{"id":2167,"date":"2026-04-14T02:28:42","date_gmt":"2026-04-14T02:28:42","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2167"},"modified":"2026-04-14T02:28:45","modified_gmt":"2026-04-14T02:28:45","slug":"4-inch-4h-n-silicon-carbide-wafer","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/hu\/product\/4-inch-4h-n-silicon-carbide-wafer\/","title":{"rendered":"4 h\u00fcvelykes 100 mm-es 4H-N szil\u00edciumkarbid ostya"},"content":{"rendered":"

\"Szil\u00edcium-karbidThe 4 inch 4H-N silicon carbide wafer is a conductive SiC substrate designed for advanced power semiconductor applications. It is based on the 4H crystal polytype, which is widely recognized in the industry for its superior electrical and thermal performance.<\/p>\n

Silicon carbide belongs to the third-generation semiconductor materials and offers significant advantages over traditional silicon. Its wide bandgap, high breakdown electric field, and excellent thermal conductivity make it highly suitable for devices operating under high voltage, high frequency, and high temperature conditions.<\/p>\n

This wafer is commonly used for manufacturing power devices such as MOSFETs, Schottky barrier diodes, JFETs, and IGBTs. These devices are critical components in modern energy systems, where efficiency, reliability, and compact design are essential. The 4 inch format provides a balance between cost efficiency and device yield, making it widely adopted in both research and industrial production environments.<\/p>\n

M\u0171szaki adatok<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Param\u00e9ter<\/th>\n\u00c9rt\u00e9k<\/th>\n<\/tr>\n<\/thead>\n
\u00c1tm\u00e9r\u0151<\/td>\n100 \u00b1 0,5 mm<\/td>\n<\/tr>\n
Vastags\u00e1g<\/td>\n350 \u00b1 25 \u03bcm<\/td>\n<\/tr>\n
Polytype<\/td>\n4H<\/td>\n<\/tr>\n
Vezet\u0151k\u00e9pess\u00e9g t\u00edpusa<\/td>\nN-t\u00edpus\u00fa<\/td>\n<\/tr>\n
Fel\u00fcleti \u00e9rdess\u00e9g<\/td>\nRa \u2264 0.2 nm<\/td>\n<\/tr>\n
TTV<\/td>\n\u2264 10 \u03bcm<\/td>\n<\/tr>\n
Warp<\/td>\n\u2264 30 \u03bcm<\/td>\n<\/tr>\n
Hibas\u0171r\u0171s\u00e9g<\/td>\nMPD < 1 ea\/cm\u00b2<\/td>\n<\/tr>\n
Edge<\/td>\n45\u00b0 bevel, SEMI standard<\/td>\n<\/tr>\n
Fokozat<\/td>\nGy\u00e1rt\u00e1s \/ Kutat\u00e1s \/ Dummy<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

These parameters ensure high surface quality and dimensional stability, which are essential for epitaxial growth and device fabrication processes.<\/p>\n

Anyagi jellemz\u0151k<\/h2>\n

Silicon carbide demonstrates a wide bandgap of approximately 3.26 eV, which allows devices to operate at significantly higher voltages compared to silicon. This results in improved power handling capability and reduced conduction losses.\"\"<\/p>\n

Another important property is its high breakdown electric field, which can be nearly ten times greater than that of silicon. This enables thinner device structures and higher efficiency in power conversion systems.<\/p>\n

Thermal conductivity is also a key advantage. SiC conducts heat about three times more effectively than silicon, allowing devices to maintain stable performance under high load conditions. This reduces the need for complex cooling systems and improves overall system reliability.<\/p>\n

In addition, silicon carbide maintains stable electrical characteristics at temperatures exceeding 600\u00b0C. This makes it particularly suitable for applications in harsh environments such as automotive power systems, industrial drives, and aerospace electronics.<\/p>\n

The material also offers high electron mobility and low on-resistance, contributing to faster switching speeds and reduced energy loss in power devices.<\/p>\n

Available Wafer Sizes<\/h2>\n

Silicon carbide wafers are available in multiple diameters to meet different application needs:<\/p>\n

\n
\n\n\n\n\n\n\n\n\n\n
Size<\/th>\n\u00c1tm\u00e9r\u0151<\/th>\nVastags\u00e1g tartom\u00e1ny<\/th>\n<\/tr>\n<\/thead>\n
2 inch<\/td>\n50.8 mm<\/td>\n330\u2013350 \u03bcm<\/td>\n<\/tr>\n
3 inch<\/td>\n76.2 mm<\/td>\n350\u2013500 \u03bcm<\/td>\n<\/tr>\n
4 h\u00fcvelyk<\/td>\n100 mm<\/td>\n350\u2013500 \u03bcm<\/td>\n<\/tr>\n
6 h\u00fcvelyk<\/td>\n150 mm<\/td>\n350\u2013500 \u03bcm<\/td>\n<\/tr>\n
8 h\u00fcvelyk<\/td>\n200 mm<\/td>\n350\u2013500 \u03bcm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Common types include conductive 4H-N, semi-insulating HPSI, and other specialized variants for RF and power applications.<\/p>\n

Alkalmaz\u00e1sok<\/h2>\n

In electric vehicles, SiC wafers are used in traction inverters, onboard chargers, and DC-DC converters. They improve energy efficiency, reduce heat generation, and enable more compact system designs.\"\"<\/p>\n

In renewable energy systems, SiC devices are applied in solar inverters and wind power converters. Their high efficiency contributes to reduced energy loss and improved system performance.<\/p>\n

Industrial systems also benefit from SiC technology, especially in high-power motor drives and automation equipment where reliability and durability are critical.<\/p>\n

In power grid infrastructure, silicon carbide is used in smart grid systems and high-voltage transmission equipment to enhance energy conversion efficiency and reduce system losses.<\/p>\n

Aerospace and defense applications utilize SiC for high-reliability electronics that must operate under extreme temperature and environmental conditions.<\/p>\n

Si vs SiC \u00f6sszehasonl\u00edt\u00e1s<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n
Ingatlan<\/th>\nSzil\u00edcium<\/th>\nSzil\u00edcium-karbid<\/th>\n<\/tr>\n<\/thead>\n
Bandgap<\/td>\n1,12 eV<\/td>\n3.26 eV<\/td>\n<\/tr>\n
Breakdown Field<\/td>\nAlacsony<\/td>\nMagas<\/td>\n<\/tr>\n
H\u0151vezet\u0151 k\u00e9pess\u00e9g<\/td>\nM\u00e9rs\u00e9kelt<\/td>\nMagas<\/td>\n<\/tr>\n
Max Temperature<\/td>\n~150\u00b0C<\/td>\n>600\u00b0C<\/td>\n<\/tr>\n
Hat\u00e9konys\u00e1g<\/td>\nStandard<\/td>\nMagas<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Silicon remains suitable for low-power and conventional electronics, while silicon carbide is increasingly preferred for high-power, high-efficiency systems.<\/p>\n

GYIK<\/h2>\n

Q: What is the difference between silicon and silicon carbide wafers?<\/strong>
A szil\u00edciumszeleteket sz\u00e9les k\u00f6rben haszn\u00e1lj\u00e1k integr\u00e1lt \u00e1ramk\u00f6r\u00f6kben \u00e9s szabv\u00e1nyos elektronikus eszk\u00f6z\u00f6kben. A szil\u00edcium-karbid osty\u00e1kat a teljes\u00edtm\u00e9nyelektronik\u00e1hoz tervezt\u00e9k, ahol nagy fesz\u00fclts\u00e9gre, magas h\u0151m\u00e9rs\u00e9kletre \u00e9s nagy hat\u00e9konys\u00e1gra van sz\u00fcks\u00e9g.<\/p>\n

K: Hogyan viszonyul a SiC a GaN-hez?<\/strong>
A SiC-t jellemz\u0151en nagyfesz\u00fclts\u00e9g\u0171 \u00e9s nagy teljes\u00edtm\u00e9ny\u0171 alkalmaz\u00e1sokban haszn\u00e1lj\u00e1k, p\u00e9ld\u00e1ul elektromos j\u00e1rm\u0171vekben \u00e9s elektromos h\u00e1l\u00f3zatokban. A GaN alkalmasabb a nagyfrekvenci\u00e1s \u00e9s alacsonyabb fesz\u00fclts\u00e9g\u0171 alkalmaz\u00e1sokhoz, bele\u00e9rtve az RF-rendszereket \u00e9s a gyorst\u00f6lt\u0151 eszk\u00f6z\u00f6ket.<\/p>\n

K: A szil\u00edciumkarbid ker\u00e1mia vagy f\u00e9lvezet\u0151?<\/strong>
A szil\u00edciumkarbid egyszerre ker\u00e1mia \u00e9s f\u00e9lvezet\u0151. A nagy mechanikai szil\u00e1rds\u00e1got kiv\u00e1l\u00f3 elektromos tulajdons\u00e1gokkal \u00f6tv\u00f6zi, ami alkalmass\u00e1 teszi ig\u00e9nyes elektronikai alkalmaz\u00e1sokhoz.<\/p>\n

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The 4 inch 4H-N silicon carbide wafer is a key material for modern power electronics. Its combination of electrical efficiency, thermal performance, and reliability makes it an essential substrate for next-generation devices. As industries continue to demand higher energy efficiency and system performance, SiC wafers are becoming increasingly important in both commercial and industrial applications.<\/p>","protected":false},"featured_media":2168,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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