{"id":2342,"date":"2026-04-22T05:35:46","date_gmt":"2026-04-22T05:35:46","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2342"},"modified":"2026-04-22T07:27:32","modified_gmt":"2026-04-22T07:27:32","slug":"high-efficiency-ai80hchigh-beam-ion-implantation-equipment-for-advanced-silicon-wafer-doping","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/fr\/product\/high-efficiency-ai80hchigh-beam-ion-implantation-equipment-for-advanced-silicon-wafer-doping\/","title":{"rendered":"Equipement d'implantation d'ions Ai80HC (High Beam) \u00e0 haute efficacit\u00e9 pour le dopage avanc\u00e9 des tranches de silicium"},"content":{"rendered":"<p data-start=\"153\" data-end=\"528\"><img fetchpriority=\"high\" decoding=\"async\" class=\"alignright wp-image-2343 size-medium\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-300x300.png\" alt=\"Equipement d&#039;implantation d&#039;ions Ai80HC (High Beam) \u00e0 haute efficacit\u00e9 pour le dopage avanc\u00e9 des tranches de silicium\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>L'\u00e9quipement d'implantation ionique Ai80HC (High Beam) est un implanteur ionique \u00e0 courant \u00e9lev\u00e9 sp\u00e9cialement con\u00e7u pour les lignes de production de semi-conducteurs \u00e0 partir de tranches de silicium de 12 pouces. Il est con\u00e7u pour les processus de dopage de pr\u00e9cision avanc\u00e9s dans la fabrication moderne de circuits int\u00e9gr\u00e9s, offrant des performances de faisceau stables, une r\u00e9p\u00e9tabilit\u00e9 \u00e9lev\u00e9e du processus et une excellente pr\u00e9cision de contr\u00f4le de la dose.<\/p>\n<p data-start=\"530\" data-end=\"891\">Le syst\u00e8me fonctionne dans une large gamme d'\u00e9nergie de 0,5 keV \u00e0 80 keV, ce qui permet des conditions d'implantation flexibles pour l'ing\u00e9nierie des jonctions peu profondes et moyennement profondes. Il prend en charge plusieurs esp\u00e8ces d'implantation, notamment \u00b9\u00b9B\u207a, \u2074\u2079BF\u2082\u207a, \u00b3\u00b9P\u207a, \u2077\u2075As\u207a, \u00b9\u2074N\u207a et \u00b9H\u207a, ce qui le rend adapt\u00e9 \u00e0 une large gamme de processus de fabrication de dispositifs CMOS et de dispositifs logiques avanc\u00e9s.<\/p>\n<p data-start=\"893\" data-end=\"1243\">Avec une plage d'angles d'implantation de 0\u00b0 \u00e0 45\u00b0 et une grande pr\u00e9cision angulaire de \u2264 0,1\u00b0, le syst\u00e8me assure un contr\u00f4le pr\u00e9cis de la distribution du dopant et de l'ing\u00e9nierie du profil de la jonction. Associ\u00e9 \u00e0 un parall\u00e9lisme de faisceau de \u2264 0,3\u00b0 et \u00e0 une uniformit\u00e9 de \u2264 1% (1\u03c3), l'Ai80HC (High Beam) offre une stabilit\u00e9 de processus coh\u00e9rente d'un wafer \u00e0 l'autre et \u00e0 l'int\u00e9rieur d'un wafer.<\/p>\n<p data-start=\"1245\" data-end=\"1496\">Con\u00e7u pour les environnements de production \u00e0 haut rendement, le syst\u00e8me atteint un d\u00e9bit de \u2265 200 plaquettes par heure (WPH) tout en maintenant une stricte stabilit\u00e9 du processus, ce qui le rend adapt\u00e9 aux lignes de fabrication de semi-conducteurs avanc\u00e9s compatibles avec les LSI.<\/p>\n<h2 data-section-id=\"12rj9ab\" data-start=\"1101\" data-end=\"1126\">Architecture du syst\u00e8me<\/h2>\n<p data-start=\"1128\" data-end=\"1199\">L'Ai80HC adopte une conception de ligne de faisceaux mature et fiable, compos\u00e9e de<\/p>\n<ul data-start=\"1201\" data-end=\"1436\">\n<li data-section-id=\"1kfcth9\" data-start=\"1201\" data-end=\"1215\">Source d'ions<\/li>\n<li data-section-id=\"1r1hm7c\" data-start=\"1216\" data-end=\"1237\">Syst\u00e8me d'extraction<\/li>\n<li data-section-id=\"1twz66q\" data-start=\"1238\" data-end=\"1255\">Analyseur de masse<\/li>\n<li data-section-id=\"ywuuxz\" data-start=\"1256\" data-end=\"1280\">Syst\u00e8me de lentilles magn\u00e9tiques<\/li>\n<li data-section-id=\"1s57tik\" data-start=\"1281\" data-end=\"1302\">Tube d'acc\u00e9l\u00e9ration<\/li>\n<li data-section-id=\"pg1cgy\" data-start=\"1303\" data-end=\"1336\">Syst\u00e8me de balayage \u00e9lectrostatique<\/li>\n<li data-section-id=\"1iwk7km\" data-start=\"1337\" data-end=\"1367\">Lentille de mise en forme de faisceau parall\u00e8le<\/li>\n<li data-section-id=\"1cur4hx\" data-start=\"1368\" data-end=\"1401\">Chambre de traitement (poste final)<\/li>\n<li data-section-id=\"qtlnqu\" data-start=\"1402\" data-end=\"1436\">Syst\u00e8me de chargement et de cassettes de plaquettes<\/li>\n<\/ul>\n<p data-start=\"1438\" data-end=\"1458\">Il est \u00e9quip\u00e9 de :<\/p>\n<ul data-start=\"1459\" data-end=\"1572\">\n<li data-section-id=\"1jzaueb\" data-start=\"1459\" data-end=\"1494\">Plateau de serrage \u00e9lectrostatique pour plaquettes de silicium<\/li>\n<li data-section-id=\"1s8wavu\" data-start=\"1495\" data-end=\"1530\">Technologie de source d'ions \u00e0 longue dur\u00e9e de vie<\/li>\n<li data-section-id=\"6mih95\" data-start=\"1531\" data-end=\"1572\">Syst\u00e8me de manutention des plaquettes enti\u00e8rement automatis\u00e9<\/li>\n<\/ul>\n<p data-start=\"1574\" data-end=\"1686\">Cette architecture garantit une grande stabilit\u00e9 du faisceau, une r\u00e9duction des temps d'arr\u00eat pour maintenance et une meilleure r\u00e9p\u00e9tabilit\u00e9 des processus.<\/p>\n<p data-start=\"1574\" data-end=\"1686\"><img decoding=\"async\" class=\"aligncenter wp-image-2371 size-large\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-1024x388.png\" alt=\"\" width=\"1024\" height=\"388\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-1024x388.png 1024w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-300x114.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-768x291.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-18x7.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-600x227.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs.png 1216w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/><\/p>\n<h2 data-section-id=\"106914\" data-start=\"1693\" data-end=\"1727\">Principales sp\u00e9cifications techniques<\/h2>\n<table>\n<thead>\n<tr>\n<th>Objet<\/th>\n<th>Sp\u00e9cifications<\/th>\n<\/tr>\n<\/thead>\n<tbody>\n<tr>\n<td>Taille de la plaquette<\/td>\n<td>12 pouces<\/td>\n<\/tr>\n<tr>\n<td>Gamme d'\u00e9nergie<\/td>\n<td>0,5 - 80 keV<\/td>\n<\/tr>\n<tr>\n<td>\u00c9l\u00e9ments implant\u00e9s<\/td>\n<td>\u00b9\u00b9B\u207a, \u2074\u2079BF\u2082\u207a, \u00b3\u00b9P\u207a, \u2077\u2075As\u207a, \u00b9\u2074N\u207a, \u00b9H\u207a<\/td>\n<\/tr>\n<tr>\n<td>Angle de l'implant<\/td>\n<td>0\u00b0 - 45\u00b0<\/td>\n<\/tr>\n<tr>\n<td>Pr\u00e9cision de l'angle<\/td>\n<td>\u2264 0.1\u00b0<\/td>\n<\/tr>\n<tr>\n<td>Gamme de doses<\/td>\n<td>5E11 - 1E17 ions\/cm\u00b2<\/td>\n<\/tr>\n<tr>\n<td>Stabilit\u00e9 de la poutre<\/td>\n<td>\u2264 10% \/ heure (dans les 60 minutes ; interruption du faisceau et arc \u2264 1 fois)<\/td>\n<\/tr>\n<tr>\n<td>Parall\u00e9lisme des poutres<\/td>\n<td>\u2264 0.3\u00b0<\/td>\n<\/tr>\n<tr>\n<td>D\u00e9bit (WPH)<\/td>\n<td>\u2265 200 plaquettes\/heure<\/td>\n<\/tr>\n<tr>\n<td>Uniformit\u00e9 (1\u03c3)<\/td>\n<td>\u2264 1%<\/td>\n<\/tr>\n<tr>\n<td>R\u00e9p\u00e9tabilit\u00e9 (1\u03c3)<\/td>\n<td>\u2264 1%<\/td>\n<\/tr>\n<tr>\n<td>Compatibilit\u00e9 des processus<\/td>\n<td>Compatible avec le processus LSI<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<h2 data-section-id=\"yb78ly\" data-start=\"2475\" data-end=\"2506\">Principales caract\u00e9ristiques et avantages<\/h2>\n<h3 data-section-id=\"13hha2k\" data-start=\"2508\" data-end=\"2541\">1. Syst\u00e8me de contr\u00f4le intelligent<\/h3>\n<p data-start=\"2542\" data-end=\"2706\">\u00c9quip\u00e9 d'une plate-forme logicielle visualis\u00e9e et intelligente, il permet une utilisation simplifi\u00e9e, un diagnostic rapide des d\u00e9faillances et une grande stabilit\u00e9 du syst\u00e8me pendant la production.<\/p>\n<h3 data-section-id=\"1cy4f9q\" data-start=\"2713\" data-end=\"2740\">2. Source d'ions \u00e0 longue dur\u00e9e de vie<\/h3>\n<p data-start=\"2741\" data-end=\"2863\">Adopte une conception avanc\u00e9e de la source d'ions avec une dur\u00e9e de vie de \u2265500 heures, r\u00e9duisant consid\u00e9rablement les temps d'arr\u00eat et les co\u00fbts de maintenance.<\/p>\n<h3 data-section-id=\"4euk5j\" data-start=\"2870\" data-end=\"2903\">3. Capacit\u00e9 de diagnostic des faisceaux<\/h3>\n<p data-start=\"2904\" data-end=\"2988\">Syst\u00e8me int\u00e9gr\u00e9 de mesure du profil du faisceau en 2D, capable de contr\u00f4ler avec pr\u00e9cision :<\/p>\n<ul data-start=\"2989\" data-end=\"3019\">\n<li data-section-id=\"1ct5xfp\" data-start=\"2989\" data-end=\"3003\">Largeur du faisceau<\/li>\n<li data-section-id=\"1vm2uvw\" data-start=\"3004\" data-end=\"3019\">Hauteur du faisceau<\/li>\n<\/ul>\n<p data-start=\"3021\" data-end=\"3092\">Cela permet d'am\u00e9liorer la pr\u00e9cision de l'implantation et la r\u00e9p\u00e9tabilit\u00e9 du processus.<\/p>\n<h3 data-section-id=\"qq9ajq\" data-start=\"3099\" data-end=\"3132\">4. Efficacit\u00e9 \u00e9lev\u00e9e de la production<\/h3>\n<p data-start=\"3133\" data-end=\"3310\">L'Ai80HC offre un d\u00e9bit de plus de 1,5 fois sup\u00e9rieur \u00e0 celui des syst\u00e8mes conventionnels, ce qui le rend adapt\u00e9 aux environnements de fabrication de semi-conducteurs \u00e0 haut volume.<\/p>\n<h3 data-section-id=\"1h2ge5m\" data-start=\"3317\" data-end=\"3357\">5. Fonctionnement des implants \u00e0 mod\u00e8le avanc\u00e9<\/h3>\n<p data-start=\"3358\" data-end=\"3429\">Permet l'implantation d'ions par motifs, ce qui permet de distribuer la dose dans :<\/p>\n<ul data-start=\"3430\" data-end=\"3488\">\n<li data-section-id=\"fqh2r6\" data-start=\"3430\" data-end=\"3450\">R\u00e9gions circulaires<\/li>\n<li data-section-id=\"1aoby05\" data-start=\"3451\" data-end=\"3488\">Segmentation des plaques de silicium par quadrant<\/li>\n<\/ul>\n<p data-start=\"3490\" data-end=\"3502\">Cela permet :<\/p>\n<ul data-start=\"3503\" data-end=\"3617\">\n<li data-section-id=\"chxy3y\" data-start=\"3503\" data-end=\"3552\">Conditions de traitement multiples sur une seule tranche de silicium<\/li>\n<li data-section-id=\"z1xkzj\" data-start=\"3553\" data-end=\"3589\">R\u00e9duction des co\u00fbts de d\u00e9veloppement des proc\u00e9d\u00e9s<\/li>\n<li data-section-id=\"15uh0gh\" data-start=\"3590\" data-end=\"3617\">Am\u00e9lioration de l'efficacit\u00e9 de la R&amp;D<\/li>\n<\/ul>\n<p data-start=\"3619\" data-end=\"3780\">Exemple : Une seule plaquette peut recevoir simultan\u00e9ment quatre conditions d'implantation diff\u00e9rentes dans quatre quadrants, ce qui acc\u00e9l\u00e8re consid\u00e9rablement l'optimisation du processus.<\/p>\n<h2 data-section-id=\"18zz1hm\" data-start=\"3787\" data-end=\"3810\">Application<\/h2>\n<ul data-start=\"3812\" data-end=\"4005\">\n<li data-section-id=\"16inq9u\" data-start=\"3812\" data-end=\"3839\">Fabrication de dispositifs CMOS<\/li>\n<li data-section-id=\"xjegvm\" data-start=\"3840\" data-end=\"3875\">Fabrication de circuits int\u00e9gr\u00e9s logiques avanc\u00e9s<\/li>\n<li data-section-id=\"1xlm3tz\" data-start=\"3876\" data-end=\"3906\">Dopage des semi-conducteurs de puissance<\/li>\n<li data-section-id=\"1ursyu4\" data-start=\"3907\" data-end=\"3959\">Lignes pilotes pour la recherche et le d\u00e9veloppement de semi-conducteurs<\/li>\n<li data-section-id=\"1k6v1m6\" data-start=\"3960\" data-end=\"4005\">Production de circuits int\u00e9gr\u00e9s \u00e0 base de silicium<\/li>\n<\/ul>\n<h2 data-section-id=\"1idaiwr\" data-start=\"58\" data-end=\"95\">Foire aux questions (FAQ)<\/h2>\n<h3 data-section-id=\"squ7m7\" data-start=\"97\" data-end=\"166\">1. Pour quelle taille de plaquette le syst\u00e8me Ai80HC (High Beam) est-il con\u00e7u ?<\/h3>\n<p data-start=\"167\" data-end=\"381\">Le syst\u00e8me d'implantation ionique Ai80HC (High Beam) est con\u00e7u pour les lignes de production de plaquettes de silicium de 12 pouces, ce qui le rend adapt\u00e9 \u00e0 la fabrication de semi-conducteurs avanc\u00e9s et \u00e0 la fabrication de circuits int\u00e9gr\u00e9s en grand volume.<\/p>\n<h3 data-section-id=\"foelcb\" data-start=\"388\" data-end=\"458\">2. Quelle est la gamme d'\u00e9nergie et la capacit\u00e9 de traitement de ce syst\u00e8me ?<\/h3>\n<p data-start=\"459\" data-end=\"716\">Le syst\u00e8me fonctionne dans une gamme d'\u00e9nergie allant de 0,5 keV \u00e0 80 keV, permettant une implantation \u00e0 la fois peu profonde et moyennement profonde. Il est compatible avec les processus LSI, y compris la formation de jonctions peu profondes et l'ing\u00e9nierie source\/drain dans les structures de dispositifs avanc\u00e9s.<\/p>\n<h3 data-section-id=\"jluc3f\" data-start=\"723\" data-end=\"792\">3. Quel est le niveau de pr\u00e9cision et de stabilit\u00e9 du syst\u00e8me ?<\/h3>\n<p data-start=\"793\" data-end=\"850\">L'Ai80HC (High Beam) assure une grande coh\u00e9rence du processus avec :<\/p>\n<ul data-start=\"851\" data-end=\"965\">\n<li data-section-id=\"8ldlzj\" data-start=\"851\" data-end=\"878\">Pr\u00e9cision de l'angle \u2264 0,1\u00b0<\/li>\n<li data-section-id=\"nyztaj\" data-start=\"879\" data-end=\"905\">Uniformit\u00e9 (1\u03c3) \u2264 1%<\/li>\n<li data-section-id=\"ai4v3y\" data-start=\"906\" data-end=\"935\">R\u00e9p\u00e9tabilit\u00e9 (1\u03c3) \u2264 1%<\/li>\n<li data-section-id=\"1hjdqzq\" data-start=\"936\" data-end=\"965\">Parall\u00e9lisme de la poutre \u2264 0,3\u00b0.<\/li>\n<\/ul>\n<p data-start=\"967\" data-end=\"1069\">Ces sp\u00e9cifications garantissent des performances stables de wafer \u00e0 wafer et une production de semi-conducteurs \u00e0 haut rendement.<\/p>","protected":false},"excerpt":{"rendered":"<p>Le syst\u00e8me d'implantation ionique de la s\u00e9rie Ai80HC (High Beam) est un implanteur ionique \u00e0 courant \u00e9lev\u00e9 sp\u00e9cialement con\u00e7u pour les lignes de production de semi-conducteurs sur plaquettes de silicium de 12 pouces. Il est con\u00e7u pour les processus de dopage de pr\u00e9cision avanc\u00e9s dans la fabrication moderne de circuits int\u00e9gr\u00e9s, offrant des performances de faisceau stables, une r\u00e9p\u00e9tabilit\u00e9 \u00e9lev\u00e9e du processus et une excellente pr\u00e9cision de contr\u00f4le de la dose.<\/p>","protected":false},"featured_media":2343,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}}},"product_brand":[],"product_cat":[1177],"product_tag":[1160,1183,1179,1182,1178,1181,1180,1185,1184,890],"class_list":{"0":"post-2342","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-ion-implantation-equipment","7":"product_tag-12-inch-wafer-equipment","8":"product_tag-cmos-process-equipment","9":"product_tag-high-current-ion-implanter","10":"product_tag-ion-implantation-machine","11":"product_tag-ion-implantation-system","12":"product_tag-lsi-manufacturing-equipment","13":"product_tag-semiconductor-doping-equipment","14":"product_tag-semiconductor-fabrication-equipment","15":"product_tag-shallow-junction-implantation","16":"product_tag-silicon-wafer-processing","17":"desktop-align-left","18":"tablet-align-left","19":"mobile-align-left","20":"ast-product-gallery-layout-horizontal-slider","21":"ast-product-gallery-with-no-image","22":"ast-product-tabs-layout-horizontal","24":"first","25":"instock","26":"shipping-taxable","27":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/product\/2342","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/comments?post=2342"}],"version-history":[{"count":4,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/product\/2342\/revisions"}],"predecessor-version":[{"id":2376,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/product\/2342\/revisions\/2376"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/media\/2343"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/media?parent=2342"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/product_brand?post=2342"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/product_cat?post=2342"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/product_tag?post=2342"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}