{"id":2316,"date":"2026-04-21T06:05:44","date_gmt":"2026-04-21T06:05:44","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2316"},"modified":"2026-04-21T06:05:45","modified_gmt":"2026-04-21T06:05:45","slug":"ion-beam-etching-machine-for-si-sio2-and-metal-materials-in-semiconductor-fabrication","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/fr\/product\/ion-beam-etching-machine-for-si-sio2-and-metal-materials-in-semiconductor-fabrication\/","title":{"rendered":"Machine de gravure par faisceau d'ions pour Si SiO2 et les mat\u00e9riaux m\u00e9talliques dans la fabrication de semi-conducteurs"},"content":{"rendered":"<p data-start=\"297\" data-end=\"643\"><img fetchpriority=\"high\" decoding=\"async\" class=\"size-medium wp-image-2320 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-300x300.webp\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-300x300.webp 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-150x150.webp 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-12x12.webp 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-600x600.webp 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-100x100.webp 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication.webp 750w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>La machine de gravure par faisceau d'ions pour Si, SiO2 et les mat\u00e9riaux m\u00e9talliques est un syst\u00e8me de gravure \u00e0 sec de haute pr\u00e9cision con\u00e7u pour les applications avanc\u00e9es de microfabrication et de nanotechnologie. Utilisant la gravure par faisceau d'ions (IBE), \u00e9galement connue sous le nom de fraisage ionique, cet \u00e9quipement permet un enl\u00e8vement de mati\u00e8re important gr\u00e2ce \u00e0 un processus de pulv\u00e9risation purement physique.<\/p>\n<p data-start=\"645\" data-end=\"961\">Contrairement aux technologies conventionnelles de gravure par plasma, la gravure par faisceau d'ions n'expose pas directement le substrat au plasma. Cela r\u00e9duit consid\u00e9rablement les risques de dommages, de contamination et d'accumulation de charges induits par le plasma, ce qui la rend particuli\u00e8rement adapt\u00e9e \u00e0 la fabrication de semi-conducteurs et d'appareils optiques sensibles.<\/p>\n<p data-start=\"963\" data-end=\"1148\">Avec une pr\u00e9cision de l'ordre du nanom\u00e8tre et une excellente contr\u00f4labilit\u00e9 des processus, ce syst\u00e8me est largement utilis\u00e9 dans la fabrication des semi-conducteurs, le traitement des couches minces et la recherche sur les mat\u00e9riaux avanc\u00e9s.<\/p>\n<hr data-start=\"1150\" data-end=\"1153\" \/>\n<h2 data-section-id=\"17sw59i\" data-start=\"1155\" data-end=\"1184\"><span role=\"text\"><img decoding=\"async\" class=\"wp-image-2324 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-300x125.png\" alt=\"\" width=\"458\" height=\"191\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-300x125.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-18x7.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-600x250.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7.png 680w\" sizes=\"(max-width: 458px) 100vw, 458px\" \/>Principales caract\u00e9ristiques techniques<\/span><\/h2>\n<ul data-start=\"1186\" data-end=\"1929\">\n<li data-section-id=\"7yo1gz\" data-start=\"1186\" data-end=\"1324\">Ultra haute pr\u00e9cision<br data-start=\"1212\" data-end=\"1215\" \/>Atteint une r\u00e9solution de gravure de \u226410 nm, r\u00e9pondant aux exigences des semi-conducteurs avanc\u00e9s et de la nanofabrication.<\/li>\n<li data-section-id=\"csgjgf\" data-start=\"1326\" data-end=\"1497\">Capacit\u00e9 de gravure non s\u00e9lective<br data-start=\"1364\" data-end=\"1367\" \/>Permet une gravure uniforme sur de nombreux mat\u00e9riaux, y compris les m\u00e9taux, les semi-conducteurs et les di\u00e9lectriques, sans d\u00e9pendance chimique.<\/li>\n<li data-section-id=\"1xlwjqh\" data-start=\"1499\" data-end=\"1667\">Contr\u00f4le anisotrope et directionnel<br data-start=\"1540\" data-end=\"1543\" \/>Les angles r\u00e9glables du faisceau d'ions permettent d'obtenir des profils de gravure \u00e0 la fois anisotropes et isotropes, ce qui favorise le transfert de motifs complexes.<\/li>\n<li data-section-id=\"1ialgp0\" data-start=\"1669\" data-end=\"1793\">Environnement de traitement sans plasma<br data-start=\"1709\" data-end=\"1712\" \/>\u00c9limine les dommages induits par le plasma, ce qui garantit une plus grande fiabilit\u00e9 et un meilleur rendement des appareils.<\/li>\n<li data-section-id=\"1squn5z\" data-start=\"1795\" data-end=\"1929\">Excellente qualit\u00e9 de surface<br data-start=\"1826\" data-end=\"1829\" \/>Produit des surfaces lisses avec une rugosit\u00e9 r\u00e9duite, ce qui est essentiel pour les applications optiques et \u00e9lectroniques.<\/li>\n<\/ul>\n<hr data-start=\"1931\" data-end=\"1934\" \/>\n<h2 data-section-id=\"crb813\" data-start=\"1936\" data-end=\"1965\"><span role=\"text\">Composants du syst\u00e8me central<\/span><\/h2>\n<p data-start=\"1967\" data-end=\"2042\">Un syst\u00e8me complet de gravure par faisceau d'ions se compose de plusieurs sous-syst\u00e8mes essentiels :<\/p>\n<h3 data-section-id=\"j86wbp\" data-start=\"2044\" data-end=\"2068\"><span role=\"text\">1. Syst\u00e8me de vide<\/span><\/h3>\n<p data-start=\"2069\" data-end=\"2118\">Fournit un environnement \u00e0 vide pouss\u00e9 essentiel pour :<\/p>\n<ul data-start=\"2119\" data-end=\"2193\">\n<li data-section-id=\"1vzt3vq\" data-start=\"2119\" data-end=\"2137\">Stabilit\u00e9 de la poutre<\/li>\n<li data-section-id=\"svkbf3\" data-start=\"2138\" data-end=\"2163\">Contr\u00f4le de la contamination<\/li>\n<li data-section-id=\"19d0yza\" data-start=\"2164\" data-end=\"2193\">Traitement de haute pr\u00e9cision<\/li>\n<\/ul>\n<h3 data-section-id=\"8jigvj\" data-start=\"2195\" data-end=\"2216\"><span role=\"text\">2. Source d'ions<\/span><\/h3>\n<p data-start=\"2217\" data-end=\"2272\">G\u00e9n\u00e8re un faisceau d'ions \u00e0 haute \u00e9nergie (g\u00e9n\u00e9ralement des ions argon) :<\/p>\n<ul data-start=\"2273\" data-end=\"2386\">\n<li data-section-id=\"116c4dh\" data-start=\"2273\" data-end=\"2315\">D\u00e9termine la vitesse et l'uniformit\u00e9 de la gravure<\/li>\n<li data-section-id=\"bdpzju\" data-start=\"2316\" data-end=\"2386\">Prise en charge de diff\u00e9rents types de sources, telles que les sources RF et les sources d'ions Kaufman<\/li>\n<\/ul>\n<h3 data-section-id=\"1tpsqxl\" data-start=\"2388\" data-end=\"2411\"><span role=\"text\">3. \u00c9tape de l'\u00e9chantillon<\/span><\/h3>\n<ul data-start=\"2412\" data-end=\"2530\">\n<li data-section-id=\"d3z3he\" data-start=\"2412\" data-end=\"2468\">Rotation multiaxiale pour une gravure uniforme<\/li>\n<li data-section-id=\"15yipgz\" data-start=\"2469\" data-end=\"2530\">Le contr\u00f4le int\u00e9gr\u00e9 de la temp\u00e9rature am\u00e9liore la stabilit\u00e9 du processus<\/li>\n<\/ul>\n<h3 data-section-id=\"qoosxq\" data-start=\"2532\" data-end=\"2557\"><span role=\"text\">4. Syst\u00e8me de contr\u00f4le<\/span><\/h3>\n<ul data-start=\"2558\" data-end=\"2705\">\n<li data-section-id=\"1mqnqw1\" data-start=\"2558\" data-end=\"2587\">Fonctionnement enti\u00e8rement automatis\u00e9<\/li>\n<li data-section-id=\"ymbyxd\" data-start=\"2588\" data-end=\"2643\">Permet un contr\u00f4le pr\u00e9cis des param\u00e8tres et de la r\u00e9p\u00e9tabilit\u00e9<\/li>\n<li data-section-id=\"1kjf28e\" data-start=\"2644\" data-end=\"2705\">D\u00e9tection de point final en option pour un contr\u00f4le avanc\u00e9 du processus<\/li>\n<\/ul>\n<h3 data-section-id=\"97rafg\" data-start=\"2707\" data-end=\"2729\"><span role=\"text\">5. Neutralisateur<\/span><\/h3>\n<ul data-start=\"2730\" data-end=\"2836\">\n<li data-section-id=\"12j0ebp\" data-start=\"2730\" data-end=\"2772\">Emp\u00eache l'accumulation de charges pendant la gravure<\/li>\n<li data-section-id=\"1o4nvb1\" data-start=\"2773\" data-end=\"2836\">Essentiel pour les mat\u00e9riaux isolants tels que SiO\u2082 et Si\u2083N\u2084.<\/li>\n<\/ul>\n<hr data-start=\"2838\" data-end=\"2841\" \/>\n<h2 data-section-id=\"sgqumq\" data-start=\"2843\" data-end=\"2867\"><span role=\"text\">Principe de fonctionnement<\/span><\/h2>\n<p data-start=\"2869\" data-end=\"3006\"><img decoding=\"async\" class=\"size-medium wp-image-2321 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-300x235.png\" alt=\"\" width=\"300\" height=\"235\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-300x235.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-15x12.png 15w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-600x469.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1.png 680w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>La gravure par faisceau d'ions consiste \u00e0 diriger un faisceau d'ions collimat\u00e9 \u00e0 haute \u00e9nergie vers la surface du mat\u00e9riau cible dans des conditions de vide.<\/p>\n<p data-start=\"3008\" data-end=\"3253\">Les ions (g\u00e9n\u00e9ralement Ar\u207a) entrent en collision avec les atomes de la surface, ce qui transf\u00e8re la quantit\u00e9 de mouvement et provoque l'\u00e9jection des atomes par pulv\u00e9risation physique. Ce processus enl\u00e8ve le mat\u00e9riau couche par couche, ce qui permet une d\u00e9finition pr\u00e9cise du motif sans r\u00e9action chimique.<\/p>\n<p data-start=\"3255\" data-end=\"3296\">L'IBE est donc particuli\u00e8rement adapt\u00e9 pour :<\/p>\n<ul data-start=\"3297\" data-end=\"3403\">\n<li data-section-id=\"jy9ydi\" data-start=\"3297\" data-end=\"3333\">Transfert de motifs \u00e0 haute r\u00e9solution<\/li>\n<li data-section-id=\"1ihgsm0\" data-start=\"3334\" data-end=\"3376\">Mat\u00e9riaux \u00e0 faible r\u00e9activit\u00e9 chimique<\/li>\n<li data-section-id=\"hl3mzt\" data-start=\"3377\" data-end=\"3403\">Structures multicouches<\/li>\n<\/ul>\n<hr data-start=\"3405\" data-end=\"3408\" \/>\n<h2 data-section-id=\"gimyd4\" data-start=\"3410\" data-end=\"3440\"><span role=\"text\">Capacit\u00e9s de traitement<\/span><\/h2>\n<h3 data-section-id=\"ww5vbk\" data-start=\"3442\" data-end=\"3469\"><span role=\"text\">Mat\u00e9riels pris en charge<\/span><\/h3>\n<ul data-start=\"3470\" data-end=\"3622\">\n<li data-section-id=\"4dwycu\" data-start=\"3470\" data-end=\"3504\">M\u00e9taux : Au, Pt, Cu, Ta, Al<\/li>\n<li data-section-id=\"12wc4i0\" data-start=\"3505\" data-end=\"3537\">Semi-conducteurs : Si, GaAs<\/li>\n<li data-section-id=\"75kyg7\" data-start=\"3538\" data-end=\"3570\">Di\u00e9lectriques : SiO\u2082, Si\u2083N\u2084<\/li>\n<li data-section-id=\"1xmdv1x\" data-start=\"3571\" data-end=\"3622\">Mat\u00e9riaux avanc\u00e9s : AlN, c\u00e9ramiques, polym\u00e8res<\/li>\n<\/ul>\n<hr data-start=\"3624\" data-end=\"3627\" \/>\n<h2 data-section-id=\"12vl3dy\" data-start=\"3629\" data-end=\"3656\"><span role=\"text\">Flux de processus typique<\/span><\/h2>\n<ol data-start=\"3658\" data-end=\"4078\">\n<li data-section-id=\"1lq2akh\" data-start=\"3658\" data-end=\"3742\">Pr\u00e9paration de l'\u00e9chantillon<br data-start=\"3683\" data-end=\"3686\" \/>Nettoyer et monter le substrat dans la chambre \u00e0 vide<\/li>\n<li data-section-id=\"1uf7qj1\" data-start=\"3744\" data-end=\"3821\">Masquage<br data-start=\"3758\" data-end=\"3761\" \/>Application d'une r\u00e9sine photosensible ou d'un masque m\u00e9tallique pour d\u00e9finir les zones de gravure<\/li>\n<li data-section-id=\"1sq3ygn\" data-start=\"3823\" data-end=\"3910\">G\u00e9n\u00e9ration de faisceaux d'ions<br data-start=\"3849\" data-end=\"3852\" \/>Activer la source d'ions \u00e0 l'aide d'un gaz inerte (g\u00e9n\u00e9ralement de l'argon).<\/li>\n<li data-section-id=\"46esbg\" data-start=\"3912\" data-end=\"4006\">Proc\u00e9d\u00e9 de gravure<br data-start=\"3934\" data-end=\"3937\" \/>Ajuster l'\u00e9nergie, l'angle et la dur\u00e9e du faisceau pour obtenir la structure souhait\u00e9e<\/li>\n<li data-section-id=\"oeifr6\" data-start=\"4008\" data-end=\"4078\">Enl\u00e8vement du masque<br data-start=\"4027\" data-end=\"4030\" \/>Retirer le masque pour r\u00e9v\u00e9ler les motifs grav\u00e9s d\u00e9finitifs<\/li>\n<\/ol>\n<hr data-start=\"4080\" data-end=\"4083\" \/>\n<h2 data-section-id=\"1myoacb\" data-start=\"4085\" data-end=\"4109\"><span role=\"text\">Domaines d'application<\/span><\/h2>\n<h3 data-section-id=\"bm5nu5\" data-start=\"4111\" data-end=\"4146\"><span role=\"text\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-2322 aligncenter\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-300x65.png\" alt=\"\" width=\"724\" height=\"157\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-300x65.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-18x4.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-600x130.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6.png 680w\" sizes=\"(max-width: 724px) 100vw, 724px\" \/>Fabrication de semi-conducteurs<\/span><\/h3>\n<ul data-start=\"4147\" data-end=\"4236\">\n<li data-section-id=\"13vctk4\" data-start=\"4147\" data-end=\"4180\">Mise en forme de circuits int\u00e9gr\u00e9s<\/li>\n<li data-section-id=\"ofwy8d\" data-start=\"4181\" data-end=\"4206\">Structuration de films minces<\/li>\n<li data-section-id=\"1x3kzva\" data-start=\"4207\" data-end=\"4236\">Fabrication de n\u0153uds avanc\u00e9s<\/li>\n<\/ul>\n<h3 data-section-id=\"1tse075\" data-start=\"4238\" data-end=\"4261\"><span role=\"text\">Dispositifs optiques<\/span><\/h3>\n<ul data-start=\"4262\" data-end=\"4356\">\n<li data-section-id=\"v6a7ly\" data-start=\"4262\" data-end=\"4309\">Traitement de pr\u00e9cision des r\u00e9seaux et des lentilles<\/li>\n<li data-section-id=\"lq2w9m\" data-start=\"4310\" data-end=\"4356\">Modification de la surface des composants optiques<\/li>\n<\/ul>\n<h3 data-section-id=\"1wc0my6\" data-start=\"4358\" data-end=\"4380\"><span role=\"text\">Nanotechnologie<\/span><\/h3>\n<ul data-start=\"4381\" data-end=\"4441\">\n<li data-section-id=\"178ey7v\" data-start=\"4381\" data-end=\"4441\">Fabrication de nanofils, de nanopores et de structures MEMS<\/li>\n<\/ul>\n<h3 data-section-id=\"krs816\" data-start=\"4443\" data-end=\"4468\"><span role=\"text\">Science des mat\u00e9riaux<\/span><\/h3>\n<ul data-start=\"4469\" data-end=\"4541\">\n<li data-section-id=\"18ntl16\" data-start=\"4469\" data-end=\"4506\">Analyse et modification des surfaces<\/li>\n<li data-section-id=\"1b8wqpz\" data-start=\"4507\" data-end=\"4541\">Pr\u00e9paration du rev\u00eatement fonctionnel<\/li>\n<\/ul>\n<hr data-start=\"4543\" data-end=\"4546\" \/>\n<h2 data-section-id=\"13lz0w7\" data-start=\"4548\" data-end=\"4591\"><span role=\"text\">Avantages par rapport \u00e0 la gravure conventionnelle<\/span><\/h2>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"4593\" data-end=\"4927\">\n<thead data-start=\"4593\" data-end=\"4646\">\n<tr data-start=\"4593\" data-end=\"4646\">\n<th class=\"\" data-start=\"4593\" data-end=\"4603\" data-col-size=\"sm\">Fonctionnalit\u00e9<\/th>\n<th class=\"\" data-start=\"4603\" data-end=\"4622\" data-col-size=\"sm\">Gravure par faisceau d'ions<\/th>\n<th class=\"\" data-start=\"4622\" data-end=\"4646\" data-col-size=\"sm\">Gravure ionique r\u00e9active<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"4697\" data-end=\"4927\">\n<tr data-start=\"4697\" data-end=\"4746\">\n<td data-start=\"4697\" data-end=\"4712\" data-col-size=\"sm\">Type de processus<\/td>\n<td data-start=\"4712\" data-end=\"4723\" data-col-size=\"sm\">Physique<\/td>\n<td data-start=\"4723\" data-end=\"4746\" data-col-size=\"sm\">Physique + chimique<\/td>\n<\/tr>\n<tr data-start=\"4747\" data-end=\"4805\">\n<td data-start=\"4747\" data-end=\"4765\" data-col-size=\"sm\">Exposition du plasma<\/td>\n<td data-start=\"4765\" data-end=\"4786\" data-col-size=\"sm\">Pas d'exposition directe<\/td>\n<td data-start=\"4786\" data-end=\"4805\" data-col-size=\"sm\">Exposition directe<\/td>\n<\/tr>\n<tr data-start=\"4806\" data-end=\"4853\">\n<td data-start=\"4806\" data-end=\"4829\" data-col-size=\"sm\">S\u00e9lectivit\u00e9 des mat\u00e9riaux<\/td>\n<td data-start=\"4829\" data-end=\"4845\" data-col-size=\"sm\">Faible (uniforme)<\/td>\n<td data-start=\"4845\" data-end=\"4853\" data-col-size=\"sm\">Haut<\/td>\n<\/tr>\n<tr data-start=\"4854\" data-end=\"4893\">\n<td data-start=\"4854\" data-end=\"4871\" data-col-size=\"sm\">Dommages de surface<\/td>\n<td data-start=\"4871\" data-end=\"4881\" data-col-size=\"sm\">Minime<\/td>\n<td data-start=\"4881\" data-end=\"4893\" data-col-size=\"sm\">Possible<\/td>\n<\/tr>\n<tr data-start=\"4894\" data-end=\"4927\">\n<td data-start=\"4894\" data-end=\"4906\" data-col-size=\"sm\">Pr\u00e9cision<\/td>\n<td data-start=\"4906\" data-end=\"4919\" data-col-size=\"sm\">Ultra-haut<\/td>\n<td data-start=\"4919\" data-end=\"4927\" data-col-size=\"sm\">Haut<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<hr data-start=\"4929\" data-end=\"4932\" \/>\n<h2 data-section-id=\"elc90z\" data-start=\"4934\" data-end=\"4944\"><span role=\"text\">FAQ<\/span><\/h2>\n<h3 data-section-id=\"1h3z74f\" data-start=\"4946\" data-end=\"4978\"><span role=\"text\">Qu'est-ce que la gravure par faisceau d'ions\uff1f ?<\/span><\/h3>\n<p data-start=\"4979\" data-end=\"5122\">La gravure par faisceau d'ions est un processus de gravure \u00e0 sec qui \u00e9limine le mat\u00e9riau par pulv\u00e9risation physique \u00e0 l'aide d'ions \u00e0 haute \u00e9nergie dans un environnement sous vide.<\/p>\n<h3 data-section-id=\"1oyreis\" data-start=\"5124\" data-end=\"5153\"><span role=\"text\">Diff\u00e9rence IBE vs RIE\uff1f<\/span><\/h3>\n<ul data-start=\"5154\" data-end=\"5316\">\n<li data-section-id=\"6o7nxe\" data-start=\"5154\" data-end=\"5219\">IBE : purement physique, pas de contact avec le plasma, plus grande pr\u00e9cision<\/li>\n<li data-section-id=\"d79ynl\" data-start=\"5220\" data-end=\"5316\">RIE : combine des r\u00e9actions chimiques avec le plasma, une plus grande s\u00e9lectivit\u00e9 mais plus de risques de dommages.<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>La machine de gravure par faisceau d'ions pour Si, SiO2 et les mat\u00e9riaux m\u00e9talliques est un syst\u00e8me de gravure \u00e0 sec de haute pr\u00e9cision con\u00e7u pour les applications avanc\u00e9es de microfabrication et de nanotechnologie. Utilisant la gravure par faisceau d'ions (IBE), \u00e9galement connue sous le nom de fraisage ionique, cet \u00e9quipement permet un enl\u00e8vement de mati\u00e8re important gr\u00e2ce \u00e0 un processus de pulv\u00e9risation purement physique.<\/p>","protected":false},"featured_media":2320,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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