4r pump)<\/td>\n<\/tr>\n
    Kammartryck Stighastighet<\/td>\n\u226410 Pa\/h (efter kalcinering)<\/td>\n<\/tr>\n
    Slag f\u00f6r nedre ugnsk\u00e5pa<\/td>\n1500 mm<\/td>\n<\/tr>\n
    Uppv\u00e4rmningsmetod<\/td>\nInduktionsv\u00e4rme<\/td>\n<\/tr>\n
    Maximal temperatur<\/td>\n2400\u00b0C<\/td>\n<\/tr>\n
    Str\u00f6mf\u00f6rs\u00f6rjning f\u00f6r uppv\u00e4rmning<\/td>\n2\u00d740 kW<\/td>\n<\/tr>\n
    Temperaturm\u00e4tning<\/td>\nInfrar\u00f6d termometer med dubbla f\u00e4rger<\/td>\n<\/tr>\n
    Temperaturomr\u00e5de<\/td>\n900-3000\u00b0C<\/td>\n<\/tr>\n
    Noggrannhet f\u00f6r temperaturreglering<\/td>\n\u00b11\u00b0C<\/td>\n<\/tr>\n
    Omr\u00e5de f\u00f6r tryckreglering<\/td>\n1-700 mbar<\/td>\n<\/tr>\n
    Noggrannhet f\u00f6r tryckreglering<\/td>\n1-5 mbar (beroende p\u00e5 omr\u00e5de)<\/td>\n<\/tr>\n
    Metod f\u00f6r lastning<\/td>\nL\u00e4gre lastning; valfri avlastningsgaffeltruck och dubbla temperaturpunkter<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

    F\u00f6rdelar med design<\/strong><\/span><\/h2>\n
      \n
    1. H\u00f6gkapacitetsladdning g\u00f6r att en enda ugn kan f\u00f6rs\u00f6rja flera ugnar med l\u00e5nga kristaller, vilket f\u00f6rb\u00e4ttrar produktionseffektiviteten.<\/li>\n
    2. Dubbel str\u00f6mf\u00f6rs\u00f6rjning med identisk frekvens s\u00e4kerst\u00e4ller exakt axiell temperaturgradientkontroll.<\/li>\n
    3. Infrar\u00f6d temperaturm\u00e4tning upptill och nedtill underl\u00e4ttar temperatur\u00f6vervakning i realtid och fels\u00f6kning av processer.<\/li>\n
    4. H\u00f6g precision i vakuum-, tryck- och temperaturkontroll s\u00e4kerst\u00e4ller syntesen av ultrarena SiC-r\u00e5varor.<\/li>\n
    5. S\u00e4kert och tillf\u00f6rlitligt system f\u00f6r lastning\/lossning, som tillval utrustat med en gaffeltruck f\u00f6r lossning.<\/li>\n
    6. Vridspj\u00e4llsventiler med h\u00f6g precision och massfl\u00f6desregulatorer uppr\u00e4tth\u00e5ller en stabil processatmosf\u00e4r.<\/li>\n
    7. Modul\u00e4r design m\u00f6jligg\u00f6r placering sida vid sida, vilket optimerar golvytan och utnyttjandet av anl\u00e4ggningen.<\/li>\n<\/ol>\n

      \"\"<\/p>\n

      Till\u00e4mpningar och f\u00f6rdelar<\/strong><\/span><\/h2>\n

      SiC Raw Material Synthesis Furnace producerar effektivt kiselkarbid med h\u00f6g renhet och uppn\u00e5r renheter p\u00e5 99,999% eller h\u00f6gre. Det syntetiserade SiC-r\u00e5materialet \u00e4r idealiskt f\u00f6r:<\/p>\n

        \n
      • Enkelkristalltillv\u00e4xt:<\/strong> Tillverkar h\u00f6gkvalitativa SiC-kristaller f\u00f6r kraftkomponenter som MOSFETs och dioder.<\/li>\n
      • Kraftelektronik:<\/strong> M\u00f6jligg\u00f6r enheter med h\u00f6g sp\u00e4nning, l\u00e5g f\u00f6rlust och h\u00f6gfrekvent prestanda.<\/li>\n
      • Fordon och f\u00f6rnybar energi:<\/strong> F\u00f6rb\u00e4ttrar elfordon, solcellsv\u00e4xelriktare och andra h\u00f6gpresterande applikationer.<\/li>\n
      • Avancerade keramer och optiska apparater:<\/strong> Ut\u00f6kade SiC-till\u00e4mpningar ut\u00f6ver halvledare till industrikeramik och optiska komponenter.<\/li>\n<\/ul>\n

        ZMSH tj\u00e4nster<\/strong><\/span><\/h2>\n

        ZMSH tillhandah\u00e5ller komplett processupport fr\u00e5n ugnsdesign och tillverkning till eftermarknadsservice. Detta inkluderar anpassning av utrustning, processoptimering och teknisk utbildning. Med avancerad teknik och omfattande branscherfarenhet s\u00e4kerst\u00e4ller ZMSH h\u00f6geffektiv, stabil drift med l\u00e5g energif\u00f6rbrukning och erbjuder snabb teknisk support dygnet runt f\u00f6r att hj\u00e4lpa kunderna att uppn\u00e5 storskalig produktion av kiselkarbidr\u00e5varor med h\u00f6g renhet.<\/p>\n

        Vanliga fr\u00e5gor och svar (FAQ)<\/strong><\/span><\/h2>\n

        F1: Vad \u00e4r syftet med en SiC-r\u00e5materialsyntesugn?<\/strong>
        A: Den anv\u00e4nds f\u00f6r att producera kiselkarbid (SiC) r\u00e5material med h\u00f6g renhet via kemiska reaktioner vid h\u00f6g temperatur, vilket \u00e4r viktigt f\u00f6r halvledare, keramik och optiska komponenter.<\/p>\n

        F2: Varf\u00f6r \u00e4r en SiC-syntesugn viktig f\u00f6r halvledarproduktion?<\/strong>
        A: Det m\u00f6jligg\u00f6r produktion av ultrarent SiC, vilket \u00e4r avg\u00f6rande f\u00f6r att odla h\u00f6gkvalitativa SiC-kristaller som anv\u00e4nds i kraftelektronik och h\u00f6gfrekventa enheter.<\/p>\n

        F3: Vad \u00e4r ugnens maximala lastkapacitet?<\/strong>
        A: Standardlastkapaciteten \u00e4r 50 kg, vilket m\u00f6jligg\u00f6r storskalig produktion och matning av flera kristallugnar.<\/p>\n

        Q4: Vilka \u00e4r preciseringarna f\u00f6r ugnens temperatur- och tryckreglering?<\/strong>
        A: Temperaturkontrollens noggrannhet \u00e4r \u00b11\u00b0C. Tryckkontrollens noggrannhet varierar fr\u00e5n \u00b10,1 mbar till \u00b10,5 mbar beroende p\u00e5 tryckomr\u00e5det, vilket s\u00e4kerst\u00e4ller stabil SiC-syntes med h\u00f6g renhet.<\/p>","protected":false},"excerpt":{"rendered":"

        50 kg SiC Raw Material Synthesis Furnace \u00e4r en specialiserad h\u00f6gtemperaturugn utformad f\u00f6r att producera kiselkarbid (SiC) r\u00e5material med h\u00f6g renhet. Som ett kritiskt halvledar- och keramiskt material anv\u00e4nds SiC i stor utstr\u00e4ckning i kraftelektronik, h\u00f6gtemperaturanordningar, slitstarka material och optiska komponenter.<\/p>","protected":false},"featured_media":1984,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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