The ZMSH SiC Single Crystal Growth Furnace is a high-temperature crystal growth system engineered for 6-inch and 8-inch silicon carbide single crystal production.![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/01\/SiC-Single-Crystal-Growth-Furnace-for-6-Inch-and-8-Inch-Crystals-Using-PVT-Lely-and-TSSG-Methods-2-300x300.png\")
The furnace supports multiple mature growth technologies, including Physical Vapor Transport (PVT), Lely, and Temperature Gradient (TSSG) methods, enabling flexible process selection according to crystal size, polytype, and production targets.<\/p>\n
The system adopts graphite resistance heating and operates under a controlled vacuum and inert gas atmosphere. By precisely regulating temperature gradients, chamber pressure, and gas flow, the furnace provides a stable environment for consistent SiC sublimation, transport, and recrystallization, ensuring reliable ingot quality for semiconductor-grade applications.<\/p>\n
Designed for industrial-scale operation, the furnace emphasizes process stability, repeatability, and long-term reliability in SiC crystal manufacturing.<\/p>\n
The furnace is capable of growing multiple SiC crystal polytypes, including:<\/p>\n
Conductive 4H-SiC<\/p>\n<\/li>\n
Semi-insulating 4H-SiC<\/p>\n<\/li>\n
Other polytypes such as 6H, 2H, and 3C<\/p>\n<\/li>\n<\/ul>\n
Among these, 4H-SiC, which is widely used in power semiconductor devices, has been repeatedly and successfully grown using ZMSH furnaces in customer production environments.
Independent control of axial and radial temperature gradients helps reduce thermal stress, suppress defect formation, and improve effective crystal thickness.<\/p>\n
![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/01\/SiC-Single-Crystal-Growth-Furnace-for-6-Inch-and-8-Inch-Crystals-Using-PVT-Lely-and-TSSG-Methods-3-300x300.webp\")
Optimized Thermal Field Control<\/h3>\nThe furnace features a well-balanced thermal field design with precise control of axial and radial temperature gradients. This enables a smooth temperature profile and a stable crystal growth interface, improving crystal uniformity and material utilization efficiency.<\/p>\n
Advanced control systems ensure stable operation throughout the growth cycle, providing accurate regulation of heating power, temperature, gas flow, and chamber pressure. These capabilities are essential for producing high-purity SiC crystals with low defect density.<\/p>\n
The system integrates automated monitoring, real-time data recording, safety alarms, and remote access functions. Automation reduces operator dependence, improves process consistency, and supports long-term continuous production.<\/p>\n
SiC substrates for power semiconductor devices<\/p>\n<\/li>\n
High-voltage MOSFETs and diodes<\/p>\n<\/li>\n
Electric vehicle power electronics<\/p>\n<\/li>\n
Stroomomzettingssystemen voor hernieuwbare energie<\/p>\n<\/li>\n
Industrial power modules<\/p>\n<\/li>\n<\/ul>\n
| Item<\/th>\n | Specificatie<\/th>\n<\/tr>\n<\/thead>\n | ||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verwarmingsmethode<\/td>\n | Graphite resistance heating<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| Input Power<\/td>\n | Three-phase, five-wire AC 380V \u00b110%, 50\u201360 Hz<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| Maximum Heating Temperature<\/td>\n | 2300\u00b0C<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| Rated Heating Power<\/td>\n | 80 kW<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| Heater Power Range<\/td>\n | 35\u201340 kW<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| Energy Consumption per Cycle<\/td>\n | 3500\u20134500 kWh<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| Crystal Growth Cycle<\/td>\n | 5\u20137 days<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| Cold Furnace Ultimate Vacuum<\/td>\n | 5 \u00d7 10-\u2074 Pa<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| Furnace Atmosphere<\/td>\n | Argon (5N), Nitrogen (5N)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| Cooling Water Flow Rate<\/td>\n | 6 m\u00b3\/h<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| Main Machine Dimensions (L \u00d7 W \u00d7 H)<\/td>\n | 2150 \u00d7 1600 \u00d7 2850 mm<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| Main Machine Weight<\/td>\n | Approx. 2000 kg<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n \n 6-Inch SiC Crystal Growth Capability<\/h3>\n\n
|
![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/01\/SiC-Single-Crystal-Growth-Furnace-for-6-Inch-and-8-Inch-Crystals-Using-PVT-Lely-and-TSSG-Methods-4-300x300.webp\")
Q1: Which SiC crystal growth methods can be implemented with this furnace?