{"id":2346,"date":"2026-04-22T05:56:29","date_gmt":"2026-04-22T05:56:29","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2346"},"modified":"2026-04-22T07:25:08","modified_gmt":"2026-04-22T07:25:08","slug":"ai250-medium-beam-room-temperature-ion-implantation-system-for-6-8-inch-silicon-wafer-processing","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/hu\/product\/ai250-medium-beam-room-temperature-ion-implantation-system-for-6-8-inch-silicon-wafer-processing\/","title":{"rendered":"Ai250 (k\u00f6zepes sug\u00e1r) szobah\u0151m\u00e9rs\u00e9klet\u0171 ionimplant\u00e1ci\u00f3s rendszer 6-8 h\u00fcvelykes szil\u00edciumszelet feldolgoz\u00e1s\u00e1hoz"},"content":{"rendered":"

\"\"Az Ai250 (Medium Beam) ionimplant\u00e1ci\u00f3s rendszert 6 h\u00fcvelykes \u00e9s 8 h\u00fcvelykes szil\u00edciumszelet f\u00e9lvezet\u0151 gy\u00e1rt\u00f3sorokhoz tervezt\u00e9k. Ez egy k\u00f6zepes \u00e1ram\u00fa ionimplant\u00e1l\u00f3, amelyet a fejlett integr\u00e1lt \u00e1ramk\u00f6r\u00f6k gy\u00e1rt\u00e1si folyamataiban haszn\u00e1lnak, stabil sug\u00e1r teljes\u00edtm\u00e9nyt, nagy implant\u00e1ci\u00f3s pontoss\u00e1got \u00e9s megb\u00edzhat\u00f3 d\u00f3zisszab\u00e1lyoz\u00e1st biztos\u00edt.<\/p>\n

A rendszer 5 keV \u00e9s 250 keV k\u00f6z\u00f6tti energiatartom\u00e1nyt t\u00e1mogat, lehet\u0151v\u00e9 t\u00e9ve mind a sek\u00e9ly, mind a m\u00e9ly ionimplant\u00e1ci\u00f3s alkalmaz\u00e1sokat. A rendszer a f\u00e9lvezet\u0151-adal\u00e9kol\u00e1si elj\u00e1r\u00e1sok sz\u00e9les sk\u00e1l\u00e1j\u00e1hoz alkalmas, \u00e9s teljes m\u00e9rt\u00e9kben kompatibilis az LSI-gy\u00e1rt\u00e1si k\u00f6vetelm\u00e9nyekkel.<\/p>\n

\n

Jellemz\u0151k<\/h2>\n

Stabil k\u00f6z\u00e9psug\u00e1r teljes\u00edtm\u00e9ny<\/h3>\n

Stabil ionnyal\u00e1b-kibocs\u00e1t\u00e1st biztos\u00edt hossz\u00fa gy\u00e1rt\u00e1si ciklusok sor\u00e1n, jav\u00edtva a folyamatok konzisztenci\u00e1j\u00e1t \u00e9s cs\u00f6kkentve a v\u00e1ltoz\u00e9konys\u00e1got.<\/p>\n

Sz\u00e9les energiatartom\u00e1ny-k\u00e9pess\u00e9g<\/h3>\n

Az 5-250 keV-os energiatartom\u00e1ny rugalmas implant\u00e1ci\u00f3s k\u00f6vetelm\u00e9nyeket t\u00e1maszt a k\u00fcl\u00f6nb\u00f6z\u0151 eszk\u00f6zszerkezetekhez \u00e9s folyamatcsom\u00f3pontokhoz.<\/p>\n

Nagy pontoss\u00e1g\u00fa folyamatszab\u00e1lyoz\u00e1s<\/h3>\n

Nagy pontoss\u00e1g\u00fa be\u00fcltet\u00e9si teljes\u00edtm\u00e9nyt biztos\u00edt \u2264 0,2\u00b0 sz\u00f6gpontoss\u00e1ggal, \u2264 0,2\u00b0 sug\u00e1rp\u00e1rhuzamoss\u00e1ggal, \u2264 0,5% egyenletess\u00e9ggel \u00e9s \u2264 0,5% ism\u00e9telhet\u0151s\u00e9ggel.<\/p>\n

Nagy \u00e1tereszt\u0151k\u00e9pess\u00e9g<\/h3>\n

\u00d3r\u00e1nk\u00e9nt \u2265 200 osty\u00e1t t\u00e1mogat, alkalmas k\u00f6zepes \u00e9s nagy volumen\u0171 f\u00e9lvezet\u0151gy\u00e1rt\u00e1shoz.<\/p>\n

Mint\u00e1s implant\u00e1tum funkci\u00f3<\/h3>\n

T\u00e1mogatja a t\u00f6bbz\u00f3n\u00e1s \u00e9s kvadr\u00e1nsos be\u00fcltet\u00e9st egyetlen osty\u00e1n, jav\u00edtva a folyamat rugalmass\u00e1g\u00e1t \u00e9s cs\u00f6kkentve a fejleszt\u00e9si k\u00f6lts\u00e9geket.<\/p>\n

LSI-folyamat kompatibilit\u00e1s<\/h3>\n

Teljesen kompatibilis az LSI f\u00e9lvezet\u0151gy\u00e1rt\u00e1si folyamatokkal.<\/p>\n

\"\"<\/p>\n

\n

F\u0151bb specifik\u00e1ci\u00f3k<\/h2>\n

Folyamat param\u00e9terek<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
T\u00e9tel<\/th>\nSpecifik\u00e1ci\u00f3<\/th>\n<\/tr>\n<\/thead>\n
Wafer m\u00e9ret<\/td>\n6-8 h\u00fcvelykes szil\u00edcium osty\u00e1k<\/td>\n<\/tr>\n
Energia tartom\u00e1ny<\/td>\n5-250 keV<\/td>\n<\/tr>\n
Be\u00fcltetett elemek<\/td>\nB+, P+, As+, Ar+, N+, H+, N+, H+<\/td>\n<\/tr>\n
D\u00f3zistartom\u00e1ny<\/td>\n5E11-1E16 ion\/cm\u00b2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Sug\u00e1r teljes\u00edtm\u00e9ny<\/h3>\n
\n
\n\n\n\n\n\n\n\n
T\u00e9tel<\/th>\nSpecifik\u00e1ci\u00f3<\/th>\n<\/tr>\n<\/thead>\n
Maxim\u00e1lis sug\u00e1r\u00e1ram<\/td>\nAr+ \u2265 1300 \u03bcA @ \u2265220 keV
\nB+ \u2265 1000 \u03bcA @ \u2265220 keV
\nP+ \u2265 1300 \u03bcA @ \u2265220 keV
\nN+ \u2265 1000 \u03bcA @ \u2265220 keV<\/td>\n<\/tr>\n
Gerendastabilit\u00e1s<\/td>\n\u2264 15% \/ \u00f3ra (a f\u00e9nysug\u00e1r megszakad\u00e1sa \u00e9s \u00edvesed\u00e9s \u2264 1 alkalommal \u00f3r\u00e1nk\u00e9nt)<\/td>\n<\/tr>\n
Gerendap\u00e1rhuzamoss\u00e1g<\/td>\n\u2264 0.2\u00b0<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Be\u00fcltet\u00e9s pontoss\u00e1ga<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
T\u00e9tel<\/th>\nSpecifik\u00e1ci\u00f3<\/th>\n<\/tr>\n<\/thead>\n
Implant\u00e1tum sz\u00f6gtartom\u00e1ny<\/td>\n0\u00b0-45\u00b0<\/td>\n<\/tr>\n
Sz\u00f6gpontoss\u00e1g<\/td>\n\u2264 0.2\u00b0<\/td>\n<\/tr>\n
Egyenletess\u00e9g (1\u03c3)<\/td>\n\u2264 0,5% (B+, 2E14, 150 keV)<\/td>\n<\/tr>\n
Ism\u00e9telhet\u0151s\u00e9g (1\u03c3)<\/td>\n\u2264 0,5%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Rendszer teljes\u00edtm\u00e9nye<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n\n
T\u00e9tel<\/th>\nSpecifik\u00e1ci\u00f3<\/th>\n<\/tr>\n<\/thead>\n
\u00c1tviteli teljes\u00edtm\u00e9ny<\/td>\n\u2265 200 ostya \u00f3r\u00e1nk\u00e9nt<\/td>\n<\/tr>\n
V\u00e1kuumszint<\/td>\n< 5E-7 Torr<\/td>\n<\/tr>\n
R\u00f6ntgensug\u00e1r-sziv\u00e1rg\u00e1s<\/td>\n\u2264 0,6 \u03bcSv\/h<\/td>\n<\/tr>\n
Szkennel\u00e9si m\u00f3d<\/td>\nV\u00edzszintes elektrosztatikus p\u00e1szt\u00e1z\u00e1s + f\u00fcgg\u0151leges mechanikus p\u00e1szt\u00e1z\u00e1s<\/td>\n<\/tr>\n
Berendez\u00e9s m\u00e9rete<\/td>\n5600 \u00d7 3300 \u00d7 2600 mm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\n

Alkalmaz\u00e1si mez\u0151k<\/h2>\n

F\u00e9lvezet\u0151 eszk\u00f6z\u00f6k gy\u00e1rt\u00e1sa<\/h3>\n

A CMOS logikai eszk\u00f6z\u00f6k gy\u00e1rt\u00e1s\u00e1ban haszn\u00e1lj\u00e1k, pontos adal\u00e9kanyag-be\u00fcltet\u00e9st biztos\u00edt a tranzisztorok kialak\u00edt\u00e1s\u00e1hoz.<\/p>\n

Integr\u00e1lt \u00e1ramk\u00f6r gy\u00e1rt\u00e1s<\/h3>\n

LSI \u00e9s fejlett IC gy\u00e1rt\u00e1si folyamatokban alkalmazz\u00e1k, amelyek nagy pontoss\u00e1g\u00fa doppingszab\u00e1lyoz\u00e1st ig\u00e9nyelnek.<\/p>\n

Sek\u00e9ly \u00e9s m\u00e9ly keresztez\u0151d\u00e9si k\u00e9pz\u0151dm\u00e9ny<\/h3>\n

T\u00e1mogatja az implant\u00e1ci\u00f3s folyamatokat a source\/drain tervez\u00e9shez \u00e9s az \u00e1tmenet m\u00e9lys\u00e9g\u00e9nek szab\u00e1lyoz\u00e1s\u00e1hoz.<\/p>\n

Dopant Engineering<\/h3>\n

Szil\u00edciumszelet elektromos tulajdons\u00e1gainak pontos ionimplant\u00e1ci\u00f3val t\u00f6rt\u00e9n\u0151 szab\u00e1lyoz\u00e1s\u00e1ra szolg\u00e1l.<\/p>\n

Folyamatfejleszt\u00e9s \u00e9s K+F<\/h3>\n

Alkalmas f\u00e9lvezet\u0151 folyamatok fejleszt\u00e9s\u00e9re, k\u00eds\u00e9rleti gy\u00e1rt\u00e1sra \u00e9s k\u00eds\u00e9rleti eszk\u00f6zgy\u00e1rt\u00e1sra.<\/p>\n

\n

Gyakran ism\u00e9telt k\u00e9rd\u00e9sek<\/h2>\n

1. Milyen ostyam\u00e9reteket t\u00e1mogat az Ai250<\/h3>\n

A rendszer t\u00e1mogatja a 6 h\u00fcvelykes \u00e9s 8 h\u00fcvelykes szil\u00edcium osty\u00e1kat, \u00e9s alkalmas az \u00e1ltal\u00e1nos f\u00e9lvezet\u0151 gy\u00e1rt\u00f3sorokhoz.<\/p>\n

2. Mekkora a rendszer energiatartom\u00e1nya<\/h3>\n

Az energiatartom\u00e1ny 5 keV \u00e9s 250 keV k\u00f6z\u00f6tt van, ami a f\u00e9lvezet\u0151 eszk\u00f6z\u00f6k gy\u00e1rt\u00e1s\u00e1hoz sz\u00fcks\u00e9ges sek\u00e9ly \u00e9s m\u00e9ly implant\u00e1ci\u00f3s folyamatokat egyar\u00e1nt t\u00e1mogatja.<\/p>\n

3. Milyen szint\u0171 folyamatpontoss\u00e1got biztos\u00edt a rendszer<\/h3>\n

A rendszer 0,2\u00b0-on bel\u00fcli sz\u00f6gpontoss\u00e1got, 0,2\u00b0-on bel\u00fcli sug\u00e1rp\u00e1rhuzamoss\u00e1got, valamint 0,5%-n bel\u00fcli egyenletess\u00e9get \u00e9s ism\u00e9telhet\u0151s\u00e9get biztos\u00edt, ami stabil \u00e9s nagy hozam\u00fa gy\u00e1rt\u00e1si teljes\u00edtm\u00e9nyt biztos\u00edt.<\/p>","protected":false},"excerpt":{"rendered":"

Az Ai250 (Medium Beam) ionimplant\u00e1ci\u00f3s rendszert 6 h\u00fcvelykes \u00e9s 8 h\u00fcvelykes szil\u00edciumszelet f\u00e9lvezet\u0151 gy\u00e1rt\u00f3sorokhoz tervezt\u00e9k. Ez egy k\u00f6zepes \u00e1ram\u00fa ionimplant\u00e1l\u00f3, amelyet a fejlett integr\u00e1lt \u00e1ramk\u00f6r\u00f6k gy\u00e1rt\u00e1si folyamataiban haszn\u00e1lnak, stabil sug\u00e1r teljes\u00edtm\u00e9nyt, nagy implant\u00e1ci\u00f3s pontoss\u00e1got \u00e9s megb\u00edzhat\u00f3 d\u00f3zisszab\u00e1lyoz\u00e1st biztos\u00edt.<\/p>","protected":false},"featured_media":2347,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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