{"id":1968,"date":"2026-03-23T06:01:20","date_gmt":"2026-03-23T06:01:20","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=1968"},"modified":"2026-03-23T06:03:52","modified_gmt":"2026-03-23T06:03:52","slug":"lpcvd-oxidation-furnace","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/sv\/product\/lpcvd-oxidation-furnace\/","title":{"rendered":"6\/8\/12-tums LPCVD-oxideringsugn f\u00f6r tunnfilmsdeponering med h\u00f6g enhetlighet f\u00f6r avancerad halvledartillverkning"},"content":{"rendered":"

6\/8\/12-tums LPCVD-oxideringsugn \u00e4r ett toppmodernt verktyg f\u00f6r halvledartillverkning som \u00e4r utformat f\u00f6r exakt och enhetlig tunnfilmsdeponering. Den anv\u00e4nds ofta f\u00f6r att odla h\u00f6gkvalitativa polysilikon-, kiselnitrid- och kiseloxidskikt p\u00e5 wafers, vilket s\u00e4kerst\u00e4ller konsekvent prestanda f\u00f6r krafthalvledare, avancerade substrat och andra h\u00f6gprecisionsapplikationer.<\/p>\n

Utrustningen kombinerar avancerad l\u00e5gtrycksdeponeringsteknik, intelligent temperaturkontroll och en extremt ren processdesign f\u00f6r att uppn\u00e5 exceptionell tunnfilmslikformighet och h\u00f6g genomstr\u00f6mning. Den vertikala reaktorkonfigurationen m\u00f6jligg\u00f6r effektiv batchbearbetning, medan den termiska deponeringsprocessen undviker plasmainducerade skador, vilket g\u00f6r den idealisk f\u00f6r kritiska processer som bildning av gate-dielektrikum, sp\u00e4nningsbuffrande lager och skyddsoxider.<\/p>\n

\"\"<\/p>\n

\n

Viktiga f\u00f6rdelar<\/strong><\/span><\/h2>\n
    \n
  • Tunnfilmsdeponering med h\u00f6g likformighet:<\/strong> L\u00e5gtrycksmilj\u00f6n (0,1-10 Torr) s\u00e4kerst\u00e4ller en enhetlighet mellan skivor och inom skivor p\u00e5 \u00b11,5%, vilket \u00e4r avg\u00f6rande f\u00f6r tillverkning av h\u00f6gpresterande enheter.<\/li>\n
  • Vertikal reaktorkonstruktion:<\/strong> Hanterar 150-200 wafers per batch, vilket f\u00f6rb\u00e4ttrar genomstr\u00f6mningen och produktionseffektiviteten f\u00f6r halvledartillverkning i industriell skala.<\/li>\n
  • Termisk deponeringsprocess (500-900\u00b0C):<\/strong> Ger skonsam, plasmafri deponering f\u00f6r att skydda k\u00e4nsliga substrat och bibeh\u00e5lla h\u00f6g filmkvalitet.<\/li>\n
  • Intelligent temperaturkontroll:<\/strong> \u00d6vervakning och justering i realtid med \u00b11\u00b0C noggrannhet f\u00f6r stabila och repeterbara resultat.<\/li>\n
  • Ultrarent processkammare:<\/strong> Minimerar partikelkontaminering, vilket st\u00f6der SiC och andra avancerade wafer-material.<\/li>\n
  • Anpassningsbar konfiguration:<\/strong> Flexibel design som klarar olika processkrav, inklusive torr eller v\u00e5t oxidation och olika waferstorlekar.<\/li>\n<\/ul>\n

    Tekniska specifikationer<\/strong><\/span><\/h2>\n
    \n
    \n\n\n\n\n\n\n\n\n\n\n\n\n\n
    Funktion<\/th>\nSpecifikation<\/th>\n<\/tr>\n<\/thead>\n
    Wafer-storlek<\/td>\n6\/8\/12 tum<\/td>\n<\/tr>\n
    Kompatibla material<\/td>\nPolysilikon, kiselnitrid, kiseloxid<\/td>\n<\/tr>\n
    Oxideringstyp<\/td>\nTorr syrgas \/ v\u00e5t syrgas (DCE, HCL)<\/td>\n<\/tr>\n
    Omr\u00e5de f\u00f6r processtemperatur<\/td>\n500\u00b0C-900\u00b0C<\/td>\n<\/tr>\n
    Zon f\u00f6r konstant temperatur<\/td>\n\u2265800 mm<\/td>\n<\/tr>\n
    Noggrannhet f\u00f6r temperaturreglering<\/td>\n\u00b11\u00b0C<\/td>\n<\/tr>\n
    Partikelkontroll<\/td>\n0,32 \u03bcm), 0,32 \u03bcm), 0,226 \u03bcm)<\/td>\n<\/tr>\n
    Filmens tjocklek<\/td>\nNIT1500 \u00b150 \u00c5<\/td>\n<\/tr>\n
    Enhetlighet<\/td>\nInom wafer <2,5%, wafer-till-wafer <2,5%, batch-till-batch <2%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

    Produktfunktioner<\/strong><\/span><\/h2>\n
      \n
    • Automatiserad waferhantering garanterar h\u00f6g s\u00e4kerhet och driftseffektivitet.<\/li>\n
    • Den ultrarena processkammaren minskar risken f\u00f6r kontaminering och bibeh\u00e5ller en j\u00e4mn filmkvalitet.<\/li>\n
    • \u00d6verl\u00e4gsen j\u00e4mnhet i filmtjockleken st\u00f6der avancerad nodtillverkning.<\/li>\n
    • Intelligent temperatur- och tryckreglering i realtid m\u00f6jligg\u00f6r exakta processjusteringar.<\/li>\n
    • SiC-skivans st\u00f6d minskar friktion och partikelgenerering, vilket f\u00f6rl\u00e4nger skivans livsl\u00e4ngd.<\/li>\n
    • Modul\u00e4r design m\u00f6jligg\u00f6r anpassning till olika applikationer och processbehov.<\/li>\n<\/ul>\n

      Princip f\u00f6r deponeringsprocess\"\"<\/strong><\/span><\/h2>\n
        \n
      1. Gas Introduktion:<\/strong> Reaktantgaserna f\u00f6rs in i r\u00f6ret under l\u00e5gt tryck (0,25-1 Torr).<\/li>\n
      2. Ytdiffusion:<\/strong> Molekylerna diffunderar fritt \u00f6ver waferytan, vilket ger en enhetlig t\u00e4ckning.<\/li>\n
      3. Adsorption:<\/strong> Reaktanter f\u00e4ster p\u00e5 waferytan f\u00f6re kemisk reaktion.<\/li>\n
      4. Kemisk reaktion:<\/strong> Termisk s\u00f6nderdelning bildar den \u00f6nskade tunna filmen direkt p\u00e5 substratet.<\/li>\n
      5. Borttagning av biprodukter:<\/strong> Icke-reaktiva gaser evakueras f\u00f6r att bibeh\u00e5lla renheten och f\u00f6rhindra st\u00f6rningar.<\/li>\n
      6. Filmformation:<\/strong> Reaktionsprodukterna ackumuleras gradvis och bildar ett enhetligt, stabilt tunnfilmsskikt.<\/li>\n<\/ol>\n

        Till\u00e4mpningar<\/strong><\/span><\/h2>\n
          \n
        • Sk\u00e4rmande oxidskikt:<\/strong> Skyddar kiselskivor fr\u00e5n kontaminering och minskar jonkanalisering under dopningsprocesser.<\/li>\n<\/ul>\n

          \"\"<\/p>\n

            \n
          • Pad Oxide Layer:<\/strong> Fungerar som en sp\u00e4nningsbuffert mellan kisel- och kiselnitridskikten, vilket f\u00f6rhindrar sprickbildning i skivan och f\u00f6rb\u00e4ttrar utbytet.<\/li>\n<\/ul>\n

            \"\"<\/p>\n

              \n
            • Gate Oxide Layer:<\/strong> Utg\u00f6r det dielektriska skiktet i MOS-strukturer, vilket s\u00e4kerst\u00e4ller exakt str\u00f6mledning och f\u00e4lteffektkontroll.<\/li>\n<\/ul>\n

              \"\"<\/p>\n

              Systemkonfigurationer<\/strong><\/span><\/h2>\n
                \n
              • Vertikal LPCVD:<\/strong> Processgaserna fl\u00f6dar fr\u00e5n topp till botten, vilket ger en j\u00e4mn deponering p\u00e5 alla wafrar i en batch.<\/li>\n<\/ul>\n

                \"\"<\/p>\n

                  \n
                • Horisontell LPCVD:<\/strong> Gaser fl\u00f6dar l\u00e4ngs substraten, vilket \u00e4r l\u00e4mpligt f\u00f6r kontinuerlig produktion av stora volymer, \u00e4ven om deponeringstjockleken kan variera n\u00e5got n\u00e4ra inloppssidan.<\/li>\n<\/ul>\n

                  \"\"<\/p>\n

                  Vanliga fr\u00e5gor och svar<\/strong><\/span><\/h2>\n

                  Q1: Vad anv\u00e4nds LPCVD fr\u00e4mst till?<\/strong>
                  A: LPCVD \u00e4r en tunnfilmsdeponeringsprocess med l\u00e5gt tryck som ofta anv\u00e4nds vid halvledartillverkning f\u00f6r polysilikon-, kiselnitrid- och kiseloxiddeponering, vilket m\u00f6jligg\u00f6r enhetliga och h\u00f6gkvalitativa filmer f\u00f6r avancerad tillverkning av enheter.<\/p>\n

                  Q2: Hur skiljer sig LPCVD fr\u00e5n PECVD?<\/strong>
                  Svar: LPCVD bygger p\u00e5 termisk aktivering under l\u00e5gt tryck f\u00f6r att producera filmer med h\u00f6g renhet, medan PECVD anv\u00e4nder plasma vid l\u00e4gre temperaturer f\u00f6r snabbare deponering, ofta med n\u00e5got l\u00e4gre filmkvalitet.<\/p>\n

                  F3: Vilka skivstorlekar och material \u00e4r kompatibla med denna LPCVD-oxideringsugn?<\/strong>
                  A: Denna ugn st\u00f6der 6-tums, 8-tums och 12-tums wafers och \u00e4r kompatibel med polysilikon, kiselnitrid, kiseloxid och SiC-wafers, vilket ger flexibilitet f\u00f6r olika halvledartill\u00e4mpningar.<\/p>\n

                  Q4: Kan LPCVD-oxideringsugnen anpassas f\u00f6r specifika processer?<\/strong>
                  S: Ja, systemet har modul\u00e4ra konfigurationer, inklusive justerbara temperaturzoner, gasfl\u00f6deskontroll och oxidationsl\u00e4gen (torr eller v\u00e5t), vilket g\u00f6r att det kan uppfylla olika processkrav f\u00f6r b\u00e5de forskning och produktion i industriell skala.<\/p>","protected":false},"excerpt":{"rendered":"

                  Oxidationsugnen 6\/8\/12-tums LPCVD (Low Pressure Chemical Vapor Deposition) \u00e4r ett toppmodernt verktyg f\u00f6r halvledartillverkning som \u00e4r utformat f\u00f6r exakt och enhetlig tunnfilmsdeponering. Den anv\u00e4nds ofta f\u00f6r att odla h\u00f6gkvalitativa polysilikon-, kiselnitrid- och kiseloxidskikt p\u00e5 wafers, vilket s\u00e4kerst\u00e4ller konsekvent prestanda f\u00f6r krafthalvledare, avancerade substrat och andra h\u00f6gprecisionsapplikationer.<\/p>","protected":false},"featured_media":1969,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}}},"product_brand":[],"product_cat":[15],"product_tag":[468,485,488,480,484,479,476,469,477,470,481,472,110,475,482,102,473,474,486,471,487,478,483],"class_list":{"0":"post-1968","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-crystal-growth-furnace","7":"product_tag-6-8-12-inch-lpcvd-oxidation-furnace","8":"product_tag-automated-wafer-handling","9":"product_tag-customizable-lpcvd","10":"product_tag-gate-oxide","11":"product_tag-high-uniformity-thin-film","12":"product_tag-horizontal-lpcvd","13":"product_tag-low-pressure-chemical-vapor-deposition","14":"product_tag-lpcvd","15":"product_tag-lpcvd-vs-pecvd","16":"product_tag-oxygen-furnace","17":"product_tag-pad-oxide","18":"product_tag-polysilicon","19":"product_tag-semiconductor-equipment","20":"product_tag-semiconductor-manufacturing","21":"product_tag-shielding-oxide","22":"product_tag-sic-wafer","23":"product_tag-silicon-nitride","24":"product_tag-silicon-oxide","25":"product_tag-temperature-control","26":"product_tag-thin-film-deposition","27":"product_tag-ultra-clean-chamber","28":"product_tag-vertical-lpcvd","29":"product_tag-wafer-processing","30":"desktop-align-left","31":"tablet-align-left","32":"mobile-align-left","33":"ast-product-gallery-layout-horizontal-slider","34":"ast-product-tabs-layout-horizontal","36":"first","37":"instock","38":"shipping-taxable","39":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product\/1968","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/comments?post=1968"}],"version-history":[{"count":3,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product\/1968\/revisions"}],"predecessor-version":[{"id":1999,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product\/1968\/revisions\/1999"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/media\/1969"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/media?parent=1968"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product_brand?post=1968"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product_cat?post=1968"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/product_tag?post=1968"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}