{"id":2138,"date":"2026-04-08T06:57:45","date_gmt":"2026-04-08T06:57:45","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?p=2138"},"modified":"2026-04-08T07:00:29","modified_gmt":"2026-04-08T07:00:29","slug":"wafer-back-grinding-and-polishing","status":"publish","type":"post","link":"https:\/\/www.zmsh-semitech.com\/sv\/wafer-back-grinding-and-polishing\/","title":{"rendered":"Slipning och polering av waferbaksidan: k\u00e4rnteknologier f\u00f6r avancerade halvledarf\u00f6rpackningar"},"content":{"rendered":"<h2 class=\"wp-block-heading\"><strong>1. Inledning: Varf\u00f6r wafertunning \u00e4r viktigt<\/strong><\/h2>\n\n\n\n<p>I modern halvledartillverkning b\u00f6rjar \u00f6verg\u00e5ngen fr\u00e5n front-end-bearbetning till back-end-f\u00f6rpackning med tv\u00e5 kritiska steg: <a href=\"https:\/\/www.zmsh-semitech.com\/sv\/produkt-kategori\/grinding-machine\/\"><mark style=\"background-color:rgba(0, 0, 0, 0);color:#0693e3\" class=\"has-inline-color\">bakslipning (wafer thinning) och <strong>polering<\/strong><\/mark><\/a>.<\/p>\n\n\n\n<p>Efter att wafers har genomg\u00e5tt front-end-tillverkning och elektrisk testning m\u00e5ste de genomg\u00e5 kontrollerad gallring f\u00f6r att uppfylla allt h\u00f6gre krav inom:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Avancerade f\u00f6rpackningar<\/li>\n\n\n\n<li>Termisk hantering<\/li>\n\n\n\n<li>Miniatyrisering av enheter<\/li>\n\n\n\n<li>H\u00f6gfrekvent prestanda<\/li>\n<\/ul>\n\n\n\n<p>Wafertjockleken \u00e4r inte l\u00e4ngre bara en strukturell parameter - den har en direkt inverkan p\u00e5 chipens prestanda, utbyte, tillf\u00f6rlitlighet och kostnadseffektivitet.<\/p>\n\n\n\n<figure class=\"wp-block-image aligncenter size-large\"><img fetchpriority=\"high\" decoding=\"async\" width=\"1024\" height=\"681\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/640-1024x681.jpg\" alt=\"\" class=\"wp-image-2139\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/640-1024x681.jpg 1024w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/640-300x199.jpg 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/640-768x511.jpg 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/640-18x12.jpg 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/640-600x399.jpg 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/640.jpg 1080w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/><\/figure>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>2. Huvudm\u00e5len f\u00f6r slipning och polering av waferbaksidan<\/strong><\/h2>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>2.1 F\u00f6rb\u00e4ttrad termisk prestanda<\/strong><\/h3>\n\n\n\n<p>Tunnare wafers f\u00f6rb\u00e4ttrar v\u00e4rmeavledningen genom att minska den termiska v\u00e4gen. Detta \u00e4r s\u00e4rskilt kritiskt i:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Str\u00f6mf\u00f6rs\u00f6rjningsenheter (Si, SiC)<\/li>\n\n\n\n<li>IC-kretsar med h\u00f6g densitet<\/li>\n\n\n\n<li>RF-till\u00e4mpningar<\/li>\n<\/ul>\n\n\n\n<p>Effektiv v\u00e4rmeavledning f\u00f6rhindrar \u00f6verhettning och f\u00f6rl\u00e4nger enhetens livsl\u00e4ngd.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>2.2 Kompatibilitet med avancerade f\u00f6rpackningar<\/strong><\/h3>\n\n\n\n<p>Modern f\u00f6rpackningsteknik - som t.ex:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>3D-stackning (Stackning)<\/li>\n\n\n\n<li>System i paket (SiP)<\/li>\n\n\n\n<li>Flip-chip<\/li>\n<\/ul>\n\n\n\n<p>-kr\u00e4ver ultratunna wafers (ofta under 100 \u03bcm).<\/p>\n\n\n\n<p>Gallring m\u00f6jligg\u00f6rs:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Mindre formfaktorer<\/li>\n\n\n\n<li>Minskad vikt p\u00e5 f\u00f6rpackningen<\/li>\n\n\n\n<li>H\u00f6gre integrationsdensitet<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>2.3 F\u00f6rb\u00e4ttrad mekanisk flexibilitet<\/strong><\/h3>\n\n\n\n<p>Tunnare wafers har st\u00f6rre flexibilitet, vilket m\u00f6jligg\u00f6r applikationer inom:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>B\u00e4rbar elektronik<\/li>\n\n\n\n<li>Flexibla enheter<\/li>\n\n\n\n<li>Avancerade sensorer<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>2.4 Optimering av elektrisk prestanda<\/strong><\/h3>\n\n\n\n<p>Wafertunning minskar den parasit\u00e4ra kapacitansen, vilket \u00e4r avg\u00f6rande f\u00f6r:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>H\u00f6gfrekventa kretsar<\/li>\n\n\n\n<li>RF- och mikrov\u00e5gsenheter<\/li>\n<\/ul>\n\n\n\n<p>Detta leder till f\u00f6rb\u00e4ttrad signalintegritet och enhetseffektivitet.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>2,5 F\u00f6rb\u00e4ttring av avkastningen<\/strong><\/h3>\n\n\n\n<p>Polering tar bort:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Ytliga defekter<\/li>\n\n\n\n<li>Restsp\u00e4nningsskikt<\/li>\n\n\n\n<li>Mikrosprickor fr\u00e5n slipning<\/li>\n<\/ul>\n\n\n\n<p>Detta f\u00f6rb\u00e4ttrar avsev\u00e4rt <strong>slutligt chiputbyte och tillf\u00f6rlitlighet<\/strong>.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>3. Standard processfl\u00f6de f\u00f6r gallring av skivor<\/strong><\/h2>\n\n\n\n<p>En typisk process f\u00f6r bakslipning och polering best\u00e5r av fyra viktiga steg:<\/p>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>Steg 1: Tempor\u00e4r bindning<\/strong><\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Wafern f\u00e4sts p\u00e5 en b\u00e4rare med hj\u00e4lp av:\n<ul class=\"wp-block-list\">\n<li>Sj\u00e4lvh\u00e4ftande tejp (laminering av tejp)<\/li>\n\n\n\n<li>Vaxbindning till glas-\/keramiksubstrat<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n\n\n\n<p>Detta skyddar framsidan vid gallring.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>Steg 2: Slipning bak\u00e5t (borttagning av material)<\/strong><\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Mekaniska eller kemiska metoder anv\u00e4nds f\u00f6r att avl\u00e4gsna bulkmaterial.<\/li>\n\n\n\n<li>Detta \u00e4r det f\u00f6rsta steget f\u00f6r att minska tjockleken.<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>Steg 3: Polering<\/strong><\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Avl\u00e4gsnar:\n<ul class=\"wp-block-list\">\n<li>Slipm\u00e4rken<\/li>\n\n\n\n<li>Skador under markytan<\/li>\n\n\n\n<li>Restsp\u00e4nning<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n\n\n\n<p>Ger en sl\u00e4t och felfri yta.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>Steg 4: Debonding<\/strong><\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Wafern separeras fr\u00e5n b\u00e4raren via:\n<ul class=\"wp-block-list\">\n<li>UV-exponering<\/li>\n\n\n\n<li>Kemisk uppl\u00f6sning<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>4. Fyra huvudsakliga tekniker f\u00f6r skivutglesning<\/strong><\/h2>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>4.1 Mekanisk slipning<\/strong><\/h3>\n\n\n\n<p><strong>Princip:<\/strong><br>Materialavverkning med diamantslipskivor.<\/p>\n\n\n\n<p><strong>F\u00f6rdelar:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>H\u00f6g effektivitet<\/li>\n\n\n\n<li>L\u00e4mplig f\u00f6r bulkhantering<\/li>\n<\/ul>\n\n\n\n<p><strong>Begr\u00e4nsningar:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Skada p\u00e5 ytskikt<\/li>\n\n\n\n<li>Mikrosprickor<\/li>\n\n\n\n<li>Kr\u00e4ver uppf\u00f6ljning av polering<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>4.2 L\u00e4ppning (mekanisk polering)<\/strong><\/h3>\n\n\n\n<p><strong>Princip:<\/strong><br>Slipande partiklar rullar och mikrosk\u00e4r ytan.<\/p>\n\n\n\n<p><strong>K\u00e4nnetecken:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Ger matta, enhetliga ytor<\/li>\n\n\n\n<li>Mindre aggressiv \u00e4n slipning<\/li>\n<\/ul>\n\n\n\n<p><strong>B\u00e4st f\u00f6r:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Kontrollerad gallring<\/li>\n\n\n\n<li>Mellanliggande efterbehandling<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>4.3 Kemisk mekanisk polering (CMP)<\/strong><\/h3>\n\n\n\n<p><strong>Princip:<\/strong><br>Kombinerar:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Kemisk reaktion (uppmjukning av ytan)<\/li>\n\n\n\n<li>Mekanisk borttagning<\/li>\n<\/ul>\n\n\n\n<p><strong>F\u00f6rdelar:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>\u0909\u0924\u094d\u0915\u0943\u0937\u094d\u091f ytans planhet<\/li>\n\n\n\n<li>Grovhet p\u00e5 nanometerniv\u00e5<\/li>\n\n\n\n<li>Global planarisering<\/li>\n<\/ul>\n\n\n\n<p><strong>Begr\u00e4nsningar:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>H\u00f6gre kostnad<\/li>\n\n\n\n<li>Komplex processtyrning<\/li>\n<\/ul>\n\n\n\n<figure class=\"wp-block-image aligncenter size-full\"><img decoding=\"async\" width=\"880\" height=\"556\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/6402.png\" alt=\"\" class=\"wp-image-2140\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/6402.png 880w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/6402-300x190.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/6402-768x485.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/6402-18x12.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/6402-600x379.png 600w\" sizes=\"(max-width: 880px) 100vw, 880px\" \/><\/figure>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>4.4 V\u00e5t och torr etsning<\/strong><\/h3>\n\n\n\n<h4 class=\"wp-block-heading\"><strong>V\u00e5t etsning<\/strong><\/h4>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Anv\u00e4nder kemiska l\u00f6sningar<\/li>\n\n\n\n<li>L\u00e5g kostnad, enkel installation<\/li>\n\n\n\n<li>D\u00e5lig kontroll av enhetlighet<\/li>\n<\/ul>\n\n\n\n<h4 class=\"wp-block-heading\"><strong>Torr etsning<\/strong><\/h4>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Anv\u00e4nder plasmabaserade reaktioner<\/li>\n\n\n\n<li>H\u00f6g precision (i teorin)<\/li>\n\n\n\n<li>Dyrt och komplext<\/li>\n<\/ul>\n\n\n\n<p><strong>Slutsats:<\/strong><br>Etsning anv\u00e4nds s\u00e4llan som en prim\u00e4r gallringsmetod f\u00f6r h\u00f6gprecisionswafers.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>5. Sammanfattning av processj\u00e4mf\u00f6relsen<\/strong><\/h2>\n\n\n\n<figure class=\"wp-block-table\"><table class=\"has-fixed-layout\"><thead><tr><th>Metod<\/th><th>Effektivitet<\/th><th>Ytans kvalitet<\/th><th>Kostnad<\/th><th>Typisk anv\u00e4ndning<\/th><\/tr><\/thead><tbody><tr><td>Slipning<\/td><td>H\u00f6g<\/td><td>L\u00e5g<\/td><td>Medium<\/td><td>Borttagning av bulk<\/td><\/tr><tr><td>L\u00e4ppning<\/td><td>Medium<\/td><td>Medium<\/td><td>Medium<\/td><td>Mellanliggande<\/td><\/tr><tr><td>CMP<\/td><td>L\u00e5g<\/td><td>Mycket h\u00f6g<\/td><td>H\u00f6g<\/td><td>Slutlig polering<\/td><\/tr><tr><td>Etsning<\/td><td>L\u00e5g<\/td><td>L\u00e5g<\/td><td>Variabel<\/td><td>S\u00e4rskilda fall<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>6. Viktiga utmaningar inom Wafer Thinning<\/strong><\/h2>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>6.1 Likformighet i tjocklek (TTV-kontroll)<\/strong><\/h3>\n\n\n\n<p>Bibeh\u00e5lla l\u00e5g <strong>Total tjockleksvariation (TTV)<\/strong> \u00e4r avg\u00f6rande f\u00f6r enhetens enhetlighet.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>6.2 Kontroll av ytdefekter<\/strong><\/h3>\n\n\n\n<p>Vanliga fr\u00e5gor inkluderar:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Repor<\/li>\n\n\n\n<li>Mikrosprickor<\/li>\n\n\n\n<li>F\u00f6rorening av partiklar<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>6.3 Stresshantering<\/strong><\/h3>\n\n\n\n<p>Mekaniska och termiska p\u00e5frestningar kan orsaka detta:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Krigssida<\/li>\n\n\n\n<li>Sprickbildning<\/li>\n\n\n\n<li>Fel p\u00e5 enheten<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>7. Hur man f\u00f6rb\u00e4ttrar kvaliteten p\u00e5 skivtunnning<\/strong><\/h2>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>7.1 Optimera f\u00f6rbrukningsvaror<\/strong><\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Anpassa slipmedlets storlek till materialets h\u00e5rdhet<\/li>\n\n\n\n<li>Anv\u00e4nd flerstegs sandupptagning<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>7.2 Finjustera utrustningens parametrar<\/strong><\/h3>\n\n\n\n<p>Viktiga parametrar:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Ned\u00e5triktat tryck<\/li>\n\n\n\n<li>Rotationshastighet<\/li>\n\n\n\n<li>Matningshastighet<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>7.3 Presentera poleringsstegen<\/strong><\/h3>\n\n\n\n<p>Polering efter slipning:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Avl\u00e4gsnar skadat lager<\/li>\n\n\n\n<li>Minskar stress<\/li>\n\n\n\n<li>F\u00f6rb\u00e4ttrar ytj\u00e4mnheten<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>8. Utrustningens kapacitet och processresultat<\/strong><\/h2>\n\n\n\n<p>Typisk prestanda p\u00e5 branschniv\u00e5:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Waferstorlek: upp till <strong>6 tum (kompatibel med mindre prover)<\/strong><\/li>\n\n\n\n<li>Minsta urvalsstorlek: <strong>1 cm \u00d7 1 cm<\/strong><\/li>\n\n\n\n<li>Material som st\u00f6ds:\n<ul class=\"wp-block-list\">\n<li>Kisel (Si)<\/li>\n\n\n\n<li>Galliumarsenid (GaAs)<\/li>\n\n\n\n<li>Indiumfosfid (InP)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>Processnoggrannhet<\/strong><\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>4-tums wafer TTV: \u00b13 \u03bcm<\/li>\n\n\n\n<li>6-tums wafer TTV: \u00b15 \u03bcm<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>Ytans kvalitet<\/strong><\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Ytj\u00e4mnhet: <strong>Ra \u2264 0,5 nm (@1 \u03bcm\u00b2)<\/strong><\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>Slutlig tjocklek<\/strong><\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Standardskivor: ~100 \u03bcm<\/li>\n\n\n\n<li>Bondade wafers: ~50 \u03bcm<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>9. Inblick i branschen: Balansen mellan tjocklek och prestanda<\/strong><\/h2>\n\n\n\n<p>N\u00e4r halvledarkomponenter utvecklas mot:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>H\u00f6gre integration<\/li>\n\n\n\n<li>3D-stapling<\/li>\n\n\n\n<li>Avancerade f\u00f6rpackningar<\/li>\n<\/ul>\n\n\n\n<p>Wafer-tunning blir ett strategiskt processteg, inte bara en mekanisk operation.<\/p>\n\n\n\n<p>Det finns dock en viktig avv\u00e4gning att g\u00f6ra:<\/p>\n\n\n\n<blockquote class=\"wp-block-quote is-layout-flow wp-block-quote-is-layout-flow\">\n<p>Tunnare wafers m\u00f6jligg\u00f6r h\u00f6gre integration, men alltf\u00f6r tunna wafers kan f\u00f6rs\u00e4mra den mekaniska stabiliteten och enhetens prestanda.<\/p>\n<\/blockquote>\n\n\n\n<p>D\u00e4rf\u00f6r \u00e4r det viktigt att v\u00e4lja r\u00e4tt gallringsmetod och processf\u00f6nster:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Kostnadskontroll<\/li>\n\n\n\n<li>Optimering av avkastningen<\/li>\n\n\n\n<li>L\u00e5ngsiktig tillf\u00f6rlitlighet<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>10. Slutsats<\/strong><\/h2>\n\n\n\n<p>Slipning och polering av waferbaksidan \u00e4r grundl\u00e4ggande teknologier som \u00f6verbryggar front-end-tillverkning och avancerad paketering.<\/p>\n\n\n\n<p>En v\u00e4l optimerad gallringsprocess kan:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>F\u00f6rb\u00e4ttra termisk och elektrisk prestanda<\/li>\n\n\n\n<li>M\u00f6jligg\u00f6r avancerade f\u00f6rpackningsarkitekturer<\/li>\n\n\n\n<li>\u00d6ka avkastningen och minska kostnaderna<\/li>\n<\/ul>\n\n\n\n<p>I takt med att halvledartekniken utvecklas, <strong>precision, stabilitet och processintegration<\/strong> inom waferutglesning kommer att forts\u00e4tta att definiera konkurrensf\u00f6rdelar.<\/p>","protected":false},"excerpt":{"rendered":"<p>1. Introduction: Why Wafer Thinning Matters In modern semiconductor manufacturing, the transition from front-end processing to back-end packaging begins with two critical steps: back grinding (wafer thinning) and polishing. After wafers complete front-end fabrication and electrical testing, they must undergo controlled thinning to meet increasingly demanding requirements in: Wafer thickness is no longer just a [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":2139,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"footnotes":""},"categories":[25],"tags":[44,870,404,869,334,864,875,36,868,867,876,866,872,877,871,196,874,865,873],"class_list":["post-2138","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-technology-applications","tag-advanced-packaging","tag-back-grinding","tag-chemical-mechanical-polishing-2","tag-chip-stacking","tag-cmp","tag-gaas-wafer-thinning","tag-inp-wafer-polishing","tag-semiconductor-manufacturing","tag-semiconductor-process-flow","tag-sic-wafer-processing","tag-thin-wafer-technology","tag-wafer-bonding-and-debonding","tag-wafer-etching","tag-wafer-grinding-process","tag-wafer-lapping","tag-wafer-polishing","tag-wafer-surface-roughness","tag-wafer-thinning","tag-wafer-ttv"],"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/posts\/2138","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/comments?post=2138"}],"version-history":[{"count":2,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/posts\/2138\/revisions"}],"predecessor-version":[{"id":2142,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/posts\/2138\/revisions\/2142"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/media\/2139"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/media?parent=2138"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/categories?post=2138"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/sv\/wp-json\/wp\/v2\/tags?post=2138"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}