{"id":2021,"date":"2026-03-27T01:46:43","date_gmt":"2026-03-27T01:46:43","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2021"},"modified":"2026-03-27T01:46:45","modified_gmt":"2026-03-27T01:46:45","slug":"high-precision-wafer-bonding-equipment-for-si-si-sic-sic-heterogeneous-integration","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/fr\/product\/high-precision-wafer-bonding-equipment-for-si-si-sic-sic-heterogeneous-integration\/","title":{"rendered":"High-Precision Wafer Bonding Equipment for Si-Si, SiC-SiC & Heterogeneous Integration"},"content":{"rendered":"

The Wafer Bonding Equipment is a high-performance system engineered for advanced semiconductor packaging, MEMS fabrication, and third-generation semiconductor integration. It supports 2-inch to 12-inch wafers and enables room-temperature direct bonding and hydrophilic bonding, making it particularly suitable for Si-Si, SiC-SiC, and heterogeneous material bonding (Si-SiC, GaN, Sapphire, etc.).<\/p>\n

\"\"<\/p>\n

Designed for both R&D environments and mass production, the system integrates ultra-precision alignment, closed-loop pressure and temperature control, and ultra-high vacuum bonding conditions, ensuring high bonding strength, excellent interface uniformity, and low defect density.<\/p>\n

Caract\u00e9ristiques principales<\/span><\/h1>\n

\"\"1. Advanced Room-Temperature Bonding Technology<\/span><\/h3>\n
    \n
  • Eliminates thermal stress and wafer warpage<\/li>\n
  • Enables bonding of temperature-sensitive and dissimilar materials<\/li>\n
  • Supports hydrophilic bonding and plasma-activated bonding<\/li>\n<\/ul>\n

    2. Ultra-High Precision Alignment<\/span><\/h3>\n
      \n
    • Mark alignment accuracy: \u2264 \u00b12 \u03bcm<\/li>\n
    • Edge alignment accuracy: \u2264 \u00b150 \u03bcm<\/li>\n
    • Optional upgrade to submicron alignment system<\/li>\n<\/ul>\n

      3. High Bonding Strength & Interface Quality<\/span><\/h3>\n
        \n
      • \u2265 2.0 J\/m\u00b2 (Si-Si direct bonding at room temperature)<\/li>\n
      • Up to \u22655 J\/m\u00b2 with plasma surface activation<\/li>\n
      • Excellent interface cleanliness under UHV conditions<\/li>\n<\/ul>\n

        4. Wide Material Compatibility<\/span><\/h3>\n

        Supports bonding of:<\/p>\n

          \n
        • Semiconductors: Si, SiC, GaN, GaAs, InP<\/li>\n
        • Optical materials: Sapphire, Glass<\/li>\n
        • Functional materials: LiNbO\u2083, Diamond<\/li>\n<\/ul>\n

          5. Flexible Process Capability<\/span><\/h3>\n
            \n
          • Wafer size: 2″ \u2013 12″<\/li>\n
          • Compatible with irregular-shaped samples<\/li>\n
          • Optional modules: pre-heating \/ annealing (RT\u2013500\u00b0C)<\/li>\n<\/ul>\n

            Sp\u00e9cifications techniques<\/span><\/h1>\n
            \n
            \n\n\n\n\n\n\n\n\n\n\n\n\n
            Param\u00e8tres<\/th>\nSp\u00e9cifications<\/th>\n<\/tr>\n<\/thead>\n
            Bonding Methods<\/td>\nDirect Bonding \/ Plasma-Activated Bonding<\/td>\n<\/tr>\n
            Taille de la plaquette<\/td>\n2″ \u2013 12″<\/td>\n<\/tr>\n
            Gamme de pression<\/td>\n0 \u2013 10 MPa<\/td>\n<\/tr>\n
            Max Force<\/td>\n100 kN<\/td>\n<\/tr>\n
            Plage de temp\u00e9rature<\/td>\nRoom Temp \u2013 500\u00b0C (Optional)<\/td>\n<\/tr>\n
            Niveau de vide<\/td>\n\u2264 5 \u00d7 10\u207b\u2076 Torr<\/td>\n<\/tr>\n
            Alignment Accuracy<\/td>\n\u2264 \u00b12 \u03bcm (Mark), \u2264 \u00b150 \u03bcm (Edge)<\/td>\n<\/tr>\n
            Bonding Strength<\/td>\n\u2265 2.0 J\/m\u00b2 (RT Si-Si)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

            \"\"Syst\u00e8me de contr\u00f4le intelligent<\/span><\/h1>\n
              \n
            • Industrial-grade touchscreen HMI<\/li>\n
            • Supports 50+ process recipes storage<\/li>\n
            • Real-time pressure-temperature closed-loop control<\/li>\n
            • Stable and repeatable process performance<\/li>\n<\/ul>\n

              Safety & Reliability<\/span><\/h1>\n
                \n
              • Triple interlock protection (pressure \/ temperature \/ vacuum)<\/li>\n
              • Emergency stop system<\/li>\n
              • Designed for Class 100 cleanroom compatibility<\/li>\n<\/ul>\n

                Configurations optionnelles<\/span><\/h1>\n
                  \n
                • Robotic wafer handling system<\/li>\n
                • SECS\/GEM communication interface (fab integration ready)<\/li>\n
                • Inline inspection module<\/li>\n
                • Plasma surface activation unit<\/li>\n<\/ul>\n

                  Applications typiques<\/span><\/h1>\n

                  1. MEMS Packaging<\/span><\/h3>\n

                  Hermetic sealing for sensors such as accelerometers and gyroscopes<\/p>\n

                  2. 3D IC Integration<\/span><\/h3>\n

                  Wafer stacking for TSV and advanced packaging<\/p>\n

                  3. Compound Semiconductor Devices<\/span><\/h3>\n

                  GaN \/ SiC power device bonding and layer transfer<\/p>\n

                  4. CMOS Image Sensors (CIS)<\/span><\/h3>\n

                  Low-temperature bonding of CMOS wafers and optical substrates<\/p>\n

                  5. Biochips & Microfluidics<\/span><\/h3>\n

                  Reliable bonding for lab-on-chip devices<\/p>\n

                  Process Example<\/span><\/h1>\n

                  LiNbO\u2083 \u2013 SiC Wafer Bonding (Room Temperature)<\/p>\n

                    \n
                  • Achieves strong and uniform bonding interface<\/li>\n
                  • Verified by cross-sectional TEM imaging<\/li>\n
                  • Suitable for high-frequency and optoelectronic applications<\/li>\n<\/ul>\n

                    Q&A<\/span><\/h1>\n

                    Q1: Why choose room-temperature wafer bonding instead of thermal bonding?<\/span><\/h3>\n

                    Room-temperature bonding avoids thermal mismatch and stress, making it ideal for heterogeneous materials and improving yield in advanced packaging.<\/p>\n

                    Q2: What materials can be bonded?<\/span><\/h3>\n

                    The system supports a wide range of materials including:<\/p>\n

                      \n
                    • Semiconductors: Si, SiC, GaN<\/li>\n
                    • Oxides: SiO\u2082, LiNbO\u2083<\/li>\n
                    • Metals: Cu, Au<\/li>\n<\/ul>\n

                      Why Choose This System<\/span><\/h1>\n
                        \n
                      • Proven performance in SiC power device manufacturing<\/li>\n
                      • Verified bonding strength through lab testing and TEM analysis<\/li>\n
                      • Designed for both research institutes and industrial fabs<\/li>\n
                      • Modular architecture ensures long-term scalability and upgradeability<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

                        The Wafer Bonding Equipment is a high-performance system engineered for advanced semiconductor packaging, MEMS fabrication, and third-generation semiconductor integration.<\/p>","protected":false},"featured_media":2024,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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