{"id":2183,"date":"2026-04-14T05:20:25","date_gmt":"2026-04-14T05:20:25","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2183"},"modified":"2026-04-14T05:20:28","modified_gmt":"2026-04-14T05:20:28","slug":"8-inch-sic-epitaxial-wafer","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/hu\/product\/8-inch-sic-epitaxial-wafer\/","title":{"rendered":"8 h\u00fcvelykes 200 mm-es SiC epitaxi\u00e1lis ostya"},"content":{"rendered":"

\"8A 8 h\u00fcvelykes SiC epitaxi\u00e1lis ostya a sz\u00e9les s\u00e1vsz\u00e9less\u00e9g\u0171 f\u00e9lvezet\u0151 technol\u00f3gia leg\u00fajabb fejleszt\u00e9s\u00e9t jelenti. A 200 mm-es SiC szubsztr\u00e1tra \u00e9p\u00fcl\u0151, kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 epitaxi\u00e1lis r\u00e9teggel ell\u00e1tott term\u00e9ket \u00fagy tervezt\u00e9k, hogy t\u00e1mogassa a sk\u00e1l\u00e1zhat\u00f3, nagy hat\u00e9konys\u00e1g\u00fa teljes\u00edtm\u00e9ny\u0171 eszk\u00f6z\u00f6k gy\u00e1rt\u00e1s\u00e1t.<\/p>\n

A kisebb m\u00e9ret\u0171 osty\u00e1khoz k\u00e9pest a 8 h\u00fcvelykes SiC-osty\u00e1k jelent\u0151sen n\u00f6velik a felhaszn\u00e1lhat\u00f3 ter\u00fcletet, ami nagyobb eszk\u00f6zkibocs\u00e1t\u00e1st tesz lehet\u0151v\u00e9 osty\u00e1nk\u00e9nt, \u00e9s cs\u00f6kkenti a chipenk\u00e9nti k\u00f6lts\u00e9geket. Ez kritikus megold\u00e1st jelent a szil\u00edciumkarbid teljes\u00edtm\u00e9nyeszk\u00f6z\u00f6k nagy\u00fczemi gy\u00e1rt\u00e1s\u00e1ra \u00e1tt\u00e9r\u0151 ipar\u00e1gak sz\u00e1m\u00e1ra.<\/p>\n

A SiC epitaxi\u00e1lis osty\u00e1k egyes\u00edtik a szil\u00edcium-karbid bels\u0151 el\u0151nyeit, bele\u00e9rtve a sz\u00e9les s\u00e1vsz\u00e9less\u00e9get, a nagy elektromos \u00e1t\u00fct\u00e9si mez\u0151t \u00e9s a kiv\u00e1l\u00f3 h\u0151vezet\u0151 k\u00e9pess\u00e9get, az eszk\u00f6zgy\u00e1rt\u00e1shoz szabott, pontosan szab\u00e1lyozott epitaxi\u00e1lis r\u00e9tegekkel. Ezeket az osty\u00e1kat sz\u00e9les k\u00f6rben haszn\u00e1lj\u00e1k a k\u00f6vetkez\u0151 gener\u00e1ci\u00f3s MOSFET-ekben, Schottky-di\u00f3d\u00e1kban \u00e9s integr\u00e1lt teljes\u00edtm\u00e9nymodulokban.<\/p>\n

\n

F\u0151bb specifik\u00e1ci\u00f3k<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Param\u00e9ter<\/th>\n\u00c9rt\u00e9k<\/th>\n<\/tr>\n<\/thead>\n
\u00c1tm\u00e9r\u0151<\/td>\n200 \u00b1 0,5 mm<\/td>\n<\/tr>\n
Polytype<\/td>\n4H-SiC<\/td>\n<\/tr>\n
Vezet\u0151k\u00e9pess\u00e9g t\u00edpusa<\/td>\nN-t\u00edpus\u00fa<\/td>\n<\/tr>\n
Vastags\u00e1g<\/td>\n700 \u00b1 50 \u03bcm<\/td>\n<\/tr>\n
Fel\u00fcletkezel\u00e9s<\/td>\nK\u00e9toldalas CMP pol\u00edrozott<\/td>\n<\/tr>\n
Orient\u00e1ci\u00f3<\/td>\n4.0\u00b0 tengelyen k\u00edv\u00fcl \u00b10.5\u00b0<\/td>\n<\/tr>\n
Notch<\/td>\nSzabv\u00e1nyos rov\u00e1tkol\u00e1s orient\u00e1ci\u00f3<\/td>\n<\/tr>\n
Edge profil<\/td>\nLefut\u00e1s \/ lekerek\u00edtett \u00e9l<\/td>\n<\/tr>\n
Fel\u00fcleti \u00e9rdess\u00e9g<\/td>\nSzub-nanom\u00e9teres szint<\/td>\n<\/tr>\n
Csomagol\u00e1s<\/td>\nKazetta vagy egy osty\u00e1t tartalmaz\u00f3 tart\u00e1ly<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Tipikus fajlagos ellen\u00e1ll\u00e1s:<\/p>\n

    \n
  • N-t\u00edpus\u00fa: 0,015-0,028 \u03a9-cm<\/li>\n
  • F\u00e9lszigetel\u0151: \u22651E7 \u03a9-cm<\/li>\n<\/ul>\n

    El\u00e9rhet\u0151 oszt\u00e1lyok:<\/p>\n

      \n
    • Nulla MPD fokozat<\/li>\n
    • Gy\u00e1rt\u00e1si fokozat<\/li>\n
    • Kutat\u00e1si fokozat<\/li>\n
    • Dummy fokozat<\/li>\n<\/ul>\n

      \"8Epitaxi\u00e1lis r\u00e9teg k\u00e9pess\u00e9gek<\/h2>\n

      Az epitaxi\u00e1lis r\u00e9teg n\u00f6veszt\u00e9se fejlett k\u00e9miai g\u0151zf\u00e1zis\u00fa lev\u00e1laszt\u00e1si (CVD) technol\u00f3gi\u00e1val t\u00f6rt\u00e9nik, amely lehet\u0151v\u00e9 teszi a vastags\u00e1g, az adal\u00e9kkoncentr\u00e1ci\u00f3 \u00e9s az egyenletess\u00e9g pontos szab\u00e1lyoz\u00e1s\u00e1t.<\/p>\n

      A rendelkez\u00e9sre \u00e1ll\u00f3 testreszab\u00e1si lehet\u0151s\u00e9gek k\u00f6z\u00e9 tartozik:<\/p>\n

        \n
      • N-t\u00edpus\u00fa vagy P-t\u00edpus\u00fa epitaxi\u00e1lis r\u00e9tegek<\/li>\n
      • \u00c1ll\u00edthat\u00f3 epi vastags\u00e1g a k\u00fcl\u00f6nb\u00f6z\u0151 eszk\u00f6zszerkezetekhez<\/li>\n
      • Egyenletes adal\u00e9kol\u00e1si profilok a teljes osty\u00e1n<\/li>\n
      • Alacsony hibas\u0171r\u0171s\u00e9g a magas eszk\u00f6zhozam\u00e9rt<\/li>\n<\/ul>\n

        A kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 epitaktika elengedhetetlen a stabil elektromos teljes\u00edtm\u00e9ny \u00e9s a hossz\u00fa t\u00e1v\u00fa megb\u00edzhat\u00f3s\u00e1g el\u00e9r\u00e9s\u00e9hez a t\u00e1pegys\u00e9gekben.<\/p>\n

        \"8Gy\u00e1rt\u00e1si folyamat<\/h2>\n

        Szubsztr\u00e1t el\u0151k\u00e9sz\u00edt\u00e9s<\/strong>
        A nagy tisztas\u00e1g\u00fa monokrist\u00e1lyos SiC szubsztr\u00e1tokat magas h\u0151m\u00e9rs\u00e9klet\u0171 n\u00f6veked\u00e9si m\u00f3dszerekkel \u00e1ll\u00edtj\u00e1k el\u0151, \u00e9s pol\u00edroz\u00e1ssal \u00e9rik el az ultraalacsony fel\u00fcleti \u00e9rdess\u00e9get.<\/p>\n

        Epitaxi\u00e1lis n\u00f6veked\u00e9s<\/strong>
        Az epitaxiar\u00e9teget magas h\u0151m\u00e9rs\u00e9kleten, CVD-rendszerek seg\u00edts\u00e9g\u00e9vel helyezik le, ami biztos\u00edtja az egyenletes vastags\u00e1got \u00e9s az egyenletes anyagtulajdons\u00e1gokat a 200 mm-es osty\u00e1n.<\/p>\n

        Doppingellen\u0151rz\u00e9s<\/strong>
        Az epitaxi\u00e1lis n\u00f6veszt\u00e9s sor\u00e1n pontos adal\u00e9kol\u00e1st alkalmaznak a k\u00fcl\u00f6nb\u00f6z\u0151 eszk\u00f6zarchitekt\u00far\u00e1k k\u00f6vetelm\u00e9nyeinek val\u00f3 megfelel\u00e9s \u00e9rdek\u00e9ben.<\/p>\n

        M\u00e9r\u00e9stechnika \u00e9s ellen\u0151rz\u00e9s<\/strong>
        Az egyenletes min\u0151s\u00e9g biztos\u00edt\u00e1sa \u00e9rdek\u00e9ben minden egyes osty\u00e1t \u00e1tfog\u00f3 vizsg\u00e1latoknak vetnek al\u00e1, bele\u00e9rtve a fel\u00fcletelemz\u00e9st, a hib\u00e1k felt\u00e9rk\u00e9pez\u00e9s\u00e9t \u00e9s az elektromos jellemz\u00e9st.<\/p>\n

        El\u0151ny\u00f6k<\/h2>\n

        Sk\u00e1l\u00e1zhat\u00f3 gy\u00e1rt\u00e1s<\/strong>
        A 8 h\u00fcvelykes ostyam\u00e9ret jelent\u0151sen n\u00f6veli az egy osty\u00e1ra jut\u00f3 chipkibocs\u00e1t\u00e1st, jav\u00edtja a gy\u00e1rt\u00e1s hat\u00e9konys\u00e1g\u00e1t \u00e9s cs\u00f6kkenti az egy eszk\u00f6zre jut\u00f3 k\u00f6lts\u00e9geket.<\/p>\n

        Nagy hat\u00e9konys\u00e1g\u00fa teljes\u00edtm\u00e9ny<\/strong>
        A SiC anyagtulajdons\u00e1gai alacsonyabb kapcsol\u00e1si vesztes\u00e9geket, nagyobb teljes\u00edtm\u00e9nys\u0171r\u0171s\u00e9get \u00e9s jobb energiahat\u00e9konys\u00e1got tesznek lehet\u0151v\u00e9.<\/p>\n

        Kiv\u00e1l\u00f3 h\u0151kezel\u00e9s<\/strong>
        A nagy h\u0151vezet\u0151 k\u00e9pess\u00e9g t\u00e1mogatja a stabil m\u0171k\u00f6d\u00e9st nagy teljes\u00edtm\u00e9ny mellett, \u00e9s cs\u00f6kkenti a h\u0171t\u00e9si ig\u00e9nyeket.<\/p>\n

        Alacsony hibas\u0171r\u0171s\u00e9g<\/strong>
        A fejlett krist\u00e1lyn\u00f6veszt\u00e9si \u00e9s epitaxi\u00e1lis elj\u00e1r\u00e1sok biztos\u00edtj\u00e1k a nagy hozamot \u00e9s a megb\u00edzhat\u00f3 eszk\u00f6zteljes\u00edtm\u00e9nyt.<\/p>\n

        J\u00f6v\u0151re k\u00e9sz platform<\/strong>
        A 8 h\u00fcvelykes SiC osty\u00e1k megfelelnek a f\u00e9lvezet\u0151iparban a nagyobb ostyaform\u00e1tumok \u00e9s az automatiz\u00e1lt t\u00f6meggy\u00e1rt\u00e1s fel\u00e9 mutat\u00f3 trendnek.<\/p>\n

        \"\"<\/p>\n

        Alkalmaz\u00e1sok<\/h2>\n

        Elektromos j\u00e1rm\u0171vek<\/strong>
        Vontat\u00e1si inverterekben, fed\u00e9lzeti t\u00f6lt\u0151kben \u00e9s DC-DC \u00e1talak\u00edt\u00f3kban haszn\u00e1latos. A nagyobb ostyam\u00e9ret t\u00e1mogatja az EV-platformok nagy hat\u00e9konys\u00e1g\u00fa t\u00e1pegys\u00e9geinek t\u00f6meggy\u00e1rt\u00e1s\u00e1t.<\/p>\n

        Meg\u00fajul\u00f3 energiarendszerek<\/strong>
        Napelemes inverterekben \u00e9s sz\u00e9ler\u0151m\u0171vi \u00e1talak\u00edt\u00f3kban alkalmazz\u00e1k, ahol a hat\u00e9konys\u00e1g \u00e9s a megb\u00edzhat\u00f3s\u00e1g kritikus fontoss\u00e1g\u00fa a hossz\u00fa t\u00e1v\u00fa m\u0171k\u00f6d\u00e9shez.<\/p>\n

        Ipari teljes\u00edtm\u00e9nyelektronika<\/strong>
        T\u00e1mogatja a stabil \u00e9s hat\u00e9kony energia\u00e1talak\u00edt\u00e1st ig\u00e9nyl\u0151 motorhajt\u00e1sokat, automatiz\u00e1l\u00e1si rendszereket \u00e9s nagy teljes\u00edtm\u00e9ny\u0171 berendez\u00e9seket.<\/p>\n

        5G \u00e9s RF infrastrukt\u00fara<\/strong>
        Lehet\u0151v\u00e9 teszi a kommunik\u00e1ci\u00f3s rendszerekben \u00e9s b\u00e1zis\u00e1llom\u00e1sokon haszn\u00e1lt nagyfrekvenci\u00e1s \u00e9s nagy teljes\u00edtm\u00e9ny\u0171 RF-\u00f6sszetev\u0151ket.<\/p>\n

        Fogyaszt\u00f3i teljes\u00edtm\u00e9nyelektronika<\/strong>
        Kompakt, nagy hat\u00e9konys\u00e1g\u00fa t\u00e1pegys\u00e9gekben \u00e9s gyorst\u00f6lt\u0151 rendszerekben haszn\u00e1latos.<\/p>\n

        GYIK<\/h2>\n

        1. k\u00e9rd\u00e9s: Mi a 8 h\u00fcvelykes SiC osty\u00e1k f\u0151 el\u0151nye?
        A nagyobb ostyam\u00e9ret n\u00f6veli az egy osty\u00e1ra jut\u00f3 chipek sz\u00e1m\u00e1t, ami jelent\u0151sen cs\u00f6kkenti az egy eszk\u00f6zre jut\u00f3 gy\u00e1rt\u00e1si k\u00f6lts\u00e9geket \u00e9s jav\u00edtja a gy\u00e1rt\u00e1s hat\u00e9konys\u00e1g\u00e1t.<\/p>\n

        2. k\u00e9rd\u00e9s: Kiforrott a 8 h\u00fcvelykes SiC technol\u00f3gia?
        Jelenleg a k\u00eds\u00e9rleti gy\u00e1rt\u00e1sb\u00f3l a korai szakaszban l\u00e9v\u0151 t\u00f6meggy\u00e1rt\u00e1sba l\u00e9p \u00e1t, \u00e9s egyre nagyobb m\u00e9rt\u00e9kben alkalmazz\u00e1k a fejlett f\u00e9lvezet\u0151gy\u00e1rt\u00e1sban.<\/p>\n

        3. k\u00e9rd\u00e9s: Az epitaxi\u00e1lis r\u00e9tegek testre szabhat\u00f3k?
        Igen, az adal\u00e9kol\u00e1s t\u00edpusa, a vastags\u00e1g \u00e9s az elektromos tulajdons\u00e1gok testre szabhat\u00f3k, hogy megfeleljenek az adott eszk\u00f6z k\u00f6vetelm\u00e9nyeinek.<\/p>\n

        4. k\u00e9rd\u00e9s: A megl\u00e9v\u0151 gy\u00e1rt\u00f3sorok kompatibilisek a 8 h\u00fcvelykes osty\u00e1kkal?
        N\u00e9h\u00e1ny berendez\u00e9s korszer\u0171s\u00edt\u00e9s\u00e9re lehet sz\u00fcks\u00e9g, de sok modern gy\u00e1r m\u00e1r k\u00e9sz\u00fcl a 200 mm-es SiC-feldolgoz\u00e1sra.<\/p>","protected":false},"excerpt":{"rendered":"

        A 8 h\u00fcvelykes SiC epitaxi\u00e1lis ostya a sz\u00e9les s\u00e1vsz\u00e9less\u00e9g\u0171 f\u00e9lvezet\u0151 technol\u00f3gia leg\u00fajabb fejleszt\u00e9s\u00e9t jelenti. A 200 mm-es SiC szubsztr\u00e1tra \u00e9p\u00fcl\u0151, kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 epitaxi\u00e1lis r\u00e9teggel ell\u00e1tott term\u00e9ket \u00fagy tervezt\u00e9k, hogy t\u00e1mogassa a sk\u00e1l\u00e1zhat\u00f3, nagy hat\u00e9konys\u00e1g\u00fa teljes\u00edtm\u00e9ny\u0171 eszk\u00f6z\u00f6k gy\u00e1rt\u00e1s\u00e1t.<\/p>","protected":false},"featured_media":2184,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}}},"product_brand":[],"product_cat":[729],"product_tag":[944,735,947,945,943,933,946,948,692],"class_list":{"0":"post-2183","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-wafer","7":"product_tag-200mm-silicon-carbide-wafer","8":"product_tag-8-inch-sic-wafer","9":"product_tag-high-efficiency-power-electronics","10":"product_tag-sic-epi-wafer","11":"product_tag-sic-epitaxial-wafer","12":"product_tag-sic-mosfet-wafer","13":"product_tag-sic-power-device-substrate","14":"product_tag-silicon-carbide-epitaxy","15":"product_tag-wide-bandgap-semiconductor","16":"desktop-align-left","17":"tablet-align-left","18":"mobile-align-left","19":"ast-product-gallery-layout-horizontal-slider","20":"ast-product-tabs-layout-horizontal","22":"first","23":"instock","24":"shipping-taxable","25":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/hu\/wp-json\/wp\/v2\/product\/2183","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/hu\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/hu\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/hu\/wp-json\/wp\/v2\/comments?post=2183"}],"version-history":[{"count":1,"href":"https:\/\/www.zmsh-semitech.com\/hu\/wp-json\/wp\/v2\/product\/2183\/revisions"}],"predecessor-version":[{"id":2188,"href":"https:\/\/www.zmsh-semitech.com\/hu\/wp-json\/wp\/v2\/product\/2183\/revisions\/2188"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/hu\/wp-json\/wp\/v2\/media\/2184"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/hu\/wp-json\/wp\/v2\/media?parent=2183"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/hu\/wp-json\/wp\/v2\/product_brand?post=2183"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/hu\/wp-json\/wp\/v2\/product_cat?post=2183"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/hu\/wp-json\/wp\/v2\/product_tag?post=2183"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}