{"id":2346,"date":"2026-04-22T05:56:29","date_gmt":"2026-04-22T05:56:29","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2346"},"modified":"2026-04-22T07:25:08","modified_gmt":"2026-04-22T07:25:08","slug":"ai250-medium-beam-room-temperature-ion-implantation-system-for-6-8-inch-silicon-wafer-processing","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/fr\/product\/ai250-medium-beam-room-temperature-ion-implantation-system-for-6-8-inch-silicon-wafer-processing\/","title":{"rendered":"Syst\u00e8me d'implantation d'ions \u00e0 temp\u00e9rature ambiante Ai250 (faisceau moyen) pour le traitement de tranches de silicium de 6 \u00e0 8 pouces"},"content":{"rendered":"

\"\"Le syst\u00e8me d'implantation ionique Ai250 (Medium Beam) est con\u00e7u pour les lignes de fabrication de semi-conducteurs \u00e0 partir de tranches de silicium de 6 et 8 pouces. Il s'agit d'un implanteur ionique \u00e0 courant moyen utilis\u00e9 dans les processus de fabrication de circuits int\u00e9gr\u00e9s avanc\u00e9s, offrant des performances de faisceau stables, une grande pr\u00e9cision d'implantation et un contr\u00f4le fiable de la dose.<\/p>\n

Le syst\u00e8me prend en charge une gamme d'\u00e9nergie allant de 5 keV \u00e0 250 keV, ce qui permet des applications d'implantation ionique \u00e0 la fois superficielles et profondes. Il convient \u00e0 une large gamme de proc\u00e9d\u00e9s de dopage des semi-conducteurs et est enti\u00e8rement compatible avec les exigences de fabrication des LSI.<\/p>\n

\n

Caract\u00e9ristiques<\/h2>\n

Performance stable des faisceaux moyens<\/h3>\n

Assure la stabilit\u00e9 du faisceau d'ions pendant les longs cycles de production, am\u00e9liorant ainsi la coh\u00e9rence du processus et r\u00e9duisant la variabilit\u00e9.<\/p>\n

Capacit\u00e9 d'une large gamme d'\u00e9nergie<\/h3>\n

La gamme d'\u00e9nergie de 5 \u00e0 250 keV r\u00e9pond aux exigences d'implantation flexibles pour diff\u00e9rentes structures de dispositifs et n\u0153uds de processus.<\/p>\n

Contr\u00f4le de processus de haute pr\u00e9cision<\/h3>\n

Fournit des performances d'implantation de haute pr\u00e9cision avec une pr\u00e9cision angulaire \u2264 0,2\u00b0, un parall\u00e9lisme de faisceau \u2264 0,2\u00b0, une uniformit\u00e9 \u2264 0,5% et une r\u00e9p\u00e9tabilit\u00e9 \u2264 0,5%.<\/p>\n

Capacit\u00e9 de production \u00e9lev\u00e9e<\/h3>\n

Prend en charge \u2265 200 plaquettes par heure, ce qui convient \u00e0 la production de semi-conducteurs en volume moyen \u00e0 \u00e9lev\u00e9.<\/p>\n

Fonction de l'implant<\/h3>\n

Elle permet l'implantation multizone et quadrant sur une seule plaquette, ce qui am\u00e9liore la flexibilit\u00e9 du processus et r\u00e9duit les co\u00fbts de d\u00e9veloppement.<\/p>\n

Compatibilit\u00e9 des processus LSI<\/h3>\n

Enti\u00e8rement compatible avec les processus de fabrication de semi-conducteurs LSI.<\/p>\n

\"\"<\/p>\n

\n

Principales sp\u00e9cifications<\/h2>\n

Param\u00e8tres du processus<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
Objet<\/th>\nSp\u00e9cifications<\/th>\n<\/tr>\n<\/thead>\n
Taille de la plaquette<\/td>\nGaufrettes de silicium de 6 \u00e0 8 pouces<\/td>\n<\/tr>\n
Gamme d'\u00e9nergie<\/td>\n5-250 keV<\/td>\n<\/tr>\n
\u00c9l\u00e9ments implant\u00e9s<\/td>\nB+, P+, As+, Ar+, N+, H+<\/td>\n<\/tr>\n
Gamme de doses<\/td>\n5E11-1E16 ions\/cm\u00b2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Performance des faisceaux<\/h3>\n
\n
\n\n\n\n\n\n\n\n
Objet<\/th>\nSp\u00e9cifications<\/th>\n<\/tr>\n<\/thead>\n
Courant maximal du faisceau<\/td>\nAr+ \u2265 1300 \u03bcA @ \u2265220 keV
\nB+ \u2265 1000 \u03bcA @ \u2265220 keV
\nP+ \u2265 1300 \u03bcA @ \u2265220 keV
\nN+ \u2265 1000 \u03bcA @ \u2265220 keV<\/td>\n<\/tr>\n
Stabilit\u00e9 de la poutre<\/td>\n\u2264 15% \/ heure (interruption du faisceau et arc \u2264 1 fois par heure)<\/td>\n<\/tr>\n
Parall\u00e9lisme des poutres<\/td>\n\u2264 0.2\u00b0<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Pr\u00e9cision de l'implantation<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
Objet<\/th>\nSp\u00e9cifications<\/th>\n<\/tr>\n<\/thead>\n
Gamme d'angles de l'implant<\/td>\n0\u00b0-45\u00b0<\/td>\n<\/tr>\n
Pr\u00e9cision de l'angle<\/td>\n\u2264 0.2\u00b0<\/td>\n<\/tr>\n
Uniformit\u00e9 (1\u03c3)<\/td>\n\u2264 0,5% (B+, 2E14, 150 keV)<\/td>\n<\/tr>\n
R\u00e9p\u00e9tabilit\u00e9 (1\u03c3)<\/td>\n\u2264 0,5%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Performance du syst\u00e8me<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n\n
Objet<\/th>\nSp\u00e9cifications<\/th>\n<\/tr>\n<\/thead>\n
D\u00e9bit<\/td>\n\u2265 200 gaufres par heure<\/td>\n<\/tr>\n
Niveau de vide<\/td>\n< 5E-7 Torr<\/td>\n<\/tr>\n
Fuite de rayons X<\/td>\n\u2264 0,6 \u03bcSv\/h<\/td>\n<\/tr>\n
Mode de num\u00e9risation<\/td>\nBalayage \u00e9lectrostatique horizontal + balayage m\u00e9canique vertical<\/td>\n<\/tr>\n
Taille de l'\u00e9quipement<\/td>\n5600 \u00d7 3300 \u00d7 2600 mm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\n

Champs d'application<\/h2>\n

Fabrication de dispositifs semi-conducteurs<\/h3>\n

Utilis\u00e9 dans la production de dispositifs logiques CMOS, il permet l'implantation pr\u00e9cise de dopants pour la formation de transistors.<\/p>\n

Fabrication de circuits int\u00e9gr\u00e9s<\/h3>\n

Utilis\u00e9 dans les processus de fabrication des circuits int\u00e9gr\u00e9s de grande dimension et des circuits int\u00e9gr\u00e9s avanc\u00e9s n\u00e9cessitant un contr\u00f4le du dopage de haute pr\u00e9cision.<\/p>\n

Formation de jonction superficielle et profonde<\/h3>\n

Soutient les processus d'implantation pour l'ing\u00e9nierie source\/drain et le contr\u00f4le de la profondeur des jonctions.<\/p>\n

Ing\u00e9nierie des dopants<\/h3>\n

Utilis\u00e9 pour contr\u00f4ler les propri\u00e9t\u00e9s \u00e9lectriques des plaquettes de silicium gr\u00e2ce \u00e0 une implantation ionique pr\u00e9cise.<\/p>\n

D\u00e9veloppement de proc\u00e9d\u00e9s et R&D<\/h3>\n

Convient au d\u00e9veloppement de processus de semi-conducteurs, \u00e0 la production pilote et \u00e0 la fabrication de dispositifs exp\u00e9rimentaux.<\/p>\n

\n

Questions fr\u00e9quemment pos\u00e9es<\/h2>\n

1. Quelles sont les tailles de plaquettes prises en charge par l'Ai250 ?<\/h3>\n

Le syst\u00e8me prend en charge les plaquettes de silicium de 6 et 8 pouces et convient aux lignes de fabrication de semi-conducteurs courantes.<\/p>\n

2. Quelle est la gamme d'\u00e9nergie du syst\u00e8me ?<\/h3>\n

La gamme d'\u00e9nergie s'\u00e9tend de 5 keV \u00e0 250 keV, ce qui permet d'utiliser des proc\u00e9d\u00e9s d'implantation superficielle et profonde pour la fabrication de dispositifs semi-conducteurs.<\/p>\n

3. Quel est le niveau de pr\u00e9cision du processus fourni par le syst\u00e8me ?<\/h3>\n

Le syst\u00e8me offre une pr\u00e9cision angulaire de 0,2\u00b0, un parall\u00e9lisme du faisceau de 0,2\u00b0, une uniformit\u00e9 et une r\u00e9p\u00e9tabilit\u00e9 de 0,5%, ce qui garantit une production stable et \u00e0 haut rendement.<\/p>","protected":false},"excerpt":{"rendered":"

Le syst\u00e8me d'implantation ionique Ai250 (Medium Beam) est con\u00e7u pour les lignes de fabrication de semi-conducteurs \u00e0 partir de tranches de silicium de 6 et 8 pouces. Il s'agit d'un implanteur ionique \u00e0 courant moyen utilis\u00e9 dans les processus de fabrication de circuits int\u00e9gr\u00e9s avanc\u00e9s, offrant des performances de faisceau stables, une grande pr\u00e9cision d'implantation et un contr\u00f4le fiable de la dose.<\/p>","protected":false},"featured_media":2347,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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