{"id":2196,"date":"2026-04-14T06:34:45","date_gmt":"2026-04-14T06:34:45","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2196"},"modified":"2026-04-14T06:34:48","modified_gmt":"2026-04-14T06:34:48","slug":"2-inch-6h-n-silicon-carbide-wafer","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/hu\/product\/2-inch-6h-n-silicon-carbide-wafer\/","title":{"rendered":"2 h\u00fcvelykes 6H-N szil\u00edciumkarbid ostya"},"content":{"rendered":"

\"2A 2 h\u00fcvelykes 6H-N szil\u00edciumkarbid ostya egykrist\u00e1lyos szubsztr\u00e1t, amelyet kutat\u00e1si \u00e9s eszk\u00f6zszint\u0171 alkalmaz\u00e1sokhoz egyar\u00e1nt terveztek. A 6H polyt\u00edpus hatsz\u00f6glet\u0171 krist\u00e1lyszerkezettel rendelkezik, amely stabil elektromos vezet\u0151k\u00e9pess\u00e9get \u00e9s j\u00f3 h\u0151teljes\u00edtm\u00e9nyt biztos\u00edt ig\u00e9nyes k\u00f6r\u00fclm\u00e9nyek k\u00f6z\u00f6tt.<\/p>\n

A 6H-SiC k\u00f6r\u00fclbel\u00fcl 3,02 eV-os s\u00e1vh\u00e9zag\u00e1val olyan k\u00f6rnyezetben is m\u0171k\u00f6d\u0151k\u00e9pes, ahol a hagyom\u00e1nyos szil\u00edcium anyagok nem m\u0171k\u00f6dnek, k\u00fcl\u00f6n\u00f6sen nagyfesz\u00fclts\u00e9g\u0171, magas h\u0151m\u00e9rs\u00e9klet\u0171 \u00e9s nagyfrekvenci\u00e1s k\u00f6r\u00fclm\u00e9nyek k\u00f6z\u00f6tt. Ez alkalmass\u00e1 teszi a korai f\u00e1zisban l\u00e9v\u0151 eszk\u00f6z\u00f6k protot\u00edpusgy\u00e1rt\u00e1s\u00e1ra, anyagtesztel\u00e9sre \u00e9s speci\u00e1lis elektronikai alkatr\u00e9szek gy\u00e1rt\u00e1s\u00e1ra.<\/p>\n

A ZMSH SiC osty\u00e1kat ellen\u0151rz\u00f6tt krist\u00e1lyn\u00f6veszt\u00e9si technik\u00e1kkal gy\u00e1rtj\u00e1k, hogy biztos\u00edts\u00e1k az egyenletes ellen\u00e1ll\u00e1st, az alacsony hibas\u0171r\u0171s\u00e9get \u00e9s a magas fel\u00fcleti min\u0151s\u00e9get. Ezek a param\u00e9terek kritikus fontoss\u00e1g\u00faak a reproduk\u00e1lhat\u00f3 k\u00eds\u00e9rleti eredm\u00e9nyek \u00e9s az eszk\u00f6z stabil teljes\u00edtm\u00e9ny\u00e9nek biztos\u00edt\u00e1s\u00e1hoz.<\/p>\n

F\u0151 jellemz\u0151k<\/h2>\n

N-t\u00edpus\u00fa vezet\u0151 szerkezet<\/h3>\n

Az osty\u00e1t N-t\u00edpus\u00fa adal\u00e9kol\u00e1ssal l\u00e1tj\u00e1k el, ami stabil elektronvezet\u00e9si utakat biztos\u00edt, amelyek alkalmasak f\u00e9lvezet\u0151 eszk\u00f6z\u00f6k gy\u00e1rt\u00e1s\u00e1ra \u00e9s elektromos jellemz\u00e9si k\u00eds\u00e9rletekre.<\/p>\n

Sz\u00e9les s\u00e1vsz\u00e9less\u00e9g\u0171 f\u00e9lvezet\u0151 anyag<\/h3>\n

A ~3,02 eV-os s\u00e1vh\u00e9zaggal a SiC a szil\u00edciumhoz k\u00e9pest l\u00e9nyegesen nagyobb elektromos t\u00e9rer\u0151ss\u00e9get t\u00e1mogat, ami lehet\u0151v\u00e9 teszi a nagyfesz\u00fclts\u00e9g\u0171 m\u0171k\u00f6d\u00e9st \u00e9s az eszk\u00f6z jobb hat\u00e9konys\u00e1g\u00e1t.<\/p>\n

Magas h\u0151vezet\u0151 k\u00e9pess\u00e9g<\/h3>\n

A SiC kiv\u00e1l\u00f3 h\u0151vezet\u0151 k\u00e9pess\u00e9ggel rendelkezik, ami lehet\u0151v\u00e9 teszi a hat\u00e9kony h\u0151elvezet\u00e9st az akt\u00edv eszk\u00f6zr\u00e9szekb\u0151l. Ez jav\u00edtja az eszk\u00f6z megb\u00edzhat\u00f3s\u00e1g\u00e1t \u00e9s meghosszabb\u00edtja az \u00e9lettartamot a nagy teljes\u00edtm\u00e9ny\u0171 alkalmaz\u00e1sokban.<\/p>\n

Nagy mechanikai szil\u00e1rds\u00e1g<\/h3>\n

A k\u00f6r\u00fclbel\u00fcl 9,2 Mohs-kem\u00e9nys\u00e9g\u0171 SiC-lapk\u00e1k nagym\u00e9rt\u00e9kben ellen\u00e1llnak a mechanikai s\u00e9r\u00fcl\u00e9seknek, a fel\u00fcleti kop\u00e1snak \u00e9s a gy\u00e1rt\u00e1s sor\u00e1n fell\u00e9p\u0151 stressznek.<\/p>\n

Nagy bont\u00e1si elektromos mez\u0151<\/h3>\n

A nagy \u00e1tt\u00f6r\u00e9si t\u00e9rer\u0151ss\u00e9g kompakt eszk\u00f6zszerkezeteket tesz lehet\u0151v\u00e9, mik\u00f6zben nagy fesz\u00fclts\u00e9gt\u0171r\u00e9st biztos\u00edt, \u00edgy a SiC ide\u00e1lis a fejlett teljes\u00edtm\u00e9nyelektronik\u00e1ban.<\/p>\n

M\u0171szaki specifik\u00e1ci\u00f3k<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Param\u00e9ter<\/th>\nSpecifik\u00e1ci\u00f3<\/th>\n<\/tr>\n<\/thead>\n
Anyag<\/td>\nEgykrist\u00e1lyos szil\u00edcium-karbid<\/td>\n<\/tr>\n
M\u00e1rka<\/td>\nZMSH<\/td>\n<\/tr>\n
Polytype<\/td>\n6H-N<\/td>\n<\/tr>\n
\u00c1tm\u00e9r\u0151<\/td>\n2 h\u00fcvelyk (50,8 mm)<\/td>\n<\/tr>\n
Vastags\u00e1g<\/td>\n350 \u03bcm \/ 650 \u03bcm<\/td>\n<\/tr>\n
Vezet\u0151k\u00e9pess\u00e9g t\u00edpusa<\/td>\nN-t\u00edpus\u00fa<\/td>\n<\/tr>\n
Fel\u00fcletkezel\u00e9s<\/td>\nCMP pol\u00edrozott Si-fel\u00fclet<\/td>\n<\/tr>\n
C-arc kezel\u00e9s<\/td>\nMechanikus pol\u00edrozott<\/td>\n<\/tr>\n
Fel\u00fcleti \u00e9rdess\u00e9g<\/td>\nRa < 0,2 nm (Si-fel\u00fclet)<\/td>\n<\/tr>\n
Ellen\u00e1ll\u00e1s<\/td>\n0,015 - 0,028 \u03a9-cm<\/td>\n<\/tr>\n
Sz\u00ednes<\/td>\n\u00c1tl\u00e1tsz\u00f3 \/ Vil\u00e1gosz\u00f6ld<\/td>\n<\/tr>\n
Csomagol\u00e1s<\/td>\nEgyetlen ostya kont\u00e9ner<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

A 6H-SiC anyagi tulajdons\u00e1gai<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Ingatlan<\/th>\n\u00c9rt\u00e9k<\/th>\n<\/tr>\n<\/thead>\n
R\u00e1csparam\u00e9terek<\/td>\na = 3,073 \u00c5, c = 15,117 \u00c5<\/td>\n<\/tr>\n
Mohs kem\u00e9nys\u00e9g<\/td>\n\u2248 9.2<\/td>\n<\/tr>\n
S\u0171r\u0171s\u00e9g<\/td>\n3,21 g\/cm\u00b3<\/td>\n<\/tr>\n
H\u0151t\u00e1gul\u00e1si egy\u00fctthat\u00f3<\/td>\n4-5 \u00d710-\u2076 \/K<\/td>\n<\/tr>\n
T\u00f6r\u00e9smutat\u00f3 (750 nm)<\/td>\nn\u2080 = 2,60, n\u2091 = 2,65<\/td>\n<\/tr>\n
Dielektromos \u00e1lland\u00f3<\/td>\n\u2248 9.66<\/td>\n<\/tr>\n
H\u0151vezet\u0151 k\u00e9pess\u00e9g<\/td>\n~3,7-3,9 W\/cm-K<\/td>\n<\/tr>\n
Bandgap<\/td>\n3,02 eV<\/td>\n<\/tr>\n
Bont\u00e1s elektromos mez\u0151<\/td>\n3-5 \u00d710\u2076 V\/cm<\/td>\n<\/tr>\n
Tel\u00edt\u00e9si sodr\u00f3d\u00e1s sebess\u00e9ge<\/td>\n2,0 \u00d710\u2075 m\/s<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Ezek a saj\u00e1t fizikai tulajdons\u00e1gok alkalmass\u00e1 teszik a 6H-SiC-et olyan alkalmaz\u00e1sokhoz, amelyek sz\u00e9ls\u0151s\u00e9ges elektromos \u00e9s termikus k\u00f6r\u00fclm\u00e9nyek k\u00f6z\u00f6tt is stabil teljes\u00edtm\u00e9nyt ig\u00e9nyelnek.<\/p>\n

\"2Gy\u00e1rt\u00e1si folyamat<\/h2>\n

A SiC egykrist\u00e1lyos osty\u00e1kat jellemz\u0151en a Fizikai g\u0151zsz\u00e1ll\u00edt\u00e1s (PVT) m\u00f3dszer<\/strong>, a sz\u00e9les s\u00e1vsz\u00e9less\u00e9g\u0171 f\u00e9lvezet\u0151 krist\u00e1lyok n\u00f6veszt\u00e9s\u00e9nek kiforrott ipari elj\u00e1r\u00e1sa.<\/p>\n

Ebben az elj\u00e1r\u00e1sban a nagy tisztas\u00e1g\u00fa SiC-alapanyagot 2000 \u00b0C feletti h\u0151m\u00e9rs\u00e9kleten szublim\u00e1lj\u00e1k. A g\u0151zfajt\u00e1kat egy gondosan szab\u00e1lyozott h\u0151gradiensben sz\u00e1ll\u00edtj\u00e1k, \u00e9s egy magkrist\u00e1lyon \u00e1tkrist\u00e1lyosodva egykrist\u00e1lyos ingot (boule) k\u00e9peznek. A n\u00f6veszt\u00e9s ut\u00e1n a csokrot szeletel\u00e9s, lappol\u00e1s, pol\u00edroz\u00e1s \u00e9s tiszt\u00edt\u00e1si l\u00e9p\u00e9sek r\u00e9v\u00e9n osty\u00e1v\u00e1 dolgozz\u00e1k fel.<\/p>\n

Az eszk\u00f6zalkalmaz\u00e1sokhoz az osty\u00e1kat tov\u00e1bbi K\u00e9miai g\u0151zf\u00e1zis\u00fa lev\u00e1laszt\u00e1s (CVD) epitaxi\u00e1lis n\u00f6veszt\u00e9s<\/strong>, ami lehet\u0151v\u00e9 teszi az adal\u00e9kkoncentr\u00e1ci\u00f3 \u00e9s a r\u00e9tegvastags\u00e1g pontos szab\u00e1lyoz\u00e1s\u00e1t. Ez a l\u00e9p\u00e9s elengedhetetlen a MOSFET \u00e9s a di\u00f3da gy\u00e1rt\u00e1s\u00e1hoz.<\/p>\n

Alkalmaz\u00e1sok<\/h2>\n

Teljes\u00edtm\u00e9nyelektronika<\/h3>\n

A 2 h\u00fcvelykes 6H-N SiC osty\u00e1kat a teljes\u00edtm\u00e9ny f\u00e9lvezet\u0151 eszk\u00f6z\u00f6k, t\u00f6bbek k\u00f6z\u00f6tt di\u00f3d\u00e1k, MOSFET strukt\u00far\u00e1k \u00e9s teljes\u00edtm\u00e9nymodulok fejleszt\u00e9s\u00e9hez \u00e9s protot\u00edpusgy\u00e1rt\u00e1s\u00e1hoz haszn\u00e1lj\u00e1k. Ezek az eszk\u00f6z\u00f6k n\u00e9lk\u00fcl\u00f6zhetetlenek az energia\u00e1talak\u00edt\u00f3 rendszerekhez \u00e9s a teljes\u00edtm\u00e9nykezel\u0151 \u00e1ramk\u00f6r\u00f6kh\u00f6z.<\/p>\n

Magas h\u0151m\u00e9rs\u00e9klet\u0171 elektronika<\/h3>\n

A SiC anyagok magas h\u0151m\u00e9rs\u00e9kleten is stabil elektromos teljes\u00edtm\u00e9nyt ny\u00fajtanak, \u00edgy alkalmasak a rep\u00fcl\u0151elektronik\u00e1ban, az ipari fel\u00fcgyeleti rendszerekben \u00e9s az energetikai infrastrukt\u00fara alkalmaz\u00e1saiban.<\/p>\n

F\u00e9lvezet\u0151 kutat\u00e1s \u00e9s fejleszt\u00e9s<\/h3>\n

El\u00e9rhet\u0151s\u00e9g\u00fck \u00e9s k\u00f6lts\u00e9ghat\u00e9konys\u00e1guk miatt a 2 h\u00fcvelykes osty\u00e1kat sz\u00e9les k\u00f6rben haszn\u00e1lj\u00e1k egyetemi laborat\u00f3riumokban, kutat\u00f3int\u00e9zetekben \u00e9s k\u00eds\u00e9rleti gy\u00e1rt\u00e1si k\u00f6rnyezetekben anyagvizsg\u00e1latokhoz \u00e9s eszk\u00f6zk\u00eds\u00e9rletekhez.<\/p>\n

Optoelektronikai \u00e9s speci\u00e1lis alkalmaz\u00e1sok<\/h3>\n

A SiC bizonyos hull\u00e1mhossztartom\u00e1nyokban optikai \u00e1tl\u00e1tsz\u00f3s\u00e1got is mutat, ami lehet\u0151v\u00e9 teszi a speci\u00e1lis fotonikai \u00e9s optoelektronikai kutat\u00e1si alkalmaz\u00e1sokban val\u00f3 felhaszn\u00e1l\u00e1s\u00e1t.<\/p>\n

El\u0151ny\u00f6k\"2<\/h2>\n

A 2 h\u00fcvelykes SiC ostya platform sz\u00e1mos el\u0151nyt k\u00edn\u00e1l a kutat\u00e1s \u00e9s fejleszt\u00e9s sz\u00e1m\u00e1ra:<\/p>\n

    \n
  • Alacsonyabb k\u00f6lts\u00e9g a nagyobb m\u00e9ret\u0171 osty\u00e1khoz k\u00e9pest<\/li>\n
  • K\u00f6nnyebb kezel\u00e9s laborat\u00f3riumi m\u00e9ret\u0171 k\u00eds\u00e9rletekhez<\/li>\n
  • Alkalmas gyors protot\u00edpusok \u00e9s folyamatok tesztel\u00e9s\u00e9re<\/li>\n
  • Stabil krist\u00e1lymin\u0151s\u00e9g a reproduk\u00e1lhat\u00f3 eredm\u00e9nyek\u00e9rt<\/li>\n
  • Rugalmas testreszab\u00e1si lehet\u0151s\u00e9gek a kutat\u00e1si ig\u00e9nyekhez<\/li>\n<\/ul>\n

    GYIK<\/h2>\n

    1. k\u00e9rd\u00e9s: Mi a k\u00fcl\u00f6nbs\u00e9g a 6H-SiC \u00e9s a 4H-SiC k\u00f6z\u00f6tt?<\/h3>\n

    A 6H-SiC \u00e9s a 4H-SiC k\u00fcl\u00f6nb\u00f6z\u0151 krist\u00e1lypolt\u00edpusok. A 4H-SiC \u00e1ltal\u00e1ban nagyobb elektronmozg\u00e9konys\u00e1got biztos\u00edt, \u00e9s sz\u00e9les k\u00f6rben haszn\u00e1lj\u00e1k a kereskedelmi energiaell\u00e1t\u00f3 eszk\u00f6z\u00f6kben, m\u00edg a 6H-SiC stabil elektromos viselked\u00e9st biztos\u00edt, \u00e9s \u00e1ltal\u00e1ban kutat\u00e1si \u00e9s speci\u00e1lis elektronikai alkalmaz\u00e1sokban haszn\u00e1lj\u00e1k.<\/p>\n

    2. k\u00e9rd\u00e9s: Milyen fel\u00fcletkezel\u00e9st alkalmaznak az osty\u00e1n?<\/h3>\n

    A Si-fel\u00fcletet k\u00e9miai mechanikai pol\u00edroz\u00e1ssal (CMP) pol\u00edrozz\u00e1k, hogy ultra-sima fel\u00fcleti min\u0151s\u00e9get \u00e9rjenek el (Ra < 0,2 nm). A C-fel\u00fcletet mechanikusan pol\u00edrozz\u00e1k a k\u00fcl\u00f6nb\u00f6z\u0151 feldolgoz\u00e1si k\u00f6vetelm\u00e9nyek t\u00e1mogat\u00e1sa \u00e9rdek\u00e9ben.<\/p>\n

    3. k\u00e9rd\u00e9s: Lehet-e testreszabni az ostyaspecifik\u00e1ci\u00f3kat?<\/h3>\n

    Igen. A ZMSH testreszab\u00e1si lehet\u0151s\u00e9geket k\u00edn\u00e1l, bele\u00e9rtve a vastags\u00e1got, az adal\u00e9kkoncentr\u00e1ci\u00f3t, az ellen\u00e1ll\u00e1s-tartom\u00e1nyt \u00e9s a fel\u00fclet el\u0151k\u00e9sz\u00edt\u00e9s\u00e9t az \u00fcgyf\u00e9l ig\u00e9nyei szerint.<\/p>","protected":false},"excerpt":{"rendered":"

    A ZMSH kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 2 h\u00fcvelykes 6H-N szil\u00edciumkarbid (SiC) osty\u00e1kat k\u00edn\u00e1l, amelyeket f\u00e9lvezet\u0151-kutat\u00e1shoz, teljes\u00edtm\u00e9nyelektronikai fejleszt\u00e9sekhez \u00e9s nagy teljes\u00edtm\u00e9ny\u0171 elektronikus eszk\u00f6z\u00f6k gy\u00e1rt\u00e1s\u00e1hoz terveztek. A szil\u00edcium-karbid egy sz\u00e9les s\u00e1vsz\u00e9less\u00e9g\u0171 f\u00e9lvezet\u0151 anyag, amely a hagyom\u00e1nyos szil\u00edcium (Si) hordoz\u00f3khoz k\u00e9pest kiv\u00e1l\u00f3 elektromos, termikus \u00e9s mechanikai tulajdons\u00e1gokkal rendelkezik.<\/p>","protected":false},"featured_media":2197,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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