{"id":2419,"date":"2026-04-27T02:15:07","date_gmt":"2026-04-27T02:15:07","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2419"},"modified":"2026-06-11T09:57:44","modified_gmt":"2026-06-11T09:57:44","slug":"6-inch-n-type-6h-sic-epitaxy-wafer-for-mems-uv-sensors-graphene-growth","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/hu\/product\/6-inch-n-type-6h-sic-epitaxy-wafer-for-mems-uv-sensors-graphene-growth\/","title":{"rendered":"6 h\u00fcvelykes N-t\u00edpus\u00fa 6H SiC epitaxi\u00e1s ostya MEMS, UV \u00e9rz\u00e9kel\u0151k \u00e9s graf\u00e9n n\u00f6veked\u00e9s\u00e9hez"},"content":{"rendered":"

\"6A 6 h\u00fcvelykes N-t\u00edpus\u00fa 6H SiC epitaxi\u00e1s ostya egy nagy teljes\u00edtm\u00e9ny\u0171 f\u00e9lvezet\u0151 szubsztr\u00e1t, amelyet fejlett alkalmaz\u00e1sokhoz terveztek, bele\u00e9rtve a MEMS eszk\u00f6z\u00f6ket, az ultraibolya (UV) \u00e9rz\u00e9kel\u0151ket \u00e9s az epitaxi\u00e1lis graf\u00e9nn\u00f6veszt\u00e9st. A kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 szil\u00edcium-karbid (SiC) egykrist\u00e1lyokb\u00f3l gy\u00e1rtott ostya kiv\u00e1l\u00f3 elektromos, termikus \u00e9s mechanikai tulajdons\u00e1gokat egyes\u00edt, \u00edgy ide\u00e1lis v\u00e1laszt\u00e1s olyan ig\u00e9nyes k\u00f6rnyezetekben, ahol a hagyom\u00e1nyos szil\u00edcium anyagok nem k\u00e9pesek megb\u00edzhat\u00f3an teljes\u00edteni.<\/p>\n

A 150 mm-es (6 h\u00fcvelykes) szabv\u00e1nyos \u00e1tm\u00e9r\u0151vel \u00e9s pontosan szab\u00e1lyozott 350 \u00b5m-es vastags\u00e1ggal ez az ostya kiv\u00e1l\u00f3 mechanikai stabilit\u00e1st \u00e9s a modern f\u00e9lvezet\u0151gy\u00e1rt\u00f3 berendez\u00e9sekkel val\u00f3 folyamat-kompatibilit\u00e1st biztos\u00edt. A 6H polyt\u00edpus sz\u00e9les, k\u00f6r\u00fclbel\u00fcl 2,96 eV-os s\u00e1vh\u00e9zaggal rendelkezik, ami lehet\u0151v\u00e9 teszi a hat\u00e9kony m\u0171k\u00f6d\u00e9st magas h\u0151m\u00e9rs\u00e9kleten, nagy sug\u00e1rz\u00e1ssal \u00e9s k\u00e9miailag agressz\u00edv k\u00f6r\u00fclm\u00e9nyek k\u00f6z\u00f6tt.<\/p>\n

Minden egyes osty\u00e1t fejlett k\u00e9miai mechanikai pol\u00edroz\u00e1si (CMP) technol\u00f3gi\u00e1val epi-ready fel\u00fcletre dolgoznak fel. Ez biztos\u00edtja az ultraalacsony fel\u00fcleti \u00e9rdess\u00e9get, a minim\u00e1lis felsz\u00edn alatti s\u00e9r\u00fcl\u00e9st \u00e9s az optim\u00e1lis felt\u00e9teleket az epitaxi\u00e1lis r\u00e9tegn\u00f6veked\u00e9si folyamatokhoz, p\u00e9ld\u00e1ul a k\u00e9miai g\u0151zf\u00e1zis\u00fa lev\u00e1laszt\u00e1shoz (CVD). Az eredm\u00e9ny jobb eszk\u00f6zteljes\u00edtm\u00e9ny, nagyobb hozam \u00e9s nagyobb megb\u00edzhat\u00f3s\u00e1g a kritikus alkalmaz\u00e1sokban.<\/p>\n

\n

\"6F\u0151 jellemz\u0151k<\/strong><\/span><\/h3>\n

Epitaxiak\u00e9sz fel\u00fclet a kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 n\u00f6veked\u00e9shez<\/strong>
Az osty\u00e1t t\u00fck\u00f6rsima CMP-csiszolt fel\u00fclettel sz\u00e1ll\u00edtj\u00e1k, amely nanom\u00e9ter alatti \u00e9rdess\u00e9get \u00e9r el. Ez kiv\u00e1l\u00f3 kompatibilit\u00e1st biztos\u00edt az epitaxi\u00e1lis n\u00f6veked\u00e9si folyamatokkal, k\u00fcl\u00f6n\u00f6sen a graf\u00e9nk\u00e9pz\u00e9s \u00e9s az UV-\u00e9rz\u00e9keny eszk\u00f6z\u00f6k gy\u00e1rt\u00e1sa eset\u00e9n.<\/p>\n

Optimaliz\u00e1lva MEMS-hez \u00e9s zord k\u00f6rnyezethez<\/strong>
A 6 h\u00fcvelykes N-t\u00edpus\u00fa 6H SiC epitaxiaszelet kiv\u00e9teles h\u0151stabilit\u00e1st mutat, \u00e9s 500 \u00b0C feletti h\u0151m\u00e9rs\u00e9kleten is meg\u0151rzi teljes\u00edtm\u00e9ny\u00e9t. Nagy mechanikai szil\u00e1rds\u00e1ga \u00e9s k\u00e9miai inertit\u00e1sa alkalmass\u00e1 teszi a sz\u00e9ls\u0151s\u00e9ges k\u00f6rnyezetben m\u0171k\u00f6d\u0151 MEMS-eszk\u00f6z\u00f6kh\u00f6z, p\u00e9ld\u00e1ul a rep\u00fcl\u0151g\u00e9piparban, az energiaiparban \u00e9s az ipari fel\u00fcgyeleti rendszerekben.<\/p>\n

Sz\u00e9les s\u00e1vsz\u00e9less\u00e9g UV \u00e9rz\u00e9kel\u0151 alkalmaz\u00e1sokhoz<\/strong>
A k\u00f6r\u00fclbel\u00fcl 2,96 eV-os s\u00e1vh\u00e9zaggal ez az ostya term\u00e9szetesen \u00e9rz\u00e9keny az ultraibolya f\u00e9nyre, mik\u00f6zben \u00e9rz\u00e9ketlen marad a l\u00e1that\u00f3 hull\u00e1mhossz\u00fas\u00e1g\u00fa f\u00e9nyre. Ez\u00e1ltal ide\u00e1lis a l\u00e1ngok \u00e9szlel\u00e9s\u00e9ben, a k\u00f6rnyezeti megfigyel\u00e9sben \u00e9s a v\u00e9delmi rendszerekben haszn\u00e1lt, napf\u00e9nyre vak UV-\u00e9rz\u00e9kel\u0151kh\u00f6z.<\/p>\n

Stabil elektromos teljes\u00edtm\u00e9ny<\/strong>
A nitrog\u00e9nnel t\u00f6rt\u00e9n\u0151 adal\u00e9kol\u00e1s megb\u00edzhat\u00f3 N-t\u00edpus\u00fa vezet\u0151k\u00e9pess\u00e9get biztos\u00edt, ami k\u00f6vetkezetes elektromos jellemz\u0151ket \u00e9s stabil ohmos \u00e9rintkez\u00e9st tesz lehet\u0151v\u00e9. Ez elengedhetetlen a prec\u00edzi\u00f3s \u00e9rz\u00e9kel\u0151 eszk\u00f6z\u00f6k \u00e9s optoelektronikai alkalmaz\u00e1sok sz\u00e1m\u00e1ra.<\/p>\n

Ir\u00e1ny\u00edtott krist\u00e1lyorient\u00e1ci\u00f3<\/strong>
Az ostya 4\u00b0-os tengelyen k\u00edv\u00fcli orient\u00e1ci\u00f3val rendelkezik a ir\u00e1ny\u00e1ba (\u00b10,5\u00b0), ami el\u0151seg\u00edti a step-flow epitaxi\u00e1lis n\u00f6veked\u00e9st \u00e9s cs\u00f6kkenti a fel\u00fcleti hib\u00e1kat. Ez jav\u00edtja az egyenletess\u00e9get \u00e9s a megism\u00e9telhet\u0151s\u00e9get az eszk\u00f6zgy\u00e1rt\u00e1s sor\u00e1n.<\/p>\n

\n

Alkalmaz\u00e1sok<\/strong><\/span><\/h3>\n

MEMS eszk\u00f6z\u00f6k sz\u00e9ls\u0151s\u00e9ges k\u00f6r\u00fclm\u00e9nyek k\u00f6z\u00f6tt<\/strong>
A 6 h\u00fcvelykes N-t\u00edpus\u00fa 6H SiC epitaxiaszeletet sz\u00e9les k\u00f6rben haszn\u00e1lj\u00e1k MEMS-\u00e9rz\u00e9kel\u0151kben, p\u00e9ld\u00e1ul magas h\u0151m\u00e9rs\u00e9klet\u0171 \u00e9s nagy ig\u00e9nybev\u00e9telnek kitett k\u00f6rnyezetekre tervezett nyom\u00e1s\u00e9rz\u00e9kel\u0151kben \u00e9s gyorsul\u00e1sm\u00e9r\u0151kben. Ezek az eszk\u00f6z\u00f6k kritikus fontoss\u00e1g\u00faak az olaj- \u00e9s g\u00e1zkutat\u00e1sban, az aut\u00f3ipari rendszerekben \u00e9s a rep\u00fcl\u0151g\u00e9p-turbin\u00e1k ellen\u0151rz\u00e9s\u00e9ben.<\/p>\n

Nap-vak UV-\u00e9rz\u00e9kel\u0151k<\/strong>
Sz\u00e9les s\u00e1vsz\u00e9less\u00e9g\u00e9nek k\u00f6sz\u00f6nhet\u0151en ez az ostya ide\u00e1lis olyan UV-f\u00e9ny\u00e9rz\u00e9kel\u0151k gy\u00e1rt\u00e1s\u00e1ra, amelyek a l\u00e1that\u00f3 f\u00e9ny zavar\u00e1sa n\u00e9lk\u00fcl k\u00e9pesek az ultraibolya sug\u00e1rz\u00e1s pontos \u00e9rz\u00e9kel\u00e9s\u00e9re. Ez a k\u00e9pess\u00e9g elengedhetetlen a l\u00e1ng\u00e9rz\u00e9kel\u0151 rendszerekhez \u00e9s a fejlett optikai \u00e9rz\u00e9kel\u00e9si technol\u00f3gi\u00e1khoz.<\/p>\n

Graf\u00e9n n\u00f6veked\u00e9si szubsztr\u00e1t<\/strong>
Az ostya kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 szubsztr\u00e1tk\u00e9nt szolg\u00e1l az epitaxi\u00e1lis graf\u00e9nn\u00f6veszt\u00e9shez. Magas h\u0151m\u00e9rs\u00e9klet\u0171 v\u00e1kuumk\u00f6r\u00fclm\u00e9nyek k\u00f6z\u00f6tt a szil\u00edciumatomok szublim\u00e1lnak a SiC fel\u00fclet\u00e9r\u0151l, \u00e9s j\u00f3l rendezett graf\u00e9nr\u00e9tegeket hagynak maguk ut\u00e1n. Ezt az elj\u00e1r\u00e1st sz\u00e9les k\u00f6rben alkalmazz\u00e1k a fejlett elektronik\u00e1ban, a nagysebess\u00e9g\u0171 eszk\u00f6z\u00f6kben \u00e9s a kvantumkutat\u00e1sban.<\/p>\n

Fejlett optoelektronikai rendszerek<\/strong>
A 6H-SiC optikai \u00e1tl\u00e1tsz\u00f3s\u00e1ga \u00e9s anyagstabilit\u00e1sa alkalmass\u00e1 teszi speci\u00e1lis optoelektronikai eszk\u00f6z\u00f6kh\u00f6z, t\u00f6bbek k\u00f6z\u00f6tt UV-fotodi\u00f3d\u00e1khoz \u00e9s nagyfrekvenci\u00e1s alkatr\u00e9szekhez.<\/p>\n

\"\"<\/p>\n

\n

M\u0171szaki specifik\u00e1ci\u00f3k<\/strong><\/span><\/h3>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Ingatlan<\/th>\nSpecifik\u00e1ci\u00f3<\/th>\n<\/tr>\n<\/thead>\n
Anyag<\/td>\nSiC monokrist\u00e1ly<\/td>\n<\/tr>\n
\u00c1tm\u00e9r\u0151<\/td>\n150 mm (6 h\u00fcvelyk)<\/td>\n<\/tr>\n
Vastags\u00e1g<\/td>\n350 \u00b5m<\/td>\n<\/tr>\n
Polytype<\/td>\n6H<\/td>\n<\/tr>\n
Vezet\u0151k\u00e9pess\u00e9g t\u00edpusa<\/td>\nN-t\u00edpus\u00fa (nitrog\u00e9nnel adal\u00e9kolt)<\/td>\n<\/tr>\n
Orient\u00e1ci\u00f3<\/td>\n4\u00b0 \u00b10.5\u00b0 fel\u00e9<\/td>\n<\/tr>\n
Fel\u00fcletkezel\u00e9s<\/td>\nSSP \/ DSP \/ CMP \/ MP<\/td>\n<\/tr>\n
Fel\u00fclet min\u0151s\u00e9ge<\/td>\nEpitaxis-k\u00e9sz (CMP pol\u00edrozott)<\/td>\n<\/tr>\n
Bandgap<\/td>\n~2,96 eV<\/td>\n<\/tr>\n
Alkalmaz\u00e1s f\u00f3kusz<\/td>\nMEMS \/ UV \u00e9rz\u00e9kel\u0151k \/ graf\u00e9n n\u00f6veked\u00e9s<\/td>\n<\/tr>\n
Csomagol\u00e1s<\/td>\nKazetta vagy egyszelet\u0171 ostyatart\u00e1ly<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\n

Testreszab\u00e1si lehet\u0151s\u00e9gek<\/strong><\/span><\/h3>\n

Rugalmas testreszab\u00e1si szolg\u00e1ltat\u00e1sokat ny\u00fajtunk az egyedi folyamat- \u00e9s alkalmaz\u00e1si k\u00f6vetelm\u00e9nyek teljes\u00edt\u00e9s\u00e9hez. A rendelkez\u00e9sre \u00e1ll\u00f3 opci\u00f3k a k\u00f6vetkez\u0151k:<\/p>\n

    \n
  • Egyedi ostyavastags\u00e1g<\/li>\n
  • K\u00fcl\u00f6nb\u00f6z\u0151 v\u00e1g\u00e1si sz\u00f6gek (tengelyir\u00e1ny\u00fa vagy szabott t\u00e1jol\u00e1s)<\/li>\n
  • Doppingkoncentr\u00e1ci\u00f3 \u00e9s ellen\u00e1ll\u00e1s-szab\u00e1lyoz\u00e1s<\/li>\n
  • Fel\u00fcletkezel\u00e9s \u00e9s pol\u00edroz\u00e1si fokozat<\/li>\n<\/ul>\n

    Ez biztos\u00edtja a k\u00fcl\u00f6nb\u00f6z\u0151 epitaxi\u00e1lis elj\u00e1r\u00e1sokkal \u00e9s eszk\u00f6zszerkezetekkel val\u00f3 kompatibilit\u00e1st, legyen sz\u00f3 kutat\u00e1sr\u00f3l, protot\u00edpusgy\u00e1rt\u00e1sr\u00f3l vagy k\u00eds\u00e9rleti m\u00e9ret\u0171 gy\u00e1rt\u00e1sr\u00f3l.<\/p>\n

    \n

    GYIK<\/strong><\/span><\/h3>\n

    1. k\u00e9rd\u00e9s: Mit jelent az \u201cepi-ready\u201d az adott ostya eset\u00e9ben?<\/strong>
    V: Ez azt jelenti, hogy az ostyafel\u00fcletet CMP-technol\u00f3gi\u00e1val prec\u00edzen csiszolt\u00e1k, hogy ultraalacsony \u00e9rdess\u00e9get \u00e9rjenek el, ami tov\u00e1bbi feldolgoz\u00e1s n\u00e9lk\u00fcl azonnal alkalmass\u00e1 teszi az epitaxi\u00e1lis n\u00f6veszt\u00e9sre.<\/p>\n

    2. k\u00e9rd\u00e9s: Mi\u00e9rt haszn\u00e1ljon 6H-SiC-et m\u00e1s politechnikai t\u00edpusok helyett?<\/strong>
    V: A 6H-SiC s\u00e1vh\u00e9zag\u00e1nak \u00e9s krist\u00e1lyszerkezet\u00e9nek k\u00f6sz\u00f6nhet\u0151en el\u0151ny\u00f6s az UV-detekt\u00e1l\u00e1s, a graf\u00e9nn\u00f6veszt\u00e9s \u00e9s az optikai alkalmaz\u00e1sok ter\u00e9n.<\/p>\n

    3. k\u00e9rd\u00e9s: Alkalmas ez az ostya ipari termel\u00e9sre?<\/strong>
    V: Igen, a 6 h\u00fcvelykes osty\u00e1kat sz\u00e9les k\u00f6rben haszn\u00e1lj\u00e1k k\u00eds\u00e9rleti gy\u00e1rt\u00e1sra \u00e9s fejlett K+F-re, a min\u0151s\u00e9gi oszt\u00e1ly \u00e9s az alkalmaz\u00e1si k\u00f6vetelm\u00e9nyek f\u00fcggv\u00e9ny\u00e9ben.<\/p>\n

    4. k\u00e9rd\u00e9s: K\u00e9rhetek egyedi specifik\u00e1ci\u00f3kat?<\/strong>
    V: Igen, t\u00e1mogatjuk a teljes testreszab\u00e1st, bele\u00e9rtve a vastags\u00e1got, a t\u00e1jol\u00e1st, a doppingot \u00e9s a fel\u00fcletkezel\u00e9seket.<\/p>\n

    \n

    Mi\u00e9rt v\u00e1lassza ezt a 6 h\u00fcvelykes N-t\u00edpus\u00fa 6H SiC Epitaxy Wafer-t?<\/strong><\/span><\/h3>\n

    Ezt a lapk\u00e1t \u00fagy tervezt\u00e9k, hogy k\u00f6vetkezetes teljes\u00edtm\u00e9nyt, kiv\u00e1l\u00f3 anyagmin\u0151s\u00e9get \u00e9s kiv\u00e1l\u00f3 kompatibilit\u00e1st biztos\u00edtson a fejlett f\u00e9lvezet\u0151 elj\u00e1r\u00e1sokkal. Ide\u00e1lis megold\u00e1s a m\u00e9rn\u00f6k\u00f6k \u00e9s kutat\u00f3k sz\u00e1m\u00e1ra, akik megb\u00edzhat\u00f3 szubsztr\u00e1tokat keresnek MEMS, UV-\u00e9rz\u00e9kel\u00e9s \u00e9s graf\u00e9nalap\u00fa technol\u00f3gi\u00e1khoz.<\/p>","protected":false},"excerpt":{"rendered":"

    A 6 h\u00fcvelykes N-t\u00edpus\u00fa 6H SiC epitaxi\u00e1s ostya egy nagy teljes\u00edtm\u00e9ny\u0171 f\u00e9lvezet\u0151 szubsztr\u00e1t, amelyet fejlett alkalmaz\u00e1sokhoz terveztek, bele\u00e9rtve a MEMS eszk\u00f6z\u00f6ket, az ultraibolya (UV) \u00e9rz\u00e9kel\u0151ket \u00e9s az epitaxi\u00e1lis graf\u00e9nn\u00f6veszt\u00e9st. A kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 szil\u00edcium-karbid (SiC) egykrist\u00e1lyokb\u00f3l gy\u00e1rtott ostya kiv\u00e1l\u00f3 elektromos, termikus \u00e9s mechanikai tulajdons\u00e1gokat egyes\u00edt, \u00edgy ide\u00e1lis v\u00e1laszt\u00e1s olyan ig\u00e9nyes k\u00f6rnyezetekben, ahol a hagyom\u00e1nyos szil\u00edcium anyagok nem k\u00e9pesek megb\u00edzhat\u00f3an teljes\u00edteni.<\/p>","protected":false},"featured_media":2420,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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