{"id":2449,"date":"2026-05-06T05:10:20","date_gmt":"2026-05-06T05:10:20","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?p=2449"},"modified":"2026-05-06T05:12:07","modified_gmt":"2026-05-06T05:12:07","slug":"why-silicon-carbide-sic-chips-are-so-difficult-to-manufacture","status":"publish","type":"post","link":"https:\/\/www.zmsh-semitech.com\/sv\/why-silicon-carbide-sic-chips-are-so-difficult-to-manufacture\/","title":{"rendered":"Varf\u00f6r kiselkarbidchips (SiC) \u00e4r s\u00e5 sv\u00e5ra att tillverka: En djupdykning med 20+ fr\u00e5gor och svar om utrustning"},"content":{"rendered":"<p>Kiselkarbid (SiC) har blivit ett av de viktigaste materialen i n\u00e4sta generations kraftelektronik. Det m\u00f6jligg\u00f6r enheter med h\u00f6gre sp\u00e4nning, h\u00f6gre temperatur och h\u00f6gre effektivitet j\u00e4mf\u00f6rt med traditionellt kisel. Bakom dessa f\u00f6rdelar d\u00f6ljer sig dock en h\u00e5rd verklighet: SiC-chip \u00e4r extremt sv\u00e5ra och dyra att tillverka i stor skala.<\/p>\n\n\n\n<p>Till skillnad fr\u00e5n konventionell kiselbearbetning inneb\u00e4r SiC-tillverkning extrema temperaturer, ultrah\u00e5rda material och sn\u00e4va processf\u00f6nster. \u00c4ven mindre instabilitet i utrustningen kan leda till kristalldefekter, waferbrott eller produktionsf\u00f6rluster.<\/p>\n\n\n\n<p>Den h\u00e4r artikeln bryter ner hela SiC-produktionskedjan genom ett strukturerat ramverk med fr\u00e5gor och svar om 20+ utrustningar och f\u00f6rklarar varf\u00f6r detta material \u00e4r s\u00e5 utmanande att omvandla till tillf\u00f6rlitliga halvledarenheter.<\/p>\n\n\n\n<figure class=\"wp-block-image aligncenter size-full\"><a href=\"https:\/\/www.zmsh-semitech.com\/sv\/produkt\/sic-crystal-growth-furnace-pvt-lpe-ht-cvd-for-high-quality-silicon-carbide-single-crystal-production\/\"><img fetchpriority=\"high\" decoding=\"async\" width=\"750\" height=\"648\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/sic_crystal_growth_furnace_pvt_lpe_ht_cvd_high_quality_sic_single_crystal_growth_method2.webp\" alt=\"\" class=\"wp-image-2288\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/sic_crystal_growth_furnace_pvt_lpe_ht_cvd_high_quality_sic_single_crystal_growth_method2.webp 750w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/sic_crystal_growth_furnace_pvt_lpe_ht_cvd_high_quality_sic_single_crystal_growth_method2-300x259.webp 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/sic_crystal_growth_furnace_pvt_lpe_ht_cvd_high_quality_sic_single_crystal_growth_method2-14x12.webp 14w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/sic_crystal_growth_furnace_pvt_lpe_ht_cvd_high_quality_sic_single_crystal_growth_method2-600x518.webp 600w\" sizes=\"(max-width: 750px) 100vw, 750px\" \/><\/a><\/figure>\n\n\n\n<h1 class=\"wp-block-heading\">1. \u00d6versikt \u00f6ver tillverkning av SiC: Tv\u00e5 viktiga stadier<\/h1>\n\n\n\n<p>Tillverkningen av SiC-enheter \u00e4r i allm\u00e4nhet indelad i tv\u00e5 huvudsteg:<\/p>\n\n\n\n<ol class=\"wp-block-list\">\n<li><strong>Kristalltillv\u00e4xt och bearbetning av wafers<\/strong><\/li>\n\n\n\n<li><strong>Tillverkning och f\u00f6rpackning av enheter<\/strong><\/li>\n<\/ol>\n\n\n\n<p>Varje etapp kr\u00e4ver h\u00f6gspecialiserad utrustning som arbetar under extrema fysiska f\u00f6rh\u00e5llanden.<\/p>\n\n\n\n<h1 class=\"wp-block-heading\">2. Varf\u00f6r SiC-kristalltillv\u00e4xt \u00e4r s\u00e5 sv\u00e5r<\/h1>\n\n\n\n<p>Till skillnad fr\u00e5n kisel kan SiC inte odlas fr\u00e5n en enkel sm\u00e4lta. Det kr\u00e4ver sublimeringsbaserad tillv\u00e4xt vid extremt h\u00f6ga temperaturer (&gt;2000\u00b0C). Detta skapar flera tekniska utmaningar.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Q1: Vilka \u00e4r de viktigaste SiC-kristalltillv\u00e4xtutrustningssystemen?<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Ugn f\u00f6r syntes av SiC-pulver<\/li>\n\n\n\n<li><a href=\"https:\/\/www.zmsh-semitech.com\/sv\/produkt-kategori\/crystal-growth-furnace\/\"><mark style=\"background-color:rgba(0, 0, 0, 0);color:#0693e3\" class=\"has-inline-color\">Ugn f\u00f6r tillv\u00e4xt av enkristallina SiC-kristaller<\/mark><\/a><\/li>\n\n\n\n<li>Diamant multiwire-s\u00e5g<\/li>\n\n\n\n<li>Slip- och polermaskiner<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">F2: Varf\u00f6r \u00e4r SiC-pulversyntes s\u00e5 sv\u00e5r?<\/h2>\n\n\n\n<p>Viktiga utmaningar \u00e4r bland annat:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Stabilitet vid extremt h\u00f6g temperatur<\/li>\n\n\n\n<li>Tillf\u00f6rlitlig vakuumf\u00f6rsegling<\/li>\n\n\n\n<li>Exakt termisk kontroll<\/li>\n\n\n\n<li>Enhetlighet i kemisk reaktion<\/li>\n<\/ul>\n\n\n\n<p>\u00c4ven sm\u00e5 avvikelser i temperatur eller tryck kan f\u00f6r\u00e4ndra pulverrenheten och direkt p\u00e5verka kristallkvaliteten.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">F3: Varf\u00f6r \u00e4r SiC-kristalltillv\u00e4xtugnstekniken s\u00e5 komplex?<\/h2>\n\n\n\n<p>De st\u00f6rsta sv\u00e5righeterna \u00e4r f\u00f6ljande:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Konstruktion av storskalig h\u00f6gtemperaturugn<\/li>\n\n\n\n<li>Stabil vakuum-milj\u00f6 \u00f6ver 2000\u00b0C<\/li>\n\n\n\n<li>Val av material f\u00f6r sm\u00e4ltdegel (grafitbaserade system)<\/li>\n\n\n\n<li>Exakt kontroll av gasfl\u00f6det<\/li>\n\n\n\n<li>Styrning av det termiska f\u00e4ltets enhetlighet<\/li>\n<\/ul>\n\n\n\n<p>All instabilitet leder till:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Polykristallina defekter<\/li>\n\n\n\n<li>F\u00f6rskjutningar<\/li>\n\n\n\n<li>Avkastningsf\u00f6rlust i wafers<\/li>\n<\/ul>\n\n\n\n<hr class=\"wp-block-separator has-alpha-channel-opacity\"\/>\n\n\n\n<h1 class=\"wp-block-heading\">3. Sk\u00e4rning och bearbetning av wafers: Mekaniska gr\u00e4nser f\u00f6r SiC<\/h1>\n\n\n\n<p>8<\/p>\n\n\n\n<p>SiC \u00e4r ett av de h\u00e5rdaste halvledarmaterialen, n\u00e4st efter diamant i h\u00e5rdhet. Detta g\u00f6r mekanisk bearbetning extremt utmanande.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Q4: Varf\u00f6r \u00e4r diamantvajers\u00e5gning sv\u00e5rt f\u00f6r SiC?<\/h2>\n\n\n\n<p>Viktiga tekniska fr\u00e5gor:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Instabilitet i tr\u00e5dsp\u00e4nningen<\/li>\n\n\n\n<li>Kontroll av vibrationer vid kapning<\/li>\n\n\n\n<li>Slitage av uppslamningspartiklar<\/li>\n\n\n\n<li>V\u00e4rmeackumulering under skivning<\/li>\n<\/ul>\n\n\n\n<p>Om den inte kontrolleras p\u00e5 r\u00e4tt s\u00e4tt:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>\u00d6kad avverkning av kanter<\/li>\n\n\n\n<li>Inre mikrosprickor bildas<\/li>\n\n\n\n<li>Wafers styrka minskar<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">Q5: Vad g\u00f6r SiC-slipning sv\u00e5r?<\/h2>\n\n\n\n<p>Utmaningar inkluderar:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>H\u00e5rdhet leder till l\u00e5ngsam materialavverkning<\/li>\n\n\n\n<li>Skadad ytskiktsbildning<\/li>\n\n\n\n<li>Ackumulering av kvarvarande stress<\/li>\n\n\n\n<li>Kraftig skevhet hos wafern efter gallring<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">F6: Varf\u00f6r \u00e4r SiC-polering mer komplex \u00e4n kisel?<\/h2>\n\n\n\n<p>Utmaningar vid polering:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>H\u00f6g styvhet orsakar oj\u00e4mn tryckf\u00f6rdelning<\/li>\n\n\n\n<li>Termisk deformation av polerrondeller<\/li>\n\n\n\n<li>Sv\u00e5righet att uppn\u00e5 planhet p\u00e5 atomniv\u00e5<\/li>\n\n\n\n<li>Det \u00e4r sv\u00e5rare att avl\u00e4gsna skador under markytan<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">4. Tillverkning av enheter: Extrema v\u00e4rme- och plasmabetingelser<\/h1>\n\n\n\n<p>8<\/p>\n\n\n\n<p>Efter waferpreparering introducerar tillverkningen av SiC-enheter ytterligare ett lager av komplexitet: <strong>extrema termiska och plasmabehandlingsmilj\u00f6er<\/strong>.<\/p>\n\n\n\n<hr class=\"wp-block-separator has-alpha-channel-opacity\"\/>\n\n\n\n<h2 class=\"wp-block-heading\">F7: Vilken utrustning anv\u00e4nds vid tillverkning av SiC-enheter?<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Reaktorer f\u00f6r SiC-epitaxi<\/li>\n\n\n\n<li>System f\u00f6r torr etsning<\/li>\n\n\n\n<li>Jonimplantatorer f\u00f6r h\u00f6ga temperaturer<\/li>\n\n\n\n<li>Gl\u00f6dgningsugnar f\u00f6r h\u00f6g temperatur<\/li>\n\n\n\n<li>Oxidationsugnar<\/li>\n\n\n\n<li>System f\u00f6r slipning av baksidor<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">F8: Varf\u00f6r \u00e4r SiC-epitaxi sv\u00e5rt?<\/h2>\n\n\n\n<p>Viktiga utmaningar:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Tillv\u00e4xtmilj\u00f6 vid h\u00f6g temperatur<\/li>\n\n\n\n<li>Instabilitet i gasfl\u00f6det<\/li>\n\n\n\n<li>Kontroll av gr\u00e4nssnittsdefekter<\/li>\n\n\n\n<li>Likformig tjocklek \u00f6ver 200 mm wafers<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">F9: Vad \u00e4r det som g\u00f6r SiC-plasmaetsning sv\u00e5rt?<\/h2>\n\n\n\n<p>Fr\u00e5gorna inkluderar:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Stark kemisk best\u00e4ndighet hos SiC<\/li>\n\n\n\n<li>Kammarkorrosion fr\u00e5n aggressiv plasma<\/li>\n\n\n\n<li>L\u00e5g etshastighet j\u00e4mf\u00f6rt med kisel<\/li>\n\n\n\n<li>Processinstabilitet under plasma med h\u00f6g energi<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">Q10: Varf\u00f6r \u00e4r jonimplantation sv\u00e5rare f\u00f6r SiC?<\/h2>\n\n\n\n<p>SiC kr\u00e4ver:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Implantation vid h\u00f6g temperatur<\/li>\n\n\n\n<li>Gl\u00f6dgning med djup dopantaktivering<\/li>\n<\/ul>\n\n\n\n<p>Utmaningar:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Dopantaktiveringseffektiviteten \u00e4r l\u00e5g<\/li>\n\n\n\n<li>\u00c5terst\u00e4llning av kristallskador \u00e4r sv\u00e5rt<\/li>\n\n\n\n<li>Utrustningen m\u00e5ste t\u00e5la extrema termiska cykler<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">Fr\u00e5ga 11: Varf\u00f6r \u00e4r gl\u00f6dgning vid h\u00f6g temperatur kritisk?<\/h2>\n\n\n\n<p>Gl\u00f6dgning m\u00e5ste reparera implantatskador, men:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Kr\u00e4ver stabilitet vid extremt h\u00f6ga temperaturer<\/li>\n\n\n\n<li>Snabb termisk cykling kan orsaka sprickbildning i wafern<\/li>\n\n\n\n<li>Det \u00e4r sv\u00e5rt med j\u00e4mn uppv\u00e4rmning p\u00e5 stora wafers<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">5. F\u00f6r\u00e4dling i sista ledet: Avkastningen avg\u00f6r vinsten<\/h1>\n\n\n\n<h2 class=\"wp-block-heading\">Q12: Varf\u00f6r \u00e4r det sv\u00e5rt att tunna ut baksidan?<\/h2>\n\n\n\n<p>Problemen inkluderar:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Tjocklekskontroll p\u00e5 mikroniv\u00e5<\/li>\n\n\n\n<li>Mikrosprickbildning<\/li>\n\n\n\n<li>Stressinducerad skevhet hos wafers<\/li>\n\n\n\n<li>Br\u00e4cklig waferhantering efter gallring<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">Q13: Varf\u00f6r h\u00e4nder SiC-wafers warpage mer \u00e4n kisel?<\/h2>\n\n\n\n<p>F\u00f6r att..:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>H\u00f6gre inre stress<\/li>\n\n\n\n<li>Starkare gitterstyvhet<\/li>\n\n\n\n<li>Oj\u00e4mn materialavverkning under slipning<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">F14: Varf\u00f6r \u00e4r waferhantering extremt riskfyllt?<\/h2>\n\n\n\n<p>Tunna SiC-wafers \u00e4r:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Sk\u00f6r<\/li>\n\n\n\n<li>Stressk\u00e4nslig<\/li>\n\n\n\n<li>L\u00e4tt att spr\u00e4cka under automatiserad \u00f6verf\u00f6ring<\/li>\n<\/ul>\n\n\n\n<p>\u00c4ven sm\u00e5 vibrationer kan leda till katastrofala avkastningsf\u00f6rluster.<\/p>\n\n\n\n<h1 class=\"wp-block-heading\">6. Utmaning p\u00e5 systemniv\u00e5: 20+ utrustningar m\u00e5ste fungera tillsammans<\/h1>\n\n\n\n<p>En komplett produktionslinje f\u00f6r SiC kr\u00e4ver mer \u00e4n 20 olika typer av precisionsutrustning som arbetar synkroniserat:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Ugnar f\u00f6r kristalltillv\u00e4xt<\/li>\n\n\n\n<li>Vajers\u00e5gsystem<\/li>\n\n\n\n<li>Slipmaskiner<\/li>\n\n\n\n<li>Poleringssystem<\/li>\n\n\n\n<li>Reaktorer f\u00f6r epitaxi<\/li>\n\n\n\n<li>Etsningssystem<\/li>\n\n\n\n<li>Verktyg f\u00f6r jonimplantation<\/li>\n\n\n\n<li>Gl\u00f6dgningsugnar<\/li>\n\n\n\n<li>Oxidationsugnar<\/li>\n\n\n\n<li>System f\u00f6r bakslipning<\/li>\n<\/ul>\n\n\n\n<p>Den verkliga utmaningen \u00e4r inte bara enskilda maskiner - utan processintegrationens stabilitet i hela kedjan.<\/p>\n\n\n\n<h1 class=\"wp-block-heading\">7. Varf\u00f6r SiC-tillverkning \u00e4r s\u00e5 dyr<\/h1>\n\n\n\n<p>Viktiga kostnadsdrivare:<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">1. Krav p\u00e5 utrustning f\u00f6r extrema f\u00f6rh\u00e5llanden<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>H\u00f6g temperatur (system &gt;2000\u00b0C)<\/li>\n\n\n\n<li>Milj\u00f6er med h\u00f6gt vakuum<\/li>\n\n\n\n<li>Korrosionsbest\u00e4ndiga material<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">2. L\u00e5ga avkastningsniv\u00e5er<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>K\u00e4nslighet f\u00f6r defekter<\/li>\n\n\n\n<li>Risk f\u00f6r brott p\u00e5 wafern<\/li>\n\n\n\n<li>Processvariabilitet<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">3. L\u00e5ngsam genomstr\u00f6mning<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>H\u00e5rt material bromsar alla mekaniska steg<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">4. H\u00f6g FoU-intensitet<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Kontinuerlig processoptimering kr\u00e4vs<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">Slutsats<\/h1>\n\n\n\n<p>SiC-chip \u00e4r sv\u00e5ra att tillverka, inte p\u00e5 grund av en enda flaskhals, utan f\u00f6r att varje steg - fr\u00e5n kristalltillv\u00e4xt till slutlig skivtunning - pressar den nuvarande halvledarutrustningen till dess fysiska och tekniska gr\u00e4nser.<\/p>\n\n\n\n<p>Kombinationen av:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>bearbetning i extrema temperaturer<\/li>\n\n\n\n<li>ultrah\u00e5rt materialbeteende<\/li>\n\n\n\n<li>sn\u00e4v defekttolerans<\/li>\n\n\n\n<li>komplexa processer i flera steg<\/li>\n<\/ul>\n\n\n\n<p>g\u00f6r SiC till ett av de mest utmanande halvledarmaterialen i dagens massproduktion.<\/p>\n\n\n\n<p>Men i takt med att utrustningstekniken utvecklas - s\u00e4rskilt n\u00e4r det g\u00e4ller kontroll av kristalltillv\u00e4xt, laserassisterad bearbetning och avancerade etsningssystem - blir SiC gradvis mer skalbart, vilket g\u00f6r att det snabbt kan anv\u00e4ndas i elbilar, system f\u00f6r f\u00f6rnybar energi och h\u00f6gsp\u00e4nd kraftelektronik.<\/p>","protected":false},"excerpt":{"rendered":"<p>Silicon carbide (SiC) has become one of the most important materials in next-generation power electronics. It enables higher voltage, higher temperature, and higher efficiency devices compared with traditional silicon. However, behind these advantages lies a harsh reality: SiC chips are extremely difficult and expensive to manufacture at scale. Unlike conventional silicon processing, SiC manufacturing involves [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"footnotes":""},"categories":[24],"tags":[1319,1317,1321,1323,1318,368,867,1313,1320,1322],"class_list":["post-2449","post","type-post","status-publish","format-standard","hentry","category-industry-news","tag-diamond-wire-saw-cutting","tag-ilicon-carbide-manufacturing","tag-ion-implantation-sic","tag-power-electronics-semiconductors","tag-semiconductor-fabrication-equipment","tag-sic-crystal-growth","tag-sic-wafer-processing","tag-wafer-dicing-process","tag-wafer-polishing-process","tag-wafer-warpage"],"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/posts\/2449","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/comments?post=2449"}],"version-history":[{"count":1,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/posts\/2449\/revisions"}],"predecessor-version":[{"id":2450,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/posts\/2449\/revisions\/2450"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/media?parent=2449"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/categories?post=2449"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/tags?post=2449"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}