{"id":1968,"date":"2026-03-23T06:01:20","date_gmt":"2026-03-23T06:01:20","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=1968"},"modified":"2026-03-23T06:03:52","modified_gmt":"2026-03-23T06:03:52","slug":"lpcvd-oxidation-furnace","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/hu\/product\/lpcvd-oxidation-furnace\/","title":{"rendered":"6\/8\/12 h\u00fcvelykes LPCVD oxid\u00e1ci\u00f3s kemence nagy egyenletess\u00e9g\u0171 v\u00e9konyr\u00e9teg-lev\u00e1laszt\u00e1s a fejlett f\u00e9lvezet\u0151gy\u00e1rt\u00e1shoz"},"content":{"rendered":"

A 6\/8\/12 h\u00fcvelykes LPCVD-oxid\u00e1ci\u00f3s kemence a legkorszer\u0171bb f\u00e9lvezet\u0151gy\u00e1rt\u00f3 eszk\u00f6z, amelyet prec\u00edz \u00e9s egyenletes v\u00e9konyr\u00e9teg-lev\u00e1laszt\u00e1sra terveztek. Sz\u00e9les k\u00f6rben alkalmazz\u00e1k a kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 poliszil\u00edcium, szil\u00edcium-nitrid \u00e9s szil\u00edcium-oxid r\u00e9tegek osty\u00e1kon t\u00f6rt\u00e9n\u0151 n\u00f6veszt\u00e9s\u00e9re, biztos\u00edtva az egyenletes teljes\u00edtm\u00e9nyt a teljes\u00edtm\u00e9ny f\u00e9lvezet\u0151k, fejlett szubsztr\u00e1tok \u00e9s m\u00e1s nagy pontoss\u00e1g\u00fa alkalmaz\u00e1sok eset\u00e9ben.<\/p>\n

Ez a berendez\u00e9s a fejlett alacsony nyom\u00e1s\u00fa lev\u00e1laszt\u00e1si technol\u00f3gi\u00e1t, az intelligens h\u0151m\u00e9rs\u00e9klet-szab\u00e1lyoz\u00e1st \u00e9s az ultra-tiszta folyamattervez\u00e9st \u00f6tv\u00f6zi a kiv\u00e9teles v\u00e9konyr\u00e9teg-egyenletess\u00e9g \u00e9s a nagy \u00e1tereszt\u0151k\u00e9pess\u00e9g el\u00e9r\u00e9se \u00e9rdek\u00e9ben. F\u00fcgg\u0151leges reaktorkonfigur\u00e1ci\u00f3ja lehet\u0151v\u00e9 teszi a hat\u00e9kony szakaszos feldolgoz\u00e1st, m\u00edg a termikus lev\u00e1laszt\u00e1si folyamat elker\u00fcli a plazma okozta k\u00e1rosod\u00e1st, \u00edgy ide\u00e1lis az olyan kritikus folyamatokhoz, mint a kapu dielektrikum\u00e1nak kialak\u00edt\u00e1sa, a fesz\u00fclts\u00e9gpuffer r\u00e9tegek \u00e9s a v\u00e9d\u0151oxidok.<\/p>\n

\"\"<\/p>\n

\n

Legfontosabb el\u0151ny\u00f6k<\/strong><\/span><\/h2>\n
    \n
  • Nagy egyenletess\u00e9g\u0171 v\u00e9konyr\u00e9teg-lev\u00e1laszt\u00e1s:<\/strong> Az alacsony nyom\u00e1s\u00fa k\u00f6rnyezet (0,1-10 Torr) \u00b11,5% egyenletess\u00e9get biztos\u00edt a waferek k\u00f6z\u00f6tt \u00e9s a waferen bel\u00fcl, ami kritikus a nagy teljes\u00edtm\u00e9ny\u0171 eszk\u00f6zgy\u00e1rt\u00e1s szempontj\u00e1b\u00f3l.<\/li>\n
  • F\u00fcgg\u0151leges reaktorkialak\u00edt\u00e1s:<\/strong> 150-200 osty\u00e1t kezel t\u00e9telenk\u00e9nt, jav\u00edtva az ipari m\u00e9ret\u0171 f\u00e9lvezet\u0151gy\u00e1rt\u00e1s \u00e1tereszt\u0151k\u00e9pess\u00e9g\u00e9t \u00e9s termel\u00e9si hat\u00e9konys\u00e1g\u00e1t.<\/li>\n
  • Termikus lev\u00e1laszt\u00e1si elj\u00e1r\u00e1s (500-900\u00b0C):<\/strong> K\u00edm\u00e9letes, plazmamentes lev\u00e1laszt\u00e1st biztos\u00edt az \u00e9rz\u00e9keny hordoz\u00f3k v\u00e9delme \u00e9s a magas filmmin\u0151s\u00e9g fenntart\u00e1sa \u00e9rdek\u00e9ben.<\/li>\n
  • Intelligens h\u0151m\u00e9rs\u00e9klet-szab\u00e1lyoz\u00e1s:<\/strong> Val\u00f3s idej\u0171 fel\u00fcgyelet \u00e9s be\u00e1ll\u00edt\u00e1s \u00b11\u00b0C pontoss\u00e1ggal a stabil, megism\u00e9telhet\u0151 eredm\u00e9nyek \u00e9rdek\u00e9ben.<\/li>\n
  • Ultratiszta technol\u00f3giai kamra:<\/strong> Minim\u00e1lisra cs\u00f6kkenti a r\u00e9szecskeszennyez\u0151d\u00e9st, t\u00e1mogatja a SiC \u00e9s m\u00e1s fejlett ostyaanyagokat.<\/li>\n
  • Testreszabhat\u00f3 konfigur\u00e1ci\u00f3:<\/strong> A rugalmas kialak\u00edt\u00e1s k\u00fcl\u00f6nb\u00f6z\u0151 technol\u00f3giai k\u00f6vetelm\u00e9nyekhez igazodik, bele\u00e9rtve a sz\u00e1raz vagy nedves oxid\u00e1ci\u00f3t \u00e9s a k\u00fcl\u00f6nb\u00f6z\u0151 ostyam\u00e9reteket.<\/li>\n<\/ul>\n

    M\u0171szaki specifik\u00e1ci\u00f3k<\/strong><\/span><\/h2>\n
    \n
    \n\n\n\n\n\n\n\n\n\n\n\n\n\n
    Jellemz\u0151<\/th>\nSpecifik\u00e1ci\u00f3<\/th>\n<\/tr>\n<\/thead>\n
    Wafer m\u00e9ret<\/td>\n6\/8\/12 h\u00fcvelyk<\/td>\n<\/tr>\n
    Kompatibilis anyagok<\/td>\nPoliszil\u00edcium, szil\u00edcium-nitrid, szil\u00edcium-oxid<\/td>\n<\/tr>\n
    Oxid\u00e1ci\u00f3s t\u00edpus<\/td>\nSz\u00e1raz oxig\u00e9n \/ nedves oxig\u00e9n (DCE, HCL)<\/td>\n<\/tr>\n
    Folyamath\u0151m\u00e9rs\u00e9klet-tartom\u00e1ny<\/td>\n500\u00b0C-900\u00b0C<\/td>\n<\/tr>\n
    \u00c1lland\u00f3 h\u0151m\u00e9rs\u00e9klet\u0171 z\u00f3na<\/td>\n\u2265800 mm<\/td>\n<\/tr>\n
    H\u0151m\u00e9rs\u00e9klet-szab\u00e1lyoz\u00e1s pontoss\u00e1ga<\/td>\n\u00b11\u00b0C<\/td>\n<\/tr>\n
    R\u00e9szecsk\u00e9k ellen\u0151rz\u00e9se<\/td>\n0,32\u03bcm), 0,32\u03bcm), 0,226\u03bcm)<\/td>\n<\/tr>\n
    Filmvastags\u00e1g<\/td>\nNIT1500 \u00b150 \u00c5<\/td>\n<\/tr>\n
    Egyenletess\u00e9g<\/td>\nWaferen bel\u00fcl <2.5%, waferr\u0151l waferre <2.5%, t\u00e9telr\u0151l t\u00e9telre <2%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

    A term\u00e9k jellemz\u0151i<\/strong><\/span><\/h2>\n
      \n
    • Az automatiz\u00e1lt ostyakezel\u00e9s nagyfok\u00fa biztons\u00e1got \u00e9s m\u0171k\u00f6d\u00e9si hat\u00e9konys\u00e1got biztos\u00edt.<\/li>\n
    • Az ultra-tiszta technol\u00f3giai kamra cs\u00f6kkenti a szennyez\u0151d\u00e9s kock\u00e1zat\u00e1t \u00e9s fenntartja a film egyenletes min\u0151s\u00e9g\u00e9t.<\/li>\n
    • A kiv\u00e1l\u00f3 filmvastags\u00e1g egyenletess\u00e9ge t\u00e1mogatja a fejlett csom\u00f3pontgy\u00e1rt\u00e1st.<\/li>\n
    • A val\u00f3s idej\u0171 intelligens h\u0151m\u00e9rs\u00e9klet- \u00e9s nyom\u00e1sszab\u00e1lyoz\u00e1s lehet\u0151v\u00e9 teszi a folyamat pontos be\u00e1ll\u00edt\u00e1s\u00e1t.<\/li>\n
    • A SiC ostyatart\u00f3 cs\u00f6kkenti a s\u00farl\u00f3d\u00e1st \u00e9s a r\u00e9szecskek\u00e9pz\u0151d\u00e9st, meghosszabb\u00edtva ezzel az ostya \u00e9lettartam\u00e1t.<\/li>\n
    • A modul\u00e1ris fel\u00e9p\u00edt\u00e9s lehet\u0151v\u00e9 teszi a k\u00fcl\u00f6nb\u00f6z\u0151 alkalmaz\u00e1sokhoz \u00e9s folyamatig\u00e9nyekhez val\u00f3 testreszab\u00e1st.<\/li>\n<\/ul>\n

      A lerak\u00e1si folyamat elve\"\"<\/strong><\/span><\/h2>\n
        \n
      1. G\u00e1z Bevezet\u00e9s:<\/strong> A reakci\u00f3k\u00e9pes g\u00e1zokat alacsony nyom\u00e1son (0,25-1 Torr) vezetik a cs\u0151be.<\/li>\n
      2. Fel\u00fcleti diff\u00fazi\u00f3:<\/strong> A molekul\u00e1k szabadon diffund\u00e1lnak az ostya fel\u00fclet\u00e9n, \u00edgy biztos\u00edtva az egyenletes lefedetts\u00e9get.<\/li>\n
      3. Adszorpci\u00f3:<\/strong> A reakci\u00f3k\u00e9pes anyagok a k\u00e9miai reakci\u00f3 el\u0151tt megtapadnak az ostya fel\u00fclet\u00e9n.<\/li>\n
      4. K\u00e9miai reakci\u00f3:<\/strong> A termikus boml\u00e1s k\u00f6zvetlen\u00fcl a hordoz\u00f3n alak\u00edtja ki a k\u00edv\u00e1nt v\u00e9konyr\u00e9teget.<\/li>\n
      5. Mell\u00e9kterm\u00e9k elt\u00e1vol\u00edt\u00e1sa:<\/strong> A nem reakt\u00edv g\u00e1zokat evaku\u00e1lj\u00e1k a tisztas\u00e1g fenntart\u00e1sa \u00e9s az interferencia megel\u0151z\u00e9se \u00e9rdek\u00e9ben.<\/li>\n
      6. Filmalak\u00edt\u00e1s:<\/strong> A reakci\u00f3term\u00e9kek fokozatosan felhalmoz\u00f3dnak, egys\u00e9ges, stabil v\u00e9konyr\u00e9teget k\u00e9pezve.<\/li>\n<\/ol>\n

        Alkalmaz\u00e1sok<\/strong><\/span><\/h2>\n
          \n
        • \u00c1rny\u00e9kol\u00f3 oxidr\u00e9teg:<\/strong> V\u00e9di a szil\u00edciumszeleteket a szennyez\u0151d\u00e9st\u0151l \u00e9s cs\u00f6kkenti az ioncsatorn\u00e1z\u00e1st az adal\u00e9kol\u00e1si folyamatok sor\u00e1n.<\/li>\n<\/ul>\n

          \"\"<\/p>\n

            \n
          • Pad oxid r\u00e9teg:<\/strong> A szil\u00edcium \u00e9s a szil\u00edcium-nitrid r\u00e9tegek k\u00f6z\u00f6tti fesz\u00fclts\u00e9gpufferk\u00e9nt m\u0171k\u00f6dik, megakad\u00e1lyozza a szil\u00edciumszelet reped\u00e9s\u00e9t \u00e9s jav\u00edtja a hozamot.<\/li>\n<\/ul>\n

            \"\"<\/p>\n

              \n
            • Kapu oxidr\u00e9teg:<\/strong> A MOS-strukt\u00far\u00e1kban a dielektromos r\u00e9teget biztos\u00edtja, amely prec\u00edz \u00e1ramvezet\u00e9st \u00e9s mez\u0151hat\u00e1s-szab\u00e1lyoz\u00e1st biztos\u00edt.<\/li>\n<\/ul>\n

              \"\"<\/p>\n

              Rendszerkonfigur\u00e1ci\u00f3k<\/strong><\/span><\/h2>\n
                \n
              • F\u00fcgg\u0151leges LPCVD:<\/strong> A folyamatg\u00e1zok fel\u00fclr\u0151l lefel\u00e9 \u00e1ramlanak, \u00edgy egyenletes lerak\u00f3d\u00e1s \u00e9rhet\u0151 el a t\u00e9telben l\u00e9v\u0151 \u00f6sszes osty\u00e1n.<\/li>\n<\/ul>\n

                \"\"<\/p>\n

                  \n
                • V\u00edzszintes LPCVD:<\/strong> A g\u00e1zok a szubsztr\u00e1tumok hossz\u00e1ban \u00e1ramlanak, ami folyamatos, nagy volumen\u0171 gy\u00e1rt\u00e1sra alkalmas, b\u00e1r a lerak\u00f3d\u00e1s vastags\u00e1ga a bemeneti oldal k\u00f6zel\u00e9ben kiss\u00e9 v\u00e1ltozhat.<\/li>\n<\/ul>\n

                  \"\"<\/p>\n

                  Gyakran ism\u00e9telt k\u00e9rd\u00e9sek<\/strong><\/span><\/h2>\n

                  1. k\u00e9rd\u00e9s: Mire haszn\u00e1lj\u00e1k els\u0151sorban az LPCVD-t?<\/strong>
                  V: Az LPCVD egy alacsony nyom\u00e1s\u00fa v\u00e9konyr\u00e9teg-lev\u00e1laszt\u00e1si elj\u00e1r\u00e1s, amelyet sz\u00e9les k\u00f6rben alkalmaznak a f\u00e9lvezet\u0151gy\u00e1rt\u00e1sban poliszil\u00edcium, szil\u00edcium-nitrid \u00e9s szil\u00edcium-oxid lev\u00e1laszt\u00e1s\u00e1ra, lehet\u0151v\u00e9 t\u00e9ve a fejlett eszk\u00f6zgy\u00e1rt\u00e1shoz sz\u00fcks\u00e9ges egyenletes \u00e9s kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 filmek el\u0151\u00e1ll\u00edt\u00e1s\u00e1t.<\/p>\n

                  2. k\u00e9rd\u00e9s: Miben k\u00fcl\u00f6nb\u00f6zik az LPCVD a PECVD-t\u0151l?<\/strong>
                  V: Az LPCVD alacsony nyom\u00e1son t\u00f6rt\u00e9n\u0151 termikus aktiv\u00e1l\u00e1sra t\u00e1maszkodik a nagy tisztas\u00e1g\u00fa filmek el\u0151\u00e1ll\u00edt\u00e1sa \u00e9rdek\u00e9ben, m\u00edg a PECVD alacsonyabb h\u0151m\u00e9rs\u00e9kleten plazm\u00e1t haszn\u00e1l a gyorsabb lev\u00e1laszt\u00e1s \u00e9rdek\u00e9ben, gyakran kiss\u00e9 alacsonyabb filmmin\u0151s\u00e9g mellett.<\/p>\n

                  3. k\u00e9rd\u00e9s: Milyen ostyam\u00e9retek \u00e9s anyagok kompatibilisek ezzel az LPCVD oxid\u00e1ci\u00f3s kemenc\u00e9vel?<\/strong>
                  V: Ez a kemence t\u00e1mogatja a 6 h\u00fcvelykes, 8 h\u00fcvelykes \u00e9s 12 h\u00fcvelykes osty\u00e1kat, \u00e9s kompatibilis a poliszil\u00edcium, szil\u00edcium-nitrid, szil\u00edcium-oxid \u00e9s SiC osty\u00e1kkal, \u00edgy rugalmasan alkalmazhat\u00f3 a k\u00fcl\u00f6nb\u00f6z\u0151 f\u00e9lvezet\u0151 alkalmaz\u00e1sokhoz.<\/p>\n

                  4. k\u00e9rd\u00e9s: Az LPCVD oxid\u00e1ci\u00f3s kemence testre szabhat\u00f3 speci\u00e1lis folyamatokhoz?<\/strong>
                  V: Igen, a rendszer modul\u00e1ris konfigur\u00e1ci\u00f3kat k\u00edn\u00e1l, bele\u00e9rtve az \u00e1ll\u00edthat\u00f3 h\u0151m\u00e9rs\u00e9kleti z\u00f3n\u00e1kat, a g\u00e1z\u00e1raml\u00e1s-szab\u00e1lyoz\u00e1st \u00e9s az oxid\u00e1ci\u00f3s \u00fczemm\u00f3dokat (sz\u00e1raz vagy nedves), lehet\u0151v\u00e9 t\u00e9ve, hogy megfeleljen a kutat\u00e1si \u00e9s az ipari m\u00e9ret\u0171 gy\u00e1rt\u00e1s k\u00fcl\u00f6nb\u00f6z\u0151 technol\u00f3giai k\u00f6vetelm\u00e9nyeinek.<\/p>","protected":false},"excerpt":{"rendered":"

                  A 6\/8\/12 h\u00fcvelykes LPCVD (alacsony nyom\u00e1s\u00fa k\u00e9miai g\u0151zf\u00e1zis\u00fa lev\u00e1laszt\u00e1s) oxid\u00e1ci\u00f3s kemence a legkorszer\u0171bb f\u00e9lvezet\u0151gy\u00e1rt\u00f3 eszk\u00f6z, amelyet prec\u00edz \u00e9s egyenletes v\u00e9konyr\u00e9teg-lev\u00e1laszt\u00e1sra terveztek. Sz\u00e9les k\u00f6rben alkalmazz\u00e1k a kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 poliszil\u00edcium, szil\u00edcium-nitrid \u00e9s szil\u00edcium-oxid r\u00e9tegek osty\u00e1kon t\u00f6rt\u00e9n\u0151 n\u00f6veszt\u00e9s\u00e9re, biztos\u00edtva a teljes\u00edtm\u00e9ny f\u00e9lvezet\u0151k, fejlett szubsztr\u00e1tok \u00e9s m\u00e1s nagy pontoss\u00e1g\u00fa alkalmaz\u00e1sok egyenletes teljes\u00edtm\u00e9ny\u00e9t.<\/p>","protected":false},"featured_media":1969,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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