{"id":2354,"date":"2026-04-22T06:34:59","date_gmt":"2026-04-22T06:34:59","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2354"},"modified":"2026-04-22T07:16:34","modified_gmt":"2026-04-22T07:16:34","slug":"ai300-medium-beam-high-temperature-ion-implantation-system-for-12-inch-wafer-processing","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/hu\/product\/ai300-medium-beam-high-temperature-ion-implantation-system-for-12-inch-wafer-processing\/","title":{"rendered":"Ai300 (k\u00f6zepes sug\u00e1r) magas h\u0151m\u00e9rs\u00e9klet\u0171 ionimplant\u00e1ci\u00f3s rendszer 12 h\u00fcvelykes osty\u00e1k feldolgoz\u00e1s\u00e1hoz"},"content":{"rendered":"

\"Ai300Az Ai300 (Medium Beam) magas h\u0151m\u00e9rs\u00e9klet\u0171 ionimplant\u00e1ci\u00f3s rendszert 12 h\u00fcvelykes szil\u00edciumszelet f\u00e9lvezet\u0151 gy\u00e1rt\u00f3sorokhoz tervezt\u00e9k. Ez egy k\u00f6zepes \u00e1ramer\u0151ss\u00e9g\u0171 ionimplant\u00e1l\u00f3 berendez\u00e9s, amelyet a szil\u00edciumalap\u00fa \u00e9s a sz\u00e9les s\u00e1vsz\u00e9less\u00e9g\u0171 f\u00e9lvezet\u0151-alkalmaz\u00e1sokban alkalmazott fejlett adal\u00e9kol\u00e1si elj\u00e1r\u00e1sokhoz fejlesztettek ki, bele\u00e9rtve a SiC technol\u00f3giai vonalakat is.<\/p>\n

A rendszer 5 keV-t\u00f3l 300 keV-ig terjed\u0151 energiatartom\u00e1nyt t\u00e1mogat, lehet\u0151v\u00e9 t\u00e9ve a rugalmas implant\u00e1ci\u00f3t a sek\u00e9ly \u00e1tmenet kialak\u00edt\u00e1s\u00e1t\u00f3l a m\u00e9ly adal\u00e9kol\u00e1si alkalmaz\u00e1sokig. Fel van szerelve egy magas h\u0151m\u00e9rs\u00e9klet\u0171, ak\u00e1r 400 \u00b0C-os maxim\u00e1lis h\u0151m\u00e9rs\u00e9klet\u0171, f\u0171t\u00f6tt ostyasz\u00ednpaddal, amely lehet\u0151v\u00e9 teszi az adal\u00e9kanyag jobb aktiv\u00e1l\u00e1s\u00e1t \u00e9s a r\u00e1csszerkezet kisebb k\u00e1rosod\u00e1s\u00e1t az implant\u00e1ci\u00f3 sor\u00e1n.<\/p>\n

A stabil sug\u00e1rz\u00e1si teljes\u00edtm\u00e9ny, a nagy pontoss\u00e1g\u00fa vez\u00e9rl\u00e9s \u00e9s a nagym\u00e9ret\u0171 integr\u00e1lt \u00e1ramk\u00f6ri folyamatokkal val\u00f3 kompatibilit\u00e1s r\u00e9v\u00e9n az Ai300 rendszer alkalmas a fejlett f\u00e9lvezet\u0151gy\u00e1rt\u00e1si k\u00f6rnyezetek sz\u00e1m\u00e1ra.<\/p>\n

\n

Jellemz\u0151k<\/h2>\n

Magas h\u0151m\u00e9rs\u00e9klet\u0171 implant\u00e1tumk\u00e9pess\u00e9g<\/h3>\n

Fel van szerelve egy f\u0171t\u00f6tt ostyasz\u00ednpaddal, amely ak\u00e1r 400\u00b0C-os h\u0151m\u00e9rs\u00e9kletet is t\u00e1mogat, jav\u00edtva az implant\u00e1ci\u00f3 min\u0151s\u00e9g\u00e9t \u00e9s az adal\u00e9kanyag-aktiv\u00e1l\u00e1s hat\u00e9konys\u00e1g\u00e1t.<\/p>\n

Sz\u00e9les energiatartom\u00e1ny<\/h3>\n

Az 5-300 keV-os energiatartom\u00e1ny t\u00e1mogatja mind a sek\u00e9ly, mind a m\u00e9ly implant\u00e1ci\u00f3s elj\u00e1r\u00e1sokat a fejlett eszk\u00f6zszerkezetek sz\u00e1m\u00e1ra.<\/p>\n

Nagy pontoss\u00e1g\u00fa sug\u00e1rvez\u00e9rl\u00e9s<\/h3>\n

Nagy pontoss\u00e1g\u00fa be\u00fcltet\u00e9st biztos\u00edt \u2264 0,1\u00b0 sz\u00f6gpontoss\u00e1ggal, \u2264 0,1\u00b0 sug\u00e1rp\u00e1rhuzamoss\u00e1ggal, \u2264 0,5% egyenletess\u00e9ggel \u00e9s \u2264 0,5% ism\u00e9telhet\u0151s\u00e9ggel.<\/p>\n

Nagy \u00e1tereszt\u0151k\u00e9pess\u00e9g<\/h3>\n

\u00d3r\u00e1nk\u00e9nt ak\u00e1r \u2265 500 osty\u00e1t is k\u00e9pes \u00e1tvinni, alkalmas nagy volumen\u0171 f\u00e9lvezet\u0151gy\u00e1rt\u00e1shoz.<\/p>\n

Fejlett ionforr\u00e1s-k\u00e9pess\u00e9g<\/h3>\n

T\u00f6bbf\u00e9le be\u00fcltetett elemet t\u00e1mogat, bele\u00e9rtve a C, B, P, N, He \u00e9s Ar elemeket, \u00edgy megfelel a k\u00fcl\u00f6nb\u00f6z\u0151 f\u00e9lvezet\u0151 folyamatok k\u00f6vetelm\u00e9nyeinek.<\/p>\n

LSI-folyamat kompatibilit\u00e1s<\/h3>\n

Teljesen kompatibilis a nagym\u00e9ret\u0171 integr\u00e1lt \u00e1ramk\u00f6r\u00f6k gy\u00e1rt\u00e1si folyamataival \u00e9s a fejlett eszk\u00f6zgy\u00e1rt\u00e1ssal.<\/p>\n

\"\" \"\"<\/p>\n

\n

F\u0151bb specifik\u00e1ci\u00f3k<\/h2>\n

Folyamat param\u00e9terek<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
T\u00e9tel<\/th>\nSpecifik\u00e1ci\u00f3<\/th>\n<\/tr>\n<\/thead>\n
Wafer m\u00e9ret<\/td>\n12 h\u00fcvelyk<\/td>\n<\/tr>\n
Energia tartom\u00e1ny<\/td>\n5-300 keV<\/td>\n<\/tr>\n
Be\u00fcltetett elemek<\/td>\nC, B, P, N, He, Ar<\/td>\n<\/tr>\n
D\u00f3zistartom\u00e1ny<\/td>\n1E11-1E16 ion\/cm\u00b2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Sug\u00e1r teljes\u00edtm\u00e9ny<\/h3>\n
\n
\n\n\n\n\n\n\n
T\u00e9tel<\/th>\nSpecifik\u00e1ci\u00f3<\/th>\n<\/tr>\n<\/thead>\n
Gerendastabilit\u00e1s<\/td>\n\u2264 10% \/ \u00f3ra (\u22641 sug\u00e1r megszakad\u00e1sa vagy \u00edvesed\u00e9s \u00f3r\u00e1nk\u00e9nt)<\/td>\n<\/tr>\n
Gerendap\u00e1rhuzamoss\u00e1g<\/td>\n\u2264 0.1\u00b0<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Be\u00fcltet\u00e9s pontoss\u00e1ga<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
T\u00e9tel<\/th>\nSpecifik\u00e1ci\u00f3<\/th>\n<\/tr>\n<\/thead>\n
Implant\u00e1tum sz\u00f6gtartom\u00e1ny<\/td>\n0\u00b0-45\u00b0<\/td>\n<\/tr>\n
Sz\u00f6gpontoss\u00e1g<\/td>\n\u2264 0.1\u00b0<\/td>\n<\/tr>\n
Egyenletess\u00e9g (1\u03c3)<\/td>\n\u2264 0,5% (P+, 1E14, 100 keV)<\/td>\n<\/tr>\n
Ism\u00e9telhet\u0151s\u00e9g (1\u03c3)<\/td>\n\u2264 0,5%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Rendszer teljes\u00edtm\u00e9nye<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n\n\n
T\u00e9tel<\/th>\nSpecifik\u00e1ci\u00f3<\/th>\n<\/tr>\n<\/thead>\n
\u00c1tviteli teljes\u00edtm\u00e9ny<\/td>\n\u2265 500 ostya \u00f3r\u00e1nk\u00e9nt<\/td>\n<\/tr>\n
Maxim\u00e1lis implant\u00e1tum h\u0151m\u00e9rs\u00e9klet<\/td>\n400\u00b0C<\/td>\n<\/tr>\n
Berendez\u00e9s m\u00e9rete<\/td>\n6400 \u00d7 3640 \u00d7 3100 mm<\/td>\n<\/tr>\n
V\u00e1kuumszint<\/td>\n5E-7 Torr<\/td>\n<\/tr>\n
R\u00f6ntgensug\u00e1r-sziv\u00e1rg\u00e1s<\/td>\n\u2264 0,3 \u03bcSv\/h<\/td>\n<\/tr>\n
Szkennel\u00e9si m\u00f3d<\/td>\nV\u00edzszintes elektrosztatikus p\u00e1szt\u00e1z\u00e1s + f\u00fcgg\u0151leges mechanikus p\u00e1szt\u00e1z\u00e1s<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\n

Alkalmaz\u00e1si mez\u0151k<\/h2>\n

SiC f\u00e9lvezet\u0151k feldolgoz\u00e1sa<\/h3>\n

Szil\u00edcium-karbid eszk\u00f6z\u00f6k gy\u00e1rt\u00e1s\u00e1n\u00e1l haszn\u00e1lj\u00e1k, t\u00e1mogatva a sz\u00e9les s\u00e1vsz\u00e9less\u00e9g\u0171 anyagokhoz sz\u00fcks\u00e9ges magas h\u0151m\u00e9rs\u00e9klet\u0171 implant\u00e1ci\u00f3s folyamatokat.<\/p>\n

Szil\u00edcium-alap\u00fa f\u00e9lvezet\u0151gy\u00e1rt\u00e1s<\/h3>\n

Alkalmazhat\u00f3 12 h\u00fcvelykes szil\u00edciumszelet gy\u00e1rt\u00f3sorokon CMOS \u00e9s fejlett integr\u00e1lt \u00e1ramk\u00f6r\u00f6k gy\u00e1rt\u00e1s\u00e1hoz.<\/p>\n

Magas h\u0151m\u00e9rs\u00e9klet\u0171 be\u00fcltet\u00e9si elj\u00e1r\u00e1sok<\/h3>\n

T\u00e1mogatja a megn\u00f6velt ostyah\u0151m\u00e9rs\u00e9kletet ig\u00e9nyl\u0151 implant\u00e1ci\u00f3s folyamatokat a hib\u00e1k cs\u00f6kkent\u00e9se \u00e9s az adal\u00e9kanyag-aktiv\u00e1l\u00e1s jav\u00edt\u00e1sa \u00e9rdek\u00e9ben.<\/p>\n

Teljes\u00edtm\u00e9ny eszk\u00f6z gy\u00e1rt\u00e1s<\/h3>\n

Alkalmas olyan teljes\u00edtm\u00e9ny f\u00e9lvezet\u0151 eszk\u00f6z\u00f6kh\u00f6z, ahol prec\u00edz adal\u00e9kol\u00e1sra \u00e9s nagy energi\u00e1j\u00fa implant\u00e1ci\u00f3ra van sz\u00fcks\u00e9g.<\/p>\n

Fejlett integr\u00e1lt \u00e1ramk\u00f6r\u00f6k gy\u00e1rt\u00e1sa<\/h3>\n

T\u00e1mogatja a nagy pontoss\u00e1g\u00fa \u00e9s nagy \u00e1tereszt\u0151k\u00e9pess\u00e9g\u0171 LSI-folyamatok integr\u00e1l\u00e1s\u00e1t.<\/p>\n

\n

Gyakran ism\u00e9telt k\u00e9rd\u00e9sek<\/h2>\n

1. Milyen ostyam\u00e9retet t\u00e1mogat az Ai300 rendszer<\/h3>\n

A rendszert 12 h\u00fcvelykes szil\u00edcium osty\u00e1khoz tervezt\u00e9k, \u00e9s alkalmas fejlett f\u00e9lvezet\u0151gy\u00e1rt\u00f3 sorok sz\u00e1m\u00e1ra.<\/p>\n

2. Mi a magas h\u0151m\u00e9rs\u00e9klet\u0171 implant\u00e1ci\u00f3s k\u00e9pess\u00e9g legfontosabb el\u0151nye?<\/h3>\n

A rendszer 400 \u00b0C-ig t\u00e1mogatja az implant\u00e1ci\u00f3t, ami seg\u00edt cs\u00f6kkenteni a r\u00e1csszerkezet k\u00e1rosod\u00e1s\u00e1t, jav\u00edtani az adal\u00e9kanyag-aktiv\u00e1l\u00e1st \u00e9s jav\u00edtani az eszk\u00f6z \u00e1ltal\u00e1nos teljes\u00edtm\u00e9ny\u00e9t.<\/p>\n

3. Milyen szint\u0171 pontoss\u00e1got \u00e9s termel\u00e9si hat\u00e9konys\u00e1got biztos\u00edt a rendszer<\/h3>\n

A rendszer 0,1 fokon bel\u00fcli sz\u00f6gpontoss\u00e1got, 0,1 fokon bel\u00fcli sug\u00e1rp\u00e1rhuzamoss\u00e1got, valamint 0,5 sz\u00e1zal\u00e9kon bel\u00fcli egyenletess\u00e9get \u00e9s ism\u00e9telhet\u0151s\u00e9get biztos\u00edt, \u00f3r\u00e1nk\u00e9nt ak\u00e1r 500 ostya \u00e1tmen\u0151 teljes\u00edtm\u00e9ny mellett.<\/p>","protected":false},"excerpt":{"rendered":"

Az Ai300 (Medium Beam) magas h\u0151m\u00e9rs\u00e9klet\u0171 ionimplant\u00e1ci\u00f3s rendszert 12 h\u00fcvelykes szil\u00edciumszelet f\u00e9lvezet\u0151 gy\u00e1rt\u00f3sorokhoz tervezt\u00e9k. Ez egy k\u00f6zepes \u00e1ramer\u0151ss\u00e9g\u0171 ionimplant\u00e1l\u00f3 berendez\u00e9s, amelyet a szil\u00edciumalap\u00fa \u00e9s a sz\u00e9les s\u00e1vsz\u00e9less\u00e9g\u0171 f\u00e9lvezet\u0151-alkalmaz\u00e1sokban alkalmazott fejlett adal\u00e9kol\u00e1si elj\u00e1r\u00e1sokhoz fejlesztettek ki, bele\u00e9rtve a SiC technol\u00f3giai vonalakat is.<\/p>","protected":false},"featured_media":2357,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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