\n| Densit\u00e9 de d\u00e9fauts mortels<\/td>\n | \u22640,2 cm-\u00b2 (optimis\u00e9 \u00e0 0,01 cm-\u00b2)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\nSc\u00e9narios d'application<\/h3>\nL'\u00e9quipement d'\u00e9pitaxie SiC \u00e0 flux d'air vertical de type split est largement utilis\u00e9 dans la fabrication de semi-conducteurs SiC \u00e0 haute performance, en particulier dans les industries exigeant un rendement \u00e9lev\u00e9, une tension \u00e9lev\u00e9e et des performances thermiques \u00e9lev\u00e9es :<\/p>\n V\u00e9hicules \u00e9lectriques (VE)<\/strong>
Utilis\u00e9 dans la production de MOSFET SiC et de modules de puissance pour les onduleurs, les chargeurs embarqu\u00e9s et les convertisseurs DC-DC, am\u00e9liorant l'efficacit\u00e9 \u00e9nerg\u00e9tique et l'autonomie.<\/p>\nSyst\u00e8mes d'\u00e9nergie renouvelable<\/strong>
Appliqu\u00e9 dans les onduleurs photovolta\u00efques et les syst\u00e8mes de stockage d'\u00e9nergie, il permet d'am\u00e9liorer l'efficacit\u00e9 et la fiabilit\u00e9 de la conversion.<\/p>\n\u00c9lectronique de puissance industrielle<\/strong>
Convient aux entra\u00eenements de moteurs de forte puissance, aux syst\u00e8mes d'automatisation industrielle et aux unit\u00e9s d'alimentation \u00e9lectrique n\u00e9cessitant un fonctionnement stable et efficace.<\/p>\nTransport ferroviaire et r\u00e9seaux \u00e9lectriques<\/strong>
Prend en charge les appareils haute tension et haute fr\u00e9quence utilis\u00e9s dans les r\u00e9seaux intelligents, les syst\u00e8mes de traction et les infrastructures de transmission d'\u00e9nergie.<\/p>\nAppareils de puissance haut de gamme<\/strong>
Id\u00e9al pour la fabrication de dispositifs SiC avanc\u00e9s tels que les diodes Schottky, les MOSFET et les composants haute tension de la prochaine g\u00e9n\u00e9ration.<\/p>\n![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application-1024x578.png\") <\/p>\n
FAQ<\/h3>\n1. Quelles tailles de plaquettes sont prises en charge par cet \u00e9quipement d'\u00e9pitaxie de type split ?<\/strong>
Le syst\u00e8me prend en charge les plaquettes SiC de 6 et 8 pouces, ce qui permet aux fabricants de r\u00e9pondre aux demandes de production actuelles tout en se pr\u00e9parant \u00e0 l'\u00e9volution future.<\/p>\n2. Quels sont les avantages de la conception en deux parties ?<\/strong>
La conception modulaire permet l'installation ind\u00e9pendante des modules d'alimentation, d'\u00e9chappement et EFEM, ce qui am\u00e9liore la flexibilit\u00e9 de l'agencement de l'usine et la facilit\u00e9 d'entretien.<\/p>\n3. Comment la conception du flux d'air vertical am\u00e9liore-t-elle la qualit\u00e9 de l'\u00e9pitaxie ?<\/strong>
Le flux d'air vertical assure une distribution uniforme du gaz sur la tranche, ce qui permet d'obtenir une \u00e9paisseur constante, un dopage stable et une densit\u00e9 de d\u00e9fauts r\u00e9duite.<\/p>\n4. Cet \u00e9quipement est-il adapt\u00e9 \u00e0 la fabrication en grande s\u00e9rie ?<\/strong><\/p>\nOui, la configuration \u00e0 double chambre permet un fonctionnement continu sur plusieurs fours, avec un d\u00e9bit sup\u00e9rieur \u00e0 1 100 plaquettes par mois, ce qui en fait la solution id\u00e9ale pour la production \u00e0 grande \u00e9chelle et garantit des plaquettes de haute qualit\u00e9 constante avec des temps d'arr\u00eat op\u00e9rationnels r\u00e9duits.<\/p>","protected":false},"excerpt":{"rendered":" L'\u00e9quipement d'\u00e9pitaxie de carbure de silicium (SiC) \u00e0 flux d'air vertical de type divis\u00e9 est un syst\u00e8me de croissance \u00e9pitaxiale avanc\u00e9 con\u00e7u pour la production \u00e0 haut rendement de plaques \u00e9pitaxi\u00e9es de SiC de 6 et 8 pouces. Dot\u00e9 d'une architecture modulaire de type split, l'alimentation \u00e9lectrique, les modules d'\u00e9chappement et les modules EFEM\/PM\/TM peuvent \u00eatre install\u00e9s ind\u00e9pendamment dans les zones grises ou les mezzanines.<\/p>","protected":false},"featured_media":2087,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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|
![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Split-Type-Vertical-Airflow-SiC-Epitaxy-Equipment-for-68-Epi-Wafers-2-300x300.png\")
L'\u00e9quipement d'\u00e9pitaxie de carbure de silicium (SiC) \u00e0 flux d'air vertical de type divis\u00e9 est un syst\u00e8me de croissance \u00e9pitaxiale avanc\u00e9 con\u00e7u pour la production \u00e0 haut rendement de plaques \u00e9pitaxi\u00e9es de SiC de 6 et 8 pouces. Dot\u00e9 d'une architecture modulaire de type split, l'alimentation \u00e9lectrique, les modules d'\u00e9chappement et les modules EFEM\/PM\/TM peuvent \u00eatre install\u00e9s ind\u00e9pendamment dans les zones grises ou les mezzanines. Cette flexibilit\u00e9 permet une int\u00e9gration transparente dans les environnements de fabrication modernes tout en conservant une capacit\u00e9 d'automatisation compl\u00e8te gr\u00e2ce au module SMIF et \u00e0 la liaison avec les ponts roulants.<\/p>\n![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Split-Type-Vertical-Airflow-SiC-Epitaxy-Equipment-for-68-Epi-Wafers-3-1-300x300.png\")
Principaux avantages techniques<\/h3>\n