{"id":2389,"date":"2026-04-24T05:55:23","date_gmt":"2026-04-24T05:55:23","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2389"},"modified":"2026-04-24T05:55:25","modified_gmt":"2026-04-24T05:55:25","slug":"cvd-silicon-carbide-sic-ring-for-semiconductor-plasma-etching","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/fr\/product\/cvd-silicon-carbide-sic-ring-for-semiconductor-plasma-etching\/","title":{"rendered":"Anneau en carbure de silicium CVD SiC pour la gravure par plasma de semi-conducteurs"},"content":{"rendered":"<p data-start=\"213\" data-end=\"577\"><img fetchpriority=\"high\" decoding=\"async\" class=\"alignright wp-image-2392 size-medium\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-300x300.png\" alt=\"Anneau en carbure de silicium CVD SiC pour la gravure par plasma de semi-conducteurs\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>L'anneau SiC (anneau en carbure de silicium) est un composant de haute performance largement utilis\u00e9 dans les \u00e9quipements de traitement plasma des semi-conducteurs, en particulier dans les chambres de gravure et de d\u00e9p\u00f4t. Fabriqu\u00e9 \u00e0 partir de carbure de silicium par d\u00e9p\u00f4t chimique en phase vapeur (CVD), ce produit offre une r\u00e9sistance exceptionnelle \u00e0 l'\u00e9rosion par le plasma, aux temp\u00e9ratures \u00e9lev\u00e9es et aux environnements chimiques agressifs.<\/p>\n<p data-start=\"579\" data-end=\"989\">Dans la fabrication des semi-conducteurs, les composants de la chambre sont continuellement expos\u00e9s \u00e0 des gaz r\u00e9actifs tels que les produits chimiques \u00e0 base de fluor et de chlore (CF\u2084, SF\u2086, Cl\u2082), ainsi qu'\u00e0 un bombardement d'ions \u00e0 haute \u00e9nergie. Dans de telles conditions, les composants traditionnels en silicium ont tendance \u00e0 se d\u00e9grader plus rapidement. En revanche, les anneaux en SiC offrent une durabilit\u00e9 nettement accrue, une r\u00e9duction de la production de particules et une meilleure stabilit\u00e9 des processus.<\/p>\n<p data-start=\"991\" data-end=\"1355\">Gr\u00e2ce \u00e0 sa r\u00e9sistance m\u00e9canique, sa conductivit\u00e9 thermique et son inertie chimique exceptionnelles, le SiC CVD est consid\u00e9r\u00e9 comme l'un des mat\u00e9riaux les plus fiables pour les \u00e9quipements semi-conducteurs de la prochaine g\u00e9n\u00e9ration. Les anneaux SiC sont g\u00e9n\u00e9ralement install\u00e9s comme anneaux de focalisation, anneaux de bord ou anneaux de protection de la chambre, ce qui permet de contr\u00f4ler la distribution du plasma et de prot\u00e9ger les parties critiques de la chambre.<\/p>\n<p data-start=\"1357\" data-end=\"1595\">Ces anneaux sont class\u00e9s comme consommables critiques pour les semi-conducteurs, offrant une dur\u00e9e de vie beaucoup plus longue que les anneaux en silicium conventionnels, ce qui les rend id\u00e9aux pour les n\u0153uds de processus avanc\u00e9s et les environnements de fabrication \u00e0 haut d\u00e9bit.<\/p>\n<hr data-start=\"1597\" data-end=\"1600\" \/>\n<h2 data-section-id=\"1wht24f\" data-start=\"1602\" data-end=\"1622\">Caract\u00e9ristiques principales<\/h2>\n<p><img decoding=\"async\" class=\"size-medium wp-image-2390 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/p>\n<ul data-start=\"1623\" data-end=\"2189\">\n<li data-section-id=\"185xteb\" data-start=\"1623\" data-end=\"1725\">Mat\u00e9riau SiC CVD de haute puret\u00e9 : Garantit une excellente int\u00e9grit\u00e9 structurelle et une contamination minimale<\/li>\n<li data-section-id=\"103qh1t\" data-start=\"1726\" data-end=\"1822\">R\u00e9sistance exceptionnelle au plasma : R\u00e9sistance sup\u00e9rieure au plasma \u00e0 base de fluor et de chlore<\/li>\n<li data-section-id=\"19jl5gi\" data-start=\"1823\" data-end=\"1924\">Stabilit\u00e9 \u00e0 haute temp\u00e9rature : Maintien des performances dans les environnements de traitement \u00e0 haute temp\u00e9rature<\/li>\n<li data-section-id=\"ixqmoc\" data-start=\"1925\" data-end=\"2002\">Faible g\u00e9n\u00e9ration de particules : Am\u00e9liore le rendement des plaquettes et la propret\u00e9 du processus<\/li>\n<li data-section-id=\"nx34my\" data-start=\"2003\" data-end=\"2084\">Dur\u00e9e de vie prolong\u00e9e : G\u00e9n\u00e9ralement plusieurs fois sup\u00e9rieure \u00e0 celle des composants en silicium<\/li>\n<li data-section-id=\"14jsdwf\" data-start=\"2085\" data-end=\"2189\">Usinage de pr\u00e9cision : Tol\u00e9rances serr\u00e9es (&lt;10 \u03bcm) pour une int\u00e9gration transparente dans les outils pour semi-conducteurs.<\/li>\n<\/ul>\n<hr data-start=\"2191\" data-end=\"2194\" \/>\n<h2 data-section-id=\"1vgwxle\" data-start=\"2196\" data-end=\"2228\">Sp\u00e9cifications techniques<\/h2>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"2230\" data-end=\"2883\">\n<thead data-start=\"2230\" data-end=\"2259\">\n<tr data-start=\"2230\" data-end=\"2259\">\n<th class=\"\" data-start=\"2230\" data-end=\"2242\" data-col-size=\"sm\">Param\u00e8tres<\/th>\n<th class=\"\" data-start=\"2242\" data-end=\"2259\" data-col-size=\"md\">Sp\u00e9cifications<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"2287\" data-end=\"2883\">\n<tr data-start=\"2287\" data-end=\"2327\">\n<td data-start=\"2287\" data-end=\"2298\" data-col-size=\"sm\">Mat\u00e9riau<\/td>\n<td data-col-size=\"md\" data-start=\"2298\" data-end=\"2327\">Carbure de silicium CVD (SiC)<\/td>\n<\/tr>\n<tr data-start=\"2328\" data-end=\"2348\">\n<td data-start=\"2328\" data-end=\"2337\" data-col-size=\"sm\">La puret\u00e9<\/td>\n<td data-col-size=\"md\" data-start=\"2337\" data-end=\"2348\">\u2265 99.9%<\/td>\n<\/tr>\n<tr data-start=\"2349\" data-end=\"2374\">\n<td data-start=\"2349\" data-end=\"2359\" data-col-size=\"sm\">Densit\u00e9<\/td>\n<td data-col-size=\"md\" data-start=\"2359\" data-end=\"2374\">\u2265 3,1 g\/cm\u00b3<\/td>\n<\/tr>\n<tr data-start=\"2375\" data-end=\"2408\">\n<td data-start=\"2375\" data-end=\"2392\" data-col-size=\"sm\">Diam\u00e8tre (Max)<\/td>\n<td data-col-size=\"md\" data-start=\"2392\" data-end=\"2408\">Jusqu'\u00e0 370 mm<\/td>\n<\/tr>\n<tr data-start=\"2409\" data-end=\"2451\">\n<td data-start=\"2409\" data-end=\"2421\" data-col-size=\"sm\">\u00c9paisseur<\/td>\n<td data-col-size=\"md\" data-start=\"2421\" data-end=\"2451\">Sur mesure (typiquement 5-30 mm)<\/td>\n<\/tr>\n<tr data-start=\"2452\" data-end=\"2487\">\n<td data-start=\"2452\" data-end=\"2472\" data-col-size=\"sm\">R\u00e9sistivit\u00e9 (faible)<\/td>\n<td data-col-size=\"md\" data-start=\"2472\" data-end=\"2487\">&lt; 0,02 \u03a9-cm<\/td>\n<\/tr>\n<tr data-start=\"2488\" data-end=\"2528\">\n<td data-start=\"2488\" data-end=\"2511\" data-col-size=\"sm\">R\u00e9sistivit\u00e9 (moyenne)<\/td>\n<td data-col-size=\"md\" data-start=\"2511\" data-end=\"2528\">0,2 - 25 \u03a9-cm<\/td>\n<\/tr>\n<tr data-start=\"2529\" data-end=\"2564\">\n<td data-start=\"2529\" data-end=\"2550\" data-col-size=\"sm\">R\u00e9sistivit\u00e9 (\u00e9lev\u00e9e)<\/td>\n<td data-col-size=\"md\" data-start=\"2550\" data-end=\"2564\">&gt; 100 \u03a9-cm<\/td>\n<\/tr>\n<tr data-start=\"2565\" data-end=\"2604\">\n<td data-start=\"2565\" data-end=\"2596\" data-col-size=\"sm\">Uniformit\u00e9 de la r\u00e9sistivit\u00e9 (RRG)<\/td>\n<td data-col-size=\"md\" data-start=\"2596\" data-end=\"2604\">&lt; 5%<\/td>\n<\/tr>\n<tr data-start=\"2605\" data-end=\"2670\">\n<td data-start=\"2605\" data-end=\"2625\" data-col-size=\"sm\">\u00c9tat de surface<\/td>\n<td data-col-size=\"md\" data-start=\"2625\" data-end=\"2670\">Sol (polissage disponible sur demande)<\/td>\n<\/tr>\n<tr data-start=\"2671\" data-end=\"2723\">\n<td data-start=\"2671\" data-end=\"2696\" data-col-size=\"sm\">Rugosit\u00e9 de la surface (Ra)<\/td>\n<td data-col-size=\"md\" data-start=\"2696\" data-end=\"2723\">\u2264 1,6 \u03bcm (personnalisable)<\/td>\n<\/tr>\n<tr data-start=\"2724\" data-end=\"2757\">\n<td data-start=\"2724\" data-end=\"2746\" data-col-size=\"sm\">Usinage de pr\u00e9cision<\/td>\n<td data-col-size=\"md\" data-start=\"2746\" data-end=\"2757\">&lt; 10 \u03bcm<\/td>\n<\/tr>\n<tr data-start=\"2758\" data-end=\"2799\">\n<td data-start=\"2758\" data-end=\"2781\" data-col-size=\"sm\">Conductivit\u00e9 thermique<\/td>\n<td data-col-size=\"md\" data-start=\"2781\" data-end=\"2799\">~120-200 W\/m-K<\/td>\n<\/tr>\n<tr data-start=\"2800\" data-end=\"2824\">\n<td data-start=\"2800\" data-end=\"2811\" data-col-size=\"sm\">Duret\u00e9<\/td>\n<td data-col-size=\"md\" data-start=\"2811\" data-end=\"2824\">~9,2 Mohs<\/td>\n<\/tr>\n<tr data-start=\"2825\" data-end=\"2883\">\n<td data-start=\"2825\" data-end=\"2843\" data-col-size=\"sm\">Contr\u00f4le de la qualit\u00e9<\/td>\n<td data-col-size=\"md\" data-start=\"2843\" data-end=\"2883\">Exempt de fissures, d'\u00e9clats et de contamination<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<hr data-start=\"2885\" data-end=\"2888\" \/>\n<h2 data-section-id=\"1gggyhy\" data-start=\"2890\" data-end=\"2910\">Applications<\/h2>\n<p data-start=\"2911\" data-end=\"3025\">Les anneaux en SiC sont des composants essentiels dans l'\u00e9quipement des semi-conducteurs o\u00f9 la durabilit\u00e9 et la r\u00e9sistance au plasma sont critiques :<\/p>\n<ul data-start=\"3027\" data-end=\"3241\">\n<li data-section-id=\"qzqq98\" data-start=\"3027\" data-end=\"3065\">Syst\u00e8mes de gravure par plasma (ICP \/ RIE)<\/li>\n<li data-section-id=\"1iourx1\" data-start=\"3066\" data-end=\"3109\">D\u00e9p\u00f4t chimique en phase vapeur (CVD \/ PECVD)<\/li>\n<li data-section-id=\"yfc3l\" data-start=\"3110\" data-end=\"3149\">Applications de la bague de mise au point \/ de la bague de bordure<\/li>\n<li data-section-id=\"14j8f1u\" data-start=\"3150\" data-end=\"3193\">Rev\u00eatement de la chambre et \u00e9l\u00e9ments de protection<\/li>\n<li data-section-id=\"1l8pbfg\" data-start=\"3194\" data-end=\"3241\">Environnements de traitement du plasma \u00e0 haute densit\u00e9<\/li>\n<\/ul>\n<p data-start=\"3243\" data-end=\"3383\">Ils sont particuli\u00e8rement adapt\u00e9s aux n\u0153uds avanc\u00e9s et aux processus de gravure difficiles, o\u00f9 les composants en silicium ne peuvent pas r\u00e9pondre aux exigences de dur\u00e9e de vie.<\/p>\n<p data-start=\"3243\" data-end=\"3383\"><img decoding=\"async\" class=\"aligncenter wp-image-2393 size-large\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva-1024x511.jpg\" alt=\"\" width=\"1024\" height=\"511\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva-1024x511.jpg 1024w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva-300x150.jpg 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva-768x383.jpg 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva-18x9.jpg 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva-600x299.jpg 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva.jpg 1080w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/><\/p>\n<hr data-start=\"3385\" data-end=\"3388\" \/>\n<h2 data-section-id=\"j4gip\" data-start=\"3390\" data-end=\"3436\">Pourquoi choisir un anneau SiC plut\u00f4t qu'un anneau en silicium ?<\/h2>\n<p data-start=\"3437\" data-end=\"3702\">Par rapport aux anneaux en silicium traditionnels, les anneaux en SiC offrent une am\u00e9lioration significative de la dur\u00e9e de vie et de la stabilit\u00e9 du processus. Si les anneaux en silicium sont plus rentables au d\u00e9part, ils s'usent plus rapidement dans des conditions de plasma agressives et n\u00e9cessitent des remplacements plus fr\u00e9quents.<\/p>\n<p data-start=\"3704\" data-end=\"3742\">Les anneaux en SiC, quant \u00e0 eux, offrent :<\/p>\n<ul data-start=\"3743\" data-end=\"3903\">\n<li data-section-id=\"17mv8nk\" data-start=\"3743\" data-end=\"3772\">Dur\u00e9e de vie 3-10\u00d7 plus longue<\/li>\n<li data-section-id=\"16lo0t8\" data-start=\"3773\" data-end=\"3820\">Meilleure r\u00e9sistance \u00e0 la corrosion chimique<\/li>\n<li data-section-id=\"19uuz0f\" data-start=\"3821\" data-end=\"3857\">Une contamination plus faible par les particules<\/li>\n<li data-section-id=\"uhpkja\" data-start=\"3858\" data-end=\"3903\">R\u00e9duction des temps d'arr\u00eat et des co\u00fbts de maintenance<\/li>\n<\/ul>\n<p data-start=\"3905\" data-end=\"4056\">Pour la fabrication de semi-conducteurs haut de gamme, le co\u00fbt total de possession (TCO) est souvent inf\u00e9rieur lorsque l'on utilise des composants SiC, malgr\u00e9 leur co\u00fbt initial plus \u00e9lev\u00e9.<\/p>\n<p data-start=\"3905\" data-end=\"4056\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-2383 size-large aligncenter\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/\u5fae\u4fe1\u56fe\u7247_20260423181006_366_381-1024x486.png\" alt=\"\" width=\"1024\" height=\"486\" srcset=\"\" sizes=\"(max-width: 1024px) 100vw, 1024px\" data-srcset=\"\" \/><\/p>\n<hr data-start=\"4058\" data-end=\"4061\" \/>\n<h2 data-section-id=\"cpu4ih\" data-start=\"4063\" data-end=\"4074\">FAQ<\/h2>\n<p data-start=\"4076\" data-end=\"4283\">Q1 : L'anneau SiC est-il un produit consommable ?<br data-start=\"4121\" data-end=\"4124\" \/>Oui, il est consid\u00e9r\u00e9 comme un consommable critique des semi-conducteurs. Bien qu'il ait une dur\u00e9e de vie plus longue que les pi\u00e8ces en silicium, il finira par s'user sous l'effet de l'exposition au plasma.<\/p>\n<p data-start=\"4285\" data-end=\"4492\">Q2 : Quels sont les avantages du mat\u00e9riau CVD SiC ?<br data-start=\"4335\" data-end=\"4338\" \/>Le SiC CVD offre une tr\u00e8s grande puret\u00e9, une structure dense et une excellente r\u00e9sistance au plasma et aux produits chimiques, ce qui le rend id\u00e9al pour les applications dans le domaine des semi-conducteurs.<\/p>\n<p data-start=\"4494\" data-end=\"4668\">Q3 : L'anneau SiC peut-il \u00eatre personnalis\u00e9 ?<br data-start=\"4533\" data-end=\"4536\" \/>Oui. Le diam\u00e8tre, l'\u00e9paisseur, la r\u00e9sistivit\u00e9 et la finition de la surface peuvent tous \u00eatre personnalis\u00e9s sur la base de vos dessins ou des exigences de votre \u00e9quipement.<\/p>\n<p data-start=\"4670\" data-end=\"4814\">Q4 : Quelle est la dur\u00e9e de vie d'un anneau en SiC par rapport \u00e0 un anneau en silicium ?<br data-start=\"4735\" data-end=\"4738\" \/>En g\u00e9n\u00e9ral, les anneaux en SiC durent de 3 \u00e0 10 fois plus longtemps, en fonction des conditions du processus.<\/p>\n<p data-start=\"4816\" data-end=\"4928\">Q5 : Quel est le d\u00e9lai d'ex\u00e9cution ?<br data-start=\"4846\" data-end=\"4849\" \/>Le d\u00e9lai de production est g\u00e9n\u00e9ralement de 4 \u00e0 8 semaines, en fonction de la complexit\u00e9 du dessin et de la quantit\u00e9.<\/p>","protected":false},"excerpt":{"rendered":"<p>L'anneau SiC (anneau en carbure de silicium) est un composant de haute performance largement utilis\u00e9 dans les \u00e9quipements de traitement plasma des semi-conducteurs, en particulier dans les chambres de gravure et de d\u00e9p\u00f4t. Fabriqu\u00e9 \u00e0 partir de carbure de silicium par d\u00e9p\u00f4t chimique en phase vapeur (CVD), ce produit offre une r\u00e9sistance exceptionnelle \u00e0 l'\u00e9rosion par le plasma, aux temp\u00e9ratures \u00e9lev\u00e9es et aux environnements chimiques agressifs.<\/p>","protected":false},"featured_media":2392,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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