{"id":2316,"date":"2026-04-21T06:05:44","date_gmt":"2026-04-21T06:05:44","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2316"},"modified":"2026-04-21T06:05:45","modified_gmt":"2026-04-21T06:05:45","slug":"ion-beam-etching-machine-for-si-sio2-and-metal-materials-in-semiconductor-fabrication","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/nl\/product\/ion-beam-etching-machine-for-si-sio2-and-metal-materials-in-semiconductor-fabrication\/","title":{"rendered":"Ionenstraal Etsmachine voor Si SiO2 en Metaalmaterialen in Halfgeleiderfabricage"},"content":{"rendered":"<p data-start=\"297\" data-end=\"643\"><img fetchpriority=\"high\" decoding=\"async\" class=\"size-medium wp-image-2320 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-300x300.webp\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-300x300.webp 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-150x150.webp 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-12x12.webp 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-600x600.webp 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-100x100.webp 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication.webp 750w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>De ionenbundel etsmachine voor Si, SiO2 en metaalmaterialen is een droog etssysteem met hoge precisie, ontworpen voor geavanceerde microfabricage en nanotechnologische toepassingen. Door gebruik te maken van ion beam etching (IBE), ook bekend als ion frezen, maakt deze apparatuur een hoge materiaalverwijdering mogelijk door middel van een puur fysisch sputterproces.<\/p>\n<p data-start=\"645\" data-end=\"961\">In tegenstelling tot conventionele etstechnologie\u00ebn op basis van plasma, wordt het substraat bij etsen met ionenstralen niet direct blootgesteld aan plasma. Dit vermindert de risico's van door plasma veroorzaakte schade, verontreiniging en ladingsaccumulatie aanzienlijk, waardoor het bijzonder geschikt is voor de productie van gevoelige halfgeleiders en optische apparaten.<\/p>\n<p data-start=\"963\" data-end=\"1148\">Met nanometerprecisie en uitstekende procescontrole wordt dit systeem veel gebruikt bij halfgeleiderfabricage, verwerking van dunne lagen en onderzoek naar geavanceerde materialen.<\/p>\n<hr data-start=\"1150\" data-end=\"1153\" \/>\n<h2 data-section-id=\"17sw59i\" data-start=\"1155\" data-end=\"1184\"><span role=\"text\"><img decoding=\"async\" class=\"wp-image-2324 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-300x125.png\" alt=\"\" width=\"458\" height=\"191\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-300x125.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-18x7.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-600x250.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7.png 680w\" sizes=\"(max-width: 458px) 100vw, 458px\" \/>Belangrijkste technische functies<\/span><\/h2>\n<ul data-start=\"1186\" data-end=\"1929\">\n<li data-section-id=\"7yo1gz\" data-start=\"1186\" data-end=\"1324\">Ultrahoge precisie<br data-start=\"1212\" data-end=\"1215\" \/>Bereikt een etsresolutie van \u226410 nm, waarmee wordt voldaan aan geavanceerde vereisten voor halfgeleiders en nanofabricage.<\/li>\n<li data-section-id=\"csgjgf\" data-start=\"1326\" data-end=\"1497\">Niet-selectief etsvermogen<br data-start=\"1364\" data-end=\"1367\" \/>Maakt gelijkmatig etsen in meerdere materialen mogelijk, waaronder metalen, halfgeleiders en di\u00eblektrische materialen zonder chemische afhankelijkheid.<\/li>\n<li data-section-id=\"1xlwjqh\" data-start=\"1499\" data-end=\"1667\">Anisotrope en directionele besturing<br data-start=\"1540\" data-end=\"1543\" \/>Instelbare ionenbundelhoeken maken zowel anisotrope als isotrope etsprofielen mogelijk, wat complexe patroonoverdracht ondersteunt.<\/li>\n<li data-section-id=\"1ialgp0\" data-start=\"1669\" data-end=\"1793\">Plasmavrije verwerkingsomgeving<br data-start=\"1709\" data-end=\"1712\" \/>Elimineert door plasma veroorzaakte schade, wat zorgt voor een hogere betrouwbaarheid en opbrengst van het apparaat.<\/li>\n<li data-section-id=\"1squn5z\" data-start=\"1795\" data-end=\"1929\">Uitstekende oppervlaktekwaliteit<br data-start=\"1826\" data-end=\"1829\" \/>Produceert gladde oppervlakken met verminderde ruwheid, essentieel voor optische en elektronische toepassingen.<\/li>\n<\/ul>\n<hr data-start=\"1931\" data-end=\"1934\" \/>\n<h2 data-section-id=\"crb813\" data-start=\"1936\" data-end=\"1965\"><span role=\"text\">Belangrijkste systeemonderdelen<\/span><\/h2>\n<p data-start=\"1967\" data-end=\"2042\">Een compleet etssysteem met ionenstralen bestaat uit verschillende kritieke subsystemen:<\/p>\n<h3 data-section-id=\"j86wbp\" data-start=\"2044\" data-end=\"2068\"><span role=\"text\">1. Vacu\u00fcmsysteem<\/span><\/h3>\n<p data-start=\"2069\" data-end=\"2118\">Biedt een hoogvacu\u00fcmomgeving die essentieel is voor:<\/p>\n<ul data-start=\"2119\" data-end=\"2193\">\n<li data-section-id=\"1vzt3vq\" data-start=\"2119\" data-end=\"2137\">Stabiliteit van de balk<\/li>\n<li data-section-id=\"svkbf3\" data-start=\"2138\" data-end=\"2163\">Controle op vervuiling<\/li>\n<li data-section-id=\"19d0yza\" data-start=\"2164\" data-end=\"2193\">Zeer nauwkeurige verwerking<\/li>\n<\/ul>\n<h3 data-section-id=\"8jigvj\" data-start=\"2195\" data-end=\"2216\"><span role=\"text\">2. Ionenbron<\/span><\/h3>\n<p data-start=\"2217\" data-end=\"2272\">Genereert een hoogenergetische ionenbundel (meestal argonionen):<\/p>\n<ul data-start=\"2273\" data-end=\"2386\">\n<li data-section-id=\"116c4dh\" data-start=\"2273\" data-end=\"2315\">Bepaalt etssnelheid en uniformiteit<\/li>\n<li data-section-id=\"bdpzju\" data-start=\"2316\" data-end=\"2386\">Ondersteunt verschillende brontypes zoals RF en Kaufman ionenbronnen<\/li>\n<\/ul>\n<h3 data-section-id=\"1tpsqxl\" data-start=\"2388\" data-end=\"2411\"><span role=\"text\">3. Monsterfase<\/span><\/h3>\n<ul data-start=\"2412\" data-end=\"2530\">\n<li data-section-id=\"d3z3he\" data-start=\"2412\" data-end=\"2468\">Ondersteunt meerassige rotatie voor gelijkmatig etsen<\/li>\n<li data-section-id=\"15yipgz\" data-start=\"2469\" data-end=\"2530\">Ge\u00efntegreerde temperatuurregeling verbetert de processtabiliteit<\/li>\n<\/ul>\n<h3 data-section-id=\"qoosxq\" data-start=\"2532\" data-end=\"2557\"><span role=\"text\">4. Besturingssysteem<\/span><\/h3>\n<ul data-start=\"2558\" data-end=\"2705\">\n<li data-section-id=\"1mqnqw1\" data-start=\"2558\" data-end=\"2587\">Volledig geautomatiseerde werking<\/li>\n<li data-section-id=\"ymbyxd\" data-start=\"2588\" data-end=\"2643\">Maakt nauwkeurige parameterregeling en herhaalbaarheid mogelijk<\/li>\n<li data-section-id=\"1kjf28e\" data-start=\"2644\" data-end=\"2705\">Optionele eindpuntdetectie voor geavanceerde procesregeling<\/li>\n<\/ul>\n<h3 data-section-id=\"97rafg\" data-start=\"2707\" data-end=\"2729\"><span role=\"text\">5. Neutralisator<\/span><\/h3>\n<ul data-start=\"2730\" data-end=\"2836\">\n<li data-section-id=\"12j0ebp\" data-start=\"2730\" data-end=\"2772\">Voorkomt opbouw van lading tijdens het etsen<\/li>\n<li data-section-id=\"1o4nvb1\" data-start=\"2773\" data-end=\"2836\">Essentieel voor isolerende materialen zoals SiO\u2082 en Si\u2083N\u2084<\/li>\n<\/ul>\n<hr data-start=\"2838\" data-end=\"2841\" \/>\n<h2 data-section-id=\"sgqumq\" data-start=\"2843\" data-end=\"2867\"><span role=\"text\">Werkingsprincipe<\/span><\/h2>\n<p data-start=\"2869\" data-end=\"3006\"><img decoding=\"async\" class=\"size-medium wp-image-2321 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-300x235.png\" alt=\"\" width=\"300\" height=\"235\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-300x235.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-15x12.png 15w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-600x469.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1.png 680w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Het etsen met ionenstralen gebeurt door een hoogenergetische, gecollimeerde ionenbundel onder vacu\u00fcmomstandigheden op het oppervlak van het doelmateriaal te richten.<\/p>\n<p data-start=\"3008\" data-end=\"3253\">De ionen (meestal Ar\u207a) botsen met oppervlakte-atomen, waardoor momentum wordt overgedragen en atomen worden uitgeworpen via fysisch sputteren. Dit proces verwijdert materiaal laag voor laag, waardoor nauwkeurige patroondefinitie mogelijk is zonder chemische reacties.<\/p>\n<p data-start=\"3255\" data-end=\"3296\">Dit maakt IBE bijzonder geschikt voor:<\/p>\n<ul data-start=\"3297\" data-end=\"3403\">\n<li data-section-id=\"jy9ydi\" data-start=\"3297\" data-end=\"3333\">Patroonoverdracht met hoge resolutie<\/li>\n<li data-section-id=\"1ihgsm0\" data-start=\"3334\" data-end=\"3376\">Materialen met een lage chemische reactiviteit<\/li>\n<li data-section-id=\"hl3mzt\" data-start=\"3377\" data-end=\"3403\">Meerlagige structuren<\/li>\n<\/ul>\n<hr data-start=\"3405\" data-end=\"3408\" \/>\n<h2 data-section-id=\"gimyd4\" data-start=\"3410\" data-end=\"3440\"><span role=\"text\">Verwerkingsmogelijkheden<\/span><\/h2>\n<h3 data-section-id=\"ww5vbk\" data-start=\"3442\" data-end=\"3469\"><span role=\"text\">Ondersteunde materialen<\/span><\/h3>\n<ul data-start=\"3470\" data-end=\"3622\">\n<li data-section-id=\"4dwycu\" data-start=\"3470\" data-end=\"3504\">Metalen: Au, Pt, Cu, Ta, Al<\/li>\n<li data-section-id=\"12wc4i0\" data-start=\"3505\" data-end=\"3537\">Halfgeleiders: Si, GaAs<\/li>\n<li data-section-id=\"75kyg7\" data-start=\"3538\" data-end=\"3570\">Di\u00eblektrica: SiO\u2082, Si\u2083N\u2084<\/li>\n<li data-section-id=\"1xmdv1x\" data-start=\"3571\" data-end=\"3622\">Geavanceerde materialen: AlN, keramiek, polymeren<\/li>\n<\/ul>\n<hr data-start=\"3624\" data-end=\"3627\" \/>\n<h2 data-section-id=\"12vl3dy\" data-start=\"3629\" data-end=\"3656\"><span role=\"text\">Typische processtroom<\/span><\/h2>\n<ol data-start=\"3658\" data-end=\"4078\">\n<li data-section-id=\"1lq2akh\" data-start=\"3658\" data-end=\"3742\">Monstervoorbereiding<br data-start=\"3683\" data-end=\"3686\" \/>Reinig en monteer het substraat in de vacu\u00fcmkamer<\/li>\n<li data-section-id=\"1uf7qj1\" data-start=\"3744\" data-end=\"3821\">Maskeren<br data-start=\"3758\" data-end=\"3761\" \/>Breng fotoresist of een metaalmasker aan om de etsgebieden te defini\u00ebren<\/li>\n<li data-section-id=\"1sq3ygn\" data-start=\"3823\" data-end=\"3910\">Ionenstraalgeneratie<br data-start=\"3849\" data-end=\"3852\" \/>Activeer ionenbron met inert gas (meestal argon)<\/li>\n<li data-section-id=\"46esbg\" data-start=\"3912\" data-end=\"4006\">Etsproces<br data-start=\"3934\" data-end=\"3937\" \/>Pas de stralingsenergie, hoek en tijd aan om de gewenste structuur te bereiken<\/li>\n<li data-section-id=\"oeifr6\" data-start=\"4008\" data-end=\"4078\">Masker verwijderen<br data-start=\"4027\" data-end=\"4030\" \/>Verwijder het masker om de uiteindelijke ge\u00ebtste patronen te onthullen<\/li>\n<\/ol>\n<hr data-start=\"4080\" data-end=\"4083\" \/>\n<h2 data-section-id=\"1myoacb\" data-start=\"4085\" data-end=\"4109\"><span role=\"text\">Toepassingsgebieden<\/span><\/h2>\n<h3 data-section-id=\"bm5nu5\" data-start=\"4111\" data-end=\"4146\"><span role=\"text\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-2322 aligncenter\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-300x65.png\" alt=\"\" width=\"724\" height=\"157\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-300x65.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-18x4.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-600x130.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6.png 680w\" sizes=\"(max-width: 724px) 100vw, 724px\" \/>Productie van halfgeleiders<\/span><\/h3>\n<ul data-start=\"4147\" data-end=\"4236\">\n<li data-section-id=\"13vctk4\" data-start=\"4147\" data-end=\"4180\">Patronen voor ge\u00efntegreerde schakelingen<\/li>\n<li data-section-id=\"ofwy8d\" data-start=\"4181\" data-end=\"4206\">Dunne film structureren<\/li>\n<li data-section-id=\"1x3kzva\" data-start=\"4207\" data-end=\"4236\">Geavanceerde fabricage van knooppunten<\/li>\n<\/ul>\n<h3 data-section-id=\"1tse075\" data-start=\"4238\" data-end=\"4261\"><span role=\"text\">Optische apparaten<\/span><\/h3>\n<ul data-start=\"4262\" data-end=\"4356\">\n<li data-section-id=\"v6a7ly\" data-start=\"4262\" data-end=\"4309\">Precisieverwerking van roosters en lenzen<\/li>\n<li data-section-id=\"lq2w9m\" data-start=\"4310\" data-end=\"4356\">Oppervlaktemodificatie van optische onderdelen<\/li>\n<\/ul>\n<h3 data-section-id=\"1wc0my6\" data-start=\"4358\" data-end=\"4380\"><span role=\"text\">Nanotechnologie<\/span><\/h3>\n<ul data-start=\"4381\" data-end=\"4441\">\n<li data-section-id=\"178ey7v\" data-start=\"4381\" data-end=\"4441\">Fabricage van nanodraden, nanopori\u00ebn en MEMS-structuren<\/li>\n<\/ul>\n<h3 data-section-id=\"krs816\" data-start=\"4443\" data-end=\"4468\"><span role=\"text\">Materiaalwetenschap<\/span><\/h3>\n<ul data-start=\"4469\" data-end=\"4541\">\n<li data-section-id=\"18ntl16\" data-start=\"4469\" data-end=\"4506\">Oppervlakteanalyse en -modificatie<\/li>\n<li data-section-id=\"1b8wqpz\" data-start=\"4507\" data-end=\"4541\">Functioneel coatingpreparaat<\/li>\n<\/ul>\n<hr data-start=\"4543\" data-end=\"4546\" \/>\n<h2 data-section-id=\"13lz0w7\" data-start=\"4548\" data-end=\"4591\"><span role=\"text\">Voordelen ten opzichte van conventioneel etsen<\/span><\/h2>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"4593\" data-end=\"4927\">\n<thead data-start=\"4593\" data-end=\"4646\">\n<tr data-start=\"4593\" data-end=\"4646\">\n<th class=\"\" data-start=\"4593\" data-end=\"4603\" data-col-size=\"sm\">Functie<\/th>\n<th class=\"\" data-start=\"4603\" data-end=\"4622\" data-col-size=\"sm\">Ionenstraal etsen<\/th>\n<th class=\"\" data-start=\"4622\" data-end=\"4646\" data-col-size=\"sm\">Reactief Ionenetsen<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"4697\" data-end=\"4927\">\n<tr data-start=\"4697\" data-end=\"4746\">\n<td data-start=\"4697\" data-end=\"4712\" data-col-size=\"sm\">Procestype<\/td>\n<td data-start=\"4712\" data-end=\"4723\" data-col-size=\"sm\">Fysiek<\/td>\n<td data-start=\"4723\" data-end=\"4746\" data-col-size=\"sm\">Fysiek + chemisch<\/td>\n<\/tr>\n<tr data-start=\"4747\" data-end=\"4805\">\n<td data-start=\"4747\" data-end=\"4765\" data-col-size=\"sm\">Plasmablootstelling<\/td>\n<td data-start=\"4765\" data-end=\"4786\" data-col-size=\"sm\">Geen directe blootstelling<\/td>\n<td data-start=\"4786\" data-end=\"4805\" data-col-size=\"sm\">Directe blootstelling<\/td>\n<\/tr>\n<tr data-start=\"4806\" data-end=\"4853\">\n<td data-start=\"4806\" data-end=\"4829\" data-col-size=\"sm\">Materiaalselectiviteit<\/td>\n<td data-start=\"4829\" data-end=\"4845\" data-col-size=\"sm\">Laag (uniform)<\/td>\n<td data-start=\"4845\" data-end=\"4853\" data-col-size=\"sm\">Hoog<\/td>\n<\/tr>\n<tr data-start=\"4854\" data-end=\"4893\">\n<td data-start=\"4854\" data-end=\"4871\" data-col-size=\"sm\">Oppervlakteschade<\/td>\n<td data-start=\"4871\" data-end=\"4881\" data-col-size=\"sm\">Minimaal<\/td>\n<td data-start=\"4881\" data-end=\"4893\" data-col-size=\"sm\">Mogelijk<\/td>\n<\/tr>\n<tr data-start=\"4894\" data-end=\"4927\">\n<td data-start=\"4894\" data-end=\"4906\" data-col-size=\"sm\">Precisie<\/td>\n<td data-start=\"4906\" data-end=\"4919\" data-col-size=\"sm\">Ultrahoog<\/td>\n<td data-start=\"4919\" data-end=\"4927\" data-col-size=\"sm\">Hoog<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<hr data-start=\"4929\" data-end=\"4932\" \/>\n<h2 data-section-id=\"elc90z\" data-start=\"4934\" data-end=\"4944\"><span role=\"text\">FAQ<\/span><\/h2>\n<h3 data-section-id=\"1h3z74f\" data-start=\"4946\" data-end=\"4978\"><span role=\"text\">Wat is etsen met ionenstralen?<\/span><\/h3>\n<p data-start=\"4979\" data-end=\"5122\">Ionenstraal etsen is een droog etsproces waarbij materiaal wordt verwijderd door middel van fysieke sputtering met behulp van hoogenergetische ionen in een vacu\u00fcmomgeving.<\/p>\n<h3 data-section-id=\"1oyreis\" data-start=\"5124\" data-end=\"5153\"><span role=\"text\">IBE vs RIE verschil\uff1f<\/span><\/h3>\n<ul data-start=\"5154\" data-end=\"5316\">\n<li data-section-id=\"6o7nxe\" data-start=\"5154\" data-end=\"5219\">IBE: puur fysisch, geen plasmacontact, hogere precisie<\/li>\n<li data-section-id=\"d79ynl\" data-start=\"5220\" data-end=\"5316\">RIE: combineert chemische reacties met plasma, hogere selectiviteit maar meer risico op schade<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>De ionenbundel etsmachine voor Si, SiO2 en metaalmaterialen is een droog etssysteem met hoge precisie, ontworpen voor geavanceerde microfabricage en nanotechnologische toepassingen. Door gebruik te maken van ion beam etching (IBE), ook bekend als ion frezen, maakt deze apparatuur een hoge materiaalverwijdering mogelijk door middel van een puur fysisch 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