{"id":2173,"date":"2026-04-14T03:08:56","date_gmt":"2026-04-14T03:08:56","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2173"},"modified":"2026-04-14T03:08:59","modified_gmt":"2026-04-14T03:08:59","slug":"4-inch-100mm-hpsi-silicon-carbide-wafer","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/hu\/product\/4-inch-100mm-hpsi-silicon-carbide-wafer\/","title":{"rendered":"4 h\u00fcvelykes 100 mm-es HPSI szil\u00edcium-karbid ostya"},"content":{"rendered":"

\"4A 4 h\u00fcvelykes HPSI szil\u00edciumkarbid ostya egy nagy tisztas\u00e1g\u00fa, f\u00e9lig szigetel\u0151 szubsztr\u00e1t, amelyet fejlett RF, mikrohull\u00e1m\u00fa \u00e9s optoelektronikai alkalmaz\u00e1sokhoz terveztek. A HPSI a nagy tisztas\u00e1g\u00fa f\u00e9lszigetel\u0151 anyagra utal, amelyet rendk\u00edv\u00fcl magas fajlagos ellen\u00e1ll\u00e1s \u00e9s kiv\u00e1l\u00f3 elektromos szigetel\u00e9s jellemez.<\/p>\n

A szil\u00edciumkarbid egy sz\u00e9les s\u00e1vsz\u00e9less\u00e9g\u0171 f\u00e9lvezet\u0151, amely szil\u00edciumb\u00f3l \u00e9s sz\u00e9nb\u0151l \u00e1ll. A hagyom\u00e1nyos szil\u00edciumlapk\u00e1kkal \u00f6sszehasonl\u00edtva kiv\u00e1l\u00f3 h\u0151vezet\u0151 k\u00e9pess\u00e9get, nagyobb \u00e1t\u00fct\u00e9si elektromos mez\u0151t \u00e9s jobb teljes\u00edtm\u00e9nyt ny\u00fajt sz\u00e9ls\u0151s\u00e9ges \u00fczemi k\u00f6r\u00fclm\u00e9nyek k\u00f6z\u00f6tt. F\u00e9lszigetelt form\u00e1ban a SiC jelent\u0151sen cs\u00f6kkenti a parazita vezet\u00e9st, \u00edgy ide\u00e1lis platform a nagyfrekvenci\u00e1s \u00e9s nagy teljes\u00edtm\u00e9ny\u0171 elektronikus eszk\u00f6z\u00f6k sz\u00e1m\u00e1ra.<\/p>\n

Ezt a 4 h\u00fcvelykes ostyaform\u00e1tumot sz\u00e9les k\u00f6rben haszn\u00e1lj\u00e1k mind a kutat\u00e1sban, mind az ipari gy\u00e1rt\u00e1sban a k\u00f6lts\u00e9gek, az \u00e9retts\u00e9g \u00e9s a folyamatokkal val\u00f3 kompatibilit\u00e1s egyens\u00falya miatt. K\u00fcl\u00f6n\u00f6sen alkalmas RF-eszk\u00f6z\u00f6k, 5G kommunik\u00e1ci\u00f3s rendszerek, radarmodulok \u00e9s felt\u00f6rekv\u0151 optikai technol\u00f3gi\u00e1k, p\u00e9ld\u00e1ul AR hull\u00e1mvezet\u0151 alkatr\u00e9szek sz\u00e1m\u00e1ra.<\/p>\n

M\u0171szaki adatok<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Param\u00e9ter<\/th>\n\u00c9rt\u00e9k<\/th>\n<\/tr>\n<\/thead>\n
\u00c1tm\u00e9r\u0151<\/td>\n100 \u00b1 0,5 mm<\/td>\n<\/tr>\n
Vastags\u00e1g<\/td>\n350 \u03bcm<\/td>\n<\/tr>\n
Anyag<\/td>\nSiC egykrist\u00e1ly<\/td>\n<\/tr>\n
T\u00edpus<\/td>\nHPSI (f\u00e9lig szigetel\u0151)<\/td>\n<\/tr>\n
Ellen\u00e1ll\u00e1s<\/td>\n\u22651E5 \u00e9s \u22651E10 ohm-cm k\u00f6z\u00f6tt<\/td>\n<\/tr>\n
Fel\u00fcleti \u00e9rdess\u00e9g<\/td>\nCMP Ra \u2264 0,2 nm<\/td>\n<\/tr>\n
TTV<\/td>\n\u2264 10 \u03bcm<\/td>\n<\/tr>\n
Warp<\/td>\n\u2264 30 \u03bcm<\/td>\n<\/tr>\n
Orient\u00e1ci\u00f3<\/td>\nTengelyen bel\u00fcli vagy tengelyen k\u00edv\u00fcli be\u00e1ll\u00edt\u00e1sok<\/td>\n<\/tr>\n
Edge<\/td>\nSzabv\u00e1nyos SEMI ferde<\/td>\n<\/tr>\n
Fokozat<\/td>\nGy\u00e1rt\u00e1s \/ Kutat\u00e1s \/ Dummy<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Ezek a param\u00e9terek biztos\u00edtj\u00e1k a magas fel\u00fcleti min\u0151s\u00e9get, az alacsony hibas\u0171r\u0171s\u00e9get \u00e9s a stabil mechanikai tulajdons\u00e1gokat, amelyek az epitaxi\u00e1lis n\u00f6veked\u00e9shez \u00e9s a prec\u00edzi\u00f3s eszk\u00f6zgy\u00e1rt\u00e1shoz sz\u00fcks\u00e9gesek.<\/p>\n

Anyagi jellemz\u0151k\"\"<\/h2>\n

A szil\u00edcium-karbid az egyik legfontosabb harmadik gener\u00e1ci\u00f3s f\u00e9lvezet\u0151 anyag. Sz\u00e9les s\u00e1vsz\u00e9less\u00e9ge lehet\u0151v\u00e9 teszi, hogy az eszk\u00f6z\u00f6k a szil\u00edciumhoz k\u00e9pest alacsonyabb sziv\u00e1rg\u00e1si \u00e1rammal, magasabb fesz\u00fclts\u00e9gen m\u0171k\u00f6djenek.<\/p>\n

A HPSI osty\u00e1k eset\u00e9ben a meghat\u00e1roz\u00f3 jellemz\u0151 a rendk\u00edv\u00fcl magas fajlagos ellen\u00e1ll\u00e1s. Ez a tulajdons\u00e1g minimaliz\u00e1lja a szubsztr\u00e1tumon bel\u00fcli nem k\u00edv\u00e1nt \u00e1ram\u00e1raml\u00e1st, ami kritikus fontoss\u00e1g\u00fa a jelintegrit\u00e1s fenntart\u00e1s\u00e1hoz az RF \u00e9s mikrohull\u00e1m\u00fa alkalmaz\u00e1sokban.<\/p>\n

A h\u0151vezet\u0151 k\u00e9pess\u00e9g l\u00e9nyegesen nagyobb, mint a hagyom\u00e1nyos f\u00e9lvezet\u0151 anyagok\u00e9, ami hat\u00e9kony h\u0151elvezet\u00e9st tesz lehet\u0151v\u00e9 nagy teljes\u00edtm\u00e9ny\u0171 m\u0171k\u00f6d\u00e9s k\u00f6zben. Ez cs\u00f6kkenti a h\u0151terhel\u00e9st \u00e9s jav\u00edtja a hossz\u00fa t\u00e1v\u00fa megb\u00edzhat\u00f3s\u00e1got.<\/p>\n

A SiC emellett magas elektromos \u00e1t\u00fct\u00e9si t\u00e9rrel rendelkezik, ami lehet\u0151v\u00e9 teszi, hogy az eszk\u00f6z\u00f6k nagy fesz\u00fclts\u00e9get kezeljenek an\u00e9lk\u00fcl, hogy a m\u00e9ret\u00fck n\u00f6vekedne. Ezenk\u00edv\u00fcl az anyag stabil teljes\u00edtm\u00e9nyt ny\u00fajt magas h\u0151m\u00e9rs\u00e9kleten, magas frekvenci\u00e1n \u00e9s sug\u00e1rz\u00e1snak val\u00f3 kitetts\u00e9g mellett is, \u00edgy alkalmas ig\u00e9nyes k\u00f6rnyezetekben is.<\/p>\n

Alkalmaz\u00e1sok<\/h2>\n

RF \u00e9s mikrohull\u00e1m\u00fa eszk\u00f6z\u00f6k<\/strong>
A HPSI szil\u00edcium-karbid osty\u00e1kat sz\u00e9les k\u00f6rben haszn\u00e1lj\u00e1k RF er\u0151s\u00edt\u0151k \u00e9s nagyfrekvenci\u00e1s \u00e1ramk\u00f6r\u00f6k hordoz\u00f3anyagak\u00e9nt. Nagy fajlagos ellen\u00e1ll\u00e1suk cs\u00f6kkenti a parazita vesztes\u00e9geket \u00e9s jav\u00edtja a jel\u00e1tvitel hat\u00e9konys\u00e1g\u00e1t, ami n\u00e9lk\u00fcl\u00f6zhetetlenn\u00e9 teszi \u0151ket a fejlett kommunik\u00e1ci\u00f3s elektronik\u00e1ban.<\/p>\n

5G kommunik\u00e1ci\u00f3s infrastrukt\u00fara<\/strong>
Az 5G rendszerekben az eszk\u00f6z\u00f6k magasabb frekvenci\u00e1n m\u0171k\u00f6dnek, \u00e9s kiv\u00e1l\u00f3 elektromos szigetel\u00e9s\u0171 anyagokat ig\u00e9nyelnek. A HPSI SiC osty\u00e1k t\u00e1mogatj\u00e1k a stabil teljes\u00edtm\u00e9nyt a b\u00e1zis\u00e1llom\u00e1sokban \u00e9s a vezet\u00e9k n\u00e9lk\u00fcli modulokban, lehet\u0151v\u00e9 t\u00e9ve a nagyobb adat\u00e1tviteli hat\u00e9konys\u00e1got \u00e9s a cs\u00f6kkentett energiavesztes\u00e9get.<\/p>\n

AR szem\u00fcvegek \u00e9s optikai rendszerek<\/strong>
A kiterjesztett val\u00f3s\u00e1g eszk\u00f6zeiben a SiC-lapk\u00e1kat optikai \u00e9s hull\u00e1mvezet\u0151vel kapcsolatos alkatr\u00e9szekben haszn\u00e1lj\u00e1k. Szerkezeti stabilit\u00e1suk \u00e9s a prec\u00edzi\u00f3s feldolgoz\u00e1si technol\u00f3gi\u00e1kkal val\u00f3 kompatibilit\u00e1suk t\u00e1mogatja a kompakt \u00e9s nagy teljes\u00edtm\u00e9ny\u0171 optikai rendszerek fejleszt\u00e9s\u00e9t.<\/p>\n

Radar \u00e9s v\u00e9delmi rendszerek<\/strong>
A HPSI SiC szubsztr\u00e1tumok alkalmasak a nagy teljes\u00edtm\u00e9nyt, nagy frekvenci\u00e1t \u00e9s megb\u00edzhat\u00f3s\u00e1got ig\u00e9nyl\u0151 radar- \u00e9s v\u00e9delmi elektronik\u00e1hoz. Sz\u00e9ls\u0151s\u00e9ges k\u00f6rnyezeti k\u00f6r\u00fclm\u00e9nyek k\u00f6z\u00f6tt is stabilan m\u0171k\u00f6dnek, bele\u00e9rtve a magas h\u0151m\u00e9rs\u00e9kletet \u00e9s a sug\u00e1rz\u00e1st.<\/p>\n

Optoelektronikai eszk\u00f6z\u00f6k<\/strong>
Ezeket az osty\u00e1kat optoelektronikai \u00e9s fotonikai eszk\u00f6z\u00f6kben is haszn\u00e1lj\u00e1k, ahol az elektromos szigetel\u00e9s \u00e9s a termikus teljes\u00edtm\u00e9ny kritikus az eszk\u00f6z hat\u00e9konys\u00e1ga \u00e9s stabilit\u00e1sa szempontj\u00e1b\u00f3l.<\/p>\n

\"\"<\/p>\n

El\u00e9rhet\u0151 fokozatok<\/h2>\n

Gy\u00e1rt\u00e1si fokozat
Szigor\u00fa min\u0151s\u00e9gellen\u0151rz\u00e9ssel \u00e9s alacsony hibas\u0171r\u0171s\u00e9ggel rendelkez\u0151 kereskedelmi eszk\u00f6z\u00f6k gy\u00e1rt\u00e1s\u00e1hoz haszn\u00e1lj\u00e1k.<\/p>\n

Kutat\u00e1si fokozat
Alkalmas laborat\u00f3riumi fejleszt\u00e9sre, tesztel\u00e9sre \u00e9s folyamatoptimaliz\u00e1l\u00e1sra.<\/p>\n

Dummy fokozat
Alkalmazva a berendez\u00e9sek kalibr\u00e1l\u00e1s\u00e1ban, folyamatvizsg\u00e1latban \u00e9s nem funkcion\u00e1lis haszn\u00e1latban.<\/p>\n

Si vs SiC \u00f6sszehasonl\u00edt\u00e1s<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n
Ingatlan<\/th>\nSzil\u00edcium<\/th>\nSzil\u00edcium-karbid<\/th>\n<\/tr>\n<\/thead>\n
Bandgap<\/td>\n1,12 eV<\/td>\n~3,26 eV<\/td>\n<\/tr>\n
Ellen\u00e1ll\u00e1s<\/td>\nAlacsony<\/td>\nNagyon magas (HPSI)<\/td>\n<\/tr>\n
H\u0151vezet\u0151 k\u00e9pess\u00e9g<\/td>\nM\u00e9rs\u00e9kelt<\/td>\nMagas<\/td>\n<\/tr>\n
Frekvenciak\u00e9pess\u00e9g<\/td>\nKorl\u00e1tozott<\/td>\nKiv\u00e1l\u00f3<\/td>\n<\/tr>\n
Alkalmaz\u00e1s f\u00f3kusz<\/td>\nLogika \u00e9s IC<\/td>\nRF \u00e9s nagyfrekvenci\u00e1s<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

A hagyom\u00e1nyos elektronik\u00e1ban tov\u00e1bbra is a szil\u00edcium domin\u00e1l, m\u00edg a nagyfrekvenci\u00e1s \u00e9s nagy teljes\u00edtm\u00e9ny\u0171 rendszerekben egyre ink\u00e1bb a szil\u00edcium-karbidot haszn\u00e1lj\u00e1k.<\/p>\n

GYIK<\/h2>\n

K: Mi az a HPSI szil\u00edcium-karbid ostya?
A HPSI ostya egy nagy tisztas\u00e1g\u00fa, f\u00e9lig szigetel\u0151 szil\u00edciumkarbid szubsztr\u00e1t, nagyon nagy elektromos ellen\u00e1ll\u00e1ssal, amelyet RF, mikrohull\u00e1m\u00fa \u00e9s optoelektronikai alkalmaz\u00e1sokhoz terveztek.<\/p>\n

K: Mi\u00e9rt fontos a nagy ellen\u00e1ll\u00e1s?
A nagy ellen\u00e1ll\u00e1s cs\u00f6kkenti a parazita vezet\u00e9st \u00e9s a jelinterferenci\u00e1t, ami kritikus fontoss\u00e1g\u00fa a nagyfrekvenci\u00e1s eszk\u00f6z\u00f6k hat\u00e9konys\u00e1g\u00e1nak \u00e9s jelintegrit\u00e1s\u00e1nak fenntart\u00e1s\u00e1hoz.<\/p>\n

K: Alkalmas-e a szil\u00edcium-karbid optikai alkalmaz\u00e1sokhoz?
Igen, a szil\u00edcium-karbid bizonyos optikai \u00e9s fotonikai alkalmaz\u00e1sokban haszn\u00e1lhat\u00f3, mivel h\u0151stabil \u00e9s kompatibilis a fejlett gy\u00e1rt\u00e1si elj\u00e1r\u00e1sokkal.<\/p>","protected":false},"excerpt":{"rendered":"

A 4 h\u00fcvelykes HPSI szil\u00edciumkarbid ostya a nagyfrekvenci\u00e1s \u00e9s a k\u00f6vetkez\u0151 gener\u00e1ci\u00f3s elektronikus rendszerek kulcsfontoss\u00e1g\u00fa anyaga. A nagy ellen\u00e1ll\u00e1s, a termikus teljes\u00edtm\u00e9ny \u00e9s a szerkezeti stabilit\u00e1s kombin\u00e1ci\u00f3ja ide\u00e1lis v\u00e1laszt\u00e1ss\u00e1 teszi az RF-eszk\u00f6z\u00f6k, a kommunik\u00e1ci\u00f3s infrastrukt\u00fara \u00e9s a felt\u00f6rekv\u0151 optikai technol\u00f3gi\u00e1k sz\u00e1m\u00e1ra. A nagy hat\u00e9konys\u00e1g\u00fa \u00e9s nagyfrekvenci\u00e1s rendszerek ir\u00e1nti kereslet folyamatos n\u00f6veked\u00e9s\u00e9vel a HPSI SiC szubsztr\u00e1tumok egyre fontosabb\u00e1 v\u00e1lnak a fejlett f\u00e9lvezet\u0151 alkalmaz\u00e1sokban.<\/p>","protected":false},"featured_media":2174,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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